CN104600146A - Double-sided thin-film solar cell - Google Patents
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- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 13
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052714 tellurium Inorganic materials 0.000 claims abstract 6
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract 6
- 239000011669 selenium Substances 0.000 claims description 9
- 239000011777 magnesium Substances 0.000 claims description 6
- 229910052711 selenium Inorganic materials 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000010408 film Substances 0.000 claims 7
- 239000012528 membrane Substances 0.000 claims 5
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 3
- 229910052749 magnesium Inorganic materials 0.000 claims 3
- 239000011248 coating agent Substances 0.000 claims 2
- 238000000576 coating method Methods 0.000 claims 2
- 238000010521 absorption reaction Methods 0.000 abstract description 12
- WZGKIRHYWDCEKP-UHFFFAOYSA-N cadmium magnesium Chemical compound [Mg].[Cd] WZGKIRHYWDCEKP-UHFFFAOYSA-N 0.000 abstract description 10
- 230000005855 radiation Effects 0.000 abstract description 9
- 239000000463 material Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 6
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 abstract description 5
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000001228 spectrum Methods 0.000 abstract description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 11
- 238000006243 chemical reaction Methods 0.000 description 6
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 4
- 239000006096 absorbing agent Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- ZTBJFXYWWZPTFM-UHFFFAOYSA-N tellanylidenemagnesium Chemical compound [Te]=[Mg] ZTBJFXYWWZPTFM-UHFFFAOYSA-N 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 1
- 229910017680 MgTe Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/161—Photovoltaic cells having only PN heterojunction potential barriers comprising multiple PN heterojunctions, e.g. tandem cells
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
Description
技术领域 technical field
本发明涉及双面薄膜太阳能电池，具体是指碲镁镉和铜铟镓硒双面太阳能电池。 The invention relates to a double-sided thin-film solar cell, in particular to a double-sided solar cell of cadmium telluride and copper indium gallium selenide.
背景技术 Background technique
太阳能电池的推广和应用要考虑其转换效率和生产成本因素，目前太阳能电池界正寻求新的材料和电池结构来提高转换效率和降低成本。 The promotion and application of solar cells should consider its conversion efficiency and production cost factors. At present, the solar cell industry is seeking new materials and cell structures to improve conversion efficiency and reduce costs.
太阳能电池市场上主流的是晶体硅太阳能电池和薄膜太阳能电池，两者各具优劣，晶体硅太阳能电池工艺成熟，光电转换效率相对较高，但材料消耗和电池成本很高；薄膜太阳能电池制备在廉价的衬底上，材料消耗和电池成本很低，但光电转化效率还有待提高。 The mainstream in the solar cell market is crystalline silicon solar cells and thin-film solar cells, both of which have their own advantages and disadvantages. Crystalline silicon solar cells have mature technology and relatively high photoelectric conversion efficiency, but the material consumption and battery cost are high; the preparation of thin-film solar cells On cheap substrates, material consumption and cell cost are low, but the photoelectric conversion efficiency has yet to be improved.
为了更大限度地利用太阳辐射能，提高太阳能电池转换效率的同时降低生产成本，可以在廉价衬底上制备叠层薄膜太阳能电池，即在衬底上首先制备底电池，在底电池上沉积隧道结后再制备顶电池，太阳光首先进入宽带隙的子电池并被选择性吸收相对短波长的高能太阳辐射能，经过透明衬底后进入窄带隙的子电池并被选择性吸收相对长波长的低能太阳辐射能，Coutts等人认为顶电池和底电池最佳禁带宽度分别为1.6～1.8eV和1.0～1.1eV。不过叠层太阳能电池两个子电池之间晶格和光生电流较难匹配，而且需要制备隧道结，可能出现稳定性问题。 In order to maximize the use of solar radiation energy, improve the conversion efficiency of solar cells and reduce production costs, stacked thin-film solar cells can be prepared on cheap substrates, that is, the bottom cell is first prepared on the substrate, and the tunnel is deposited on the bottom cell. After the junction, the top cell is prepared. The sunlight first enters the wide-bandgap sub-cell and is selectively absorbed by relatively short-wavelength high-energy solar radiation. After passing through the transparent substrate, it enters the narrow-bandgap sub-cell and is selectively absorbed by relatively long-wavelength solar radiation. Low-energy solar radiation energy, Coutts et al. think that the optimal band gaps of the top cell and the bottom cell are 1.6-1.8eV and 1.0-1.1eV, respectively. However, it is difficult to match the lattice and photogenerated current between the two sub-cells of the tandem solar cell, and it is necessary to prepare a tunnel junction, which may cause stability problems.
双面太阳能电池将两个禁带宽度不同的子电池制备在透明衬底的两面，让短波长的光被宽带隙的子电池吸收、长波长的光被窄带隙的子电池吸收，其效果同样是提高了低成本薄膜太阳能电池的光电转换效率。 Double-sided solar cells prepare two sub-cells with different bandgap widths on both sides of the transparent substrate, so that short-wavelength light is absorbed by the wide-bandgap sub-cell and long-wavelength light is absorbed by the narrow-bandgap sub-cell, and the effect is the same. It is to improve the photoelectric conversion efficiency of low-cost thin-film solar cells.
碲镁镉（Cd1-x MgxTe）是三元化合物半导体材料，MgTe和CdTe的晶格常数失配低至0.7％，相容性好，随着组分x从0到1变化碲镁镉的禁带宽度从1.45eV到3.5eV变化，当x=0.08时Cd0.92 Mg0.08Te的禁带宽度接近1.6eV。 Cadmium Magnesium Telluride (Cd 1-x Mg x Te) is a ternary compound semiconductor material. The lattice constant mismatch between MgTe and CdTe is as low as 0.7%, and the compatibility is good. As the composition x changes from 0 to 1, Magnesium Telluride The bandgap of cadmium varies from 1.45eV to 3.5eV, and the bandgap of Cd 0.92 Mg 0.08 Te is close to 1.6eV when x=0.08.
铜铟镓硒（CuIn1-xGaxSe2）是四元化合物半导体材料，随着组分x从0到1变化其禁带宽度从1.04eV到1.69eV变化，当x=0.13时CuIn0.87Ga0.13Se2的禁带宽度接近1.1eV。铜铟镓硒是直接带隙半导体材料，其可见光波段的吸收系数高达105cm-1数量级，铜铟镓硒薄膜太阳能电池抗辐射能力强，稳定性好，不会出现光致衰减即S-W效应，弱光特性也好。 Copper indium gallium selenide (CuIn 1-x Ga x Se 2 ) is a quaternary compound semiconductor material. As the composition x changes from 0 to 1, its forbidden band width changes from 1.04eV to 1.69eV. When x=0.13, CuIn 0.87 The band gap of Ga 0.13 Se 2 is close to 1.1eV. Copper indium gallium selenide is a direct bandgap semiconductor material. Its absorption coefficient in the visible light band is as high as 105cm -1 . The copper indium gallium selenide thin film solar cell has strong radiation resistance and good stability. Light characteristics are also good.
发明内容 Contents of the invention
本发明提出一种在廉价的透明衬底两面分别制备碲镁镉和铜铟镓硒薄膜太阳能电池，构成一种碲镁镉/铜铟镓硒双面太阳能电池。 The invention proposes a kind of cadmium telluride magnesium tellurium and copper indium gallium selenium thin film solar cell respectively prepared on both sides of a cheap transparent substrate to form a kind of cadmium magnesium telluride/copper indium gallium selenide double-sided solar cell.
本发明的双面太阳能电池包括：透明衬底，在透明衬底受光面上制备选择性吸收短波长高能量太阳辐射能的碲镁镉顶子电池、在透明衬底背光面制备选择性吸收长波长低能量太阳辐射能的铜铟镓硒底子电池。 The double-sided solar cell of the present invention includes: a transparent substrate, a cadmium telluride top subcell selectively absorbing short-wavelength high-energy solar radiation energy is prepared on the light-receiving surface of the transparent substrate, and a selective absorption long-term solar cell is prepared on the backlight surface of the transparent substrate. Copper indium gallium selenide base cell for low energy solar radiation at wavelength.
所述的碲镁镉顶子电池，由在廉价透明衬底受光面上依次沉积的第一透明导电层、p型碲镁镉吸收层、n型硫化镉缓冲层和透明导电窗口层构成。 The cadmium magnesium telluride top subcell is composed of a first transparent conductive layer, a p-type cadmium magnesium telluride absorption layer, an n-type cadmium sulfide buffer layer and a transparent conductive window layer deposited sequentially on the light-receiving surface of an inexpensive transparent substrate.
所述铜铟镓硒底子电池，由在廉价透明衬底背光面上依次沉积的n型硫化镉缓冲层、p型铜铟镓硒吸收层、第二透明导电层和Ag反射层构成。 The copper indium gallium selenide sub-cell is composed of an n-type cadmium sulfide buffer layer, a p-type copper indium gallium selenide absorption layer, a second transparent conductive layer and an Ag reflective layer deposited sequentially on the backlight surface of an inexpensive transparent substrate.
所述透明衬底为刚性透明玻璃、柔性透明聚酰亚胺、柔性透明塑料中的任一种。 The transparent substrate is any one of rigid transparent glass, flexible transparent polyimide, and flexible transparent plastic.
所述第一透明导电层和所述第二透明导电层为ITO、AZO、FTO中的一种。 The first transparent conductive layer and the second transparent conductive layer are one of ITO, AZO and FTO.
本发明由两种不同禁带宽度的材料制备在透明衬底的两面，不仅拓展了对太阳光谱的吸收范围，提高了对太阳辐射能的利用率，还解决了叠层太阳能电池的缺点，如晶格失配和光生电流不易匹配等。本发明没有采用隧道结，而是将两个子电池分别制备于透明衬底的两面，有利于简化工艺流程，降低太阳能电池的生产成本。 The present invention is prepared on both sides of the transparent substrate by two materials with different bandgap widths, which not only expands the absorption range of the solar spectrum, improves the utilization rate of solar radiation energy, but also solves the shortcomings of laminated solar cells, such as Lattice mismatch and photogenerated current are not easy to match. The present invention does not use a tunnel junction, but prepares two sub-cells on both sides of the transparent substrate respectively, which is beneficial to simplify the process flow and reduce the production cost of the solar cell.
下面结合附图对本发明作进一步说明。 The present invention will be further described below in conjunction with accompanying drawing.
附图说明 Description of drawings
图1为本发明碲镁镉/铜铟镓硒双面太阳能电池结构示意图。 FIG. 1 is a schematic structural diagram of a CdMgTe/CIGaSe bifacial solar cell according to the present invention.
附图标记说明：1-透明衬底，2-第一透明导电层，3-p型碲镁镉吸收层，4-n型硫化镉缓冲层，5-透明导电窗口层，6-n型硫化镉缓冲层、7-p型铜铟镓硒吸收层、8-第二透明导电层，9-Ag反射层。 Description of reference signs: 1-transparent substrate, 2-first transparent conductive layer, 3-p-type cadmium magnesium telluride absorber layer, 4-n-type cadmium sulfide buffer layer, 5-transparent conductive window layer, 6-n-type sulfide sulfide Cadmium buffer layer, 7-p-type copper indium gallium selenium absorption layer, 8-second transparent conductive layer, 9-Ag reflection layer.
具体实施方式 Detailed ways
以下结合实施例，对本发明上述的和另外的技术特征和优点作更详细的说明。 The above-mentioned and other technical features and advantages of the present invention will be described in more detail below in conjunction with the embodiments.
在透明衬底1的一面磁控溅射沉积厚度为500nm的第一透明导电层2，其中透明衬底1为刚性透明玻璃、柔性透明聚酰亚胺、柔性透明塑料中的任一种，第一透明导电层2为ITO、AZO、FTO中的一种。 On one side of the transparent substrate 1, magnetron sputtering deposits a first transparent conductive layer 2 with a thickness of 500nm, wherein the transparent substrate 1 is any one of rigid transparent glass, flexible transparent polyimide, and flexible transparent plastic. A transparent conductive layer 2 is one of ITO, AZO and FTO.
在第一透明导电层2上共蒸发Mg和CdTe形成1500nm左右的p型碲镁镉吸收层3，衬底温度为300～400℃。 Co-evaporate Mg and CdTe on the first transparent conductive layer 2 to form a p-type cadmium magnesium telluride absorption layer 3 with a thickness of about 1500 nm, and the substrate temperature is 300-400° C.
在p型碲镁镉吸收层3上采用化学水浴法沉积厚度为100nm的n型硫化镉缓冲层4。 An n-type cadmium sulfide buffer layer 4 with a thickness of 100 nm is deposited on the p-type cadmium magnesium telluride absorber layer 3 by using a chemical water bath method.
将沉积有第一透明导电层2、p型碲镁镉吸收层3和n型硫化镉缓冲层4的衬底放置在温度为380～400℃、压力为10mbar的通有CdCl2气体的Ar/O2环境中退火，形成碲镁镉/硫化镉异质结。 The substrate deposited with the first transparent conductive layer 2, the p-type cadmium telluride absorber layer 3 and the n-type cadmium sulfide buffer layer 4 is placed in an Ar/ Annealed in O 2 environment to form CdMgTe/CdS heterojunction.
在n型硫化镉缓冲层4上沉积厚度为50～100nm的透明导电窗口层5。 A transparent conductive window layer 5 with a thickness of 50-100 nm is deposited on the n-type cadmium sulfide buffer layer 4 .
在透明衬底1的另一面采用化学水浴法沉积厚度为100nm的n型硫化镉缓冲层6。 On the other side of the transparent substrate 1, an n-type cadmium sulfide buffer layer 6 with a thickness of 100 nm is deposited by a chemical water bath method.
在n型硫化镉缓冲层6上采用多元共蒸发法生长厚度为1000～2000nm的p型铜铟镓硒吸收层7，即以Cu、In、Ga、Se作蒸发源，蒸发时所挥发出来的元素沉积在加热的衬底上反应形成铜铟镓硒薄膜。共蒸发时第一步是在衬底温度350℃左右同时蒸发In、Ga和Se到衬底上，形成(InGa)2Se3化合物；第二步是在衬底温度550℃左右，同时蒸发Cu和Se形成微富Cu的铜铟镓硒薄膜；第三步是在衬底温度550℃左右，同时蒸发In、Ga和Se，形成富Ⅲ族元素的铜铟镓硒薄膜表面。 On the n-type cadmium sulfide buffer layer 6, a p-type copper indium gallium selenide absorption layer 7 with a thickness of 1000-2000 nm is grown by multi-component co-evaporation method, that is, Cu, In, Ga, Se are used as evaporation sources, and the volatilized gas is evaporated during evaporation. The elements are deposited on a heated substrate and react to form a CIGS thin film. The first step in co-evaporation is to simultaneously evaporate In, Ga and Se onto the substrate at a substrate temperature of about 350°C to form (InGa) 2 Se 3 compounds; the second step is to simultaneously evaporate Cu at a substrate temperature of about 550°C and Se to form a slightly Cu-rich copper indium gallium selenide thin film; the third step is to evaporate In, Ga and Se at a substrate temperature of about 550°C at the same time to form a copper indium gallium selenide thin film surface rich in group III elements.
在p型铜铟镓硒吸收层7上沉积厚度为50～100nm的第二透明导电层8。 A second transparent conductive layer 8 with a thickness of 50-100 nm is deposited on the p-type CIGS absorption layer 7 .
在第二透明导电层8上热蒸发100～300nm的Ag反射层9，构成碲镁镉/铜铟镓硒双面太阳能电池。 A 100-300nm Ag reflective layer 9 is thermally evaporated on the second transparent conductive layer 8 to form a double-sided solar cell.
以上所述的实施例仅仅是对本发明的优选实施方式进行描述，并非对本发明的范围进行限定，在不脱离本发明设计精神的前提下，本领域普通技术人员对本发明的技术方案作出的各种变形和改进，均应落入本发明权利要求书确定的保护范围内。 The above-mentioned embodiments are only descriptions of preferred implementations of the present invention, and are not intended to limit the scope of the present invention. Variations and improvements should fall within the scope of protection defined by the claims of the present invention.
Claims (5)
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN109273542A (en) * | 2018-10-12 | 2019-01-25 | 北京铂阳顶荣光伏科技有限公司 | Copper indium gallium selenide solar cell absorption layer, preparation method and solar cell |
| CN112038439A (en) * | 2020-09-11 | 2020-12-04 | 福州大学 | CZTSSe flexible double-sided solar cell and preparation method thereof |
| CN113410323A (en) * | 2021-04-27 | 2021-09-17 | 中国节能减排有限公司 | Flexible double-sided solar cell module and preparation method thereof |
| CN113921658A (en) * | 2021-10-20 | 2022-01-11 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of solar cell and solar cell |
| CN115411125A (en) * | 2022-08-01 | 2022-11-29 | 华为数字能源技术有限公司 | Thin-film solar cell and preparation method thereof, photovoltaic module and power generation equipment |
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