CN104347603A - Light emitting diode - Google Patents

Abstract

A light-emitting diode, including a casing, a first electrode, a second electrode, a first light-emitting chip, a second light-emitting chip, a wire, and a packaging body, the ends of the first electrode and the ends of the second electrode protrude out of the bonding area The wiring area of the first electrode and the wiring area of the second electrode are staggered through the insulating area, the first light-emitting chip is electrically connected to the first electrode and is electrically connected to the wiring area of the second electrode through a wire, and the second light-emitting chip is electrically connected to the wiring area of the second electrode. The second electrode is electrically connected to the bonding area of the first electrode through wires. The wire-bonding process of light-emitting diodes is more reliable, resulting in a higher product yield.

Description

led

technical field

The invention relates to a diode, in particular to a light emitting diode.

Background technique

As an emerging light source, light emitting diodes have been widely used in various applications. In order to improve the luminance, the industry has designed a light-emitting diode integrated with multiple chips, so that each chip emits light at the same time to output higher light intensity.

Existing multi-chip LEDs usually consist of a housing, two electrodes embedded in the housing, a plurality of chips mounted on the electrodes, and a package for encapsulating the chips. Each chip is connected with two electrodes by wire bonding. However, due to the large number of chips in the housing, the number of wires that need to be bonded is correspondingly large, and the area available for wire bonding on the electrode is limited, resulting in the occurrence of loose wires during the wire bonding process. And then affect the product yield.

Contents of the invention

Therefore, it is necessary to provide a light emitting diode with a higher yield.

A light-emitting diode, including a casing, a first electrode, a second electrode, a first light-emitting chip, a second light-emitting chip, a wire, and a packaging body, the ends of the first electrode and the ends of the second electrode protrude out of the bonding area The wiring area of the first electrode and the wiring area of the second electrode are staggered through the insulating area, the first light-emitting chip is electrically connected to the first electrode and is electrically connected to the wiring area of the second electrode through a wire, and the second light-emitting chip is electrically connected to the wiring area of the second electrode. The second electrode is electrically connected to the bonding area of the first electrode through wires.

Since the protruding two-wire bonding area is formed on the first electrode and the second electrode respectively, the area of the first electrode and the second electrode for bonding is increased, so the wires of the first light-emitting chip and the second light-emitting chip It can be conveniently and reliably punched on the area of the second bonding wire, thereby preventing the occurrence of loose bonding and improving the yield rate of the product.

The present invention will be further described below in conjunction with specific embodiments with reference to the accompanying drawings.

Description of drawings

FIG. 1 is a schematic cross-sectional view of a light emitting diode according to an embodiment of the present invention.

FIG. 2 is a top view of the light emitting diode of FIG. 1 .

FIG. 3 is similar to FIG. 1 , wherein the first light-emitting chip and the second light-emitting chip of the light-emitting diode are hidden.

FIG. 4 is a top view of FIG. 3 .

Description of main component symbols

led 10 case 20 base twenty two groove 220 gap 222 insulation area 224 Reflector twenty four Reflective surface 240 External area 300 junction area 302 Die bonding area 304 Wire area 306 first side 307 second side 308 inner edge 309 first electrode 32 second electrode 34 The first light-emitting chip 50 electrode 52 electrode 54 second light-emitting chip 60 electrode 62 electrode 64 wire 70 Package 80

The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings.

Detailed ways

Referring to FIGS. 1-2 , a light emitting diode 10 according to an embodiment of the invention is shown. The light-emitting diode 10 includes a casing 20, a first electrode 32 and a second electrode 34 inserted in the casing 20, a first light-emitting chip 50 mounted on the first electrode 32, and a first light-emitting chip 50 mounted on the second electrode 34. A second light-emitting chip 60 on the top, wires 70 connecting the first light-emitting chip 50 and the second light-emitting chip 60 , and a package body 80 covering the first light-emitting chip 50 and the second light-emitting chip 60 .

The casing 20 includes a base 22 and a reflective cup 24 formed on the base 22 . The casing 20 can be integrally formed of plastic material, or the base 22 and the reflective cup 24 can be formed separately first, and then the reflective cup 24 and the base 22 can be combined. The middle part of the bottom surface of the base 22 is recessed upwards to form a groove 220 , and the opposite sides of the bottom surface of the base 22 are recessed upwards to form two notches 222 respectively. The groove 220 and the two notches 222 are separated from each other and not communicated with each other. The reflective cup 24 is located above the base 22 and has a cavity in the middle of its top surface. The cavity extends from the top of the reflective cup 24 to the bottom of the reflective cup 24, and its diameter gradually decreases from top to bottom. Thus, a tapered reflective surface 240 is formed on the inner peripheral surface of the cavity. A metal reflective film (not shown) can be further formed on the reflective surface 240 to improve light reflective efficiency.

Please refer to FIGS. 3-4 together. The first electrode 32 and the second electrode 34 are respectively inserted at the left and right ends of the casing 20 . In this embodiment, both the first electrode 32 and the second electrode 34 are vertically long, and the length of the second electrode 34 is longer than that of the first electrode 32 , and the width is the same as that of the first electrode 32 . Each of the first electrode 32 and the second electrode 34 includes a surrounding area 300 , a bonding area 302 , a die-bonding area 304 and a wire bonding area 306 . The external connection area 300 is located outside the casing 20 , and is used for connecting with an external circuit structure (not shown) to introduce current into the first electrode 32 and the second electrode 34 . The bonding area 302 is sandwiched between the base 22 and the reflective cup 24 of the casing 20 , and is used for fixing the first electrode 32 and the second electrode 34 on the casing 20 . Both the die-bonding area 304 and the wire-bonding area 306 are embedded in the top surface of the base 22 and exposed to the cavity of the casing 20, wherein the crystal-bonding area 304 is used to carry the first light-emitting chip 50 and the second light-emitting chip 60, and wire bonding The area 306 is used for connecting the wire 70 . The widths of the circumscribed region 300 , the bonding region 302 and the die-bonding region 304 are the same, and the width of the wiring region 306 is smaller than that of the die-bonding region 304 . The wire bonding area 306 of the first electrode 32 protrudes from its die bonding area 304 toward the second electrode 34 , and the wire bonding area 306 of the second electrode 34 protrudes from its die bonding area 304 toward the first electrode 32 . The wire bonding area 306 includes a first side 307 and a second side 308 connected to the first side 307 . The first side 307 of the wire bonding area 306 is connected to the inner side 309 of the die-bonding area 304 and extends obliquely from the inner side 309 of the die-bonding area 304 toward the second side 308 . The second side 308 of each bonding area 306 of the first electrode 32 and the second electrode 34 is parallel to the inner side 309 of the die-bonding area 304 . The second side 308 of the wire bonding area 306 of the first electrode 32 is farther away from the first light-emitting chip 50 than the inner side 309 of the die bonding area 304, and the second side 308 of the wire bonding area 306 of the second electrode 34 is opposite The inner edge 309 of the die-bonding region 304 is further away from the second light-emitting chip 60 . The first side 307 of the wire bonding area 306 of the first electrode 32 is parallel to the first side 307 of the wire bonding area 306 of the second electrode 34 . The second side 308 of the wiring region 306 of the first electrode 32 is opposite to the inner side 309 of the die-bonding region 304 of the second electrode 34, and the second side 308 of the wiring region 306 of the second electrode 34 is opposite to the second side 309 of the bonding region 304 of the second electrode 34. The inner side 309 of the die-bonding region 304 of an electrode 32 is opposite. The base 22 forms an insulating region 224 between the two bonding regions 306 to insulate the first electrode 32 and the second electrode 34 . The insulating region 224 is roughly S-shaped, one side of which is connected to the first side 307, the second side 308 of the bonding region 306 of the first electrode 32 and the inner side 309 of the die-bonding region 304, and the other side is connected to the inner side 309 of the bonding region 304. The first side 307 , the second side 308 of the bonding area 306 of the second electrode 34 and the inner side 309 of the die-bonding area 304 are connected.

The first light-emitting chip 50 is fixed on the crystal-bonding region 304 of the first electrode 32 , and the second light-emitting chip 60 is fixed on the crystal-bonding region 304 of the second electrode 34 . The first light-emitting chip 50 and the second light-emitting chip 60 can be made of the same semiconductor material to emit light of the same color; they can also be made of different semiconductor materials to emit light of different colors. One electrode 52 of the first light-emitting chip 50 is connected to the die-bonding area 304 of the first electrode 32 through a wire 70 , and the other electrode 54 is connected to the bonding area 306 of the second electrode 34 through a wire 70 . One electrode 62 of the second light-emitting chip 60 is connected to the die-bonding area 304 of the second electrode 34 through a wire 70 , and the other electrode 64 is connected to the bonding area 306 of the first electrode 32 through a wire 70 . Since the additional wire bonding area 306 is added on the first electrode 32 and the second electrode 34, the area available for wire bonding on the first electrode 32 and the second electrode 34 increases, so the wire 70 can be fixed and connected conveniently and reliably. On the first electrode 32 and the second electrode 34 , thereby avoiding poor connection caused by too small bonding area, thereby improving the product yield rate of the light emitting diode 10 in the manufacturing process.

It can be understood that the wire bonding area 306 is only to increase the wire bonding area of the first electrode 32 and the second electrode 34, so that a convenient and reliable wire bonding process can be realized without too precise positioning during the wire bonding process, so , the wire 70 does not have to be placed exactly in the wire bonding area 306 , but can also be placed at the junction of the wire bonding area 306 and the die-bonding area 304 , or even in the die-bonding area 304 .

The first light-emitting chip 50 and the second light-emitting chip 60 in the above embodiment are both lateral conduction type light-emitting chips (that is, the two electrodes are on the same side of the light-emitting chip), and it can be understood that the two can also be vertical conduction type light-emitting chips. chip (that is, the two electrodes are on opposite sides of the light-emitting chip). Thus, the bottom electrodes of the first light-emitting chip 50 and the second light-emitting chip 60 can be directly bonded to the die-bonding regions 304 of the first electrode 32 and the second electrode 34 without using the wire 70 . In this case, both the first light-emitting chip 50 and the second light-emitting chip 60 only need one wire 70 to be electrically connected to the second electrode 34 and the first electrode 32 .

The package body 80 is filled in the cavity of the casing 20 and covers the first light emitting chip 50 , the second light emitting chip 60 and the wire 70 . The package body 80 can be made of transparent materials, such as glass, epoxy resin, silicone and so on. The package body 80 is used to protect the first light-emitting chip 50 and the second light-emitting chip 60 from being polluted or corroded by the external environment.

Claims (10)

1. A light-emitting diode, comprising a housing, a first electrode, a second electrode, a first light-emitting chip, a second light-emitting chip, a wire, and a packaging body, characterized in that: the ends of the first electrode and the ends of the second electrode face each other Protruding out of the wire bonding area, the wire bonding area of the first electrode and the wire bonding area of the second electrode are staggered through the insulating area, the first light-emitting chip is electrically connected to the first electrode and is electrically connected to the wire bonding area of the second electrode through a wire , the second light-emitting chip is electrically connected to the second electrode and is electrically connected to the bonding area of the first electrode through a wire. 2. The light emitting diode according to claim 1, characterized in that: both the first electrode and the second electrode include a crystal-bonding area, the first light-emitting chip is fixed on the crystal-bonding area of the first electrode, and the second light-emitting chip is fixed on the crystal-bonding area of the first electrode. on the crystal-bonded region of the second electrode. 3. The light emitting diode according to claim 2, wherein the wire bonding area is connected to the die bonding area. 4. The light-emitting diode according to claim 3, wherein the wire bonding area includes a first side connected to the inner side of the die-bonding area and a second side connected to the first side, and the wire bonding of the first electrode The second side of the region is directly opposite to the inner side of the second electrode's crystal-bonding region, and the second side of the second electrode's wire-bonding region is directly opposite to the inner side of the first electrode's crystal-bonding region. 5. The light emitting diode as claimed in claim 4, wherein the second side of the wire bonding area is parallel to the inner side of the die bonding area, and the first side is inclined relative to the second side. 6 . The light emitting diode as claimed in claim 5 , wherein the second side of the wire bonding area of the first electrode is parallel to the second side of the wire bonding area of the first electrode. 7 . The light emitting diode as claimed in claim 5 , wherein the second side of the wire bonding area of the first electrode is farther away from the first light emitting chip than the inner side of the die bonding area of the first electrode. 8. The light emitting diode as claimed in claim 4, wherein the insulating region is S-shaped. 9 . The light emitting diode as claimed in claim 2 , wherein both the first electrode and the second electrode include a bonding area inserted in the housing, and the die bonding area is located between the bonding area and the wiring area. 10 . The light emitting diode as claimed in claim 9 , wherein the first electrode and the second electrode further comprise a surrounding area outside the housing, and the junction area is connected to the surrounding area. 11 .