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CN104536231B - Electrochromic display device, its preparation method, cathode construction and micro- lattice array - Google Patents

Electrochromic display device, its preparation method, cathode construction and micro- lattice array Download PDF

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CN104536231B
CN104536231B CN201510023465.3A CN201510023465A CN104536231B CN 104536231 B CN104536231 B CN 104536231B CN 201510023465 A CN201510023465 A CN 201510023465A CN 104536231 B CN104536231 B CN 104536231B
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cathode film
microgrid
cathode
array
drawer
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CN104536231A (en
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渠路
李文波
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BOE Technology Group Co Ltd
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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153Constructional details
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/15Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on an electrochromic effect
    • G02F1/153Constructional details
    • G02F1/155Electrodes

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)

Abstract

本发明公开了一种电致变色显示器件、其制备方法、阴极结构及微格阵列,涉及电致变色技术,解决了现有电致变色显示器件中,阴极材料及阳极材料容易被密封材料污染,且在制备该器件时对位过程的工艺难度大等问题。本发明实施例中,由于微格阵列四周的外墙中有三面外墙的高度超出该微格阵列中微格的高度,形成了具有缺口的抽屉状导槽;又由于超出的高度与阴极薄膜的厚度相同,且抽屉状导槽的内部尺寸与具有阻挡条的阴极薄膜的外周尺寸匹配,因此可利用抽屉原理,用简单的方法保证阳极材料完全密封,简化了对位过程的工艺难度,且阻挡条及高出的三面外墙封住了阴极薄膜的侧边,避免了阴极、阳极材料被密封材料污染的问题。

The invention discloses an electrochromic display device, a preparation method thereof, a cathode structure and a microgrid array, relates to electrochromic technology, and solves the problem that the cathode material and the anode material are easily polluted by sealing materials in the existing electrochromic display device , and the difficulty of the alignment process during the preparation of the device. In the embodiment of the present invention, because the height of three outer walls in the outer walls around the microgrid array exceeds the height of the microgrid in the microgrid array, a drawer-shaped guide groove with a gap is formed; The same thickness, and the internal size of the drawer-shaped guide groove matches the outer peripheral size of the cathode film with barrier strips, so the drawer principle can be used to ensure that the anode material is completely sealed in a simple way, which simplifies the process difficulty of the alignment process, and The barrier strip and the raised three outer walls seal the sides of the cathode film, avoiding the contamination of the cathode and anode materials by the sealing material.

Description

电致变色显示器件、其制备方法、阴极结构及微格阵列Electrochromic display device, its preparation method, cathode structure and microgrid array

本申请是针对申请日为2011年5月23日,申请号为201110134847.5,发明名称为“电致变色显示器件、其制备方法、阴极结构及微格阵列”的中国专利申请提出的分案申请。This application is a divisional application for a Chinese patent application with an application date of May 23, 2011, an application number of 201110134847.5, and an invention title of "Electrochromic Display Device, Its Preparation Method, Cathode Structure, and Microgrid Array".

技术领域technical field

本发明涉及电致变色技术,尤其涉及电致变色显示器件、其制备方法、阴极结构及微格阵列。The invention relates to electrochromic technology, in particular to an electrochromic display device, a preparation method thereof, a cathode structure and a microgrid array.

背景技术Background technique

电致变色显示器件(Electro chromic Device,简称为ECD)广泛应用于便携式电子设备中,如个人数字处理器、电纸书等。它具有启动电压低、能耗少、开路后显示的图案可存储一定时间而不需要能耗、费用小、易于制造、对比度好、视角宽等优点。An electrochromic display device (Electrochromic Device, ECD for short) is widely used in portable electronic devices, such as personal digital processors, electronic paper books, and the like. It has the advantages of low starting voltage, low energy consumption, the pattern displayed after opening the circuit can be stored for a certain period of time without energy consumption, low cost, easy to manufacture, good contrast, and wide viewing angle.

现有电致变色显示器件的结构如图1所示,在具有第一ITO(氧化铟锡)薄膜12的第一基材11的该第一ITO薄膜12上形成有微格阵列13,每个微格内填充有阳极材料14,该阳极材料14包括电解质及能实现离子存储功能的材料。微格阵列13上依次覆盖有阴极薄膜15、第二ITO薄膜16及第二基材17,其中,阴极薄膜15为电致变色材料层。The structure of the existing electrochromic display device is shown in Figure 1, on this first ITO film 12 of the first base material 11 that has the first ITO (indium tin oxide) film 12, be formed with microgrid array 13, each The microcells are filled with anode material 14, which includes electrolyte and materials capable of realizing ion storage function. The microgrid array 13 is sequentially covered with a cathode film 15 , a second ITO film 16 and a second substrate 17 , wherein the cathode film 15 is an electrochromic material layer.

现有电致变色显示器件工作时,在两个ITO薄膜之间加上一定的电压,阴极薄膜15的电致变色材料在电压作用下发生氧化/还原反应,使其颜色发生变化或恢复初始颜色;而电解质由导电材料组成,用于提供氧化/还原反应所需的离子;能实现离子存储功能的材料在电致变色材料发生氧化还原反应时储存相应的反离子,使得整个体系保持电荷平衡。When the existing electrochromic display device is working, a certain voltage is applied between the two ITO films, and the electrochromic material of the cathode film 15 undergoes an oxidation/reduction reaction under the action of the voltage, causing the color to change or restore the original color. The electrolyte is composed of conductive materials to provide the ions required for the oxidation/reduction reaction; the material that can realize the ion storage function stores the corresponding counter ions when the electrochromic material undergoes a redox reaction, so that the entire system maintains charge balance.

制造图1所示的现有电致变色显示器件的方法包括如下步骤。The method for manufacturing the conventional electrochromic display device shown in FIG. 1 includes the following steps.

步骤1、制备阴极部分。在第二基材17上形成第二ITO薄膜16后,将阴极材料涂敷在第二ITO薄膜16上,然后烘干,形成阴极薄膜15。Step 1. Prepare the cathode part. After the second ITO film 16 is formed on the second substrate 17 , the cathode material is coated on the second ITO film 16 and then dried to form the cathode film 15 .

步骤2、制备阳极部分。在第一基材11上形成第一ITO薄膜12后,在第一ITO薄膜12上涂敷一层辐射固化材料,通过光掩膜版将其光照固化然后将未曝光的部分洗掉,得到微格阵列13,然后采用刮涂或者灌装的方式将阳极材料14灌入微格阵列13。微格阵列13外周尺寸与阴极薄膜15外周尺寸相同。Step 2, preparing the anode part. After forming the first ITO thin film 12 on the first base material 11, a layer of radiation curing material is coated on the first ITO thin film 12, it is light-cured through a photomask plate and then the unexposed part is washed away to obtain a microstructure. grid array 13, and then pour the anode material 14 into the micro grid array 13 by scraping or filling. The peripheral dimensions of the microgrid array 13 are the same as the peripheral dimensions of the cathode film 15 .

步骤3、贴合。使阴极薄膜15与微格阵列13对准后,将阴极部分与阳极部分对位、贴合形成盒状结构,阴极薄膜15覆盖在微格阵列13上。Step 3, fit. After the cathode film 15 is aligned with the microgrid array 13 , the cathode part and the anode part are aligned and bonded to form a box-like structure, and the cathode film 15 covers the microgrid array 13 .

步骤4、封装。在盒状结构周边涂覆密封材料,以将该盒状结构周边密封,使得阴极薄膜15及阳极材料14不外露。Step 4, encapsulation. A sealing material is coated on the periphery of the box-shaped structure to seal the periphery of the box-shaped structure so that the cathode film 15 and the anode material 14 are not exposed.

在制造上述电致变色显示器件的过程中,发明人发现现有技术中至少存在如下问题:在贴合步骤中,因为需要进行阴极薄膜与微杯阵列的精确对位,若对位不准,液态的阳极材料就会流出,导致产品的良率下降,使得对位过程具有较高的工艺难度;在封装步骤中,由于阴极薄膜的侧边从盒状结构的侧边露出,会直接与密封材料接触,因此会导致阴极材料被密封材料污染,且如果存在上述对位不准,会导致密封材料与露出的阳极材料接触,而污染阳极材料。In the process of manufacturing the above-mentioned electrochromic display device, the inventors found that there are at least the following problems in the prior art: in the bonding step, because the cathode film and the microcup array need to be accurately aligned, if the alignment is not accurate, The liquid anode material will flow out, resulting in a decrease in the yield of the product, making the alignment process more difficult; in the packaging step, since the side of the cathode film is exposed from the side of the box-shaped structure, it will directly contact with the sealing material contact, thus causing the cathode material to be contaminated by the sealing material, and if there is such an alignment misalignment, it will cause the sealing material to contact the exposed anode material, thereby contaminating the anode material.

发明内容Contents of the invention

本发明的实施例提供一种电致变色显示器件、其制备方法、阴极结构及微格阵列,可防止该器件的阴极材料及阳极材料被密封材料污染,并能在制备该器件时,降低对位过程的工艺难度。Embodiments of the present invention provide an electrochromic display device, its preparation method, cathode structure, and microgrid array, which can prevent the cathode material and anode material of the device from being polluted by sealing materials, and can reduce the impact on the device when manufacturing the device. The technological difficulty of the bit process.

为达到上述目的,本发明的实施例采用如下技术方案:In order to achieve the above object, embodiments of the present invention adopt the following technical solutions:

一种电致变色显示器件,包括:在第二导电基材上依次形成的微格阵列、阴极薄膜、第一导电基材及密封材料,所述微格阵列中每个微格内填充有阳极材料,所述密封材料用于密封所述阴极薄膜及所述阳极材料;所述阴极薄膜的至少一个侧边具有阻挡条,所述阻挡条在垂直于所述第一导电基材方向上的厚度与所述阴极薄膜的厚度相同;所述微格阵列四周的外墙中有三面外墙的高度超出所述微格的高度,以在所述微格上方形成具有缺口的抽屉状导槽,所述超出的高度与所述阴极薄膜的厚度相同,所述抽屉状导槽的内部尺寸与具有所述阻挡条的所述阴极薄膜的外周尺寸匹配,以使具有所述阻挡条的所述阴极薄膜嵌入所述抽屉状导槽中,且所述阻挡条对应于所述缺口的位置。An electrochromic display device, comprising: a microgrid array, a cathode film, a first conductive substrate and a sealing material sequentially formed on a second conductive substrate, each microgrid in the microgrid array is filled with an anode Material, the sealing material is used to seal the cathode film and the anode material; at least one side of the cathode film has a barrier strip, the thickness of the barrier strip in the direction perpendicular to the first conductive substrate The thickness of the cathode film is the same as that of the cathode film; there are three outer walls whose heights exceed the height of the microgrid in the outer walls around the microgrid array, so as to form a drawer-shaped guide groove with a gap above the microgrid, so The above-mentioned protruding height is the same as the thickness of the cathode film, and the inner size of the drawer-shaped guide groove matches the outer peripheral dimension of the cathode film with the barrier strip, so that the cathode film with the barrier strip embedded in the drawer-shaped guide groove, and the position of the blocking strip corresponds to the notch.

一种电致变色显示器件的制备方法,包括:在第一导电基材上形成阴极薄膜;在所述阴极薄膜的至少一个侧边形成阻挡条,所述阻挡条在垂直于所述第一导电基材方向上的厚度与所述阴极薄膜的厚度相同;在第二导电基材上形成微格阵列,所述微格阵列四周的外墙中有三面外墙的高度超出所述微格阵列中微格的高度,以在所述微格上方形成具有缺口的抽屉状导槽,所述超出的高度与所述阴极薄膜的厚度相同,所述抽屉状导槽的内部尺寸与具有所述阻挡条的所述阴极薄膜的外周尺寸匹配;在所述微格阵列的每个所述微格中填充阳极材料;使所述阴极薄膜的、与具有所述阻挡条的侧边相对的另一侧边对准所述抽屉状导槽的缺口,将所述阴极薄膜推入所述抽屉状导槽内,以使所述第一、二导电基材、所述阴极薄膜与所述微格阵列扣合成盒状结构;用密封材料封装所述盒状结构。A method for preparing an electrochromic display device, comprising: forming a cathode film on a first conductive substrate; forming a barrier strip on at least one side of the cathode film, and the barrier strip is perpendicular to the first conductive The thickness in the substrate direction is the same as the thickness of the cathode film; a microgrid array is formed on the second conductive substrate, and the height of three outer walls in the outer walls around the microgrid array exceeds that of the microgrid array. The height of the microgrid is to form a drawer-shaped guide groove with a gap above the microgrid, the height of the excess is the same as the thickness of the cathode film, and the internal size of the drawer-shaped guide groove is the same as that with the barrier strip The peripheral dimensions of the cathode film are matched; each of the microgrids of the microgrid array is filled with an anode material; the other side of the cathode film is opposite to the side with the barrier strip Aligning the notch of the drawer-shaped guide groove, pushing the cathode film into the drawer-shaped guide groove, so that the first and second conductive substrates, the cathode film and the microgrid array are snapped together A box-like structure; encapsulating said box-like structure with a sealing material.

一种电致变色显示器件的阴极结构,包括阴极薄膜,还包括阻挡条,所述阻挡条形成在所述阴极薄膜的至少一个侧边,且所述阻挡条在垂直于所述阴极薄膜的方向上的厚度与所述阴极薄膜的厚度相同。A cathode structure of an electrochromic display device, comprising a cathode film, and a barrier strip, the barrier strip is formed on at least one side of the cathode film, and the barrier strip is formed in a direction perpendicular to the cathode film The thickness above is the same as that of the cathode film.

一种电致变色显示器件的微格阵列,具有多个高度相同的微格,所述微格阵列四周的外墙中有三面外墙的高度超出所述微格的高度,以在所述微格上方形成具有缺口的抽屉状导槽。A microgrid array of an electrochromic display device, which has a plurality of microgrids with the same height, and the height of three outer walls among the outer walls around the microgrid array exceeds the height of the microgrids, so that the microgrids A drawer-shaped guide groove with notches is formed above the grid.

本发明实施例提供的电致变色显示器件、其制备方法、阴极结构及微格阵列中,由于微格阵列四周的外墙中有三面外墙的高度超出该微格阵列中微格的高度,在微格上方形成了具有缺口的抽屉状导槽,未超出微格的那面外墙对应缺口的位置,且外墙超出的高度与阴极薄膜的厚度相同,抽屉状导槽的内部尺寸与具有阻挡条的阴极薄膜的外周尺寸匹配,因此阴极薄膜与微格阵列扣合后,阴极薄膜及第一导电基材能将阳极材料完全密封。且扣合过程利用了抽屉原理,用简单的方法保证了阳极材料完全密封,简化了对位过程的工艺难度。In the electrochromic display device provided by the embodiment of the present invention, its preparation method, cathode structure, and microgrid array, since the height of three of the outer walls around the microgrid array exceeds the height of the microgrids in the microgrid array, A drawer-shaped guide groove with a notch is formed above the microgrid, and the outer wall of the microgrid does not exceed the position corresponding to the notch, and the height beyond the outer wall is the same as the thickness of the cathode film, and the internal size of the drawer-shaped guide groove is the same as that with The peripheral dimensions of the cathode film of the barrier strip match, so after the cathode film is fastened with the microgrid array, the cathode film and the first conductive substrate can completely seal the anode material. Moreover, the buckling process utilizes the principle of drawers, and a simple method is used to ensure that the anode material is completely sealed, which simplifies the process difficulty of the alignment process.

另外,由于阻挡条对应于抽屉状导槽上缺口的位置,因此阴极薄膜与微格阵列扣合后,阻挡条能封住阴极薄膜的一条侧边,而微格阵列高出的三面外墙封住了阴极薄膜其它三条侧边,不会使阴极薄膜从盒状结构的侧边露出,因此,密封材料不会接触到阴极、阳极材料,也就避免了阴极、阳极材料被密封材料污染的问题。In addition, since the barrier strip corresponds to the position of the notch on the drawer-shaped guide groove, after the cathode film is fastened with the microgrid array, the barrier strip can seal one side of the cathode film, while the three outer walls of the microgrid array are sealed. Covering the other three sides of the cathode film will not expose the cathode film from the side of the box-shaped structure. Therefore, the sealing material will not contact the cathode and anode materials, and the problem of contamination of the cathode and anode materials by the sealing material will be avoided. .

附图说明Description of drawings

为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. For those skilled in the art, other drawings can also be obtained according to these drawings without any creative effort.

图1为现有电致变色显示器件的剖面图;FIG. 1 is a cross-sectional view of an existing electrochromic display device;

图2为本发明电致变色显示器件中阴极部分的立体图;2 is a perspective view of the cathode part in the electrochromic display device of the present invention;

图3为本发明电致变色显示器件中阳极部分的立体图;3 is a perspective view of the anode part in the electrochromic display device of the present invention;

图4为本发明电致变色显示器件阴极部分与阳极部分扣合过程的剖面图。Fig. 4 is a cross-sectional view of the fastening process of the cathode part and the anode part of the electrochromic display device of the present invention.

具体实施方式detailed description

本发明实施例提供一种电致变色显示器件,包括:在第二导电基材上依次形成的微格阵列、阴极薄膜、第一导电基材及密封材料,所述微格阵列中每个微格内填充有阳极材料,所述密封材料用于密封所述阴极薄膜及所述阳极材料;所述阴极薄膜的至少一个侧边具有阻挡条,所述阻挡条在垂直于所述第一导电基材方向上的厚度与所述阴极薄膜的厚度相同;所述微格阵列四周的外墙中有三面外墙的高度超出所述微格的高度,以在所述微格上方形成具有缺口的抽屉状导槽,所述超出的高度与所述阴极薄膜的厚度相同,所述抽屉状导槽的内部尺寸与具有所述阻挡条的所述阴极薄膜的外周尺寸匹配,以使具有所述阻挡条的所述阴极薄膜嵌入所述抽屉状导槽中,且所述阻挡条对应于所述缺口的位置。An embodiment of the present invention provides an electrochromic display device, comprising: a microgrid array, a cathode film, a first conductive substrate, and a sealing material sequentially formed on a second conductive substrate, and each microgrid array in the microgrid array The grid is filled with anode material, and the sealing material is used to seal the cathode film and the anode material; at least one side of the cathode film has a barrier strip, and the barrier strip is perpendicular to the first conductive base. The thickness in the material direction is the same as the thickness of the cathode film; the height of three outer walls in the outer walls around the microgrid array exceeds the height of the microgrid, so as to form a drawer with a gap above the microgrid shaped guide groove, the height of the excess is the same as the thickness of the cathode film, and the inner size of the drawer-shaped guide groove matches the outer peripheral dimension of the cathode film with the barrier strip, so that the barrier strip has The cathode film is embedded in the drawer-shaped guide groove, and the blocking strip corresponds to the position of the notch.

本发明实施例还提供一种电致变色显示器件的制备方法,包括:在第一导电基材上形成阴极薄膜;在所述阴极薄膜的至少一个侧边形成阻挡条,所述阻挡条在垂直于所述第一导电基材方向上的厚度与所述阴极薄膜的厚度相同;在第二导电基材上形成微格阵列,所述微格阵列四周的外墙中有三面外墙的高度超出所述微格阵列中微格的高度,以在所述微格上方形成具有缺口的抽屉状导槽,所述超出的高度与所述阴极薄膜的厚度相同,所述抽屉状导槽的内部尺寸与具有所述阻挡条的所述阴极薄膜的外周尺寸匹配;在所述微格阵列的每个所述微格中填充阳极材料;使所述阴极薄膜的、与具有所述阻挡条的侧边相对的另一侧边对准所述抽屉状导槽的缺口,将所述阴极薄膜推入所述抽屉状导槽内,以使所述第一、二导电基材、所述阴极薄膜与所述微格阵列扣合成盒状结构;用密封材料封装所述盒状结构。An embodiment of the present invention also provides a method for manufacturing an electrochromic display device, comprising: forming a cathode film on a first conductive substrate; forming a barrier strip on at least one side of the cathode film, and the barrier strip is vertical The thickness in the direction of the first conductive substrate is the same as the thickness of the cathode film; a microgrid array is formed on the second conductive substrate, and the height of three of the outer walls around the microgrid array exceeds The height of the micro-grid in the micro-grid array is to form a drawer-shaped guide groove with a gap above the micro-grid array, the height of the excess is the same as the thickness of the cathode film, and the internal dimension of the drawer-shaped guide groove is Matching the peripheral size of the cathode film with the barrier strip; filling the anode material in each of the microgrids of the microgrid array; making the cathode film and the side with the barrier strip The opposite side is aligned with the notch of the drawer-shaped guide groove, and the cathode film is pushed into the drawer-shaped guide groove, so that the first and second conductive substrates, the cathode film and the cathode film The microgrid array is buckled into a box-like structure; the box-like structure is sealed with a sealing material.

本发明实施例又提供一种电致变色显示器件的阴极结构,包括阴极薄膜,还包括阻挡条,所述阻挡条形成在所述阴极薄膜的至少一个侧边,且所述阻挡条在垂直于所述阴极薄膜的方向上的厚度与所述阴极薄膜的厚度相同。An embodiment of the present invention further provides a cathode structure of an electrochromic display device, which includes a cathode film and a barrier bar, the barrier bar is formed on at least one side of the cathode film, and the barrier bar is perpendicular to the The thickness in the direction of the cathode film is the same as the thickness of the cathode film.

本发明实施例再提供一种电致变色显示器件的微格阵列,具有多个高度相同的微格,所述微格阵列四周的外墙中有三面外墙的高度超出所述微格的高度,以在所述微格上方形成具有缺口的抽屉状导槽。The embodiment of the present invention further provides a microgrid array of an electrochromic display device, which has a plurality of microgrids with the same height, and the height of three outer walls among the outer walls around the microgrid array exceeds the height of the microgrids , to form a drawer-shaped guide groove with a gap above the microgrid.

本发明实施例提供的电致变色显示器件、其制备方法、阴极结构及微格阵列中,由于微格阵列四周的外墙中有三面外墙的高度超出该微格阵列中微格的高度,在微格上方形成了具有缺口的抽屉状导槽,未超出微格的那面外墙对应缺口的位置,且外墙超出的高度与阴极薄膜的厚度相同,抽屉状导槽的内部尺寸与具有阻挡条的阴极薄膜的外周尺寸匹配,因此阴极薄膜与微格阵列扣合后,阴极薄膜及第一导电基材能将阳极材料完全密封。且扣合过程利用了抽屉原理,用简单的方法保证了阳极材料完全密封,简化了对位过程的工艺难度。In the electrochromic display device provided by the embodiment of the present invention, its preparation method, cathode structure, and microgrid array, since the height of three of the outer walls around the microgrid array exceeds the height of the microgrids in the microgrid array, A drawer-shaped guide groove with a notch is formed above the microgrid, and the outer wall of the microgrid does not exceed the position corresponding to the notch, and the height beyond the outer wall is the same as the thickness of the cathode film, and the internal size of the drawer-shaped guide groove is the same as that with The peripheral dimensions of the cathode film of the barrier strip match, so after the cathode film is fastened with the microgrid array, the cathode film and the first conductive substrate can completely seal the anode material. Moreover, the buckling process utilizes the principle of drawers, and a simple method is used to ensure that the anode material is completely sealed, which simplifies the process difficulty of the alignment process.

另外,由于阻挡条对应于抽屉状导槽上缺口的位置,因此阴极薄膜与微格阵列扣合后,阻挡条能封住阴极薄膜的一条侧边,而微格阵列高出的三面外墙封住了阴极薄膜其它三条侧边,不会使阴极薄膜从盒状结构的侧边露出,因此,密封材料不会接触到阴极、阳极材料,也就避免了阴极、阳极材料被密封材料污染的问题。In addition, since the barrier strip corresponds to the position of the notch on the drawer-shaped guide groove, after the cathode film is fastened with the microgrid array, the barrier strip can seal one side of the cathode film, while the three outer walls of the microgrid array are sealed. Covering the other three sides of the cathode film will not expose the cathode film from the side of the box-shaped structure. Therefore, the sealing material will not contact the cathode and anode materials, and the problem of contamination of the cathode and anode materials by the sealing material will be avoided. .

实施例1Example 1

本发明实施例提供一种电致变色显示器件,参照图2~图4,对该器件的结构进行详细描述。An embodiment of the present invention provides an electrochromic display device, and the structure of the device will be described in detail with reference to FIGS. 2 to 4 .

电致变色显示器件包括:在第二导电基材31上依次形成的微格阵列32、阴极薄膜22、第一导电基材21及密封材料(图中未示出)。微格阵列32中每个微格33内填充有阳极材料(图中未示出),所述密封材料用于密封所述阴极薄膜22及所述阳极材料;阴极薄膜22的至少一个侧边具有阻挡条23,该阻挡条23在垂直于所述第一导电基材21方向上的厚度d2与阴极薄膜的厚度d1相同;该微格阵列32四周的外墙34中有三面外墙的高度超出该微格33的高度,以在该微格33上方形成具有缺口的抽屉状导槽35。其中,外墙34超出的高度d3与阴极薄膜的厚度d2相同,且抽屉状导槽的内部尺寸(宽W2,长L2)与具有阻挡条23的阴极薄膜22的外周尺寸(宽W1,长L1)匹配,以使具有阻挡条23的阴极薄膜22嵌入该抽屉状导槽35中,且阻挡条23对应于该缺口的位置。The electrochromic display device includes: a microgrid array 32 , a cathode film 22 , a first conductive substrate 21 and a sealing material (not shown in the figure) sequentially formed on a second conductive substrate 31 . Each microgrid 33 in the microgrid array 32 is filled with an anode material (not shown), and the sealing material is used to seal the cathode film 22 and the anode material; at least one side of the cathode film 22 has Barrier strip 23, the thickness d2 of this barrier strip 23 in the direction perpendicular to the first conductive substrate 21 is the same as the thickness d1 of the cathode film; the height of three outer walls in the outer walls 34 around the micro grid array 32 exceeds The height of the microgrid 33 is such that a drawer-shaped guide groove 35 with a gap is formed above the microgrid 33 . Wherein, the height d3 that the outer wall 34 exceeds is the same as the thickness d2 of the cathode film, and the internal dimension (width W2, length L2) of the drawer-shaped guide groove is the same as the outer circumference dimension (width W1, length L1) of the cathode film 22 with the barrier bar 23. ) match, so that the cathode film 22 with the barrier strip 23 is embedded in the drawer-shaped guide groove 35, and the barrier strip 23 corresponds to the position of the notch.

上述电致变色显示器件中,阻挡条23可由但不限于辐射固化材料制成,微格阵列可由但不限于辐射固化材料制成。阴极薄膜的厚度与微格的高度比可为1:3~1:10,优选为1:5~1:8。In the above electrochromic display device, the barrier strips 23 may be made of, but not limited to, radiation-cured materials, and the microgrid arrays may be made of, but not limited to, radiation-cured materials. The ratio of the thickness of the cathode film to the height of the microgrid may be 1:3-1:10, preferably 1:5-1:8.

另外,上述电致变色显示器件中的密封材料可为紫外线固化胶,也可以为低温环氧树脂胶。In addition, the sealing material in the above-mentioned electrochromic display device may be ultraviolet curing glue, or low temperature epoxy resin glue.

由于微格阵列四周的外墙中有三面外墙的高度超出该微格阵列中微格的高度,在微格上方形成了具有缺口的抽屉状导槽,未超出微格的那面外墙对应缺口的位置,且外墙超出的高度与阴极薄膜的厚度相同,抽屉状导槽的内部尺寸与具有阻挡条的阴极薄膜的外周尺寸匹配,因此阴极薄膜与微格阵列扣合后,阴极薄膜及第一导电基材能将阳极材料完全密封。Because the height of three of the outer walls around the microgrid array exceeds the height of the microgrids in the microgrid array, a drawer-like guide groove with a gap is formed above the microgrid, and the outer wall that does not exceed the microgrid corresponds to The position of the gap, and the height beyond the outer wall is the same as the thickness of the cathode film, and the internal size of the drawer-shaped guide groove matches the outer peripheral size of the cathode film with the barrier strip, so after the cathode film and the microgrid array are fastened, the cathode film and the The first conductive substrate completely encapsulates the anode material.

另外,由于阻挡条对应于抽屉状导槽上缺口的位置,因此阴极薄膜与微格阵列扣合后,阻挡条能封住阴极薄膜的一条侧边,而微格阵列高出的三面外墙封住了阴极薄膜其它三条侧边,不会使阴极薄膜从盒状结构的侧边露出,因此,密封材料不会接触到阴极、阳极材料,也就避免了阴极、阳极材料被密封材料污染的问题。In addition, since the barrier strip corresponds to the position of the notch on the drawer-shaped guide groove, after the cathode film is fastened with the microgrid array, the barrier strip can seal one side of the cathode film, while the three outer walls of the microgrid array are sealed. Covering the other three sides of the cathode film will not expose the cathode film from the side of the box-shaped structure. Therefore, the sealing material will not contact the cathode and anode materials, and the problem of contamination of the cathode and anode materials by the sealing material will be avoided. .

实施例2Example 2

本实施例提供一种电致变色显示器件的制备方法,如图2~4所示,该方法包括如下步骤。This embodiment provides a method for manufacturing an electrochromic display device, as shown in FIGS. 2-4 , the method includes the following steps.

步骤1、在第一导电基材21上形成阴极薄膜22。Step 1, forming a cathode thin film 22 on the first conductive substrate 21 .

步骤2、在阴极薄膜22侧边形成阻挡条23。Step 2, forming barrier strips 23 on the side of the cathode film 22 .

具体地,如图2所示,在所述阴极薄膜22的至少一个侧边涂覆辐射固化材料并进行光固化,以在所述阴极薄膜22的所述至少一个侧边形成阻挡条23,所述阻挡条23在垂直于所述第一导电基材21方向上的厚度d2与所述阴极薄膜22的厚度d1相同。Specifically, as shown in FIG. 2, at least one side of the cathode film 22 is coated with a radiation-curable material and photocured to form a barrier strip 23 on the at least one side of the cathode film 22, so The thickness d2 of the barrier strip 23 in the direction perpendicular to the first conductive substrate 21 is the same as the thickness d1 of the cathode film 22 .

需要说明的是:阻挡条23的个数并不限于图2所示的1个,优选为3个,可分别形成在阴极薄膜的3个侧边上,当3个侧边设置有阻挡条的阴极薄膜与下面描述的微格阵列扣合后,增加的阻挡条能更好地防止阳极材料及阴极材料受到密封材料的污染。It should be noted that the number of barrier strips 23 is not limited to one as shown in FIG. After the cathode film is fastened with the microgrid array described below, the added barrier strips can better prevent the anode and cathode materials from being polluted by the sealing material.

步骤3、形成具有抽屉状导槽35的微格阵列32。Step 3, forming a microgrid array 32 with drawer-shaped guide grooves 35 .

具体地,如图3所示,在第二导电基材31上形成微格阵列32,所述微格阵列32四周的外墙34中有三面外墙34的高度超出所述微格阵列32中微格33的高度,以在所述微格33上方形成具有缺口的抽屉状导槽35,所述超出的高度d3与所述阴极薄膜22的厚度d1相同,所述抽屉状导槽35的内部尺寸(宽W2,长L2)与具有所述阻挡条23的所述阴极薄膜22的外周尺寸(宽W1,长L1)匹配。即具有阻挡条23的阴极薄膜22能正好容纳在具有缺口的抽屉状导槽35中。Specifically, as shown in FIG. 3 , a microgrid array 32 is formed on the second conductive substrate 31, and the height of three outer walls 34 exceeds that of the microgrid array 32 in the outer walls 34 around the microgrid array 32. The height of the microgrid 33 is to form a drawer-shaped guide groove 35 with a gap above the microgrid 33, the height d3 of the excess is the same as the thickness d1 of the cathode film 22, and the inside of the drawer-shaped guide groove 35 The dimensions (width W2, length L2) match the outer peripheral dimensions (width W1, length L1) of the cathode film 22 with the barrier strips 23. That is, the cathode film 22 with the barrier strip 23 can just be accommodated in the drawer-shaped guide groove 35 with the gap.

需要说明的是:微格的个数并不限于图3所示的4个,可以依据不同的工艺需求来设置不同的个数。It should be noted that the number of micro cells is not limited to 4 as shown in FIG. 3 , and different numbers can be set according to different process requirements.

步骤4、在所述微格阵列32的每个所述微格33中填充阳极材料。Step 4, filling anode material in each of the microgrids 33 of the microgrid array 32 .

步骤5、扣合成盒。Step 5, buckle the synthesis box.

具体地、如图4所示,使所述阴极薄膜22的、与具有所述阻挡条23的侧边相对的另一侧边对准所述抽屉状导槽35的缺口,将所述阴极薄膜22推入所述抽屉状导槽35内,以使所述第一导电基材21、第二导电基材31、所述阴极薄膜22与所述微格阵列32扣合成盒状结构。Specifically, as shown in Figure 4, the other side of the cathode film 22, opposite to the side with the barrier strip 23, is aligned with the notch of the drawer-shaped guide groove 35, and the cathode film 22 is pushed into the drawer-shaped guide groove 35, so that the first conductive substrate 21, the second conductive substrate 31, the cathode film 22 and the microgrid array 32 are buckled into a box-like structure.

步骤6、用密封材料密封所述盒状结构,以形成电致变色显示器件。Step 6, sealing the box-shaped structure with a sealing material to form an electrochromic display device.

本实施例中,由于微格阵列32四周的外墙34中有三面外墙34的高度超出该微格阵列32中微格的高度,在微格上方形成了具有缺口的抽屉状导槽35,未超出微格的那面外墙对应缺口的位置,因此在扣合成盒的步骤中,只需将阴极薄膜22的对应缺口的侧边与缺口对位后,将阴极薄膜22像推抽屉一样推入抽屉状导槽35中,就可完成阴极薄膜22与微格阵列32的扣合;又由于上述外墙34超出的高度d3与阴极薄膜的厚度d1相同,且抽屉状导槽35的内部尺寸(宽W2,长L2)与具有阻挡条23的阴极薄膜22的外周尺寸匹配(宽W1,长L1),因此阴极薄膜22与微格阵列32扣合后,阴极薄膜22及第一导电基材21能将阳极材料完全密封。本实施例利用抽屉原理,用简单的方法保证了阳极材料完全密封,简化了对位过程的工艺难度。In this embodiment, since the height of three outer walls 34 in the outer walls 34 around the microgrid array 32 exceeds the height of the microgrids in the microgrid array 32, a drawer-shaped guide groove 35 with a gap is formed above the microgrid array. The position corresponding to the notch on the outer wall that does not exceed the microgrid, so in the step of buckling the box, you only need to align the side of the cathode film 22 corresponding to the notch with the notch, and then push the cathode film 22 like a drawer. into the drawer-shaped guide groove 35, the snap-fit of the cathode film 22 and the microgrid array 32 can be completed; (width W2, long L2) match with the peripheral size of the cathode film 22 having barrier bar 23 (width W1, long L1), so after the cathode film 22 is fastened with the microgrid array 32, the cathode film 22 and the first conductive substrate 21 can completely seal the anode material. This embodiment utilizes the drawer principle to ensure that the anode material is completely sealed by a simple method, which simplifies the technical difficulty of the alignment process.

另外,由于在扣合成盒的步骤中,是将阴极薄膜22上与具有阻挡条23的侧边相对的另一侧边对准缺口,因此阴极薄膜22与微格阵列32扣合后,阻挡条23能封住阴极薄膜22的一条侧边,而微格阵列32高出的三面外墙34封住了阴极薄膜22其它三条侧边,不会使阴极薄膜22从盒状结构的侧边露出,从而在随后的封装步骤中,密封材料不会接触到阴极、阳极材料,也就避免了阴极、阳极材料被密封材料污染的问题。In addition, because in the step of buckling the synthetic box, the other side opposite to the side with the barrier strip 23 on the cathode film 22 is aligned with the notch, so after the cathode film 22 and the microgrid array 32 are buckled together, the barrier strip 23 can seal one side of the cathode film 22, and the three outer walls 34 higher than the microgrid array 32 seal the other three sides of the cathode film 22, so that the cathode film 22 will not be exposed from the side of the box-shaped structure. Therefore, in the subsequent packaging step, the sealing material will not contact the cathode and anode materials, thus avoiding the problem that the cathode and anode materials are polluted by the sealing material.

实施例3Example 3

本实施例提供一种电致变色显示器件的制备方法,该方法包括如下步骤。This embodiment provides a method for manufacturing an electrochromic display device, and the method includes the following steps.

步骤1、在第一导电基材上形成阴极薄膜。该步骤具体包括:A)在第一导电基材上形成厚度为20~40μm的成膜用槽;B)采用丝网印刷、刮涂或旋涂的方式在成膜用槽中填充阴极材料;C)在30℃~50℃,优选为45℃的环境温度下,对第一导电基材烘烤30min,形成厚度为5~20μm,优选为10~15μm的阴极薄膜;D)去除成膜用槽。Step 1, forming a cathode thin film on the first conductive substrate. This step specifically includes: A) forming a film-forming groove with a thickness of 20-40 μm on the first conductive substrate; B) filling the film-forming groove with a cathode material by screen printing, doctor blade coating or spin coating; C) Bake the first conductive substrate for 30 minutes at an ambient temperature of 30°C to 50°C, preferably 45°C, to form a cathode film with a thickness of 5 to 20 μm, preferably 10 to 15 μm; D) remove the film-forming groove.

步骤2、在阴极薄膜侧边形成阻挡条。Step 2, forming barrier bars on the side of the cathode film.

具体地,在阴极薄膜的至少一个侧边涂覆辐射固化材料并进行光固化,以在该阴极薄膜的所述至少一个侧边形成阻挡条,该阻挡条在垂直于第一导电基材方向上的厚度与该阴极薄膜的厚度相同。Specifically, at least one side of the cathode film is coated with a radiation-curable material and photocured to form a barrier strip on the at least one side of the cathode film, and the barrier strip is perpendicular to the direction of the first conductive substrate. The thickness is the same as that of the cathode film.

步骤3、形成具有抽屉状导槽的微格阵列。Step 3, forming a microgrid array with drawer-shaped guide grooves.

具体地,该步骤包括:A)在第二导电基材上涂覆辐射固化材料;B)通过灰阶掩膜版将该辐射固化材料光照固化;C)清洗未固化的辐射固化材料以在该第二导电基材上形成微格阵列。其中,该微格阵列四周的外墙中有三面外墙的高度超出微格阵列中微格的高度,以在微格上方形成具有缺口的抽屉状导槽,超出的高度与该阴极薄膜的厚度相同,抽屉状导槽的内部尺寸与具有阻挡条的阴极薄膜的外周尺寸匹配。Specifically, this step includes: A) coating a radiation-cured material on the second conductive substrate; B) light-curing the radiation-cured material through a grayscale mask; C) cleaning the uncured radiation-cured material so that A microgrid array is formed on the second conductive substrate. Among the outer walls around the microgrid array, the height of three outer walls exceeds the height of the microgrids in the microgrid array, so as to form a drawer-shaped guide groove with a gap above the microgrid array, and the excess height is equal to the thickness of the cathode film. Likewise, the inner dimensions of the drawer-shaped channel match the outer peripheral dimensions of the cathode film with the barrier strips.

另外,阴极薄膜的厚度与微格的高度比可为1:3~1:10,优选为1:5~1:8,以使由上述方法形成的电致变色显示器件具有更好的显示性能。In addition, the ratio of the thickness of the cathode film to the height of the microgrid can be 1:3 to 1:10, preferably 1:5 to 1:8, so that the electrochromic display device formed by the above method has better display performance .

步骤4、采用刮涂或灌装的方式在微格阵列的每个微格中填充阳极材料。Step 4, filling the anode material in each microgrid of the microgrid array by scraping or filling.

步骤5、在真空环境,且环境温度为45℃的条件下,采用红外探测的方式使阴极薄膜的、与具有所述阻挡条的侧边相对的另一侧边对准抽屉状导槽的缺口,将该阴极薄膜推入抽屉状导槽,以使第一、二导电基材、该阴极薄膜与微格阵列扣合成盒状结构。Step 5. In a vacuum environment with an ambient temperature of 45°C, use infrared detection to align the other side of the cathode film opposite to the side with the barrier strip with the notch of the drawer-shaped guide groove Pushing the cathode film into the drawer-shaped guide groove, so that the first and second conductive substrates, the cathode film and the microgrid array are buckled into a box-like structure.

步骤6、用密封材料封装所述盒状结构,以形成电致变色显示器件。其中,密封材料可为但不限于紫外线固化胶或者低温环氧树脂胶。Step 6, encapsulating the box-shaped structure with a sealing material to form an electrochromic display device. Wherein, the sealing material may be but not limited to ultraviolet curing glue or low temperature epoxy resin glue.

本实施例中,由于微格阵列四周的外墙中有三面外墙的高度超出该微格阵列中微格的高度,在微格上方形成了具有缺口的抽屉状导槽,未超出微格的那面外墙对应缺口的位置,因此在扣合成盒的步骤中,只需将阴极薄膜的对应缺口的侧边与缺口对位后,将阴极薄膜像推抽屉一样推入抽屉状导槽中,就可完成阴极薄膜与微格阵列的扣合;又由于上述外墙超出的高度与阴极薄膜的厚度相同,且抽屉状导槽的内部尺寸与具有阻挡条的阴极薄膜的外周尺寸匹配,因此阴极薄膜与微格阵列扣合后,阴极薄膜及第一导电基材能将阳极材料完全密封。本实施例利用抽屉原理,用简单的方法保证了阳极材料完全密封,简化了对位过程的工艺难度。In this embodiment, because the height of three exterior walls in the outer walls around the microgrid array exceeds the height of the microgrids in the microgrid array, a drawer-like guide groove with gaps is formed above the microgrids, which does not exceed the height of the microgrids. The outer wall corresponds to the position of the notch, so in the step of buckling the synthesis box, you only need to align the side of the cathode film corresponding to the notch with the notch, and then push the cathode film into the drawer-shaped guide groove like a drawer. The fastening of the cathode film and the microgrid array can be completed; and because the height of the above-mentioned outer wall is the same as the thickness of the cathode film, and the internal size of the drawer-shaped guide groove matches the outer peripheral size of the cathode film with the barrier strip, the cathode After the film is buckled with the microgrid array, the cathode film and the first conductive substrate can completely seal the anode material. This embodiment utilizes the drawer principle to ensure that the anode material is completely sealed by a simple method, which simplifies the technical difficulty of the alignment process.

另外,由于在扣合成盒的步骤中,是将阴极薄膜上与具有阻挡条的侧边相对的另一侧边对准缺口,因此阴极薄膜与微格阵列扣合后,阻挡条能封住阴极薄膜的一条侧边,而微格阵列高出的三面外墙封住了阴极薄膜其它三条侧边,不会使阴极薄膜从盒状结构的侧边露出,从而在随后的封装步骤中,密封材料不会接触到阴极、阳极材料,也就避免了阴极、阳极材料被密封材料污染的问题。In addition, because in the step of buckling the synthesis box, the other side of the cathode film opposite to the side with the barrier strip is aligned with the notch, so after the cathode film is buckled with the microgrid array, the barrier strip can seal the cathode film. One side of the film, and the three outer walls of the microgrid array seal the other three sides of the cathode film, so that the cathode film will not be exposed from the side of the box-shaped structure, so that in the subsequent packaging step, the sealing material The cathode and anode materials will not be contacted, so the problem of the cathode and anode materials being polluted by the sealing material is avoided.

需要说明的是:上述实施例中的第一、二导电基材可为透明导电玻璃,或为透明绝缘基底与ITO粘接在一起的结构。It should be noted that the first and second conductive substrates in the above embodiments can be transparent conductive glass, or a structure in which a transparent insulating substrate and ITO are bonded together.

实施例4Example 4

本实施例提供一种电致变色显示器件的阴极结构,如图2所示,包括阴极薄膜22,还包括阻挡条23,所述阻挡条23形成在所述阴极薄膜22的至少一个侧边,且所述阻挡条23在垂直于所述阴极薄膜22的方向上的厚度d2与所述阴极薄膜22的厚度d1相同。This embodiment provides a cathode structure of an electrochromic display device, as shown in FIG. 2 , including a cathode film 22 and a barrier strip 23 formed on at least one side of the cathode film 22, And the thickness d2 of the barrier strip 23 in the direction perpendicular to the cathode film 22 is the same as the thickness d1 of the cathode film 22 .

本实施例还提供一种电致变色显示器件的微格阵列32,如图3所示,具有多个高度相同的微格33,其中,所述微格阵列32四周的外墙34中有三面外墙34的高度超出所述微格33的高度,以在所述微格33上方形成具有缺口的抽屉状导槽35。The present embodiment also provides a microgrid array 32 of an electrochromic display device, as shown in FIG. The height of the outer wall 34 exceeds the height of the microgrid 33 to form a drawer-shaped guide groove 35 with a gap above the microgrid 33 .

上述电致变色显示器件的阴极结构、微格阵列及它们的制备方法已在实施例1~实施例3中进行了详细说明,在此不再赘述。The cathode structure, the microgrid array and their preparation methods of the above-mentioned electrochromic display device have been described in detail in Embodiment 1 to Embodiment 3, and will not be repeated here.

本发明实施例主要用于电子纸、便携式电子产品等。The embodiments of the present invention are mainly used in electronic paper, portable electronic products, and the like.

以上所述,仅为本发明的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,可轻易想到变化或替换,都应涵盖在本发明的保护范围之内。因此,本发明的保护范围应所述以权利要求的保护范围为准。The above is only a specific embodiment of the present invention, but the scope of protection of the present invention is not limited thereto. Anyone skilled in the art can easily think of changes or substitutions within the technical scope disclosed in the present invention. Should be covered within the protection scope of the present invention. Therefore, the protection scope of the present invention should be based on the protection scope of the claims.

Claims (18)

1.一种电致变色显示器件,包括:在第二导电基材上依次形成的微格阵列、阴极薄膜、第一导电基材及密封材料,所述微格阵列中每个微格内填充有阳极材料,所述密封材料用于密封所述阴极薄膜及所述阳极材料,其特征在于,1. An electrochromic display device, comprising: a microgrid array, a cathode film, a first conductive substrate and a sealing material successively formed on the second conductive substrate, filling in each microgrid in the microgrid array There is an anode material, and the sealing material is used to seal the cathode film and the anode material, characterized in that, 所述阴极薄膜的一个侧边具有阻挡条,所述阻挡条在垂直于所述第一导电基材方向上的厚度与所述阴极薄膜的厚度相同;One side of the cathode film has a barrier strip, and the thickness of the barrier strip in a direction perpendicular to the first conductive substrate is the same as the thickness of the cathode film; 所述微格阵列具有多个高度相同的微格,且所述微格阵列四周的外墙中有三面外墙的高度超出所述微格的高度,以在所述微格上方形成具有缺口的抽屉状导槽,所述超出的高度与所述阴极薄膜的厚度相同,所述抽屉状导槽的内部尺寸与具有所述阻挡条的所述阴极薄膜的外周尺寸匹配,以使具有所述阻挡条的所述阴极薄膜嵌入所述抽屉状导槽中,且所述阻挡条对应于所述缺口的位置。The microgrid array has a plurality of microgrids with the same height, and the height of three outer walls in the outer walls around the microgrid array exceeds the height of the microgrid, so as to form a gap with gaps above the microgrid array. The drawer-shaped guide groove, the height of the excess is the same as the thickness of the cathode film, and the inner size of the drawer-shaped guide groove matches the outer peripheral dimension of the cathode film with the barrier strip, so that the barrier strip has the The cathode film of the strip is embedded in the drawer-shaped guide groove, and the blocking strip corresponds to the position of the notch. 2.根据权利要求1所述的电致变色显示器件,其特征在于,所述阻挡条由辐射固化材料制成。2. The electrochromic display device according to claim 1, wherein the barrier ribs are made of radiation curable material. 3.根据权利要求1所述的电致变色显示器件,其特征在于,所述微格阵列由辐射固化材料制成。3. The electrochromic display device according to claim 1, wherein the microgrid array is made of radiation-cured material. 4.根据权利要求1所述的电致变色显示器件,其特征在于,所述阴极薄膜的所述厚度与所述微格的高度比为1:3~1:10。4 . The electrochromic display device according to claim 1 , wherein the ratio of the thickness of the cathode film to the height of the microgrid is 1:3˜1:10. 5.根据权利要求4所述的电致变色显示器件,其特征在于,所述阴极薄膜的所述厚度与所述微格的高度比为1:5~1:8。5 . The electrochromic display device according to claim 4 , wherein the ratio of the thickness of the cathode film to the height of the microgrid is 1:5˜1:8. 6.根据权利要求1~5任一项所述的电致变色显示器件,其特征在于,所述密封材料为紫外线固化胶或者低温环氧树脂胶。6 . The electrochromic display device according to claim 1 , wherein the sealing material is ultraviolet curing glue or low temperature epoxy resin glue. 7.一种电致变色显示器件的制备方法,其特征在于,包括:7. A method for preparing an electrochromic display device, comprising: 在第一导电基材上形成阴极薄膜;forming a cathode film on the first conductive substrate; 在所述阴极薄膜的一个侧边形成阻挡条,所述阻挡条在垂直于所述第一导电基材方向上的厚度与所述阴极薄膜的厚度相同;forming a barrier strip on one side of the cathode film, the thickness of the barrier strip in a direction perpendicular to the first conductive substrate is the same as the thickness of the cathode film; 在第二导电基材上形成微格阵列,所述微格阵列具有多个高度相同的微格,且所述微格阵列四周的外墙中有三面外墙的高度超出所述微格阵列中微格的高度,以在所述微格上方形成具有缺口的抽屉状导槽,所述超出的高度与所述阴极薄膜的厚度相同,所述抽屉状导槽的内部尺寸与具有所述阻挡条的所述阴极薄膜的外周尺寸匹配;A microgrid array is formed on the second conductive substrate, the microgrid array has a plurality of microgrids with the same height, and the height of three outer walls in the outer walls around the microgrid array exceeds that of the microgrid array The height of the microgrid is to form a drawer-shaped guide groove with a gap above the microgrid, the height of the excess is the same as the thickness of the cathode film, and the internal size of the drawer-shaped guide groove is the same as that with the barrier strip The peripheral dimensions of the cathode film are matched; 在所述微格阵列的每个所述微格中填充阳极材料;Filling an anode material in each of the microgrids of the microgrid array; 使所述阴极薄膜的、与具有所述阻挡条的侧边相对的另一侧边对准所述抽屉状导槽的缺口,将所述阴极薄膜推入所述抽屉状导槽内,以使所述第一、二导电基材、所述阴极薄膜与所述微格阵列扣合成盒状结构;Make the other side of the cathode film opposite to the side with the blocking strip aligned with the notch of the drawer-shaped guide groove, push the cathode film into the drawer-shaped guide groove, so that The first and second conductive substrates, the cathode film and the microgrid array are combined into a box-like structure; 用密封材料封装所述盒状结构。The box-like structure is encapsulated with a sealing material. 8.根据权利要求7所述的方法,其特征在于,所述在所述阴极薄膜的一个侧边形成阻挡条,包括:8. The method according to claim 7, wherein said forming a barrier strip on one side of said cathode film comprises: 在所述阴极薄膜的一个侧边涂覆第一辐射固化材料并进行光固化,以在所述阴极薄膜的一个侧边形成所述阻挡条。Coating a first radiation curable material on one side of the cathode film and performing photocuring to form the barrier strips on one side of the cathode film. 9.根据权利要求7所述的方法,其特征在于,所述在第二导电基材上形成微格阵列,包括:9. The method according to claim 7, wherein said forming a microgrid array on the second conductive substrate comprises: 在所述第二导电基材上涂覆第二辐射固化材料;coating a second radiation curable material on the second conductive substrate; 通过灰阶掩膜版将所述第二辐射固化材料光照固化;Light-curing the second radiation-curable material through a grayscale mask; 清洗未固化的所述第二辐射固化材料以在所述第二导电基材上形成所述微格阵列。Cleaning the uncured second radiation curable material to form the microgrid array on the second conductive substrate. 10.根据权利要求7所述的方法,其特征在于,所述在所述微格阵列的每个所述微格中填充阳极材料,包括:10. method according to claim 7, is characterized in that, described filling anode material in each described microgrid of described microgrid array, comprises: 采用刮涂或灌装的方式在所述微格阵列的每个所述微格中填充阳极材料。The anode material is filled in each microgrid of the microgrid array by scraping or filling. 11.根据权利要求7所述的方法,其特征在于,所述在第一导电基材上形成阴极薄膜,包括:11. The method according to claim 7, wherein said forming a cathode film on the first conductive substrate comprises: 在所述第一导电基材上形成厚度为20~40μm的成膜用槽;forming a film-forming groove with a thickness of 20-40 μm on the first conductive substrate; 采用丝网印刷、刮涂或旋涂的方式在所述成膜用槽中填充阴极材料;Filling the cathode material in the film-forming tank by screen printing, scraping or spin coating; 在30℃~50℃的环境温度下,对所述第一导电基材烘烤30min,形成厚度为5~20μm的阴极薄膜;Baking the first conductive substrate for 30 minutes at an ambient temperature of 30°C-50°C to form a cathode film with a thickness of 5-20 μm; 去除所述成膜用槽。The film-forming groove is removed. 12.根据权利要求11所述的方法,其特征在于,所述在30℃~50℃的环境温度下,对所述第一导电基材烘烤30min,形成厚度为5~20μm的阴极薄膜,包括:12. The method according to claim 11, characterized in that, at an ambient temperature of 30° C. to 50° C., the first conductive substrate is baked for 30 minutes to form a cathode film with a thickness of 5 to 20 μm, include: 在45℃的环境温度下,对所述第一导电基材烘烤30min,形成厚度为5~20μm的阴极薄膜。At an ambient temperature of 45° C., the first conductive substrate is baked for 30 minutes to form a cathode film with a thickness of 5-20 μm. 13.根据权利要求11所述的方法,其特征在于,阴极薄膜的厚度为10~15μm。13. The method according to claim 11, characterized in that the thickness of the cathode film is 10-15 μm. 14.根据权利要求7所述的方法,其特征在于,所述使所述阴极薄膜的、与具有所述阻挡条的侧边相对的另一侧边对准所述抽屉状导槽的缺口,包括:14. The method according to claim 7, wherein the other side of the cathode film, which is opposite to the side with the barrier strip, is aligned with the notch of the drawer-shaped guide groove, include: 采用红外探测的方式使所述阴极薄膜的、与具有所述阻挡条的侧边相对的另一侧边对准所述抽屉状导槽的缺口。The other side of the cathode film opposite to the side with the barrier strip is aligned with the notch of the drawer-shaped guide groove by means of infrared detection. 15.根据权利要求7所述的方法,其特征在于,所述使所述阴极薄膜的、与具有所述阻挡条的侧边相对的另一侧边对准所述抽屉状导槽的缺口,将所述阴极薄膜推入所述抽屉状导槽,以使所述第一、二导电基材、所述阴极薄膜与所述微格阵列扣合成盒状结构,包括:15. The method according to claim 7, wherein the other side of the cathode film opposite to the side with the barrier strip is aligned with the notch of the drawer-shaped guide groove, Pushing the cathode film into the drawer-shaped guide groove, so that the first and second conductive substrates, the cathode film and the microgrid array are buckled into a box-like structure, including: 在真空环境,且环境温度为45℃的条件下,使所述阴极薄膜的、与具有所述阻挡条的侧边相对的另一侧边对准所述抽屉状导槽的缺口,将所述阴极薄膜推入所述抽屉状导槽,以使所述第一、二导电基材、所述阴极薄膜与所述微格阵列扣合成盒状结构。Under the condition of vacuum environment and ambient temperature of 45°C, align the other side of the cathode film opposite to the side with the barrier bar with the notch of the drawer-shaped guide groove, and place the The cathode film is pushed into the drawer-shaped guide groove, so that the first and second conductive substrates, the cathode film and the microgrid array are buckled into a box-like structure. 16.根据权利要求7~15任一项所述的方法,其特征在于,所述阴极薄膜的厚度与所述微格的高度比为1:3~1:10。16. The method according to any one of claims 7-15, characterized in that the ratio of the thickness of the cathode film to the height of the microgrid is 1:3-1:10. 17.根据权利要求16所述的方法,其特征在于,所述阴极薄膜的厚度与所述微格的高度比为1:5~1:8。17. The method according to claim 16, characterized in that the ratio of the thickness of the cathode film to the height of the microgrid is 1:5˜1:8. 18.根据权利要求7~15任一项所述的方法,其特征在于,所述密封材料为紫外线固化胶或者低温环氧树脂胶。18. The method according to any one of claims 7-15, wherein the sealing material is ultraviolet curing glue or low temperature epoxy resin glue.
CN201510023465.3A 2011-05-23 2011-05-23 Electrochromic display device, its preparation method, cathode construction and micro- lattice array Active CN104536231B (en)

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US6515787B1 (en) * 2000-03-07 2003-02-04 Eclipse Energy Systems, Inc. Electrochromic layer
CN1482509A (en) * 2002-09-10 2004-03-17 ϣ An improved electrochromic or electrodeposition display and its manufacturing method
JP2007052109A (en) * 2005-08-16 2007-03-01 Dainippon Ink & Chem Inc ELECTROCHEMICAL DISPLAY ELEMENT AND METHOD FOR PRODUCING ELECTROCHEMICAL DISPLAY ELEMENT
CN101726956A (en) * 2009-11-18 2010-06-09 华东师范大学 Novel unit module for solar-powered self-driven electronic paper apparatus and method for preparing same

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11101994A (en) * 1997-09-29 1999-04-13 Sony Corp Picture display device of electrodeposition type
US6515787B1 (en) * 2000-03-07 2003-02-04 Eclipse Energy Systems, Inc. Electrochromic layer
CN1389534A (en) * 2001-06-04 2003-01-08 希毕克斯幻像有限公司 Components for sealing mini-cup in mfg. of roller-to-roller display device and method thereof
CN1482509A (en) * 2002-09-10 2004-03-17 ϣ An improved electrochromic or electrodeposition display and its manufacturing method
JP2007052109A (en) * 2005-08-16 2007-03-01 Dainippon Ink & Chem Inc ELECTROCHEMICAL DISPLAY ELEMENT AND METHOD FOR PRODUCING ELECTROCHEMICAL DISPLAY ELEMENT
CN101726956A (en) * 2009-11-18 2010-06-09 华东师范大学 Novel unit module for solar-powered self-driven electronic paper apparatus and method for preparing same

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