CN104601161A - Impedance correcting circuit and method - Google Patents
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Abstract
The invention provides an impedance correcting circuit and method. The impedance correcting circuit comprises a current source generation circuit, an external accurate resistor, a selection switch, a sampling comparison circuit, a resistance array with a switch, a logic control circuit and the like. Firstly, the switch controls a current source to be communicated with an external resistance branch and an internal resistance branch according to a certain time sequence, the size relationship between internal resistance and external resistance is obtained through the comparison circuit after the resistance size is converted into the voltage size, secondly, switch conduction conditions of the switch resistance array are adjusted according to comparison results, the process is repeatedly adjusted six times, the internal resistance can be equal to the external resistance, so that impedance matching functions are achieved, and the circuit is simple in structure and can be widely applied.
Description
Technical field
The invention belongs to as design of electronic circuits technology, relate to a kind of impedance calibration circuit and method.
Background technology
Impedance calibration circuit is widely used in various high-speed transmission interface circuit, and in order to reduce reflected wave thus reach maximum through-put power, the resistance value of each high-speed transmission interface has the size of regulation usually.Because chip internal resistance has drift situation usually, so need a circuit that can correct impedance matching to accomplish accurate impedance matching.
Usually, people can be trimmed resistance by laser beam when middle survey, or reach impedance matching by technology controlling and process.But all can there is impedance deviation because of the change of application conditions in these two kinds of methods, be not desirable way.
For this reason, propose a kind of new impedance calibration circuit and method, carry out the internal driving of precise calibration high-speed transmission interface circuit.
Summary of the invention
The technical problem occurring impedance deviation because of the change of application conditions is there is in order to solve existing impedance correction method, the invention provides a kind of impedance calibration circuit and method, outside precise resistance value and internal resistance are converted to voltage by the method respectively, then by comparing this two voltages, according to the size of comparative result adjustment internal resistance, through six such comparisons and adjustment, internal resistance is finally made to reach accurate value.
Concrete technical solution of the present invention is as follows:
A circuit for impedance correction, is characterized in that: comprise current source module, switching circuit, sampling comparison circuit, logic control circuit, external resistance and internal adjustable resistance;
Described current source module is used for providing bias current to external resistance and internal adjustable resistance;
Described switching circuit is for controlling being communicated with of external resistance/internal adjustable resistance and current source module and comparison circuit of sampling;
Described sampling comparison circuit is for obtaining the comparative result of the internal adjustable resistance after adjustment and external resistance;
Described logic control circuit is used for the resistance of the comparative result adjustment internal adjustable resistance according to sampling comparison circuit feedback;
Described internal adjustable resistance comprises the electric resistance array and n resistance switch that columns is n, n resistance switch and each row one_to_one corresponding of electric resistance array, the equal ground connection in one end of each row resistance, the other end is all connected with resistance switch, and the resistance of adjacent two row resistance meets: Ri=2R (i-1) wherein 1≤i≤n.
Said switching circuit comprises single-pole double-throw switch (SPDT) K1 and single-pole double-throw switch (SPDT) K3, the fixed contact of above-mentioned single-pole double-throw switch (SPDT) K1 is connected with current source module, two moving contacts of above-mentioned single-pole double-throw switch (SPDT) K1 connect with external resistance place branch road or with internal adjustable resistance place branch road is corresponding respectively, the fixed contact of above-mentioned single-pole double-throw switch (SPDT) K3 is connected with sampling comparison circuit, and two moving contacts of above-mentioned single-pole double-throw switch (SPDT) K3 are respectively with external resistance place branch road with internal adjustable resistance place branch road is corresponding connects.
Above-mentioned sampling comparison circuit comprises electric capacity C1, electric capacity C2, K switch 2, K switch 4 and voltage comparator, one end of above-mentioned electric capacity C1 is connected with the fixed contact of single-pole double-throw switch (SPDT) K3, the above-mentioned other end of electric capacity C1 and the positive input of voltage comparator, the other end of electric capacity C1 connects through K switch 2 andlogic control circuit simultaneously, the inverting input of voltage comparator meets comparator common-mode voltage vcm and electric capacity C2 through K switch 4, the output termination logic control circuit of voltage comparator.
Above-mentioned current source module comprises operational amplifier, PMOS power tube, resistance R1, active electric current mirror, switch S 1,
Above-mentioned operational amplifier is connected with the grid of PMOS power tube M1, one end of resistance R1 is connected with the drain electrode of PMOS power tube and the inverting input of operational amplifier, the other end ground connection of resistance R1, above-mentioned active electric current mirror is by PMOS power tube generation current, then another branch road is mirrored to by NMOS tube M2, finally by exporting with operational amplifier the PMOS power tube that is connected and mirror image branch exports reference current, above-mentioned switch is used for the size of regulation output reference current, and reference voltage Vbg is input to operational amplifier normal phase input end.
Logic control circuit comprises signal generation module, signal presetting module and signal controlling module,
Above-mentioned signal generation module is for generation of n roadlock value conditioning signal, and each roadlock value conditioning signal controls a resistance switch;
Signal presetting module is used for giving initial value to n roadlock value conditioning signal;
Signal controlling module is used for the comparative result exported according to voltage comparator, controls multichannel resistance conditioning signal be in connected state with corresponding resistance switch according to resistance principle from big to small.
A method for impedance correction, its special character is: comprise the following steps:
1] current source is set:
Reference voltage Vbg is input to the normal phase input end of operational amplifier, the output of operational amplifier is as the input of PMOS power tube, convert through resistance R1 the inverting input that voltage is input to operational amplifier to by the electric current of PMOS power tube, form negative feedback, thus make the grid of PMOS power tube can obtain a stable voltage, this voltage is input in current mirror, obtains reference current, different reference currents can be obtained by the control of switch S 1; 2] sampling is compared:
2.1] moving contact of single-pole double-throw switch (SPDT) K1, single-pole double-throw switch (SPDT) K3 is all communicated with external resistance place branch road, first electric current flows through external resistance and produces a voltage Vext, Simultaneous Switching K2, K switch 4 close, the quantity of electric charge that electric capacity C1 stores is the quantity of electric charge of the upper storage of (Vext-Vcm) C1, C2 is VcmC2;
2.2] single-pole double-throw switch (SPDT) K1, single-pole double-throw switch (SPDT) K3 are communicated to built-in resistor place branch road, built-in resistor produces a voltage Vin, Simultaneous Switching K2, K switch 4 disconnect, according to the charge conservation on electric capacity C1, the voltage that can obtain the normal phase input end of voltage comparator is Vin-Vext+Vcm, and the voltage of the inverting input of comparator is always Vcm, the comparative result of voltage comparator output voltage Vin and voltage Vext;
When voltage Vin is greater than voltage Vext, it is 1 that voltage comparator exports;
When voltage Vin is less than voltage Vext, it is 0 that voltage comparator exports.
3] logic control:
3.1] signal generation module produces n roadlock value conditioning signal, and signal presetting module n roadlock value conditioning signal gives initial value: the highest order in n roadlock value conditioning signal is set to 1, and everybody is 0 for all the other;
3.2] signal controlling module is used for, according to the comparative result of voltage comparator output, being in connected state according to resistance principle control n roadlock value conditioning signal from big to small with corresponding resistance switch:
If voltage comparator Output rusults is 1,1 of highest order remains unchanged, and a secondary high position is set to 1 simultaneously, and everybody is set to 0 for all the other; If voltage comparator Output rusults is 0, extreme higher position is 0, a secondary high position is set to 1 simultaneously, and everybody is set to 0 for all the other, repeats this process n time successively by the order from a high position to low level, finally determines that nbit exports.
4] internal switch electric resistance array
The size of internal regulation resistance is controlled according to the nbit of Logic control module output.
Said n is 6.
Advantage of the present invention is as follows:
Impedance calibration circuit provided by the invention and method, be converted to voltage swing by resistance sizes, utilizes the method compared, make the external precise resistances of internal resistance Approach by inchmeal.This bearing calibration structure is simple, and precision is high, and can overcome and occur impedance deviation because of the change of application conditions.
Accompanying drawing explanation
Fig. 1 is the circuit realiration figure of method of the present invention;
Fig. 2 is that current source of the present invention produces circuit realiration figure.
Embodiment
Below in conjunction with the drawings and specific embodiments, technical scheme of the present invention is stated clearly and completely.Obviously; the embodiment stated is only the present invention's part embodiment, instead of whole embodiments, based on the embodiment in the present invention; the every other embodiment that those skilled in the art are not making creative work prerequisite and obtain, all belongs to protection scope of the present invention.
A circuit for impedance correction, comprises current source module, switching circuit, sampling comparison circuit, logic control circuit, external resistance and internal adjustable resistance; Current source module is used for providing bias current to external resistance and internal adjustable resistance; Switching circuit is for controlling being communicated with of external resistance/internal adjustable resistance and current source module and comparison circuit of sampling; Sampling comparison circuit is for obtaining the comparative result of the internal adjustable resistance after adjustment and external resistance; Logic control circuit is used for the resistance of the comparative result adjustment internal adjustable resistance according to sampling comparison circuit feedback; Internal adjustable resistance comprises the electric resistance array and n resistance switch that columns is n, n resistance switch and each row one_to_one corresponding of electric resistance array, the equal ground connection in one end of each row resistance, the other end is all connected with resistance switch, and the resistance of adjacent two row resistance meets: Ri=2R (i-1) wherein 1≤i≤n.Switching circuit comprises single-pole double-throw switch (SPDT) K1 and single-pole double-throw switch (SPDT) K3, the fixed contact of single-pole double-throw switch (SPDT) K1 is connected with current source module, two moving contacts of single-pole double-throw switch (SPDT) K1 connect with external resistance place branch road or with internal adjustable resistance place branch road is corresponding respectively, the fixed contact of single-pole double-throw switch (SPDT) K3 is connected with sampling comparison circuit, and two moving contacts of single-pole double-throw switch (SPDT) K3 are respectively with external resistance place branch road with internal adjustable resistance place branch road is corresponding connects.
Sampling comparison circuit comprises electric capacity C1, electric capacity C2, K switch 2, K switch 4 and voltage comparator, one end of above-mentioned electric capacity C1 is connected with the fixed contact of single-pole double-throw switch (SPDT) K3, the above-mentioned other end of electric capacity C1 and the positive input of voltage comparator, the other end of electric capacity C1 connects through K switch 2 andlogic control circuit simultaneously, the inverting input of voltage comparator meets comparator common-mode voltage vcm and electric capacity C2 through K switch 4, the output termination logic control circuit of voltage comparator.Current source module comprises operational amplifier, PMOS power tube, resistance R1, active electric current mirror, switch S 1, operational amplifier is connected with the grid of PMOS power tube M1, one end of resistance R1 is connected with the drain electrode of PMOS power tube and the inverting input of operational amplifier, the other end ground connection of resistance R1, active electric current mirror is by PMOS power tube generation current, then another branch road is mirrored to by NMOS tube M2, finally by exporting with operational amplifier the PMOS power tube that is connected and mirror image branch exports reference current, above-mentioned switch is used for the size of regulation output reference current, reference voltage Vbg is input to operational amplifier normal phase input end.Logic control circuit comprises signal generation module, signal presetting module and signal controlling module, and signal generation module is for generation of n roadlock value conditioning signal, and each roadlock value conditioning signal controls a resistance switch; Signal presetting module is used for giving initial value to n roadlock value conditioning signal; Signal controlling module is used for the comparative result exported according to voltage comparator, controls multichannel resistance conditioning signal be in connected state with corresponding resistance switch according to resistance principle from big to small.
A method for impedance correction, comprises the following steps:
1] current source is set:
Reference voltage Vbg is input to the normal phase input end of operational amplifier, the output of operational amplifier is as the input of PMOS power tube, convert through resistance R1 the inverting input that voltage is input to operational amplifier to by the electric current of PMOS power tube, form negative feedback, thus make the grid of PMOS power tube can obtain a stable voltage, this voltage is input in current mirror, obtains reference current, different reference currents can be obtained by the control of switch S 1;
2] sampling is compared:
2.1] moving contact of single-pole double-throw switch (SPDT) K1, single-pole double-throw switch (SPDT) K3 is all communicated with external resistance place branch road, first electric current flows through external resistance and produces a voltage Vext, Simultaneous Switching K2, K switch 4 close, the quantity of electric charge that electric capacity C1 stores is the quantity of electric charge of the upper storage of (Vext-Vcm) C1, C2 is VcmC2;
2.2] single-pole double-throw switch (SPDT) K1, single-pole double-throw switch (SPDT) K3 are communicated to built-in resistor place branch road, built-in resistor produces a voltage Vin, Simultaneous Switching K2, K switch 4 disconnect, according to the charge conservation on electric capacity C1, the voltage that can obtain the normal phase input end of voltage comparator is Vin-Vext+Vcm, and the voltage of the inverting input of comparator is always Vcm, the comparative result of voltage comparator output voltage Vin and voltage Vext;
When voltage Vin is greater than voltage Vext, it is 1 that voltage comparator exports;
When voltage Vin is less than voltage Vext, it is 0 that voltage comparator exports.
3] logic control:
3.1] signal generation module produces n roadlock value conditioning signal, and signal presetting module n roadlock value conditioning signal gives initial value: the highest order in n roadlock value conditioning signal is set to 1, and everybody is 0 for all the other;
3.2] signal controlling module is used for, according to the comparative result of voltage comparator output, being in connected state according to resistance principle control n roadlock value conditioning signal from big to small with corresponding resistance switch:
If voltage comparator Output rusults is 1,1 of highest order remains unchanged, and a secondary high position is set to 1 simultaneously, and everybody is set to 0 for all the other; If voltage comparator Output rusults is 0, extreme higher position is 0, a secondary high position is set to 1 simultaneously, and everybody is set to 0 for all the other, repeats this process n time successively by the order from a high position to low level, finally determines that nbit exports.
4] internal switch electric resistance array
The size of internal regulation resistance is controlled according to the nbit of Logic control module output.N is 6.
The invention provides a kind of circuit and method of impedance correction, the method comprises the following steps:
Step 1, arranges current source.
Be specially, defeated at the normal phase input end input reference voltage of operational amplifier, inverting input is the voltage that the electric current of power tube converts to through resistance R1, form negative feedback, thus make the grid of power tube can obtain a stable voltage, this voltage is input in current mirror, obtains reference current source, different current value sizes can be obtained by the control of K switch 1.
Step 2, sampling is compared.
Be specially, single-pole double-throw switch (SPDT) K1 is communicated on external resistance r_ext, and K2 closes simultaneously, and pressure drop electric current being flowed through to the generation of external resistance is sampled, and then K1 is communicated on internal resistance, and now K2 disconnects, and comparator is started working.
Step 3, logic control.
Be specially, be first 1 by extreme higher position, everybody is set to 0 for all the other, do step 2, then according to the result of comparator, it is high two that adjustment 6bit exports, if comparator Output rusults is 1,1 of highest order remains unchanged, and a secondary high position is set to 1 simultaneously, everybody is set to 0 for all the other, if comparator Output rusults is 0, extreme higher position is 0, a secondary high position is set to 1 simultaneously, everybody is set to 0 for all the other, repeats this process 6 times successively by the order from a high position to low level, finally determines that 6bit exports.
The invention provides a kind of circuit and method of impedance correction, outside precise resistance value and internal resistance are converted to voltage by the method respectively, then by comparing this two voltages, according to the size of comparative result adjustment internal resistance, through 6 such comparisons and adjustment, internal resistance is finally made to reach accurate value.Impedance calibration circuit provided by the invention and method, utilize comparator and Logic control module, makes the external precise resistances of internal resistance Approach by inchmeal.This bearing calibration structure is simple, and precision is high, and can overcome the impedance deviation occurred because of the change of application conditions.
The invention provides a kind of circuit and method of impedance correction, this impedance calibration circuit comprises electric current source generating circuit, outside precise resistances, selector switch, sampling comparison circuit, the electric resistance array of belt switch, logic control circuit etc.
Electric current source generating circuit, for generation of reference current, turns voltage for resistance; In reality, this current source (I1) is precision current source, can increase current value as required by switch S 1.
Sampling comparison circuit, for completing voltage compare.
Logic control module, for the control signal according to comparator results regulating resistance array.
Above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (7)
1. a circuit for impedance correction, is characterized in that: comprise current source module, switching circuit, sampling comparison circuit, logic control circuit, external resistance and internal adjustable resistance;
Described current source module is used for providing bias current to external resistance and internal adjustable resistance;
Described switching circuit is for controlling being communicated with of external resistance/internal adjustable resistance and current source module and comparison circuit of sampling;
Described sampling comparison circuit is for obtaining the comparative result of the internal adjustable resistance after adjustment and external resistance;
Described logic control circuit is used for the resistance of the comparative result adjustment internal adjustable resistance according to sampling comparison circuit feedback;
Described internal adjustable resistance comprises the electric resistance array and n resistance switch that columns is n, n resistance switch and each row one_to_one corresponding of electric resistance array, the equal ground connection in one end of each row resistance, the other end is all connected with resistance switch, and the resistance of adjacent two row resistance meets: Ri=2R (i-1) wherein 1≤i≤n.
2. the circuit of impedance correction according to claim 1, it is characterized in that: described switching circuit comprises single-pole double-throw switch (SPDT) K1 and single-pole double-throw switch (SPDT) K3, the fixed contact of described single-pole double-throw switch (SPDT) K1 is connected with current source module, two moving contacts of described single-pole double-throw switch (SPDT) K1 connect with external resistance place branch road or with internal adjustable resistance place branch road is corresponding respectively, the fixed contact of described single-pole double-throw switch (SPDT) K3 is connected with sampling comparison circuit, two moving contacts of described single-pole double-throw switch (SPDT) K3 are respectively with external resistance place branch road with internal adjustable resistance place branch road is corresponding connects.
3. the circuit of impedance correction according to claim 1, it is characterized in that: described sampling comparison circuit comprises electric capacity C1, electric capacity C2, K switch 2, K switch 4 and voltage comparator, one end of described electric capacity C1 is connected with the fixed contact of single-pole double-throw switch (SPDT) K3, the described other end of electric capacity C1 and the positive input of voltage comparator, the other end of electric capacity C1 connects through K switch 2 andlogic control circuit simultaneously, the inverting input of voltage comparator meets comparator common-mode voltage vcm and electric capacity C2 through K switch 4, the output termination logic control circuit of voltage comparator.
4., according to the circuit of arbitrary described impedance correction of claim 1-3, it is characterized in that: described current source module comprises operational amplifier, PMOS power tube, resistance R1, active electric current mirror, switch S 1,
Described operational amplifier is connected with the grid of PMOS power tube M1, one end of resistance R1 is connected with the drain electrode of PMOS power tube and the inverting input of operational amplifier, the other end ground connection of resistance R1, described active electric current mirror is by PMOS power tube generation current, then another branch road is mirrored to by NMOS tube M2, finally by exporting with operational amplifier the PMOS power tube that is connected and mirror image branch exports reference current, described switch is used for the size of regulation output reference current, and reference voltage Vbg is input to operational amplifier normal phase input end.
5. the circuit of impedance correction according to claim 4, is characterized in that: logic control circuit comprises signal generation module, signal presetting module and signal controlling module,
Described signal generation module is for generation of n roadlock value conditioning signal, and each roadlock value conditioning signal controls a resistance switch;
Signal presetting module is used for giving initial value to n roadlock value conditioning signal;
Signal controlling module is used for the comparative result exported according to voltage comparator, controls multichannel resistance conditioning signal be in connected state with corresponding resistance switch according to resistance principle from big to small.
6. a method for impedance correction, is characterized in that: comprise the following steps:
1] current source is set:
Reference voltage Vbg is input to the normal phase input end of operational amplifier, the output of operational amplifier is as the input of PMOS power tube, convert through resistance R1 the inverting input that voltage is input to operational amplifier to by the electric current of PMOS power tube, form negative feedback, thus make the grid of PMOS power tube can obtain a stable voltage, this voltage is input in current mirror, obtains reference current, different reference currents can be obtained by the control of switch S 1; 2] sampling is compared:
2.1] moving contact of single-pole double-throw switch (SPDT) K1, single-pole double-throw switch (SPDT) K3 is all communicated with external resistance place branch road, first electric current flows through external resistance and produces a voltage Vext, Simultaneous Switching K2, K switch 4 close, the quantity of electric charge that electric capacity C1 stores is the quantity of electric charge of the upper storage of (Vext-Vcm) C1, C2 is VcmC2;
2.2] single-pole double-throw switch (SPDT) K1, single-pole double-throw switch (SPDT) K3 are communicated to built-in resistor place branch road, built-in resistor produces a voltage Vin, Simultaneous Switching K2, K switch 4 disconnect, according to the charge conservation on electric capacity C1, the voltage that can obtain the normal phase input end of voltage comparator is Vin-Vext+Vcm, and the voltage of the inverting input of comparator is always Vcm, the comparative result of voltage comparator output voltage Vin and voltage Vext;
When voltage Vin is greater than voltage Vext, it is 1 that voltage comparator exports;
When voltage Vin is less than voltage Vext, it is 0 that voltage comparator exports;
3] logic control:
3.1] signal generation module produces n roadlock value conditioning signal, and signal presetting module n roadlock value conditioning signal gives initial value: the highest order in n roadlock value conditioning signal is set to 1, and everybody is 0 for all the other;
3.2] signal controlling module is used for, according to the comparative result of voltage comparator output, being in connected state according to resistance principle control n roadlock value conditioning signal from big to small with corresponding resistance switch:
If voltage comparator Output rusults is 1,1 of highest order remains unchanged, and a secondary high position is set to 1 simultaneously, and everybody is set to 0 for all the other; If voltage comparator Output rusults is 0, extreme higher position is 0, a secondary high position is set to 1 simultaneously, and everybody is set to 0 for all the other, repeats this process n time successively by the order from a high position to low level, finally determines that nbit exports;
4] internal switch electric resistance array:
The size of internal regulation resistance is controlled according to the nbit of Logic control module output.
7. the method for impedance correction according to claim 6, is characterized in that: described n is 6.
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| WO2017143624A1 (en) * | 2016-02-24 | 2017-08-31 | 中国电子科技集团公司第二十四研究所 | On-chip resistor self-correction circuit and method for chip |
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Application publication date: 20150506 |