CN104300928A - Differential to Single-Ended Converter - Google Patents
Differential to Single-Ended Converter Download PDFInfo
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Abstract
Description
技术领域technical field
本发明的实施例是大致关于差动转单端转换器,尤指将一差动输入信号,转换成一单端输出信号的转换器。Embodiments of the present invention generally relate to differential-to-single-ended converters, and more particularly to converters that convert a differential input signal into a single-ended output signal.
背景技术Background technique
为了可以抵抗从电源线与半导体基底传来的噪声,集成电路中的内部信号可以用一差动模式(differential mode)来进行处理。举例来说,环式震荡器(ringoscillator)往往就是采用差动模式来产生时脉信号,可以避免共模(common mode)噪声对频率所产生的影响。In order to resist the noise transmitted from the power line and the semiconductor substrate, the internal signals in the integrated circuit can be processed in a differential mode. For example, a ring oscillator (ringoscillator) often uses a differential mode to generate a clock signal, which can avoid the influence of common mode noise on frequency.
然而,差动模式采用的差动信号需要至少两条信号传输线,比起单端信号所需的一条信号传输线,将会增加绕线的复杂度以及集成电路接脚数量(pincount)。因此,集成电路中大多数的逻辑电路的信号都采用单端模式(single-endmode),而需要高抗噪声的部分才采用差动模式。差动转单端转换器负责将一差动输入信号,转换成一单端输出信号,作为采用不同信号模式的电路中的桥接。However, the differential signal used in the differential mode requires at least two signal transmission lines, which will increase the complexity of the wiring and the pin count of the integrated circuit compared to one signal transmission line required by the single-ended signal. Therefore, the signals of most logic circuits in the integrated circuit adopt single-end mode (single-end mode), and the parts requiring high anti-noise adopt differential mode. The differential-to-single-ended converter is responsible for converting a differential input signal into a single-ended output signal, serving as a bridge in circuits using different signal modes.
图1显示一已知的差动转单端转换器10,其包含有两个NMOS晶体管N1与N2,以及两个PMOS晶体管P1与P2。差动转单端转换器10可以视为一已知的差动放大器(differential amplifier)。构成一差动信号的非反向信号S-NON与反向信号S-INV分别输入NMOS晶体管N1与N2的栅端(gate)。PMOS晶体管P1与P2则组合成一电流镜(current mirror),两者的共同控制端CON-O一起连接到PMOS晶体管P1的一漏端(drain)。NMOS晶体管N1与PMOS晶体管P1串接于电源线VDD与VSS之间。NMOS晶体管N2与PMOS晶体管P2,透过输出端OUT,串接于电源线VDD与VSS之间。输出端OUT产生单端信号S-ONE。FIG. 1 shows a known differential-to-single-ended converter 10, which includes two NMOS transistors N1 and N2, and two PMOS transistors P1 and P2. The differential-to-single-ended converter 10 can be regarded as a known differential amplifier. The non-inversion signal S-NON and the inversion signal S-INV constituting a differential signal are input to the gates of the NMOS transistors N1 and N2 respectively. The PMOS transistors P1 and P2 are combined to form a current mirror, and their common control terminal CON-O is connected to a drain of the PMOS transistor P1. The NMOS transistor N1 and the PMOS transistor P1 are connected in series between the power lines VDD and VSS. The NMOS transistor N2 and the PMOS transistor P2 are connected in series between the power lines VDD and VSS through the output terminal OUT. The output terminal OUT generates a single-ended signal S-ONE.
一个良好的差动转单端转换器要能随着差动信号的逻辑值切换而快速地变化其单端信号的逻辑值。此外,差动转单端转换器的电压转换速率(slew rate),也必须要快。如此,接收由环式震荡器所提供的差动时脉信号来产生单端时脉信号时,单端时脉信号的工作周期(duty cycle)就可以非常接近理想值50%。A good differential-to-single-ended converter should be able to quickly change the logic value of its single-ended signal as the logic value of the differential signal switches. In addition, the voltage slew rate of the differential-to-single-ended converter must also be fast. In this way, when receiving the differential clock signal provided by the ring oscillator to generate the single-ended clock signal, the duty cycle of the single-ended clock signal can be very close to the ideal value of 50%.
发明内容Contents of the invention
本发明的实施例提出一种差动转单端转换器,用以将一差动输入信号,转换成一单端输出信号。该差动转单端转换器包含有第一、第二、第三与第四晶体管,以及一电流源对。该第一晶体管和该第二晶体管被该差动输入信号所驱动。该第一晶体管和该第二晶体管具有耦接在一起的二第一传导端,以及没有耦接在一起的二第二传导端。该第三晶体管和该第四晶体管被该差动输入信号所驱动,分别与该第一晶体管和该第二晶体管串联在一起。该电流源对分别与该第三晶体管和该第四晶体管相串联,具有一共同控制端,耦接至该第一晶体管的该第二传导端。该第二晶体管的该第二传导端用以产生该单端输出信号。Embodiments of the present invention provide a differential-to-single-ended converter for converting a differential input signal into a single-ended output signal. The differential-to-single-ended converter includes first, second, third and fourth transistors, and a pair of current sources. The first transistor and the second transistor are driven by the differential input signal. The first transistor and the second transistor have two first conduction terminals coupled together, and two second conduction terminals not coupled together. The third transistor and the fourth transistor are driven by the differential input signal and are connected in series with the first transistor and the second transistor respectively. The current source pair is respectively connected in series with the third transistor and the fourth transistor, has a common control terminal coupled to the second conduction terminal of the first transistor. The second conducting end of the second transistor is used to generate the single-ended output signal.
本发明的实施例另提出一种信号转换方法,用以将一差动信号,转换成一单端信号。该差动信号包含有一非反向信号以及一反向信号。该方法包含有:提供一输出端,用以产生该单端信号;提供一电流源;依据该非反向信号来控制该电流源;以及依据该反向信号,导通一放电路径与一充电路径其中之一,并切断该放电路径与该充电路径其中之另一,其中,当该差动信号为一第一逻辑值时,该电流源透过该导通的充电路径对该信号输出端充电,当该差动信号为一第二逻辑值时,该输出端透过该导通的放电路径放电。Embodiments of the present invention further provide a signal conversion method for converting a differential signal into a single-ended signal. The differential signal includes a non-inversion signal and an inversion signal. The method includes: providing an output terminal for generating the single-ended signal; providing a current source; controlling the current source according to the non-reverse signal; and conducting a discharge path and a charge according to the reverse signal. One of the paths, and cut off the other one of the discharge path and the charge path, wherein, when the differential signal is a first logic value, the current source passes through the conduction charge path to the signal output terminal Charging, when the differential signal is a second logic value, the output end is discharged through the conducting discharge path.
附图说明Description of drawings
为让本发明的上述目的、特征和优点能更明显易懂,以下结合附图对本发明的具体实施方式作详细说明,其中:In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings, wherein:
图1显示一已知的差动转单端转换器。Figure 1 shows a known differential-to-single-ended converter.
图2与图3显示依据本发明所实施的二差动转单端转换器。FIG. 2 and FIG. 3 show two differential-to-single-ended converters implemented according to the present invention.
图4显示了一使用图2的差动转单端转换器20的一集成电路。FIG. 4 shows an integrated circuit using the differential-to-single-ended converter 20 of FIG. 2 .
图中元件标号说明:Explanation of component numbers in the figure:
10、20、30 差动转单端转换器10, 20, 30 Differential to single-ended converter
52 电压控制震荡器52 Voltage Controlled Oscillator
54 逻辑电路54 logic circuit
CON、CON-O 共同控制端CON, CON-O common control terminal
N1、N2、N11、N12 NMOS晶体管N1, N2, N11, N12 NMOS transistors
OUT 输出端OUT output terminal
P1、P2、P11、P12、P21、P22 PMOS晶体管P1, P2, P11, P12, P21, P22 PMOS transistors
S-INV 反向信号S-INV reverse signal
S-ONE 单端信号S-ONE single-ended signal
S-NON 非反向信号S-NON non-reverse signal
VCC、VDD、VSS 电源线VCC, VDD, VSS Power lines
具体实施方式Detailed ways
图2显示依据本发明的一实施例的差动转单端转换器20。如同图2所示,差动转单端转换器20具有两个NMOS晶体管N11与N12、以及四个PMOS晶体管P11、P12、P21、与P22。在一实施例中,NMOS晶体管N11与N12的元件尺寸大约一样;PMOS晶体管P11与P12的元件尺寸大约一样;PMOS晶体管P21与P22的元件尺寸大约一样。FIG. 2 shows a differential-to-single-ended converter 20 according to an embodiment of the present invention. As shown in FIG. 2 , the differential-to-single-ended converter 20 has two NMOS transistors N11 and N12 and four PMOS transistors P11 , P12 , P21 and P22 . In one embodiment, the element sizes of the NMOS transistors N11 and N12 are about the same; the element sizes of the PMOS transistors P11 and P12 are about the same; and the element sizes of the PMOS transistors P21 and P22 are about the same.
NMOS晶体管N11与N12作为一差动对,其栅端分别被差动信号的非反向信号S-NON与反向信号S-INV所驱动。NMOS晶体管N11与N12的源端一起耦接到电源线VSS,而NMOS晶体管N11与N12的漏端没有耦接在一起。NMOS晶体管N11与N12的操作状态会互补。换言之,当NMOS晶体管N11导通时,NMOS晶体管N12关闭,反之亦然。The NMOS transistors N11 and N12 are used as a differential pair, and their gate terminals are respectively driven by the non-inversion signal S-NON and the inversion signal S-INV of the differential signal. The sources of the NMOS transistors N11 and N12 are coupled to the power line VSS, while the drains of the NMOS transistors N11 and N12 are not coupled together. The operating states of the NMOS transistors N11 and N12 are complementary. In other words, when the NMOS transistor N11 is turned on, the NMOS transistor N12 is turned off, and vice versa.
PMOS晶体管P11与P12作为另一差动对,其栅端分别被差动信号的非反向信号S-NON与反向信号S-INV所驱动。如同图2所示的,PMOS晶体管P11与P12分别与NMOS晶体管N11与N12串联在一起。图2中,PMOS晶体管P11与P12的操作状态会互补。换言之,当PMOS晶体管P11导通时,PMOS晶体管P12关闭,反之亦然。The PMOS transistors P11 and P12 are another differential pair, and their gate terminals are respectively driven by the non-inversion signal S-NON and the inversion signal S-INV of the differential signal. As shown in FIG. 2 , the PMOS transistors P11 and P12 are connected in series with the NMOS transistors N11 and N12 respectively. In FIG. 2 , the operation states of the PMOS transistors P11 and P12 are complementary. In other words, when the PMOS transistor P11 is turned on, the PMOS transistor P12 is turned off, and vice versa.
PMOS晶体管P21与P22可以视为一电流源对,其栅端连接在一起,作为一共同控制端CON,连接到NMOS晶体管N11的漏端,也是PMOS晶体管P11的漏端。PMOS晶体管P21与P22分别与PMOS晶体管P11与P12串联在一起。PMOS晶体管P21与P22的源端一同耦接到电源线VDD。The PMOS transistors P21 and P22 can be regarded as a pair of current sources, the gate terminals of which are connected together as a common control terminal CON, which is connected to the drain terminal of the NMOS transistor N11, which is also the drain terminal of the PMOS transistor P11. The PMOS transistors P21 and P22 are connected in series with the PMOS transistors P11 and P12 respectively. Source terminals of the PMOS transistors P21 and P22 are coupled to the power line VDD.
NMOS晶体管N12的漏端,也是PMOS晶体管P12的漏端,作为一信号输出端OUT,其可以产生单端输出信号S-ONE。The drain terminal of the NMOS transistor N12 is also the drain terminal of the PMOS transistor P12, which serves as a signal output terminal OUT, which can generate a single-ended output signal S-ONE.
以下的操作将以电源线VDD为1.1V,电源线VSS为0V,而非反向信号S-NON与反向信号S-INV的电压变化没有轨对轨(rail-to-rail),只有在0V到0.6V之间变化,来作为例子,但不是用来限制本发明。当非反向信号S-NON与反向信号S-INV的电压分别为0V与0.6V时,差动信号的逻辑值为“0”;反之,当非反向信号S-NON与反向信号S-INV的电压分别为0.6V与0V时,差动信号的逻辑值为“1”。In the following operations, the power line VDD is 1.1V, and the power line VSS is 0V. There is no rail-to-rail (rail-to-rail) voltage change between the non-inverted signal S-NON and the inverted signal S-INV. 0V to 0.6V is used as an example, but not to limit the present invention. When the voltages of the non-reverse signal S-NON and the reverse signal S-INV are 0V and 0.6V respectively, the logic value of the differential signal is "0"; otherwise, when the non-reverse signal S-NON and the reverse signal When the voltages of S-INV are 0.6V and 0V respectively, the logic value of the differential signal is "1".
当差动信号为“0”时,NMOS晶体管N11与PMOS晶体管P12关闭,NMOS晶体管N12与PMOS晶体管P11导通。因此,信号输出端OUT被导通的NMOS晶体管N12所提供的放电路径拉低为0V,单端输出信号S-ONE的逻辑值为“0”。此时,共同控制端CON等同连接到PMOS晶体管P21的漏端,所以PMOS晶体管P21与P22构成一等效的电流镜。PMOS晶体管P21与P22分别做为两个充电电流源,对PMOS晶体管P21与P22的二漏端充电,所以此二漏端以及共同控制端CON的电压可以大约为1V或是略低于1V。When the differential signal is "0", the NMOS transistor N11 and the PMOS transistor P12 are turned off, and the NMOS transistor N12 and the PMOS transistor P11 are turned on. Therefore, the signal output terminal OUT is pulled down to 0V by the discharge path provided by the turned-on NMOS transistor N12, and the logic value of the single-ended output signal S-ONE is "0". At this time, the common control terminal CON is equivalently connected to the drain terminal of the PMOS transistor P21, so the PMOS transistors P21 and P22 form an equivalent current mirror. The PMOS transistors P21 and P22 are respectively used as two charging current sources to charge the two drains of the PMOS transistors P21 and P22, so the voltages of the two drains and the common control terminal CON can be about 1V or slightly lower than 1V.
当差动信号从“0”要转换成“1”时,非反向信号S-NON从0V开始上升,而反向信号S-INV从0.6V开始下降。一旦非反向信号S-NON的电压高于反向信号S-INV,NMOS晶体管N11与PMOS晶体管P12转态为导通,NMOS晶体管N12与PMOS晶体管P11转态为关闭。PMOS晶体管P21此充电电流源,因为PMOS晶体管P11的关闭,所以无法对共同控制端CON充电。因此,共同控制端CON被导通的NMOS晶体管N11所提供的一放电路径,快速地放电到0V。NMOS晶体管N12的关闭,等于切断了信号输出端OUT到电源线VSS的放电路径。此时,PMOS晶体管P22当成充电电流源,透过导通的PMOS晶体管P12所提供的充电路径,对信号输出端OUT充电。因为共同控制端CON的电压为0V,PMOS晶体管P22的栅源电压(gate-to-source voltage)将会是-1V,也就是电源线VDD与电源线VSS供电的系统下的最大可能负值,所以PMOS晶体管P22将以最大充电电流对信号输出端OUT快速充电。最后使单端输出信号S-ONE的电压为1V,逻辑值为“1”。When the differential signal changes from "0" to "1", the non-inversion signal S-NON starts to rise from 0V, and the inversion signal S-INV starts to fall from 0.6V. Once the voltage of the non-inversion signal S-NON is higher than the inversion signal S-INV, the NMOS transistor N11 and the PMOS transistor P12 are turned on, and the NMOS transistor N12 and the PMOS transistor P11 are turned off. The charging current source of the PMOS transistor P21 cannot charge the common control terminal CON because the PMOS transistor P11 is turned off. Therefore, the common control terminal CON is rapidly discharged to 0V through a discharge path provided by the turned-on NMOS transistor N11 . Turning off the NMOS transistor N12 is equivalent to cutting off the discharge path from the signal output terminal OUT to the power supply line VSS. At this time, the PMOS transistor P22 acts as a charging current source, and charges the signal output terminal OUT through the charging path provided by the turned-on PMOS transistor P12 . Because the voltage of the common control terminal CON is 0V, the gate-to-source voltage of the PMOS transistor P22 will be -1V, which is the maximum possible negative value under the system powered by the power line VDD and the power line VSS, Therefore, the PMOS transistor P22 will quickly charge the signal output terminal OUT with the maximum charging current. Finally, the voltage of the single-ended output signal S-ONE is 1V, and the logic value is "1".
当差动信号从“1”要转换成“0”时,非反向信号S-NON从0.6V开始下降,而反向信号S-INV从0V开始上升。一旦非反向信号S-NON的电压低于反向信号S-INV,NMOS晶体管N12与PMOS晶体管P11转态为导通,NMOS晶体管N11与PMOS晶体管P12转态为关闭。此时,PMOS晶体管P12所提供的充电路径等于被切断。导通的NMOS晶体管N12则提供一放电路径,对信号输出端OUT放电。所以单端输出信号S-ONE的电压会快速地从1V降到0V,逻辑值成为“0”。关闭的NMOS晶体管N11使共同控制端CON离耦于电源线VSS,即断开与电源线VSS的耦接。PMOS晶体管P21此充电电流源,会透过导通的PMOS晶体管P11,对共同控制端CON充电到约1V-Vthp,此处的Vthp为PMOS晶体管P21的临界电压(threshold voltage)。而PMOS晶体管P22此充电电流源会将PMOS晶体管P22的漏端充电到约1V后停止。When the differential signal changes from "1" to "0", the non-inversion signal S-NON starts to drop from 0.6V, while the inversion signal S-INV starts to rise from 0V. Once the voltage of the non-inversion signal S-NON is lower than the inversion signal S-INV, the NMOS transistor N12 and the PMOS transistor P11 are turned on, and the NMOS transistor N11 and the PMOS transistor P12 are turned off. At this time, the charging path provided by the PMOS transistor P12 is cut off. The turned-on NMOS transistor N12 provides a discharge path to discharge the signal output terminal OUT. Therefore, the voltage of the single-ended output signal S-ONE will quickly drop from 1V to 0V, and the logic value becomes "0". Turning off the NMOS transistor N11 decouples the common control terminal CON from the power line VSS, that is, disconnects it from the power line VSS. The charging current source of the PMOS transistor P21 will charge the common control terminal CON to about 1V-Vthp through the turned-on PMOS transistor P11, where Vthp is the threshold voltage of the PMOS transistor P21. The charging current source of the PMOS transistor P22 will charge the drain terminal of the PMOS transistor P22 to about 1V and then stop.
在图2的实施例中,非反向信号S-NON以及反向信号S-INV的电压摆幅(voltage swing)为0.6V,小于单端输出信号S-ONE的电压摆幅(其为1V)。非反向信号S-NON、反向信号S-INV与单端输出信号S-ONE的低逻辑电位都是0V。非反向信号S-NON与反向信号S-INV的高逻辑电位是0.6V,而单端输出信号S-ONE的高逻辑电位是1V。In the embodiment of FIG. 2, the voltage swing (voltage swing) of the non-inverting signal S-NON and the inverting signal S-INV is 0.6V, which is smaller than the voltage swing of the single-ended output signal S-ONE (which is 1V ). The low logic levels of the non-inversion signal S-NON, the inversion signal S-INV, and the single-ended output signal S-ONE are all 0V. The high logic levels of the non-inversion signal S-NON and the inversion signal S-INV are 0.6V, and the high logic level of the single-ended output signal S-ONE is 1V.
只要适当的设计,图2中的单端输出信号S-ONE下降转换速率以及上升转换速率都可以相当的快速,高过图1中的单端输出信号S-ONE的下降转换速率以及上升转换速率。当图2中的差动信号从“1”要转换成“0”,因为即使PMOS晶体管P22所提供的充电电流暂时不为0,反向信号S-INV会先切断PMOS晶体管P12所提供的充电路径,使信号输出端OUT单单被NMOS晶体管N12放电而快速下降。当差动信号从“0”要转换成“1”,因为反向信号S-INV切断NMOS晶体管N12所提供的放电路径,且PMOS晶体管P22透过PMOS晶体管P12所提供的充电路径,对信号输出端OUT的充电电流为最大值,所以单端输出信号S-ONE的上升转换速率会相当快速。With proper design, the falling slew rate and rising slew rate of the single-ended output signal S-ONE in Figure 2 can be quite fast, higher than the falling slew rate and rising slew rate of the single-ended output signal S-ONE in Figure 1 . When the differential signal in Figure 2 is converted from "1" to "0", because even if the charging current provided by the PMOS transistor P22 is temporarily not 0, the reverse signal S-INV will first cut off the charging current provided by the PMOS transistor P12 path, so that the signal output terminal OUT is only discharged by the NMOS transistor N12 and falls rapidly. When the differential signal is converted from "0" to "1", because the inversion signal S-INV cuts off the discharge path provided by the NMOS transistor N12, and the PMOS transistor P22 passes through the charging path provided by the PMOS transistor P12, the signal output The charging current at the terminal OUT is the maximum value, so the rising slew rate of the single-ended output signal S-ONE will be quite fast.
当图2中的差动信号切换时,对信号输出端OUT的充电路径与放电路径会被快速地形成或是切断,所以信号输出端OUT上的单端输出信号S-ONE对差动信号的反应速度,也会是相当地快。When the differential signal in Figure 2 is switched, the charging path and discharging path to the signal output terminal OUT will be quickly formed or cut off, so the single-ended output signal S-ONE on the signal output terminal OUT has an effect on the differential signal The reaction speed will also be quite fast.
图1中的单端输出信号S-ONE的下降转换速率以及上升转换速率,相较于图2中结果,理论上会比较慢。举例来说,当图1中的差动信号从“1”要转换成“0”时,虽然NMOS晶体管N2与N1分别快速的导通与关闭,但是信号输出端OUT不会一开始就快速的下降,必须等到共同控制端CON-O被充电到一定程度,直到PMOS晶体管P2所提供的充电电流低于NMOS晶体管N2所提供的放电电流,信号输出端OUT的电压才会开始”慢慢地”下降。所以图1中的单端输出信号S-ONE的反应速度与下降转换速率都会比较小。The falling slew rate and rising slew rate of the single-ended output signal S-ONE in Figure 1 are theoretically slower than those in Figure 2. For example, when the differential signal in FIG. 1 is to be converted from "1" to "0", although the NMOS transistors N2 and N1 are turned on and off quickly respectively, the signal output terminal OUT will not be turned on quickly at the beginning. Decline, must wait until the common control terminal CON-O is charged to a certain extent, until the charging current provided by the PMOS transistor P2 is lower than the discharge current provided by the NMOS transistor N2, the voltage of the signal output terminal OUT will start to "slowly" decline. Therefore, the response speed and falling slew rate of the single-ended output signal S-ONE in Fig. 1 will be relatively small.
类似的,而当图1中的差动信号从“0”要转换成“1”时,虽然NMOS晶体管N1与N2分别快速的导通与关闭,但共同控制端CON-O无法低到0V,因为受限于PMOS晶体管P1所形成的MOS二极管而箝制。所以PMOS晶体管P2对信号输出端OUT的充电电流,无法到达PMOS晶体管P2的最大可能电流。因此,图1中单端输出信号S-ONE的上升转换速率也会受到相当的限制。Similarly, when the differential signal in Figure 1 is to be converted from "0" to "1", although the NMOS transistors N1 and N2 are quickly turned on and off respectively, the common control terminal CON-O cannot be lowered to 0V, Clamped because it is limited by the MOS diode formed by PMOS transistor P1. Therefore, the charging current of the PMOS transistor P2 to the signal output terminal OUT cannot reach the maximum possible current of the PMOS transistor P2. Therefore, the rising slew rate of the single-ended output signal S-ONE in FIG. 1 is also quite limited.
正因为图2中单端输出信号S-ONE对差动信号(由非反向信号S-NON与反向信号S-INV所构成)的反应速度非常快,而且单端输出信号S-ONE的上升/下降转换速率都相当的高,所以当差动信号的工作周期是50%时,只要适当的设计,图2中单端输出信号S-ONE就可以容易得到大致不随半导体制程参数飘移的50%工作周期。Because the single-ended output signal S-ONE in Figure 2 responds very quickly to the differential signal (consisting of the non-inverted signal S-NON and the inverted signal S-INV), and the single-ended output signal S-ONE The rising/falling conversion rate is quite high, so when the duty cycle of the differential signal is 50%, as long as the proper design is made, the single-ended output signal S-ONE in Fig. %Working period.
图3显示依据本发明的另一实施例的差动转单端转换器30。图3中的差动转单端转换器30与图2中的差动转单端转换器20,彼此为互补关系。差动转单端转换器30的操作与原理,可以为具有一般电路设计知识者,依据图2的教导与说明而类推了解,故不再累述。FIG. 3 shows a differential-to-single-ended converter 30 according to another embodiment of the present invention. The differential-to-single-ended converter 30 in FIG. 3 and the differential-to-single-ended converter 20 in FIG. 2 are complementary to each other. The operation and principle of the differential-to-single-ended converter 30 can be understood by analogy for those with general circuit design knowledge based on the teaching and description of FIG. 2 , so it will not be repeated here.
图4显示了一使用图2的差动转单端转换器20的一集成电路。电压控制震荡器52可以产生一时脉信号,其经过两个以0.6V的电源线VCC与0V电源线VSS供电的反向器处理后,产生非反向信号S-NON与反向信号S-INV,送入差动转单端转换器20,如同图4所示。差动转单端转换器20产生50%工作周期的单端输出信号S-ONE,经过两个以1V电源线VDD与0V电源线VSS供电的反向器加强其驱动力后,送入逻辑电路54。FIG. 4 shows an integrated circuit using the differential-to-single-ended converter 20 of FIG. 2 . The voltage-controlled oscillator 52 can generate a clock signal, which is processed by two inverters powered by the 0.6V power line VCC and the 0V power line VSS to generate a non-inverted signal S-NON and an inverted signal S-INV , sent to the differential-to-single-ended converter 20, as shown in FIG. 4 . The differential-to-single-ended converter 20 generates a 50% duty cycle single-ended output signal S-ONE, which is sent to the logic circuit after being strengthened by two inverters powered by 1V power line VDD and 0V power line VSS 54.
虽然本发明已以较佳实施例揭示如上,然其并非用以限定本发明,任何本领域技术人员,在不脱离本发明的精神和范围内,当可作些许的修改和完善,因此本发明的保护范围当以权利要求书所界定的为准。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person skilled in the art may make some modifications and improvements without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection should be defined by the claims.
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| CN106330118A (en) * | 2015-07-01 | 2017-01-11 | 日升微器件公司 | Scaleable RF tuned low noise amplifier |
| CN115378380A (en) * | 2021-05-19 | 2022-11-22 | 南亚科技股份有限公司 | Single-ended receiver |
| US11996838B2 (en) | 2021-11-18 | 2024-05-28 | AUO Corporation | Driving device and driving method |
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| US11996838B2 (en) | 2021-11-18 | 2024-05-28 | AUO Corporation | Driving device and driving method |
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Effective date of registration: 20191218 Address after: No.1, Duhang 1st Road, Hsinchu City, Hsinchu Science Park, Taiwan, China Patentee after: MediaTek.Inc Address before: Taiwan Hsinchu County Tai Yuan Street China jhubei City, No. 26 4 floor 1 Patentee before: MStar Semiconductor Co., Ltd. |