CN1045792C - Cleaning agent for semiconductor industry - Google Patents
Cleaning agent for semiconductor industry Download PDFInfo
- Publication number
- CN1045792C CN1045792C CN95112227A CN95112227A CN1045792C CN 1045792 C CN1045792 C CN 1045792C CN 95112227 A CN95112227 A CN 95112227A CN 95112227 A CN95112227 A CN 95112227A CN 1045792 C CN1045792 C CN 1045792C
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- China
- Prior art keywords
- cleaning
- ether
- deionized water
- cleaning agent
- rosin
- Prior art date
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- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 239000012459 cleaning agent Substances 0.000 title claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 27
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000001993 wax Substances 0.000 claims abstract description 22
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000003921 oil Substances 0.000 claims abstract description 20
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 claims abstract description 19
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000004140 cleaning Methods 0.000 claims abstract description 17
- 235000019832 sodium triphosphate Nutrition 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- -1 polyoxyethylene nonyl phenol Polymers 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 239000011734 sodium Substances 0.000 claims abstract description 14
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 14
- 239000008367 deionised water Substances 0.000 claims abstract description 10
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 10
- 239000002904 solvent Substances 0.000 claims abstract description 10
- RNMDNPCBIKJCQP-UHFFFAOYSA-N 5-nonyl-7-oxabicyclo[4.1.0]hepta-1,3,5-trien-2-ol Chemical compound C(CCCCCCCC)C1=C2C(=C(C=C1)O)O2 RNMDNPCBIKJCQP-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000003350 kerosene Substances 0.000 claims abstract description 8
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000012184 mineral wax Substances 0.000 claims description 12
- 101710194948 Protein phosphatase PhpP Proteins 0.000 claims description 8
- HWGNBUXHKFFFIH-UHFFFAOYSA-I pentasodium;[oxido(phosphonatooxy)phosphoryl] phosphate Chemical compound [Na+].[Na+].[Na+].[Na+].[Na+].[O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O HWGNBUXHKFFFIH-UHFFFAOYSA-I 0.000 claims description 8
- UNXRWKVEANCORM-UHFFFAOYSA-I triphosphate(5-) Chemical compound [O-]P([O-])(=O)OP([O-])(=O)OP([O-])([O-])=O UNXRWKVEANCORM-UHFFFAOYSA-I 0.000 claims description 8
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 7
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 7
- 150000003014 phosphoric acid esters Chemical class 0.000 claims description 5
- KGWDUNBJIMUFAP-KVVVOXFISA-N Ethanolamine Oleate Chemical compound NCCO.CCCCCCCC\C=C/CCCCCCCC(O)=O KGWDUNBJIMUFAP-KVVVOXFISA-N 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 2
- ONJQDTZCDSESIW-UHFFFAOYSA-N polidocanol Chemical compound CCCCCCCCCCCCOCCOCCOCCOCCOCCOCCOCCOCCOCCO ONJQDTZCDSESIW-UHFFFAOYSA-N 0.000 claims description 2
- 239000012188 paraffin wax Substances 0.000 abstract description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 abstract description 6
- 230000007797 corrosion Effects 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 238000003912 environmental pollution Methods 0.000 abstract description 2
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 abstract 2
- LQZZUXJYWNFBMV-UHFFFAOYSA-N dodecan-1-ol Chemical compound CCCCCCCCCCCCO LQZZUXJYWNFBMV-UHFFFAOYSA-N 0.000 abstract 2
- 229910019142 PO4 Inorganic materials 0.000 abstract 1
- 150000001408 amides Chemical class 0.000 abstract 1
- 231100000956 nontoxicity Toxicity 0.000 abstract 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 abstract 1
- 239000010452 phosphate Substances 0.000 abstract 1
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 33
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 19
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 12
- 239000007788 liquid Substances 0.000 description 11
- 229960004756 ethanol Drugs 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 231100000252 nontoxic Toxicity 0.000 description 8
- 230000003000 nontoxic effect Effects 0.000 description 8
- 231100000614 poison Toxicity 0.000 description 8
- 230000007096 poisonous effect Effects 0.000 description 8
- 239000003960 organic solvent Substances 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 6
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical compound ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 6
- 239000000460 chlorine Substances 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000000839 emulsion Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000002000 scavenging effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- GOZCEKPKECLKNO-RKQHYHRCSA-N Picein Chemical compound C1=CC(C(=O)C)=CC=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 GOZCEKPKECLKNO-RKQHYHRCSA-N 0.000 description 2
- 239000013543 active substance Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001473 noxious effect Effects 0.000 description 2
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 1
- 206010009866 Cold sweat Diseases 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 241000779819 Syncarpia glomulifera Species 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 229960001701 chloroform Drugs 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229960000935 dehydrated alcohol Drugs 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000004945 emulsification Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000009972 noncorrosive effect Effects 0.000 description 1
- 230000009965 odorless effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000011301 petroleum pitch Substances 0.000 description 1
- 239000001739 pinus spp. Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229940036248 turpentine Drugs 0.000 description 1
Landscapes
- Detergent Compositions (AREA)
Abstract
The present invention relates to a cleaning agent for cleaning a mixture of black wax, rosin and paraffin on the surface of a semiconductor silicon chip. The cleaning agent is composed of 3 to 5 wt% of polyoxyethylene nonyl phenol ether, 4 to 6 wt% of fatty alcoholtopolyoxyethylene ether, 3 to 5 wt% of N, N-dihydroxyethyl tridecatoamide or sodium dodecyl alcohol amide phosphate, 2 to 4 wt% of sodium tripolyphosphate, 0 to 5 wt% of isopropyl alcohol or ethanolamine, 0 to 10 wt% of ethanol, 0 to 85 wt% of solvent oil or kerosene and deionized water as the rest. The cleaning agent of the present invention has the advantages of no toxicity, no corrosion, no environmental pollution and lowered cleaning cost.
Description
The present invention relates to a kind of clean-out system that cleans black wax, rosin and mineral wax mixture on the semi-conductor silicon chip surface, belong to the cleaning agent for semiconductor industry technical field.
In the semiconducter device production process, black wax is mainly used in the protection before power electronic devices angle laps such as silicon controlled rectifier, power rectifier diode, the corrosion; And rosin and mineral wax mixture are mainly used in the silicon chip abrasive disc and polishing process is anterodorsal bonding, as tackiness agent.Black wax claims black glue, picein wax again, is the petroleum pitch goods, belongs to special asphalt.Almost all be made up of multinuclear (more than three rings) aromatics, its cohesiveness, water resisting property and non-corrosibility are good.Can dissolve each other with organic solvents such as toluene, trieline, methylene dichloride.Rosin, little Huang is to the red-brown amorphous solid.Matter is crisp transparent in the room temperature, and the surface is glossy slightly, and chance heat then deliquescing is clamminess, and has peat-reek.Main component is resin acid (C
19H
19COOH).Water insoluble, can be dissolved in ethanol, ether, acetone, benzene, toluene, ethylene dichloride, turpentine wet goods organic solvent.Paraffin is the solid crystal product that extract from oil, colorless and odorless.Water insoluble, the solubleness in alcohol and ketone is very low, is soluble in organic solvents such as tetracol phenixin, trichloromethane, ether, benzene, toluene, sherwood oil.Be used for the acquisition of the monocrystalline silicon piece of semiconducter device production, generally all must be through cutting, abrasive disc, three steps of polishing.Be used to the mechanical means of cutting, grind, throwing, all scribble various greases.And for fixing silicon chip, need use various tackiness agents, as rosin, paraffin or the mixture of the two, silicon chip is sticked on the pressing plate.Therefore, the semi-conductor silicon chip top priority of cleaning is exactly the rosin, paraffin on cleaning silicon chip surface and composition thereof.In the semiconducter device production process, generally use organic solvent dissolution black wax, rosin, paraffin and composition thereof such as toluene, trieline or methylene dichloride, do transition with acetone then and clean, remove the acetone that attaches on silicon chip with dehydrated alcohol at last.Because not only cost is higher for organic solvents such as toluene, and toxicity is very big, harm operator's safety and healthy, contaminate environment.Some unit nontoxic turps on probation cleans black wax, obtains certain effect.But because turps has special odor, belongs to easy volatile liquid, it is to the cleaning efficiency of the black wax cleaning efficiency height not as toluene in addition, and turps is finally failed to substitute noxious solvent such as toluene and cleaned black wax.Also some unit sherwood oil on probation cleans black wax.But,, be difficult for cleaning black wax all the better with sherwood oil along with the volatilization of sherwood oil is separated out lysed black wax again on silicon chip because sherwood oil volatilizees easily.The flash-point of sherwood oil is-22 ℃, catches fire with very easy the causing of sherwood oil, so generally do not re-use now.For many years, some scientists just are devoted to study a kind of nontoxic novel detergent both at home and abroad, to replace noxious solvents such as toluene, trieline and methylene dichloride, are used for the rosin, paraffin on cleaning silicon chip surface and composition thereof.But not seeing as yet up to now has correlation technique openly.
The objective of the invention is to overcome the shortcoming of prior art, the efficient cleaner of a kind of nontoxic non-corrosive cleaning black wax, rosin and mineral wax mixture is provided.
Clean-out system of the present invention basic composition is:
Weight percentages of components
A, polyoxyethylene nonylphenol ether 3-5%
B, fatty alcohol-polyoxyethylene ether 4-6%
C, N, N ' dihydroxy ethyl tridecanoyl amine or 3-5%
Dodecanolyacylamine phosphoric acid ester sodium
D, tripoly phosphate sodium STPP 2-4%
E, Virahol or thanomin 0-5%
F, ethanol 0-10%
G, solvent oil or kerosene 0-85%
H, deionized water surplus
In raw materials used, polyoxyethylene nonylphenol ether and fatty alcohol-polyoxyethylene ether are colourless transparent oil liquid, N, N ' dihydroxy ethyl tridecanoyl amine and dodecanolyacylamine phosphoric acid ester sodium are the yellowish brown transparent oily liquid, these tensio-active agents are water-soluble fully, do not fire, not quick-fried, readily biodegradable is the main component of clean-out system.The auxiliary agent tripoly phosphate sodium STPP is a most important inorganic assistant agent in the cleaning agent formula, and product shows white particle or Powdered is water-soluble.Tripoly phosphate sodium STPP itself has the general characteristic of tensio-active agent, and solid particulate is had very strong dispersion force and suspending power, also has the effect of emulsification and stable emulsion, aspect the removal grease good effect being arranged, can prevent soil redeposition, improves and cleans detersive power.Described solvent oil is good with No. 200 solvent oils, and the same mixture to black wax, rosin and paraffin with kerosene of this solvent oil has very strong dissolving power.
With above-mentioned raw materials heating for dissolving under 50 ℃ of temperature, carry out compositely, can be mixed with uniform liquid, can mix with arbitrary proportion with water, and nontoxic, non-corrosiveness, free from environmental pollution, its main economic and technical norms are as follows:
(1) can replace toluene, dimethylbenzene, trieline, methylene dichloride and other deleterious
Deposit machine solvent cleaning black wax, rosin and mineral wax mixture, and have nontoxic, nothing
Corrosive advantage, nonflammable; The chemistry that does not contain haloid elements such as fluorine, chlorine
Material can not damage the high-altitude ozonosphere;
(2) electrical parameter of semiconducter device and unicircuit with the cleaning of above organic solvent
Electrical parameter is suitable;
(3) pH value 8.5-9.5 (25 ℃)
(4) metal ion content＜10ppm
(5) stability :-10 ℃ of-+50 ℃ of stable performances;
(6) storage period: indoor storage 2 years, characteristic is constant;
(7) the cleaning cost is not higher than the cost that above organic solvent cleans.
When scribbling the silicon chip of black wax, rosin and mineral wax mixture with this clean-out system clean surface, should directly use stoste, clean (this stoste can be repeatedly used) with Ultrasonic Cleaners, use deionized water rinsing then.
When speckling with the silicon chip of a small amount of black wax, rosin and mineral wax mixture with this clean-out system clean surface, available 5～10% ratio and deionized water are hybridly prepared into emulsion, with Ultrasonic Cleaners clean or boil with electric furnace, use deionized water rinsing then.
The invention will be further described below in conjunction with embodiment.100 kilograms of embodiment 1. clean-out systems
Weight percentages of components
4 kilogram 4% of A, polyoxyethylene nonylphenol ether TX-7
(synthetic chemistry factory in Beijing produces colourless transparent oil liquid)
5 kilogram 5% of B, fatty alcohol-polyoxyethylene ether AEO-3
(synthetic chemistry factory in Beijing produces colourless transparent oil liquid)
C, N, 3 kilogram 3% of N ' dihydroxy ethyl tridecanoyl amine
(synthetic chemistry factory in Beijing produces the yellowish brown transparent oily liquid)
3 kilogram 3% of D, tripoly phosphate sodium STPP (analytical pure)
85 kilogram 85% of G, kerosene (common illuminating kerosene)
Above-mentioned clean-out system proportion is about 0.85, and kinetic viscosity is 4 centipoises, outward appearance light brown transparent liquid.Clean with Ultrasonic Cleaners, can clean black wax, rosin and mineral wax mixture effectively.Embodiment 2. is as described in the embodiment 1, and different is component G is No. 200 solvent oils and kerosene is by the mixed mixture of arbitrary proportion.Embodiment 3. is as described in the embodiment 1, and different is that component C is a dodecanolyacylamine phosphoric acid ester sodium.Its cleaning black wax, rosin and mineral wax mixture and prior art effect comparison are as follows:
Scavenging solution characteristics effect with the present invention after cost reduce toluene, acetone, ethanol is inflammable, poisonous 35% dimethylbenzene that meets the requirements, acetone, ethanol is inflammable, poisonous 35% trieline that meets the requirements is poisonous, chloride 50% methylene dichloride that meets the requirements, acetone, ethanol is poisonous, chloride 40% embodiment of the invention 3 that meets the requirements is nontoxic, meet the requirements 100 kilograms of 0% embodiment, 4. clean-out systems of no chlorine
Weight percentages of components
5 kilogram 5% of A, polyoxyethylene nonylphenol ether TX-7
(synthetic chemistry factory in Beijing produces colourless transparent oil liquid)
4 kilogram 4% of B, fatty alcohol-polyoxyethylene ether AEO-9
(synthetic chemistry factory in Beijing produces colourless transparent oil liquid)
C, N, 6 kilogram 6% of N ' dihydroxy ethyl tridecanoyl amine
(synthetic chemistry factory in Beijing produces the yellowish brown transparent oily liquid)
3 kilogram 3% of D, tripoly phosphate sodium STPP (analytical pure)
5 kilogram 5% of E, Virahol (analytical pure)
10 kilogram 10% of F, 95% ethanol (analytical pure)
67 kilogram 67% of H, deionized water
Above-mentioned raw materials is dissolved at 50-70 ℃ of temperature range internal heating, carry out composite, through static froth breaking, precipitating extraction, press filtration, sterilization, concentrate, can be mixed with evenly emulsion of proportion is about 1.02, kinetic viscosity is 60 centipoises white, can mix with arbitrary proportion with water.This clean-out system can clean rosin and mineral wax mixture effectively, and cost is lower than embodiment 1,2,3, but the effect of cleaning black wax is not as embodiment 1,2,3.During use and deionized water be hybridly prepared into 5% scavenging solution, cleaning with Ultrasonic Cleaners more than 60 ℃ or boiling with electric furnace.Embodiment 5. is as described in the embodiment 4, and different is that component E is a thanomin.
The embodiment of the invention 5 is cleaned rosin and mineral wax mixture and prior art effect comparison
Scavenging solution characteristics effect with the present invention after cost reduce toluene, acetone, ethanol is inflammable, poisonous 50% dimethylbenzene that meets the requirements, acetone, ethanol is inflammable, poisonous 50% trieline that meets the requirements is poisonous, chlorine 70% methylene dichloride that meets the requirements is arranged, acetone, ethanol is poisonous, there is chlorine 55% embodiment of the invention 5 that meets the requirements nontoxic, no chlorine meets the requirements 0%
More than be good with embodiment 3 and embodiment 5.
Semiconductor industry of the present invention cleans the nontoxic non-corrosiveness of clean-out system of black wax, rosin and mineral wax mixture, does not belong to inflammable substance, but it is flammable press the clean-out system chance naked light of embodiment 1,2,3 preparations.This clean-out system has satisfactory stability, but long-term storage.
Claims (4)
1. a cleaning agent for semiconductor industry composition is characterized in that, basic composition is:
Weight percentages of components
A, polyoxyethylene nonylphenol ether 3-5%
B, fatty alcohol-polyoxyethylene ether 4-6%
C, N, N ' dihydroxy ethyl tridecanoyl amine or 3-5%
Dodecanolyacylamine phosphoric acid ester sodium
D, tripoly phosphate sodium STPP 2-4%
E, Virahol or thanomin 0-5%
F, ethanol 0-10%
G, solvent oil or kerosene 0-85%
H, deionized water surplus.
2. cleansing composition as claimed in claim 1 is characterized in that, consists of:
Weight percentages of components
A, polyoxyethylene nonylphenol ether TX-7 4%
B, fatty alcohol-polyoxyethylene ether AEO-3 5%
C, dodecanolyacylamine phosphoric acid ester sodium 3%
D, tripoly phosphate sodium STPP 3%
G, kerosene 85%.
3. cleansing composition as claimed in claim 1 is characterized in that, consists of:
Weight percentages of components
A, polyoxyethylene nonylphenol ether TX-7 5%
B, fatty alcohol-polyoxyethylene ether AEO-9 4%
C, N, N ' dihydroxy ethyl tridecanoyl amine 6%
D, tripoly phosphate sodium STPP 3%
E, thanomin 5%
F, 95% ethanol 10%
H, deionized water 67%.
4. a method of cleaning black wax, rosin and mineral wax mixture on the semi-conductor silicon chip surface comprises and uses claim 1 or 2 or 3 described cleansing compositions, boils with the Ultrasonic Cleaners cleaning or with electric furnace, uses deionized water rinsing then.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95112227A CN1045792C (en) | 1995-11-23 | 1995-11-23 | Cleaning agent for semiconductor industry |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN95112227A CN1045792C (en) | 1995-11-23 | 1995-11-23 | Cleaning agent for semiconductor industry |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1124285A CN1124285A (en) | 1996-06-12 |
| CN1045792C true CN1045792C (en) | 1999-10-20 |
Family
ID=5079418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN95112227A Expired - Fee Related CN1045792C (en) | 1995-11-23 | 1995-11-23 | Cleaning agent for semiconductor industry |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1045792C (en) |
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| CN102527662A (en) * | 2010-12-16 | 2012-07-04 | 湖北泰晶电子科技有限公司 | Method for cleaning quartz crystal elements |
| CN102051271B (en) * | 2011-01-24 | 2014-07-09 | 北京洛娃日化有限公司 | Dewaxing agent |
| CN102533470A (en) * | 2011-12-29 | 2012-07-04 | 镇江市港南电子有限公司 | Silicon wafer cleaning liquid |
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| CN102691069A (en) * | 2012-05-29 | 2012-09-26 | 王宝玉 | Dedicated cleaning agent for metal |
| CN103525573A (en) * | 2013-10-15 | 2014-01-22 | 上海尤希路化学工业有限公司 | Special cleaning solution for high-performance photovoltaic silicon chips |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1051756A (en) * | 1989-11-11 | 1991-05-29 | 孙启基 | A kind of water-base electron cleaning agent |
| CN1052138A (en) * | 1989-12-02 | 1991-06-12 | 山东大学 | A kind of clean-out system that is used for electronic industry and preparation method thereof |
| CN1095410A (en) * | 1989-10-26 | 1994-11-23 | 株式会社东芝 | detergent composition |
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1995
- 1995-11-23 CN CN95112227A patent/CN1045792C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1095410A (en) * | 1989-10-26 | 1994-11-23 | 株式会社东芝 | detergent composition |
| CN1051756A (en) * | 1989-11-11 | 1991-05-29 | 孙启基 | A kind of water-base electron cleaning agent |
| CN1052138A (en) * | 1989-12-02 | 1991-06-12 | 山东大学 | A kind of clean-out system that is used for electronic industry and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1124285A (en) | 1996-06-12 |
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