CN104600206A - OLED device and method for manufacturing OLED device - Google Patents
OLED device and method for manufacturing OLED device Download PDFInfo
- Publication number
- CN104600206A CN104600206A CN201510015773.1A CN201510015773A CN104600206A CN 104600206 A CN104600206 A CN 104600206A CN 201510015773 A CN201510015773 A CN 201510015773A CN 104600206 A CN104600206 A CN 104600206A
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- Prior art keywords
- transparent
- insulating barrier
- layer
- glass substrate
- negative photoresist
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- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 41
- 239000011521 glass Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 230000004888 barrier function Effects 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 11
- 238000001035 drying Methods 0.000 claims description 8
- 238000005538 encapsulation Methods 0.000 claims description 5
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000012780 transparent material Substances 0.000 claims description 3
- 238000000926 separation method Methods 0.000 abstract 2
- 238000005516 engineering process Methods 0.000 description 5
- 239000003292 glue Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 2
- 239000010405 anode material Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses an OLED (Organic Light Emitting Diode) device and a method for manufacturing the OLED device. The OLED device comprises a transparent glass substrate, a plurality of transparent anode layers spaced on the glass substrate, a plurality of insulating layers arranged among the anode layers and spaced on the glass substrate, and a plurality of separation pillars correspondingly arranged on the insulating layers; the insulating layers and the separation pillars are made of transparent negative photoresist and the cross section of each insulating layer is in the shape of trapezoid or square. Besides the invention further discloses a method for manufacturing the OLED device. Each insulating layer is made of negative photoresist and in the shape of trapezoid or square, thus the display area is completely transparent.
Description
Technical field
The invention belongs to OLED Display Technique field, more specifically, relate to the manufacture method of a kind of OLED and OLED.
Background technology
OLED is formed usually like this: first electrode (transparency electrode) of printing opacity, deposit OLED medium on the first electrode and the second electrode (metal electrode) be positioned at above OLED medium.Transparency electrode is as the anode layer of device, and metal electrode is as the negative electrode of device.Apply high level to transparency electrode, apply low level to metal electrode and make device luminous.The negative electrode (anode layer) parallel to each other that one group of anode layer (negative electrode) parallel to each other is vertical with it with one group forms two-dimentional X-Y addressing matrix.
Current oled light carving technology as shown in Figure 1, glass substrate 12 generates anode layer 11, and insulating barrier 14 uses positive photoresist (trapezoid) to complete, and insulated column 13 uses negative photoresist to make (inverted trapezoidal) and completes.Positive photoresist is opaque, so current OLED cannot realize all-transparent display.
Summary of the invention
In order to overcome above-mentioned weak point of the prior art, especially will solve cannot the technical problem of all-transparent, the invention provides following technical scheme:
According to an aspect of the present invention, provide a kind of OLED, it comprises transparent glass substrate, in a plurality of transparent anode layers be spaced on described glass substrate, to be distributed between described anode layer and to be spaced the insulating barrier on described glass substrate in a plurality of, and in a plurality of and correspondence is laid on the insulated column on described insulating barrier; The material of described insulating barrier and insulated column is transparent negative photoresist, and the cross sectional shape of the every bar of described insulating barrier is trapezoid or square.
Further, when the cross sectional shape of the every bar of described insulating barrier is trapezoid, the angle of the trapezoid middle part of the side and top is 90 degree-120 and spends.
Further, described OLED also comprises and is laid in described anode layer and organic luminous layer between described insulating barrier and between described insulated column, the encapsulation cover plate that is laid in the cathode layer on described organic luminous layer and described insulated column and is positioned on described cathode layer, and the material of described cathode layer and encapsulated layer is transparent material.
Further, described anode layer is ITO layer, and described cathode layer materials is magnesium silver alloy.
Further, the thickness of described insulating barrier is 1.5um.
Further, the thickness of described glass substrate is 0.5-0.7mm, and the thickness of anode layer is 150nm, and the thickness of insulated column is 3.2-3.9um.
According to a further aspect in the invention, provide a kind of manufacture method of OLED, comprise the steps:
(1) transparent glass substrate is provided;
(2) the transparent anode layer formed on described glass substrate, described anode layer is that a plurality of are spaced;
(3) on described glass substrate, be coated with transparent negative photoresist make insulating barrier, described insulating barrier to be distributed between described anode layer and to be spaced in a plurality of, and the cross sectional shape of the every bar of described insulating barrier is trapezoid or square;
(4) on described insulating barrier, be coated with negative photoresist make insulated column.
Further, shape is that the making of trapezoid or foursquare insulating barrier comprises the steps: in described step (3)
Under 110 ~ 125 degrees Celsius, carry out preliminary drying to transparent negative photoresist, preliminary drying time is 125 ~ 140 seconds;
Expose transparent negative photoresist, exposure is 30 ~ 50mj/com;
Toast transparent negative photoresist, the time is 150 ~ 250 seconds, and temperature is 115 degrees Celsius ~ 120 degrees Celsius;
Transparent negative photoresist is developed, developing time 1 ~ 2 minute;
To negativity transparent photomask glue under 220 ~ 250 degrees celsius, solidify 500 ~ 600 seconds.
Further, be also included in clean up on anode layer in described step (2) and plate layer of transparent conducting film again, form double-layer transparent conductive film.
Further, the material of described double-layer transparent conductive film is Mo/Al/Mo and ITO.
The present invention has following beneficial effect:
(1), in OLED, transparent negative photoresist is used to make insulating barrier and insulated column.Because transparent negative photoresist transmitance is more than 90%, thus viewing area all-transparent can be realized.
(2) incorporate existing oled light carving technology, order first two photoresist technique for applying only just can be realized by a kind of photoresist, decrease and get the raw materials ready, provide cost savings, improve production efficiency;
(3) transparent negative photoresist is being used to make in the process of insulating barrier and insulated column, by increasing the mode with baking temperature and post exposure bake temperatures, reduce electrode sticking photoresist and developer solution reflects speed, the development of temperature height is slow, insulating barrier is formed as trapezoid or square, existing technique transparent photomask glue can be solved and make insulating barrier and cause line direction cathode circuit cannot the problem of conducting.
Accompanying drawing explanation
Fig. 1 shows the board structure made under current oled light carving technology;
Fig. 2 shows the part-structure schematic diagram of OLED according to a preferred embodiment of the invention.
Embodiment
As shown in Figure 2, according to a preferred embodiment of the present invention, a kind of OLED is provided.This OLED comprises transparent glass substrate 22, in a plurality of transparent anode layers 21 be spaced on described glass substrate 22, to be distributed between described anode layer 21 and to be spaced the insulating barrier 24 on described glass substrate 22 in a plurality of, and in a plurality of and correspondence be laid on the insulated column 23 on described insulating barrier 24.The material of described insulating barrier 24 and insulated column 23 is transparent negative photoresist, and the cross sectional shape of the every bar of described insulating barrier 24 is trapezoid or square.
Preferably, described transparent negative photoresist is light EOC170 forever.
Whether the middle part of the side of described trapezoid and the angle of top are 90 degree-120 is spent, preferably 120 degree.
OLED described above also comprises and is laid in described anode layer 21 and organic luminous layer between described insulating barrier 24 and between described insulated column 23, the encapsulation cover plate that is laid in the cathode layer on described organic luminous layer and described insulated column and is positioned on described cathode layer.The material of described cathode layer and encapsulated layer is transparent material.Cathode layer selects magnesium silver alloy, and anode material is common tin indium oxide (ITO).
The thickness of described glass substrate is 0.5-0.7mm, and the thickness of anode layer is 150nm, and the thickness of insulating barrier is 1.5um, and the thickness of insulated column is 3.2-3.9um.Such as, the thickness of described glass substrate is 0.5mm, and the thickness of anode layer is 150nm, and the thickness of insulating barrier is 1.5um, and the thickness of insulated column is 3.2um.
And for example, the thickness of described glass substrate is 0.5mm, and the thickness of anode layer is 150nm, and the thickness of insulating barrier is 1.5um, and the thickness of insulated column is 3.9um.
And for example, the thickness of described glass substrate is 0.7mm, and the thickness of anode layer is 150nm, and the thickness of insulating barrier is 1.5um, and the thickness of insulated column is 3.2um.
And for example, the thickness of described glass substrate is 0.7mm, and the thickness of anode layer is 150nm, and the thickness of insulating barrier is 1.5um, and the thickness of insulated column is 3.9um.
And for example, the thickness of described glass substrate is 0.6mm, and the thickness of anode layer is 150nm, and the thickness of insulating barrier is 1.5um, and the thickness of insulated column is 3.6um.
In embodiments of the invention, not exhaustive all making steps, because such as, not by enumerate clean again, the step such as vacuum evaporation is the step that this area makes OLED and must possess, those skilled in the art also should know its process sequence, material and relative dimensions parameter, and its manufacture craft is the technological means that this area is commonly used.
According to a further aspect in the invention, provide the manufacture method of a kind of OLED, comprise the steps:
(1) transparent glass substrate is provided;
(2) the transparent anode layer formed on described glass substrate, described anode layer is that a plurality of are spaced;
(3) on described glass substrate, be coated with transparent negative photoresist make insulating barrier, described insulating barrier to be distributed between described anode layer and to be spaced in a plurality of, and the cross sectional shape of the every bar of described insulating barrier is trapezoid or square;
(4) on described insulating barrier, be coated with negative photoresist make insulated column.
Wherein step (3) comprising:
A) under 110 ~ 125 degrees Celsius, carry out preliminary drying to transparent negative photoresist, preliminary drying time is 125 ~ 140 seconds;
B) expose transparent negative photoresist, exposure is 30 ~ 50mj/com;
C) toast transparent negative photoresist, the time is 150 ~ 250 seconds, and temperature is 115 degrees Celsius ~ 120 degrees Celsius;
D) transparent negative photoresist is developed, developing time 1 ~ 2 minute;
E) to transparent negative photoresist under 220 ~ 250 degrees celsius, solidify 500 ~ 600 seconds.
Preferably, in step 2, plate layer of transparent conducting film again cleaning up on anode layer, form double-layer transparent conductive film.
In one embodiment, the concrete steps of step (3) are as follows:
A) carry out preliminary drying to transparent negative photoresist at one hundred and twenty degrees centigrade, preliminary drying time is 140 seconds;
B) expose transparent negative photoresist, exposure is 50mj/com;
C) toast transparent negative photoresist, the time is 250 seconds, and temperature is 120 degrees Celsius;
D) use TAMH to develop, the concentration of developer solution is 2.38%, developing time 2 minutes;
E) under 250 degrees celsius, solidification in 600 seconds is carried out.
OLED also comprises organic luminous layer, cathode layer and encapsulation cover plate.Described organic luminous layer, cathode layer and encapsulation cover plate are the known technology of those skilled in the art, do not repeat them here.
The present invention utilizes transparent negative photoresist to make insulating barrier, can realize the all-transparent display of OLED.Only just can realize insulating barrier and insulated column by a kind of photoresist, decrease and get the raw materials ready, provide cost savings, improve production efficiency.Simultaneously, by technique adjustment, formation trapezoid or foursquare insulating barrier, reduce electrode sticking photoresist and developer solution reflects speed, the development of temperature height is slow, can solve existing technique transparent photomask glue and make insulating barrier and cause line direction cathode circuit cannot the problem of conducting.
Aforementioned embodiments and advantage are only exemplary, can not be interpreted as and limit the invention.This instruction easily can be applied to the display unit of other types.This specification be intended to illustrate and and the scope of unrestricted claim.Many alternatives, variants and modifications it will be apparent to those skilled in the art that.Can combine the feature of illustrative embodiments described herein, structure, method and other characteristics by various ways, to obtain illustrative embodiments that is additional and/or alternative.
Claims (10)
1. an OLED, it comprises transparent glass substrate, in a plurality of transparent anode layers be spaced on described glass substrate, to be distributed between described anode layer and to be spaced the insulating barrier on described glass substrate in a plurality of, and in a plurality of and correspondence is laid on the insulated column on described insulating barrier; It is characterized in that, the material of described insulating barrier and insulated column is transparent negative photoresist, and the cross sectional shape of the every bar of described insulating barrier is trapezoid or square.
2. OLED according to claim 2, is characterized in that, when the cross sectional shape of the every bar of described insulating barrier is trapezoid, the angle of the trapezoid middle part of the side and top is 90 degree-120 and spends.
3. OLED according to claim 3, it is characterized in that, described OLED also comprises and is laid in described anode layer and organic luminous layer between described insulating barrier and between described insulated column, the encapsulation cover plate that is laid in the cathode layer on described organic luminous layer and described insulated column and is positioned on described cathode layer, and the material of described cathode layer and encapsulated layer is transparent material.
4. OLED according to claim 1, is characterized in that, described anode layer is ITO layer, and described cathode layer materials is magnesium silver alloy.
5. OLED according to claim 1, is characterized in that, the thickness of described insulating barrier is 1.5um.
6. OLED according to claim 1, is characterized in that, the thickness of described glass substrate is 0.5-0.7mm, and the thickness of anode layer is 150nm, and the thickness of insulated column is 3.2-3.9um.
7. a manufacture method for OLED, is characterized in that, comprises the steps:
(1) transparent glass substrate is provided;
(2) the transparent anode layer formed on described glass substrate, described anode layer is that a plurality of are spaced;
(3) on described glass substrate, be coated with transparent negative photoresist make insulating barrier, described insulating barrier to be distributed between described anode layer and to be spaced in a plurality of, and the cross sectional shape of the every bar of described insulating barrier is trapezoid or square;
(4) on described insulating barrier, be coated with negative photoresist make insulated column.
8. the manufacture method of OLED according to claim 7, is characterized in that, in described step (3), the making of insulating barrier comprises the steps:
Under 110 ~ 125 degrees Celsius, carry out preliminary drying to transparent negative photoresist, preliminary drying time is 125 ~ 140 seconds;
Expose transparent negative photoresist, exposure is 30 ~ 50mj/com;
Toast transparent negative photoresist, the time is 150 ~ 250 seconds, and temperature is 115 degrees Celsius ~ 120 degrees Celsius;
Transparent negative photoresist is developed, developing time 1 ~ 2 minute;
To transparent negative photoresist under 220 ~ 250 degrees celsius, solidify 500 ~ 600 seconds.
9. manufacture method according to claim 7, is characterized in that, described step (2) is also included in clean up on anode layer plates layer of transparent conducting film again, forms double-layer transparent conductive film.
10. manufacture method according to claim 9, is characterized in that, the material of described double-layer transparent conductive film is Mo/Al/Mo or ITO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510015773.1A CN104600206A (en) | 2015-01-13 | 2015-01-13 | OLED device and method for manufacturing OLED device |
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| CN201510015773.1A CN104600206A (en) | 2015-01-13 | 2015-01-13 | OLED device and method for manufacturing OLED device |
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| CN201510015773.1A Pending CN104600206A (en) | 2015-01-13 | 2015-01-13 | OLED device and method for manufacturing OLED device |
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| CN105118846A (en) * | 2015-07-28 | 2015-12-02 | Tcl集团股份有限公司 | Printed type light-emitting diode display device and manufacturing method thereof |
| CN106024982A (en) * | 2016-07-11 | 2016-10-12 | 中国科学院上海技术物理研究所 | Preparation method for indium column of infrared focal plane chip |
| CN106601768A (en) * | 2016-12-22 | 2017-04-26 | Tcl集团股份有限公司 | Transparent display device and preparation method therefor |
| CN107658391A (en) * | 2017-09-01 | 2018-02-02 | 信利半导体有限公司 | A kind of method for packing of narrow frame PMOLED devices |
| CN107910292A (en) * | 2017-11-14 | 2018-04-13 | 京东方科技集团股份有限公司 | The preparation method of cathode isolation barricade, display panel and preparation method thereof |
| CN108305891A (en) * | 2018-02-12 | 2018-07-20 | 上海天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
| CN108539055A (en) * | 2018-04-19 | 2018-09-14 | 信利半导体有限公司 | A kind of production method and OLED products of OLED products |
| CN109192759A (en) * | 2018-08-29 | 2019-01-11 | 京东方科技集团股份有限公司 | The preparation method of display panel and display panel |
| CN109461834A (en) * | 2018-09-19 | 2019-03-12 | 云谷（固安）科技有限公司 | Light-emitting display device and preparation method thereof, electronic equipment |
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| CN109192759B (en) * | 2018-08-29 | 2021-09-21 | 京东方科技集团股份有限公司 | Display panel and preparation method thereof |
| CN109461834A (en) * | 2018-09-19 | 2019-03-12 | 云谷（固安）科技有限公司 | Light-emitting display device and preparation method thereof, electronic equipment |
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Application publication date: 20150506 |