CN104658926B - Element anoxybiotic encapsulating method and its element being made - Google Patents
Element anoxybiotic encapsulating method and its element being made Download PDFInfo
- Publication number
- CN104658926B CN104658926B CN201510106966.8A CN201510106966A CN104658926B CN 104658926 B CN104658926 B CN 104658926B CN 201510106966 A CN201510106966 A CN 201510106966A CN 104658926 B CN104658926 B CN 104658926B
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- CN
- China
- Prior art keywords
- pptc
- groove
- anoxybiotic
- hemisection
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- OKUGPJPKMAEJOE-UHFFFAOYSA-N S-propyl dipropylcarbamothioate Chemical compound CCCSC(=O)N(CCC)CCC OKUGPJPKMAEJOE-UHFFFAOYSA-N 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 101000669528 Homo sapiens Tachykinin-4 Proteins 0.000 claims abstract description 35
- 102100039365 Tachykinin-4 Human genes 0.000 claims abstract description 35
- 239000000565 sealant Substances 0.000 claims abstract description 27
- 239000012530 fluid Substances 0.000 claims abstract description 25
- 238000007789 sealing Methods 0.000 claims abstract description 19
- 239000003292 glue Substances 0.000 claims abstract description 17
- 238000005520 cutting process Methods 0.000 claims abstract description 15
- 238000007639 printing Methods 0.000 claims abstract description 13
- 238000003854 Surface Print Methods 0.000 claims abstract description 4
- 238000003776 cleavage reaction Methods 0.000 claims description 10
- 230000007017 scission Effects 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 4
- 229920006335 epoxy glue Polymers 0.000 claims description 3
- 239000004744 fabric Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 5
- 230000006872 improvement Effects 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- CLDVQCMGOSGNIW-UHFFFAOYSA-N nickel tin Chemical compound [Ni].[Sn] CLDVQCMGOSGNIW-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000008293 association colloid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000011536 re-plating Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Present invention is disclosed a kind of element anoxybiotic encapsulating method, including：A PPTC substrates are provided, the substrate is formed by some PPTC units repeated arrangements, to the upper and lower surface printing fluid sealant of the substrate；Surface one upper and lower to substrate carries out first time hemisection, forms the first groove；To the first cutting surfaces printing and sealing glue, the first groove is filled and led up；Second of hemisection of progress another to the upper and lower surface of substrate, forms the second groove；To the second cutting surfaces printing and sealing glue, the second groove is filled and led up；Cut entirely with the second groove in the first groove；Wherein, the depth of cut sum of first time hemisection and second of hemisection is more than plate body thickness.The present invention also provides the element according to this method insulated enclosure, the advantage is that, plate face flatness is high, and sealant is difficult to form cavity, and anoxybiotic effect is good, reduces the risk of short circuit.
Description
Technical field
The invention belongs to electronic products manufacturing technology field, and in particular to a kind of element anoxybiotic encapsulating method and its be made
Element.
Background technology
PPTC (Polymeric Positive Temperature Coefficient, high molecular positive temperature coefficient electricity
Resistance), circuit can be shielded when in current surge, excessive, temperature is too high.By PPTC concatenations in circuit, in normal condition
Under, its resistance is small, and loss is also small, and circuit normal work is not influenceed；If but having excessively stream（Such as short circuit）Occur, the rise of its temperature, resistance
Value is drastically raised therewith, reaches the effect of limitation electric current, it is to avoid the component damaged in circuit.
PPTC need to use the epoxy glue seal using epoxy resin as representative with anoxybiotic, only reserve electrode part and other electronics
Component is electrically connected with.With reference to Fig. 1 a to Fig. 1 f, during prior art sealing PPTC, first to by some PPTC units 10 being connected
The PPTC substrates 1 that matrix arrangement is constituted are printed on one side fluid sealant 2, then cut off the connection between PPTC units 10 with wide otch 3.For
Fixedly separated PPTC units 10 are an entirety, in the print glue surface Continuous pressing device for stereo-pattern 4 of PPTC substrates 1.Then, in PPTC substrates 1
The opposite another side printing and sealing glue 2 of glue surface is printed, while making fluid sealant 2 insert in wide otch 3.After adhesive curing to be sealed, in width
On the position of the edge of a knife 3, fluid sealant 2 is cut off with narrow otch 5, sealed PPTC units 10 are made.
Prior art the disadvantage is that, fluid sealant is gradually printed using one side.In the fluid sealant of coating fusing, pcb board
Heated, stress is concentrated to the one side more than glue, and plate face bends, finished product poor flatness.In addition, irrigating fluid sealant into otch
When, because colloid viscosity is high, poor fluidity, easily there is cavity, cause the discontented situation of injecting glue in otch, influence PPTC sealings
Property, cause product failure.
The content of the invention
It is an object of the invention to solve the product poor flatness of existing anoxybiotic Sealing Technology production, poorly sealed ask
Topic.
For achieving the above object, the present invention provides a kind of element anoxybiotic encapsulating method, comprises the following steps：
A PPTC substrates are provided, the substrate is formed by some PPTC units repeated arrangements, PPTC units include electrode, to this
The upper and lower surface printing fluid sealant of substrate；
Surface one upper and lower to substrate carries out first time hemisection, forms the first groove；
To the first cutting surfaces printing and sealing glue, the first groove is filled and led up；
Second of hemisection of progress another to the upper and lower surface of substrate, forms the second groove；
To the second cutting surfaces printing and sealing glue, the second groove is filled and led up；
Cut entirely with the second groove in the first groove；
Wherein, the depth of cut sum of first time hemisection and second of hemisection is more than plate body thickness.
As the further improvement of an embodiment of the present invention, first time hemisection is relative with the cleavage site of second of hemisection
Should.
As the further improvement of an embodiment of the present invention, the cleavage site of first time hemisection and second of hemisection is located at
The electrode edge of PPTC units.
As the further improvement of an embodiment of the present invention, the first groove and the second groove are located at opposite two surface of substrate
And position is corresponding.
As the further improvement of an embodiment of the present invention, first time hemisection is combined with second of hemisection, cuts off substrate
Body.
As the further improvement of an embodiment of the present invention, printing and sealing glue is to whole plate applying paste.
As the further improvement of an embodiment of the present invention, fluid sealant is epoxy glue.
As the further improvement of an embodiment of the present invention, the upper and lower surface of substrate forms on vertical direction and protrudes from table
The boss in face, boss is located in PPTC cell electrodes and close to cleavage site.
As the further improvement of an embodiment of the present invention, the electrode of PPTC units locally adds one layer of copper of plating, is formed convex
Platform.
Another aspect of the present invention provides a kind of PPTC elements, is formed by above method insulated enclosure.
Compared with prior art, the anoxybiotic encapsulating method provided and its PPTC elements being made of the invention, plate face flatness
Height, sealant is difficult to form cavity, and anoxybiotic effect is good, reduces the risk of short circuit.
Brief description of the drawings
Fig. 1 a ~ 1f is the side view using the sealed PPTC of prior art anoxybiotic；
Fig. 2 is a kind of top view of PPTC substrates；
Fig. 3 is the side view of the embodiment of element anoxybiotic encapsulating method one of the present invention；
Fig. 4 is the side view of the embodiment of element anoxybiotic encapsulating method one of the present invention；
Fig. 5 is the flow chart of element anoxybiotic encapsulating method of the present invention.
Embodiment
Below with reference to embodiment shown in the drawings, the present invention will be described in detail.But these embodiments are simultaneously
The present invention is not limited, structure that one of ordinary skill in the art is made according to these embodiments, method or functionally
Conversion is all contained in protection scope of the present invention.
The matrix arrangement of PPTC units 10 to be sealed constitutes PPTC substrates 1.It is mono- that Fig. 1 a and Fig. 2 schematically show some PPTC
The position of electrode 13 that member 10 is arranged as PPTC units 10 in the structure of PPTC substrates 1, two figures is different, it is adaptable to different electronics productions
Product, but it is applied to the anoxybiotic encapsulating method of the present invention.The present disclosure additionally applies for the PPTC units of other similar Structural Transformations.
PPTC substrates and PPTC units are flat sheet-like structure, define its two opposite maximum area surface for it is upper,
Lower surface.
With reference to Fig. 1 a, Fig. 2 and Fig. 3, no matter how the structure of electrode 13 changes, each PPTC units 10 to be sealed are wrapped
Include the flat layer 15 of high molecular polymer composition.Copper electrode 13 is located at the upper and lower surface of flat layer 15, for PPTC and other yuan
The electric connection of part.Adjacent PPTC units 10, its flat layer 15 is connected.The process for sealing PPTC is also by PPTC substrates 1
On PPTC units 10 be divided into the process of monomer.
In an embodiment of the present invention, comprise the following steps：
S1, provide a PPTC substrates 1, to thereon, the nearly cut edge region of lower surface copper electrode 13 add plating one layer of copper, formed
The boss 17 on surface is protruded from vertical direction.For every PPTC units 10, upper and lower surface respectively forms a boss 17, point
On two electrodes 13 that Wei Yu be electrically not relative.Fig. 3 shows to be located at the model of each side in upper and lower surface of PPTC units 10 in electrode 13
The position of boss 17 in example.Boss 17 is close but is not located at cleavage site a and a ' in following cutting steps.It is easy to during cutting
Cause into edge of a knife cut edge copper top layer flange.Flange layers of copper, which is exposed, can cause product short circuit outside sealed insulation layer.Boss 17
Effect is, in cutting action, and cut edge layers of copper flange is no more than the height of boss 17, it is ensured that electrode is covered by insulation glue-line
In.
It should be appreciated that the step of above-mentioned plus plating boss 17 are not necessarily, also can be by the way of adjustment cutting technique
The generation of flange phenomenon is reduced, yield is improved.
S2, to the upper and lower surface printing fluid sealant of PPTC substrates 1.Specifically, after fluid sealant fusing, with scraper even spread
To the upper and lower surface of PPTC substrates 1, resolidification fluid sealant.In this way, when substrate 1 is heated in follow-up printing and sealing glue step, upper,
Lower surface stress is averaged, and is difficult flexural deformation.
Fluid sealant generally uses epoxy resin, or other equivalent substitutions.
S3, to the upper and lower surface one of PPTC substrates 1 carry out first time hemisection, formed the first groove.Herein, term " half
Cut " refer to from a surface to opposite another surface and be switched to specific plate body thickness, substrate is still remained connected to, be not turned off.In this way,
The step of taping can be omitted, maintains substrate to be an entirety without adhesive tape.
It should be noted that the depth of cut of hemisection is adjusted because of the hardness and thickness parameter adaptability of PPTC substrates 1, no
It should be understood to literal 1/2 plate body thickness.
Cleavage site a is located at the edge of electrode 13 of PPTC units 10, and groove is formed between adjacent PPTC units 10.Groove
Width is suitable with the width of wide otch in the prior art.
S4, to the first cutting surfaces printing and sealing glue.Specifically, after fusing fluid sealant, using scraper even spread extremely
The cutting surfaces whole plate of PPTC substrates 1.This step purpose is to walk scraper by whole plate, fluid sealant is pressed into the first groove, made
First cutting surfaces are filled out as flat surface.The plane domain of printing and sealing glue in abovementioned steps S1, by increasing scraper power
Degree, can reduce newly-increased bondline thickness.
Solidify fluid sealant.
S5, second of hemisection of progress another to the upper and lower surface of PPTC substrates 1, form the second groove.Cleavage site a ' is located at
The edge of electrode 13 of PPTC units 10, the cleavage site with foregoing first groove is corresponding.First time hemisection and second of hemisection
Depth of cut sum be more than plate body thickness, i.e. the connection of the body of second of hemisection cut-out PPTC substrates 1, make the first groove with
Second groove insertion.Substrate 1 is still connected as entirety by the fluid sealant of the first recessed in-tank-solidification.The groove of insertion is equivalent to existing
There is the wide otch in technology, the fluid sealant of the first recessed in-tank-solidification is played to be acted on adhesive tape identical in the prior art, and set
Effect more preferably, reduces the difficulty of processing of subsequent handling.
S6, to the second cutting surfaces printing and sealing glue.Melt after fluid sealant, cut with scraper even spread to PPTC substrates 1
Cut surface whole plate.This step purpose is to walk scraper by whole plate, fluid sealant is pressed into the second groove, makes the second cutting surfaces
Filled out as flat surface.
Solidify fluid sealant.
S7, using minor diameter knife in a groove between cut entirely at b points, cut off fluid sealant, substrate 1 is divided into independent PPTC
Unit 10.
With reference to Fig. 4, the PPTC units 10 after oxygen barrier sealing are stained with silver paste 41 at electrode 13, so that nickeltin set.
The surface re-plating nickeltin 51 of silver slurry layer 41.
In element anoxybiotic encapsulating method of the present invention, groove not insertion plate body, depth is less than the depth of wide otch in the prior art
Degree, therefore be easier to make sealing fill up groove, the mobility of less external force association colloid itself may achieve in purpose, groove not
Easily form cavity.
It should be understood that, although the present specification is described in terms of embodiments, but not each embodiment only includes one
Individual independent technical scheme, this narrating mode of specification is only that for clarity, those skilled in the art will should say
Bright book is as an entirety, and the technical scheme in each embodiment may also be suitably combined to form those skilled in the art can
With the other embodiment of understanding.
Those listed above is a series of to be described in detail only for feasibility embodiment of the invention specifically
Bright, they simultaneously are not used to limit the scope of the invention, all equivalent implementations made without departing from skill spirit of the present invention
Or change should be included in the scope of the protection.
Claims (9)
1. a kind of element anoxybiotic encapsulating method is formed there is provided a PPTC substrates, the substrate by some PPTC units repeated arrangements,
The PPTC units include electrode, are characterised by, comprise the following steps：
To the upper and lower surface printing fluid sealant of substrate；
Surface one upper and lower to substrate carries out first time hemisection, forms the first groove；
To the first cutting surfaces printing and sealing glue, the first groove is filled and led up；
Second of hemisection of progress another to the upper and lower surface of substrate, forms the second groove；
To the second cutting surfaces printing and sealing glue, the second groove is filled and led up；
Cut entirely with the second groove in the first groove；
Wherein, first time hemisection is corresponding with the cleavage site of second of hemisection and depth of cut sum is more than plate body thickness.
2. element anoxybiotic encapsulating method according to claim 1, it is characterised in that the first time hemisection and for the second time half
The cleavage site cut is located at the electrode edge of PPTC units.
3. element anoxybiotic encapsulating method according to claim 1, it is characterised in that the first groove and the second groove position
In opposite two surface of substrate and position is corresponding.
4. element anoxybiotic encapsulating method according to claim 1, it is characterised in that the first time hemisection and for the second time half
Combination is cut, substrate body is cut off.
5. element anoxybiotic encapsulating method according to claim 1, it is characterised in that the printing and sealing glue is to be applied to whole plate
Cloth fluid sealant.
6. element anoxybiotic encapsulating method according to claim 1, it is characterised in that the fluid sealant is epoxy glue.
7. element anoxybiotic encapsulating method according to claim 1, it is characterised in that the upper and lower surface of substrate forms perpendicular
Nogata projects upwards the boss in surface, and the boss is located in the PPTC cell electrodes and close to cleavage site.
8. element anoxybiotic encapsulating method according to claim 7, it is characterised in that the PPTC cell electrodes locally add plating
One layer of copper, forms boss.
9. a kind of PPTC elements, it is characterised in that use any methods described insulated enclosures of claim 1-8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510106966.8A CN104658926B (en) | 2015-03-11 | 2015-03-11 | Element anoxybiotic encapsulating method and its element being made |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510106966.8A CN104658926B (en) | 2015-03-11 | 2015-03-11 | Element anoxybiotic encapsulating method and its element being made |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104658926A CN104658926A (en) | 2015-05-27 |
| CN104658926B true CN104658926B (en) | 2017-07-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510106966.8A Active CN104658926B (en) | 2015-03-11 | 2015-03-11 | Element anoxybiotic encapsulating method and its element being made |
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Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470232A (en) * | 2015-12-30 | 2016-04-06 | 宁波康强电子股份有限公司 | Manufacturing method for pre-packaged lead frame |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1379905A (en) * | 1999-09-14 | 2002-11-13 | 泰科电子有限公司 | Electrical device and method for manufacturing same |
| CN102447038A (en) * | 2010-10-14 | 2012-05-09 | 展晶科技(深圳)有限公司 | Formation method of light-emitting diode packaging structure |
| CN104392938A (en) * | 2014-10-29 | 2015-03-04 | 禾邦电子(苏州)有限公司 | Semiconductor chip packaging method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI456596B (en) * | 2012-07-31 | 2014-10-11 | Polytronics Technology Corp | Over-current protection device and method of making the same |
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2015
- 2015-03-11 CN CN201510106966.8A patent/CN104658926B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1379905A (en) * | 1999-09-14 | 2002-11-13 | 泰科电子有限公司 | Electrical device and method for manufacturing same |
| CN102447038A (en) * | 2010-10-14 | 2012-05-09 | 展晶科技(深圳)有限公司 | Formation method of light-emitting diode packaging structure |
| CN104392938A (en) * | 2014-10-29 | 2015-03-04 | 禾邦电子(苏州)有限公司 | Semiconductor chip packaging method |
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| Publication number | Publication date |
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| CN104658926A (en) | 2015-05-27 |
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