CN104752409B - For carrying out the test structure of reliability testing to dielectric layer - Google Patents
For carrying out the test structure of reliability testing to dielectric layer Download PDFInfo
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- CN104752409B CN104752409B CN201310754228.5A CN201310754228A CN104752409B CN 104752409 B CN104752409 B CN 104752409B CN 201310754228 A CN201310754228 A CN 201310754228A CN 104752409 B CN104752409 B CN 104752409B
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- dielectric layer
- metal
- interconnecting wires
- metal interconnecting
- test structure
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- 238000012360 testing method Methods 0.000 title claims abstract description 74
- 239000002184 metal Substances 0.000 claims abstract description 139
- 229910052751 metal Inorganic materials 0.000 claims abstract description 139
- 239000000758 substrate Substances 0.000 claims abstract description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 125000001477 organic nitrogen group Chemical group 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A kind of test structure for being used to carry out dielectric layer reliability testing, dielectric layer is the dielectric layer in integrated circuit metal interconnection structure, integrated circuit metal interconnection structure includes the interconnection line and dual-damascene structure in dielectric layer, the dual-damascene structure has the connector electrically connected with an interconnection linear contact lay, the connector is above the dielectric layer between adjacent two interconnection line, test structure includes metal interconnection structure, and the metal interconnection structure of test structure includes：Substrate；Dielectric layer on substrate；A plurality of first metal interconnecting wires in dielectric layer；Dual-damascene structure in dielectric layer and above the first metal interconnecting wires, dual-damascene structure has the connector that electrical connection is contacted with the first metal interconnecting wires, and a part for connector is above the dielectric layer between adjacent two first metal interconnecting wires.Solve the problems, such as that the dielectric layer reliability in integrated circuit metal interconnection structure can not be tested out exactly according to existing test structure.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of survey for being used to carry out dielectric layer reliability testing
Structure is tried, the dielectric layer is the dielectric layer in integrated circuit metal interconnection structure.
Background technology
With the continuous diminution of integrated circuit dimensions, got in the metal interconnection structure of integrated circuit using dual-damascene structure
More to receive an acclaim.Because the dielectric layer in metal interconnection structure has a vital effect, thus need to be to the dielectric layer can
Tested by property.The traditional test methods of prior art are：Prepare a kind of test structure, the test structure, which has, includes double edges
The metal interconnection structure of embedding structure；Utilize the dielectric breakdown with time correlation（Time Dependent Dielectric
Breakdown, abbreviation TDDB）Or voltage breakdown（Voltage Breakdown, abbreviation Vbd）Method is measured in the test structure
The reliability of dielectric layer, the dielectric layer in integrated circuit metal interconnection structure can be obtained according to the test result of the test structure
Reliability.
But found in the application of the integrated circuit, the real medium layer of the integrated circuit metal interconnection structure is reliable
Property is often poorer than the dielectric layer reliability of measurement, in other words, integrated circuit can not be tested out exactly according to existing test structure
Dielectric layer reliability in metal interconnection structure.
The content of the invention
The problem to be solved in the present invention is：Integrated circuit metal interconnection can not be tested out exactly according to existing test structure
Dielectric layer reliability in structure.
To solve the above problems, the invention provides it is a kind of be used for dielectric layer carry out reliability testing test structure,
The dielectric layer is the dielectric layer in integrated circuit metal interconnection structure, and integrated circuit metal interconnection structure includes being located at dielectric layer
Interior interconnection line and dual-damascene structure, the dual-damascene structure have the connector electrically connected with an interconnection linear contact lay, and the connector is located at
Above dielectric layer between adjacent two interconnection line, the test structure includes metal interconnection structure, the metal of the test structure
Interconnection structure includes：
Substrate；
Dielectric layer on the substrate；
A plurality of first metal interconnecting wires in the dielectric layer；
Dual-damascene structure in the dielectric layer and above first metal interconnecting wires, the dual damascene knot
Structure has the connector that electrical connection is contacted with first metal interconnecting wires, and a part for the connector is located at adjacent two first gold medal
Belong to above the dielectric layer between interconnection line.
Optionally, the dual-damascene structure of the test structure also has：It is above the connector and with the connector
Second metal interconnecting wires of one.
Optionally, projection of second metal interconnecting wires on the substrate surface at least with first metal
Projection intersecting vertical of the interconnection line on the substrate surface.
Optionally, at least there are the metal interconnection structure of the test structure two to be interconnected in the first metal of comb teeth-shaped
Line, the comb portion of two first metal interconnecting wires are staggered.
Optionally, the metal interconnection structure of the test structure at least has three the first metal interconnecting wires, and respectively
First, two, three the first metal interconnecting wires, first and second first metal interconnecting wires are in comb teeth-shaped, the Article 3 first
Metal interconnecting wires have the first connecting line of multiple parallel intervals arrangement, in any three the first adjacent connecting lines, in being located at
Between two ends of the first connecting line of position be fixedly connected by the second connecting line with the first connecting line of both sides, described
First, the comb portion of two the first metal interconnecting wires is staggered with adjacent two first connecting line, and first first gold medal
The comb portion for belonging to the comb portion and the metal interconnecting wires of Article 2 first of interconnection line is staggered.
Optionally, the metal interconnection structure of the test structure has the metal of strip first of a plurality of parallel interval arrangement mutual
Line.
Optionally, dual-damascene structure is the dual-damascene structure formed using self-aligned via holes technique.
Optionally, the material of the dielectric layer is silica, silicon oxynitride or organic nitrogen oxides.
Compared with prior art, technical scheme has advantages below：
It is the same with the metal interconnection structure in integrated circuit, in the metal interconnection structure of test structure, a part for connector
It also is located above the dielectric layer between adjacent two first metal interconnecting wires, makes between connector and the first neighbouring metal interconnecting wires
Horizontal interval is smaller.Influenceed because test structure take into account connector in metal interconnection structure to caused by dielectric layer reliability,
Therefore the dielectric layer reliability in integrated circuit metal interconnection structure can be tested out exactly according to the test structure.
Brief description of the drawings
Fig. 1 is the cross-sectional view of metal interconnection structure in integrated circuit；
Fig. 2 is the vertical view for being used to carry out dielectric layer the test structure of reliability testing in the first embodiment of the present invention
Figure；
Fig. 3 is the cross-sectional view in the AA directions along Fig. 2；
Fig. 4 is the vertical view for being used to carry out dielectric layer the test structure of reliability testing in the second embodiment of the present invention
Figure；
Fig. 5 is the vertical view for being used to carry out dielectric layer the test structure of reliability testing in the third embodiment of the present invention
Figure；
Fig. 6 is the vertical view for being used to carry out dielectric layer the test structure of reliability testing in the fourth embodiment of the present invention
Figure.
Embodiment
Found through researching and analysing, integrated circuit metal can not be tested out exactly according to existing test structure by, which causing, mutually links
The reason for dielectric layer reliability in structure, is as follows：
As shown in figure 1, the metal interconnection structure of integrated circuit includes：Substrate 1；Dielectric layer 2 on substrate 1；It is located at
It is a plurality of in dielectric layer 2（Only illustrate two in figure）Spaced first metal interconnecting wires 3 and positioned at the first metal interconnecting wires
The dual-damascene structure of 3 tops, the dual-damascene structure have the connector 4 that electrical connection is contacted with one of them first metal interconnecting wires 3.
Connector 4 can be set must be more wider than contacting the first metal interconnecting wires 3 of electrical connection with the connector 4 so that flat
For row on the direction on the surface of substrate 1, the part of connector 4 can be on the dielectric layer 2 between adjacent two first metal interconnecting wires 3
Side, causes the horizontal interval G between connector 4 and the first neighbouring metal interconnecting wires 3 smaller, and then cause to be located in dielectric layer 2
The reliability of part 5 between connector 4 and the first neighbouring metal interconnecting wires 3 is poor, makes the reliability of whole dielectric layer 2 by shadow
Ring.
But in the metal interconnection structure of existing test structure, on the dielectric layer between adjacent two first metal interconnecting wires
The connector that Fang Bingwei is contacted electrical connection with one of them first metal interconnecting wires covers, and it is reliable to dielectric layer to have ignored the connector
Property caused by influence, in turn resulting in can not test out in integrated circuit metal interconnection structure exactly according to existing test structure
Dielectric layer reliability.
In consideration of it, the invention provides a kind of improved test structure, the metal interconnection structure of the test structure is the same as integrated
Metal interconnection structure in circuit is the same, and a part for connector also is located on the dielectric layer between adjacent two first metal interconnecting wires
Side, makes the horizontal interval between connector and the first neighbouring metal interconnecting wires smaller.It is slotting due to take into account in test structure
Plug influence to caused by dielectric layer reliability, therefore integrated circuit metal can be tested out exactly according to the test structure and mutually linked
Dielectric layer reliability in structure.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
First embodiment
With reference to shown in Fig. 2 and Fig. 3, a kind of test knot for being used to carry out dielectric layer reliability testing is present embodiments provided
Structure, the dielectric layer are the dielectric layer in integrated circuit metal interconnection structure, and integrated circuit metal interconnection structure is included positioned at Jie
Interconnection line and dual-damascene structure in matter layer, the dual-damascene structure have the connector electrically connected with wherein one interconnection linear contact lay, should
For a part for connector above the dielectric layer between adjacent two interconnection line, the test structure includes metal interconnection structure, institute
Stating the metal interconnection structure of test structure includes：
Substrate 100；
Dielectric layer 110 on substrate 100；
Two the first metal interconnecting wires 120 in dielectric layer 110, two the first metal interconnecting wires 120 are in broach
Shape, the comb portion 121 of two the first metal interconnecting wires 120 are staggered；
Dual-damascene structure 130 in dielectric layer 110 and above the first metal interconnecting wires 120, dual-damascene structure
130 have contact with the first metal interconnecting wires 120 electrically connect connector 131, and above connector 131 and with connector 131
The second metal interconnecting wires 132 being integrated.Projection of second metal interconnecting wires 132 on the surface of substrate 100 only with one first
Projection intersecting vertical of the metal interconnecting wires 120 on the surface of substrate 100.
Dielectric layer 110 top of the part for connector 131 between adjacent two first metal interconnecting wires 120, makes connector
Horizontal interval G between 131 and the first neighbouring metal interconnecting wires 120 is smaller.Therefore, the test structure of the present embodiment is considered
Connector 131 influences to caused by the reliability of dielectric layer 110, therefore can test out integrated circuit exactly according to the test structure
Dielectric layer reliability in metal interconnection structure.
When the dielectric layer to the test structure carries out reliability testing, the two poles of the earth of test voltage can be electrically connected
To two the first metal interconnecting wires 120.
In the present embodiment, by making two the first metal interconnecting wires 120 be arranged to comb teeth-shaped, and two the first metals are mutual
The comb portion 121 of line 120 is staggered, and can reduce the face that all first metal interconnecting wires 120 occupy on the substrate 100
Product, and the arrangement side of the arrangement mode of this metal interconnecting wires and metal interconnecting wires in the metal interconnection structure of actual integrated circuit
Formula is more similar, can more precisely test out the dielectric layer reliability in integrated circuit metal interconnection structure.
In the present embodiment, dual-damascene structure 130 is formed using self-aligned via holes technique.In other embodiments, double edges
Embedding structure 130 can also be formed using other techniques.
In the present embodiment, the material of dielectric layer 110 can be silica, silicon oxynitride or organic nitrogen oxides.Certainly,
Dielectric layer 110 can also be other common dielectric materials.
Second embodiment
Difference between second embodiment and first embodiment is：In the present embodiment, as shown in figure 4, the second metal
Projection of the projection with all first metal interconnecting wires 120 on the surface of a substrate of interconnection line 132 on the surface of a substrate intersects vertical
Directly.
3rd embodiment
Difference between 3rd embodiment and first embodiment is：In the present embodiment, as shown in figure 5, the test
The metal interconnection structure of structure has three the first metal interconnecting wires, respectively first the first metal interconnecting wires 120a, second
The first metal interconnecting wires of bar 120b, Article 3 the first metal interconnecting wires 120c, wherein, first the first metal interconnecting wires 120a is in
Comb teeth-shaped；The first metal interconnecting wires of Article 2 120b is in comb teeth-shaped；The first metal interconnecting wires of Article 3 120c has multiple parallel
In spaced first connecting line 121c, any three the first adjacent connecting line 121c, centrally located first connects
Wiring 121c two ends are fixedly connected by the second connecting line 122c with the first connecting line 121c of both sides, the first metal
Interconnection line 120a comb portion 121a and the first metal interconnecting wires 120b comb portion 121b with adjacent two first connecting lines
121c is staggered, and first the first metal interconnecting wires 120a comb portion 121a and the first metal interconnecting wires of Article 2 120b
Comb portion 121b be staggered.
In the present embodiment, first the first metal interconnecting wires 120a, the first metal interconnecting wires of Article 2 120b, Article 3
First metal interconnecting wires 120c arrangement mode, the area that all first metal interconnecting wires occupy on substrate can be reduced, and
In the metal interconnection structure of the arrangement mode of this metal interconnecting wires and actual integrated circuit the arrangement mode of metal interconnecting wires compared with
To be similar, the dielectric layer reliability in integrated circuit metal interconnection structure can be more precisely tested out.
Fourth embodiment
Difference between fourth embodiment and first embodiment is：In the present embodiment, as shown in fig. 6, the test
There are multiple parallel intervals to arrange and be in the first metal interconnecting wires 120 of strip for the metal interconnection structure of structure.
It should be noted that the first metal is mutual in the metal interconnection structure of the test structure in the inventive solutions
Bar number, shape and the arrangement mode of line should not be limited only to above-described embodiment；The shape of second metal interconnecting wires and row
Mode for cloth also should not be limited only to above-described embodiment, can make corresponding regulation according to practical application so that can be exactly
Test out the dielectric layer reliability in integrated circuit metal interconnection structure.
In the present invention, each embodiment uses laddering literary style, emphasis description and the difference of previous embodiment, each to implement
Same section in example is referred to previous embodiment.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (8)
1. a kind of test structure for being used to carry out dielectric layer reliability testing, the dielectric layer are that integrated circuit metal mutually links
Dielectric layer in structure, integrated circuit metal interconnection structure include the interconnection line and dual-damascene structure in dielectric layer, this pair edge
Embedding structure have with the connector that electrically connect of interconnection linear contact lay, dielectric layer top of the connector between adjacent two interconnection line,
Characterized in that, the test structure includes metal interconnection structure, the metal interconnection structure of the test structure includes：
Substrate；
Dielectric layer on the substrate；
A plurality of first metal interconnecting wires in the dielectric layer；
Dual-damascene structure in the dielectric layer and above first metal interconnecting wires, the dual-damascene structure tool
There is the connector that electrical connection is contacted with first metal interconnecting wires, and to be located at adjacent two first metal mutual for a part for the connector
Above dielectric layer between line.
2. test structure as claimed in claim 1, it is characterised in that the dual-damascene structure of the test structure also has：Position
The second metal interconnecting wires being integrated above the connector and with the connector.
3. test structure as claimed in claim 2, it is characterised in that second metal interconnecting wires are on the substrate surface
Projection intersecting vertical of the projection at least with first metal interconnecting wires on the substrate surface.
4. test structure as claimed in claim 1, it is characterised in that the metal interconnection structure of the test structure at least has
Two are staggered in the first metal interconnecting wires of comb teeth-shaped, the comb portion of two first metal interconnecting wires.
5. test structure as claimed in claim 1, it is characterised in that the metal interconnection structure of the test structure at least has
Three the first metal interconnecting wires, respectively first, second and third the first metal interconnecting wires, first and second the first metal interconnection
Line is in comb teeth-shaped, and the metal interconnecting wires of Article 3 first have the first connecting line of multiple parallel intervals arrangements, and any three
In individual the first adjacent connecting line, two ends of the first centrally located connecting line pass through the second connecting line and both sides
The first connecting line be fixedly connected, the comb portions of first and second first metal interconnecting wires with adjacent two first connecting line
It is staggered, and the comb portion of the comb portion and the metal interconnecting wires of Article 2 first of first first metal interconnecting wires interlocks
Arrangement.
6. test structure as claimed in claim 1, it is characterised in that the metal interconnection structure of the test structure has a plurality of
The metal interconnecting wires of strip first of parallel interval arrangement.
7. test structure as claimed in claim 1, it is characterised in that dual-damascene structure is to be formed using self-aligned via holes technique
Dual-damascene structure.
8. the test structure as described in any one of claim 1 to 7, it is characterised in that the material of the dielectric layer be silica,
Silicon oxynitride or organic nitrogen oxides.
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| CN201310754228.5A CN104752409B (en) | 2013-12-31 | 2013-12-31 | For carrying out the test structure of reliability testing to dielectric layer |
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| CN104752409A CN104752409A (en) | 2015-07-01 |
| CN104752409B true CN104752409B (en) | 2017-11-28 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101546751A (en) * | 2008-03-25 | 2009-09-30 | 中芯国际集成电路制造(上海)有限公司 | Electro-migration testing structure capable of improving service life |
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| US6882738B2 (en) * | 1994-03-17 | 2005-04-19 | Digimarc Corporation | Methods and tangible objects employing textured machine readable data |
| US6673692B2 (en) * | 2000-06-28 | 2004-01-06 | Micron Technology, Inc. | Method and apparatus for marking microelectronic dies and microelectronic devices |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101546751A (en) * | 2008-03-25 | 2009-09-30 | 中芯国际集成电路制造(上海)有限公司 | Electro-migration testing structure capable of improving service life |
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