CN104241743A - Millimeter wave filter adopting frequency selectivity coupling for suppressing fundamental waves - Google Patents
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Abstract
本发明公开一种采用频率选择性耦合来抑制基波的毫米波滤波器,包括上层微带结构,中间层介质基板和下层接地金属板。滤波器由两个谐振器和两条馈电线组成,两个谐振器左右对称,并且馈电线也呈左右对称结构。每个谐振器包括一条两端开路的主传输微带线、一条加载在半波长主传输线中点的开路枝节线。这条中心加载谐振器有两个谐振模式或者说谐振路径,其中基波的谐振路径是较长半波长谐振通路,由于引入了对称式的馈电方式,产生了选择性电磁耦合,从而抑制了基波的通带,而只保留了高通带。本发明具有在30G频段容易加工制造,阻带宽,通带选择性好,不附带多余电路的特点。
The invention discloses a millimeter wave filter which uses frequency selective coupling to suppress the fundamental wave, which comprises an upper microstrip structure, a middle dielectric substrate and a lower ground metal plate. The filter is composed of two resonators and two feed lines, the two resonators are left and right symmetrical, and the feed lines are also left and right symmetrical. Each resonator includes a main transmission microstrip line open at both ends, and an open stub line loaded at the midpoint of the half-wavelength main transmission line. This center-loaded resonator has two resonant modes or resonant paths. The resonant path of the fundamental wave is a longer half-wavelength resonant path. Due to the introduction of a symmetrical feeding method, selective electromagnetic coupling is generated, thereby suppressing The passband of the fundamental wave, while only the high passband is retained. The invention has the characteristics of easy processing and manufacturing in the 30G frequency band, wide band resistance, good selectivity of the pass band and no redundant circuits.
Description
技术领域 technical field
本发明涉及一种毫米波带通滤波器,特别是涉及一种抑制基波的,尺寸较大的,可用PCB制版技术实现的采用频率选择性耦合来抑制基波的毫米波滤波器。 The invention relates to a millimeter-wave band-pass filter, in particular to a millimeter-wave filter that suppresses the fundamental wave, has a large size, and can be realized by PCB plate-making technology and adopts frequency selective coupling to suppress the fundamental wave.
背景技术 Background technique
随着毫米波工程的发展,毫米波的应用正在向着更高频段发展,同时也遇到了新的问题,如更高的频率意味着更小的电路尺寸,使得电路加工难度大,制造成本高。因此对成本较低的,尺寸较大的,易于加工的毫米波滤波器有着较为迫切的需求。 With the development of millimeter wave engineering, the application of millimeter wave is developing towards higher frequency bands, and new problems have also been encountered. For example, higher frequency means smaller circuit size, which makes circuit processing difficult and high manufacturing cost. Therefore, there is an urgent demand for millimeter-wave filters with lower cost, larger size, and easier processing.
目前许多研究者已经将许多种技术用于毫米波带通滤波器的设计,其中有几种典型的方法。第一种方法是采用具有多层结构和高制造精度的低温共烧陶瓷技术(LTCC)设计毫米波带通滤波器,如S. W. Wong, Z. N. Chen, and Q. X. Chu, (2012), ‘Microstrip-line millimeter-wave bandpass filter using interdigital coupled-line’, Electron Lett., 48, pp. 224-225.。第二种方法是采用COMS(bulk complementary metal oxide semiconductor)设计毫米波带通滤波器,如使用慢波结构的B. Yang, E. Skafidas, and R. J. Evans, (2012), ‘Slow-wave slot microstrip transmission line and bandpass filter for compact millimeter-wave integrated circuits on bulk complementary metal oxide semiconductor’, IET Microw. Antennas Propag., 6, pp. 1548-1555.和H. -R. Lin, C. -Y. Hsu, H. -R. Chuang, and C. -Y. Chen, (2012), ‘A 77-GHz miniaturized slow-wave SIR bandpass filter fabricated using 0.18-um standard CMOS technology’, Microwave Opt Technol Lett., 54, pp. 1063–1066。以及使用阶跃阻抗谐振器的S. -C. Chang, Y. -M. Chen, S. -F. Chang, Y. -H. Jeng, C. -L. Wei, C. -H. Huang, and C. -P. Jeng, (2010), ‘Compact millimeter-wave CMOS bandpass filters using grounded pedestal stepped-impedance technique’, IEEE Trans Microw Theory Tech., 58, pp. 3850-3858。第三种方法是采用介质集成波导技术(SIW)、集成无源器件技术(IPD)设计毫米波带通滤波器,如C. Y. Hsiao, S. S. H. Hsu, and D. C. Chang, (2011), ‘A compact V-band bandpass filter in IPD technology’, IEEE Microw Wireless Compon. Lett., 21, pp. 531-533.以及X. P. Chen, and K. Wu, (2012) ‘Self-packaged millimeter-wave substrate integrated waveguide filter with asymmetric frequency response’, IEEE Trans Compon Package Manufact Tech., 2, pp. 775-782。本发明采用的PCB制版技术可实现的平面微带线结构。 At present, many researchers have used many techniques for the design of millimeter-wave bandpass filters, among which there are several typical methods. The first method is to design millimeter-wave bandpass filters using low-temperature co-fired ceramic technology (LTCC) with multilayer structure and high manufacturing precision, such as S. W. Wong, Z. N. Chen, and Q. X. Chu, (2012), 'Microstrip-line millimeter-wave bandpass filter using interdigital coupled-line', Electron Lett. , 48, pp. 224-225. The second method is to use COMS (bulk complementary metal oxide semiconductor) to design millimeter-wave bandpass filters, such as B. Yang, E. Skafidas, and R. J. Evans, (2012), 'Slow-wave slot microstrip using a slow-wave structure transmission line and bandpass filter for compact millimeter-wave integrated circuits on bulk complementary metal oxide semiconductor', IET Microw. Antennas Propag ., 6, pp. 1548-1555. and H. -R. Lin, C. -Y. Hsu, H. -R. Chuang, and C. -Y. Chen, (2012), 'A 77-GHz miniaturized slow-wave SIR bandpass filter fabricated using 0.18-um standard CMOS technology', Microwave Opt Technol Lett ., 54, pp . 1063–1066. and S. -C. Chang, Y. -M. Chen, S. -F. Chang, Y. -H. Jeng, C. -L. Wei, C. -H. Huang, using step impedance resonators, and C. -P. Jeng, (2010), 'Compact millimeter-wave CMOS bandpass filters using grounded pedestal stepped-impedance technique', IEEE Trans Microw Theory Tech ., 58, pp. 3850-3858. The third method is to use dielectric integrated waveguide technology (SIW) and integrated passive device technology (IPD) to design millimeter-wave bandpass filters, such as C. Y. Hsiao, S. S. H. Hsu, and D. C. Chang, (2011), 'A compact V- band bandpass filter in IPD technology', IEEE Microw Wireless Compon. Lett ., 21, pp. 531-533. and X. P. Chen, and K. Wu, (2012) 'Self-packaged millimeter-wave substrate integrated waveguide filter with asymmetric frequency response', IEEE Trans Compon Package Manufact Tech ., 2, pp. 775-782. The planar microstrip line structure can be realized by the PCB plate-making technology adopted in the present invention.
现阶段,毫米波带通滤波器已经引起了很多的关注。如J. –H. Lee, S. Pinel, J. Laskar, and M. M. Tentzeris, (2007), ‘Design and development of advanced cavity-based dual-mode filters using low-temperature co-fired ceramic technology for V-band gigabit wireless systems’, IEEE Trans Microw Theory Tech., 55, pp. 1869-1879。但它采用了LTCC技术,加工难度较大,制作成本较高,为了解决这个问题,本发明提供新的实现大尺寸的抑制基波的毫米波带通滤波器。 At this stage, mmWave bandpass filters have attracted a lot of attention. Such as J. –H. Lee, S. Pinel, J. Laskar, and M. M. Tentzeris, (2007), 'Design and development of advanced cavity-based dual-mode filters using low-temperature co-fired ceramic technology for V-band gigabit wireless systems', IEEE Trans Microw Theory Tech ., 55, pp. 1869-1879. However, it adopts LTCC technology, which is difficult to process and high in production cost. In order to solve this problem, the present invention provides a new millimeter-wave bandpass filter capable of suppressing the fundamental wave with a large size.
the
发明内容 Contents of the invention
本发明的目的在于克服现有技术存在的上述不足,提供一种采用频率选择性耦合来抑制基波的毫米波带通滤波器。 The object of the present invention is to overcome the above-mentioned shortcomings in the prior art, and provide a millimeter-wave bandpass filter that uses frequency selective coupling to suppress the fundamental wave.
为实现本发明目的,本发明所采用的技术方案如下: For realizing the object of the present invention, the technical scheme adopted in the present invention is as follows:
一种采用频率选择性耦合来抑制基波的毫米波滤波器,包括上层微带结构、中间层介质基板和下层接地金属板;上层微带结构附着在中间层介质基板上表面,下层接地金属板附着在中间层介质基板下表面;上层微带结构包括两条馈电线和两个谐振器;两个谐振器呈中轴对称,并且结构相同,谐振器工作在低通带时等效为半波长谐振器,工作在高通带时也等效为半波长谐振器,但是两条谐振路径是不同的,所述滤波器的其中一条馈电线在输入端口处分成两路,分别对称地沿着中心加载谐振器的外边缘进行耦合馈电,另外一条馈电线在输出端口处分成两路,分别对称地沿着另一个中心加载谐振器进行耦合馈电。 A millimeter-wave filter that uses frequency selective coupling to suppress the fundamental wave, including an upper microstrip structure, an intermediate dielectric substrate, and a lower grounded metal plate; the upper microstrip structure is attached to the upper surface of the intermediate dielectric substrate, and the lower grounded metal plate Attached to the lower surface of the intermediate dielectric substrate; the upper microstrip structure includes two feeders and two resonators; the two resonators are centrally symmetrical and have the same structure, and the resonators are equivalent to half a wavelength when they work in the low passband The resonator is also equivalent to a half-wavelength resonator when it works in the high-pass band, but the two resonance paths are different. One of the feed lines of the filter is divided into two at the input port, and they are loaded symmetrically along the center The outer edge of the resonator is coupled and fed, and the other feed line is divided into two paths at the output port, and the coupled feed is carried out symmetrically along the other center-loaded resonator.
上述采用频率选择性耦合来抑制基波的毫米波滤波器,谐振器包括一个半波长主传输线和一个加载在该谐振器中心的开路枝节线,其中半波长主传输微带线部分由第四微带线、第五微带线、第六微带线、第八微带线和第九微带线依次连接而成,第四微带线的一端和第九微带线的一端都开路,另一端分别与微带线的两端相连,加载在第六微带线中心的开路枝节线是第七微带线,它一端连接在半波长主传输线的中间,另一端开路。谐振器工作在低通带的时候谐振路径是第四微带线、第五微带线、第六微带线、第八微带线、第九微带线所组成的对应低通带的半波长路径,工作在高通带的时候谐振路径是第四微带线、第五微带线、第六微带线的一半和第七微带线所组成的对应高频率的半波长路径。 The above-mentioned millimeter-wave filter that uses frequency selective coupling to suppress the fundamental wave, the resonator includes a half-wavelength main transmission line and an open-circuit stub line loaded at the center of the resonator, wherein the half-wavelength main transmission microstrip line is partly composed of a fourth microstrip The strip line, the fifth microstrip line, the sixth microstrip line, the eighth microstrip line and the ninth microstrip line are connected in sequence, one end of the fourth microstrip line and one end of the ninth microstrip line are open, and the other One end is respectively connected with the two ends of the microstrip line, and the open stub line loaded in the center of the sixth microstrip line is the seventh microstrip line, one end of which is connected in the middle of the half-wavelength main transmission line, and the other end is open. When the resonator works in the low passband, the resonant path is half of the corresponding low passband formed by the fourth microstrip line, the fifth microstrip line, the sixth microstrip line, the eighth microstrip line, and the ninth microstrip line. The wavelength path, when working in the high-pass band, the resonant path is the half-wavelength path corresponding to the high frequency composed of the fourth microstrip line, the fifth microstrip line, half of the sixth microstrip line and the seventh microstrip line.
上述采用频率选择性耦合来抑制基波的毫米波滤波器,每个谐振器的半波长主传输线的长度L的电长度基波谐振频率f 1对应的波长的一半; L/2+L 1为所述双带通滤波器的高谐振频率f 2对应的波长λ的一半,L 1为第七微带线的长度;半波长主传输微带线长度L为第四微带线、第五微带线、第六微带线、第八微带线和第九微带线的长度之和。 The above millimeter-wave filter that uses frequency selective coupling to suppress the fundamental wave, the electrical length L of the half-wavelength main transmission line of each resonator is half the wavelength corresponding to the fundamental resonant frequency f 1 ; L/2 + L 1 is Half of the wavelength λ corresponding to the high resonance frequency f of the double bandpass filter, L1 is the length of the seventh microstrip line; the length L of the half-wavelength main transmission microstrip line is the fourth microstrip line, the fifth microstrip line The sum of the lengths of the strip line, the sixth microstrip line, the eighth microstrip line and the ninth microstrip line.
上述采用频率选择性耦合来抑制基波的毫米波滤波器,谐振器的半波长主传输线部分由第四微带线、第五微带线、第六微带线、第八微带线和第九微带线依次连接而成,两个谐振器关于中轴对称,呈两个背靠背的E型结构。 In the millimeter-wave filter that uses frequency selective coupling to suppress the fundamental wave, the half-wavelength main transmission line of the resonator is composed of the fourth microstrip line, the fifth microstrip line, the sixth microstrip line, the eighth microstrip line and the fourth microstrip line. Nine microstrip lines are connected in sequence, and the two resonators are symmetrical about the central axis, forming two back-to-back E-shaped structures.
上述采用频率选择性耦合来抑制基波的毫米波滤波器,所述其中一条馈电线由第一微带线、第二微带线、第三微带线、第十九微带线组成,第一微带线一端开路,另一端与第二微带线一端相连,第二微带线另一端与第三微带线一端相连,第三微带线另一端开路,第十九微带线一端开路,另一端垂直搭接在第二微带线的中心;另一条馈电线由第十微带线、第十一微带线、第十二微带线、第二十微带线组成,第十微带线一端开路,另一端与第十一微带线一端相连,第十一微带线另一端与第十二微带线一端相连,第十二微带线另一端开路,第二十微带线一端开路,另一端垂直搭接在第十一微带线上的中心;接在输入端口之后的馈电线分成两路,其中一路包括第一微带线和第二微带线的一半;另一路包括第三微带线和第二微带线的另一半;其中第一微带线与半波长主传输线的第八微带线之间有0.1±0.05 mm的间隙来实现平行耦合;第三微带线与半波长主传输线的第五微带线之间有0.1±0.05 mm的间隙来实现平行耦合;第二微带线和第四微带线以及第九微带线之间有0.1±0.05 mm的间隙来实现平行耦合。 In the above-mentioned millimeter wave filter that uses frequency selective coupling to suppress the fundamental wave, one of the feed lines is composed of the first microstrip line, the second microstrip line, the third microstrip line, and the nineteenth microstrip line. One end of a microstrip line is open, the other end is connected to one end of the second microstrip line, the other end of the second microstrip line is connected to one end of the third microstrip line, the other end of the third microstrip line is open, and one end of the nineteenth microstrip line The other end is vertically lapped at the center of the second microstrip line; the other feeder line is composed of the tenth microstrip line, the eleventh microstrip line, the twelfth microstrip line, and the twentieth microstrip line. One end of the tenth microstrip line is open, the other end is connected to one end of the eleventh microstrip line, the other end of the eleventh microstrip line is connected to one end of the twelfth microstrip line, the other end of the twelfth microstrip line is open circuited, One end of the microstrip line is open, and the other end is vertically lapped at the center of the eleventh microstrip line; the feeder line connected after the input port is divided into two paths, one of which includes half of the first microstrip line and the second microstrip line ; The other way includes the third microstrip line and the other half of the second microstrip line; wherein there is a gap of 0.1 ± 0.05 mm between the first microstrip line and the eighth microstrip line of the half-wavelength main transmission line to realize parallel coupling; There is a gap of 0.1±0.05 mm between the third microstrip line and the fifth microstrip line of the half-wavelength main transmission line to realize parallel coupling; there is a gap between the second microstrip line, the fourth microstrip line and the ninth microstrip line A gap of 0.1±0.05 mm is used to achieve parallel coupling.
上述采用频率选择性耦合来抑制基波的毫米波滤波器,所述接在输出端口之前的馈电线分成两路,一路包括第十微带线和第十一微带线的一半;另一路包括第十二微带线与第十一微带线的另一半。 In the above-mentioned millimeter-wave filter that uses frequency selective coupling to suppress the fundamental wave, the feed line connected before the output port is divided into two paths, one path includes half of the tenth microstrip line and the eleventh microstrip line; the other path includes The other half of the twelfth microstrip line and the eleventh microstrip line.
上述采用频率选择性耦合来抑制基波的毫米波滤波器,所述滤波器的通带固定在30GHz,在很宽一段频带范围内都有很好的抑制水平;第一微带线的长度为1.1±0.02mm,宽度为0.2±0.02mm,第二微带线的长度为4.2±0.02mm,宽度为0.2±0.02mm, 第三微带线的长度为1.1±0.02mm,宽度为0.2±0.02mm,第十九微带线接输入端口,其特性阻抗为50Ω,长度为1.3±0.02mm,宽度为0.8±0.03mm,第四微带线的长度为1.2±0.04mm,宽度为0.2±0.02mm,第五微带线的长度为0.8±0.01mm,宽度为0.2±0.02mm,第六微带线的长度为3.6±0.01mm,宽度为0.2±0.02mm,第七微带线的长度为0.6±0.05mm,宽度为0.2±0.02mm,第八微带线的长度为0.8±0.01mm,宽度为0.2±0.02mm,第九微带线的长度为1.2±0.04mm,宽度为0.2±0.02mm,第十微带线的长度为1.1±0.02mm,宽度为0.2±0.02mm,第十一微带线的长度为4.2±0.02mm,宽度为0.2±0.02mm,第十二微带线的长度为1.1±0.02mm,宽度为0.2±0.02mm,第二十微带线接输出端口,其特性阻抗为50Ω,长度为1.3±0.02mm,宽度为0.8±0.03mm,第一微带线和第八微带线的间距为0.1+0.05mm第三微带线和第五微带线的间距为0.1±0.05mm,第二微带线和第四微带线以及第九微带线之间的间距为0.1±0.05 mm。 The above-mentioned millimeter-wave filter that uses frequency selective coupling to suppress the fundamental wave, the passband of the filter is fixed at 30 GHz, and has a good suppression level in a wide range of frequency bands; the length of the first microstrip line is 1.1±0.02mm, the width is 0.2±0.02mm, the length of the second microstrip line is 4.2±0.02mm, the width is 0.2±0.02mm, the length of the third microstrip line is 1.1±0.02mm, and the width is 0.2±0.02 mm, the nineteenth microstrip line is connected to the input port, its characteristic impedance is 50Ω, the length is 1.3±0.02mm, and the width is 0.8±0.03mm, the length of the fourth microstrip line is 1.2±0.04mm, and the width is 0.2±0.02mm mm, the length of the fifth microstrip line is 0.8±0.01mm, the width is 0.2±0.02mm, the length of the sixth microstrip line is 3.6±0.01mm, and the width is 0.2±0.02mm, the length of the seventh microstrip line is 0.6±0.05mm, the width is 0.2±0.02mm, the length of the eighth microstrip line is 0.8±0.01mm, the width is 0.2±0.02mm, the length of the ninth microstrip line is 1.2±0.04mm, and the width is 0.2±0.02 mm, the length of the tenth microstrip line is 1.1±0.02mm, the width is 0.2±0.02mm, the length of the eleventh microstrip line is 4.2±0.02mm, and the width is 0.2±0.02mm, the width of the twelfth microstrip line The length is 1.1±0.02mm, the width is 0.2±0.02mm, the twentieth microstrip line is connected to the output port, its characteristic impedance is 50Ω, the length is 1.3±0.02mm, the width is 0.8±0.03mm, the first microstrip line and The spacing between the eighth microstrip line is 0.1+0.05mm, the spacing between the third microstrip line and the fifth microstrip line is 0.1±0.05mm, between the second microstrip line, the fourth microstrip line and the ninth microstrip line The spacing is 0.1±0.05 mm.
相对于现有技术,本发明具有如下优点: Compared with the prior art, the present invention has the following advantages:
(1)采用半波长主传输线两端开路,中心加载开路枝节线,使用两个谐振器,实现双模谐振的功能。 (1) Both ends of the half-wavelength main transmission line are open, the center is loaded with open-circuit stub lines, and two resonators are used to realize the function of dual-mode resonance.
(2)由于采用双模谐振器,采用选择性耦合,抑制了基波谐振频率,所以滤波器在工作频率上算是大尺寸,便于加工。整个电路大小为0.37lg′0.58lg,lg是低频对应的波长。 (2) Due to the use of dual-mode resonators and selective coupling, the fundamental resonant frequency is suppressed, so the filter is considered large in size at the operating frequency and is easy to process. The size of the whole circuit is 0.37lg'0.58lg, and lg is the wavelength corresponding to the low frequency.
(3)采用选择性耦合的方式抑制基波,阻带范围很宽,在馈电线和谐振器之间的没有引入附加电路,结构简单。 (3) Selective coupling is used to suppress the fundamental wave, the stop band range is very wide, no additional circuit is introduced between the feeder line and the resonator, and the structure is simple.
附图说明 Description of drawings
图1是采用频率选择性耦合来抑制基波的毫米波滤波器结构图。 Figure 1 is a structural diagram of a millimeter-wave filter that uses frequency-selective coupling to suppress the fundamental wave.
图2a是选择性耦合抑制基波的电磁耦合结构的微带线耦合区域示意图, Figure 2a is a schematic diagram of the microstrip line coupling region of the electromagnetic coupling structure for selective coupling and suppression of the fundamental wave,
图2b是馈电线上的奇偶模电压示意图; Figure 2b is a schematic diagram of odd and even mode voltages on the feeder;
图2c为谐振器部分耦合区域内的奇偶模电压示意图。 Fig. 2c is a schematic diagram of odd and even mode voltages in the partial coupling region of the resonator.
图3是采用频率选择性耦合来抑制基波的毫米波滤波器示意图。 Fig. 3 is a schematic diagram of a millimeter wave filter that uses frequency selective coupling to suppress the fundamental wave.
图4是馈电端口不对称的仿真结果图,基波没有得到抑制。 Fig. 4 is the simulation result diagram of the asymmetry of the feeding port, and the fundamental wave is not suppressed.
图5是仿真和测试的滤波器的插入损耗图。 Figure 5 is a plot of the insertion loss of the simulated and tested filter.
图6是仿真和测试的滤波器的回波损耗图。 Figure 6 is a plot of the return loss of the simulated and tested filter.
图7是局部的低通带的仿真和测试的滤波器的插入损耗图。 Fig. 7 is a diagram of insertion loss of a simulated and tested filter for a local low passband.
图8是局部的低通带的仿真和测试的滤波器的回波损耗图。 Fig. 8 is a return loss diagram of a simulated and tested filter for a local low passband.
具体实施方案 specific implementation plan
下面结合附图对本发明作进一步详细的说明,但本发明要求保护的范围并不局限于下例表述的范围。 The present invention will be described in further detail below in conjunction with the accompanying drawings, but the scope of protection claimed by the present invention is not limited to the scope of the following examples.
如图1所示, 采用频率选择性耦合来抑制基波的毫米波滤波器(使用PCB制版这种简单低成本的工艺实现),包括上层微带结构、中间层介质基板和下层接地金属板;上层微带结构附着在中间层介质基板上表面,下层接地金属板附着在中间层介质基板下表面;其特征在于:上层微带结构包括两条馈电线和两个谐振器;两个谐振器呈中轴对称,并且结构相同,谐振器工作在低通带时等效为半波长谐振器,工作在高通带时也等效为半波长谐振器,但是两条谐振路径是不同的;所述滤波器的其中一条馈电线在输入端口处分成两路,分别对称地沿着中心加载谐振器的外边缘进行耦合馈电;另外一条馈电线在输出端口处分成两路,分别对称地沿着另一个中心加载谐振器进行耦合馈电。 As shown in Figure 1, the millimeter wave filter that uses frequency selective coupling to suppress the fundamental wave (implemented using a simple and low-cost process such as PCB plate making) includes the upper microstrip structure, the middle dielectric substrate and the lower ground metal plate; The upper microstrip structure is attached to the upper surface of the intermediate dielectric substrate, and the lower ground metal plate is attached to the lower surface of the intermediate dielectric substrate; it is characterized in that: the upper microstrip structure includes two feed lines and two resonators; the two resonators are The central axis is symmetrical and has the same structure. The resonator is equivalent to a half-wavelength resonator when it works in the low-pass band, and it is also equivalent to a half-wavelength resonator when it works in the high-pass band, but the two resonance paths are different; the filter One of the feeding lines of the resonator is divided into two ways at the input port, and the coupling feeding is carried out symmetrically along the outer edge of the center-loaded resonator; the other feeding line is divided into two ways at the output port, respectively symmetrically along the other Center-loaded resonators for coupling feed.
上述采用频率选择性耦合来抑制基波的毫米波滤波器,谐振器包括一个半波长主传输线和一个加载在该谐振器中心的开路枝节线。其中半波长主传输微带线部分由第四微带线、第五微带线、第六微带线、第八微带线和第九微带线依次连接而成,第四微带线的一端和第九微带线的一端都开路,另一端分别与微带线的两端相连;加载在第六微带线中心的开路枝节线是第七微带线,它一端连接在半波长主传输线的中间,另一端开路。 In the above-mentioned millimeter-wave filter using frequency selective coupling to suppress the fundamental wave, the resonator includes a half-wavelength main transmission line and an open stub line loaded at the center of the resonator. Among them, the half-wavelength main transmission microstrip line is formed by sequentially connecting the fourth microstrip line, the fifth microstrip line, the sixth microstrip line, the eighth microstrip line and the ninth microstrip line, and the fourth microstrip line One end and one end of the ninth microstrip line are all open, and the other end is connected to the two ends of the microstrip line; In the middle of the transmission line, the other end is open.
上述采用频率选择性耦合来抑制基波的毫米波滤波器,由奇偶模分析可知,在奇模时,半波长主传输线中间相当于接地,对应于低通带,而且是半波长谐振器;即谐振器的半波长主传输线的长度L对应的电长度为所述毫米波带通滤波器的低谐振频率f 1对应的波长的一半;在偶模时,半波长主传输线中间开路,半波长主传输线的一半连接在第七微带线7,其谐振时,对应于高通带,而且是半波长谐振器。即1/2L+L 1为所述毫米波带通滤波器的高谐振频率f 2对应的波长λ的二分之一,L 1为第七微带线7的长度;半波长主传输微带线长度L为第四微带线4、第五微带线5、第六微带线6、第八微带线8和第九微带线9的长度之和;谐振频率f 1由微带线第四微带线4、第五微带线5、第六微带线6、第八微带线8和第九微带线9的长度之和L决定,确定了所要抑制的低谐振频率f 1之后,然后根据第四微带线4、第五微带线5、第六微带线6、第八微带线8和第九微带线9的长度之和L对应为半波长的特性就可以确定L的长度;当高谐振频率f 2确定之后,1/2L+L 1 的长度也随之确定,进而可以确定L 1的长度。由于在第二微带线2的中点采用对称馈电的方法,在由第一微带线1、第二微带线2、第三微带线3组成的馈电线上的电压关于馈电点在奇偶模谐振时都呈偶函数分布。如图2a,为了实现抑制基波谐振,采用选择性耦合的方式,在馈电线和主谐振器之间选择适当的耦合区域,在图2b中为从AA’ 到BB’和从CC’ 到DD’ 所示的两个区域;如图2c在奇模谐振频率f 1,两个区域的电压关于主微带线的中点呈奇函数分布,因此在所选耦合区域中耦合因数为零,抑制了信号从馈电线传输到谐振器,进而基波谐振频率得到了抑制;在偶模谐振频率f 2,两个区域的电压关于主微带线的中点呈偶函数分布,因此在所选耦合区域中耦合因数不为零,并且其耦合强度可由控制耦合间隙得到适当的值。 The above-mentioned millimeter-wave filter that uses frequency selective coupling to suppress the fundamental wave can be seen from the analysis of odd and even modes. In the odd mode, the middle of the half-wavelength main transmission line is equivalent to grounding, corresponding to the low passband, and is a half-wavelength resonator; The electrical length corresponding to the length L of the half-wavelength main transmission line of the resonator is half of the wavelength corresponding to the low resonance frequency f 1 of the millimeter-wave bandpass filter; Half of the transmission line is connected to the seventh microstrip line 7, which corresponds to the high-pass band when it resonates, and is a half-wavelength resonator. That is, 1/2 L + L 1 is 1/2 of the wavelength λ corresponding to the high resonance frequency f 2 of the millimeter-wave bandpass filter, and L 1 is the length of the seventh microstrip line 7; the half-wavelength main transmission micro The stripline length L is the sum of the lengths of the fourth microstrip line 4, the fifth microstrip line 5, the sixth microstrip line 6, the eighth microstrip line 8 and the ninth microstrip line 9 ; the resonant frequency f is determined by the microstrip line The sum L of the lengths of the fourth microstrip line 4, the fifth microstrip line 5, the sixth microstrip line 6, the eighth microstrip line 8 and the ninth microstrip line 9 determines the low resonance to be suppressed After the frequency f 1 , then the sum L of the lengths of the fourth microstrip line 4, the fifth microstrip line 5, the sixth microstrip line 6, the eighth microstrip line 8 and the ninth microstrip line 9 corresponds to a half wavelength The length of L can be determined by the characteristic of L; when the high resonance frequency f 2 is determined, the length of 1/2L+L 1 is also determined, and then the length of L 1 can be determined. Due to the symmetrical feeding method adopted at the midpoint of the second microstrip line 2, the voltage on the feeder line composed of the first microstrip line 1, the second microstrip line 2 and the third microstrip line 3 is related to the feeding Points are distributed as even functions when the odd and even modes resonate. As shown in Figure 2a, in order to suppress the fundamental resonance, the selective coupling method is used to select the appropriate coupling area between the feeder line and the main resonator, in Figure 2b it is from AA' to BB' and from CC' to DD ' shown in the two regions; as shown in Fig. 2c, at the odd-mode resonant frequency f 1 , the voltages of the two regions are distributed as an odd function with respect to the midpoint of the main microstrip line, so the coupling factor is zero in the selected coupling region, suppressing The signal is transmitted from the feed line to the resonator, and the fundamental resonant frequency is suppressed; at the even-mode resonant frequency f 2 , the voltages of the two regions are distributed as an even function with respect to the midpoint of the main microstrip line, so in the selected coupling The coupling factor in the region is not zero, and its coupling strength can be obtained by controlling the coupling gap to an appropriate value.
上述采用频率选择性耦合来抑制基波的毫米波滤波器,谐振器的半波长主传输线部分由第四微带线4、第五微带线5、第六微带线6、第八微带线8和第九微带线9依次连接而成,两个谐振器关于中轴对称,呈两个背靠背的E型结构。 For the millimeter-wave filter that uses frequency selective coupling to suppress the fundamental wave, the half-wavelength main transmission line of the resonator is composed of the fourth microstrip line 4, the fifth microstrip line 5, the sixth microstrip line 6, and the eighth microstrip line. The line 8 and the ninth microstrip line 9 are connected in sequence, and the two resonators are symmetrical about the central axis, forming two back-to-back E-shaped structures.
上述采用频率选择性耦合来抑制基波的毫米波滤波器,所述其中一条馈电线由第一微带线1、第二微带线2、第三微带线3、第十九微带线19组成,第一微带线1一端开路,另一端与第二微带线2一端相连,第二微带线2另一端与第三微带线3一端相连,第三微带线3另一端开路,第十九微带线19一端开路,另一端垂直搭接在第二微带线2的中心;另一条馈电线由第十微带线10、第十一微带线11、第十二微带线12、第二十微带线20组成,第十微带线10一端开路,另一端与第十一微带线11一端相连,第十一微带线11另一端与第十二微带线12一端相连,第十二微带线12另一端开路,第二十微带线20一端开路,另一端垂直搭接在第十一微带线11上的中心;接在输入端口之后的馈电线分成两路,其中一路包括第一微带1线和第二微带线2的一半;另一路包括第三微带线2和第二微带线2的另一半。作为举例,其中第一微带线1与半波长主传输线的第八微带线8之间有0.1±0.05 mm的间隙来实现平行耦合;第三微带线3与半波长主传输线的第五微带线5之间有0.1±0.05 mm的间隙来实现平行耦合;第二微带线2和第四微带线4以及第九微带线9之间有0.1±0.05 mm的间隙来实现平行耦合。 In the millimeter wave filter using frequency selective coupling to suppress the fundamental wave, one of the feed lines is composed of the first microstrip line 1, the second microstrip line 2, the third microstrip line 3, and the nineteenth microstrip line 19 components, one end of the first microstrip line 1 is open, the other end is connected to one end of the second microstrip line 2, the other end of the second microstrip line 2 is connected to one end of the third microstrip line 3, and the other end of the third microstrip line 3 Open circuit, one end of the nineteenth microstrip line 19 is open circuit, and the other end is vertically lapped at the center of the second microstrip line 2; the other feeder line consists of the tenth microstrip line 10, the eleventh microstrip line 11, the One end of the tenth microstrip line 10 is open, the other end is connected to one end of the eleventh microstrip line 11, the other end of the eleventh microstrip line 11 is connected to the twelfth microstrip line One end of the strip line 12 is connected, the other end of the twelfth microstrip line 12 is open, one end of the twentieth microstrip line 20 is open, and the other end is vertically lapped at the center of the eleventh microstrip line 11; The feeding lines are divided into two paths, one path includes the first microstrip line 1 and half of the second microstrip line 2 ; the other path includes the third microstrip line 2 and the other half of the second microstrip line 2 . As an example, there is a gap of 0.1±0.05 mm between the first microstrip line 1 and the eighth microstrip line 8 of the half-wavelength main transmission line to realize parallel coupling; the third microstrip line 3 and the fifth half-wavelength main transmission line There is a gap of 0.1±0.05 mm between the microstrip lines 5 to achieve parallel coupling; there is a gap of 0.1±0.05 mm between the second microstrip line 2 and the fourth microstrip line 4 and the ninth microstrip line 9 to achieve parallel coupling coupling.
所述接在输出端口之前的馈电线分成两路,一路包括第十微带线10和第十一微带线11的一半;另一路包括第十二微带线12与第十一微带线11的另一半。 The feeder line connected before the output port is divided into two paths, one path includes half of the tenth microstrip line 10 and the eleventh microstrip line 11; the other path includes the twelfth microstrip line 12 and the eleventh microstrip line The other half of 11.
作为举例,所述滤波器的通带固定在30GHz,在很宽一段频带范围内都有很好的抑制水平;第一微带线1的长度为1.1±0.02mm,宽度为0.2±0.02mm,第二微带线2的长度为4.2±0.02mm,宽度为0.2±0.02mm, 第三微带线3的长度为1.1±0.02mm,宽度为0.2±0.02mm,第十九微带线19接输入端口,其特性阻抗为50Ω,长度为1.3±0.02mm,宽度为0.8±0.03mm,第四微带线4的长度为1.2±0.04mm,宽度为0.2±0.02mm,第五微带线5的长度为0.8±0.01mm,宽度为0.2±0.02mm,第六微带线6的长度为3.6±0.01mm,宽度为0.2±0.02mm,第七微带线7的长度为0.6±0.05mm,宽度为0.2±0.02mm,第八微带线8的长度为0.8±0.01mm,宽度为0.2±0.02mm,第九微带线9的长度为1.2±0.04mm,宽度为0.2±0.02mm,第十微带线10的长度为1.1±0.02mm,宽度为0.2±0.02mm,第十一微带线11的长度为4.2±0.02mm,宽度为0.2±0.02mm,第十二微带线12的长度为1.1±0.02mm,宽度为0.2±0.02mm,第二十微带线20接输出端口,其特性阻抗为50Ω,长度为1.3±0.02mm,宽度为0.8±0.03mm,第一微带线1和第八微带线8的间距为0.1+0.05mm第三微带线3和第五微带线5的间距为0.1±0.05mm,;第二微带线2和第四微带线4以及第九微带线9之间的间距为0.1±0.05 mm。 As an example, the passband of the filter is fixed at 30 GHz, and has a good suppression level in a wide range of frequency bands; the length of the first microstrip line 1 is 1.1 ± 0.02 mm, and the width is 0.2 ± 0.02 mm, The length of the second microstrip line 2 is 4.2±0.02mm, and the width is 0.2±0.02mm. The length of the third microstrip line 3 is 1.1±0.02mm, and the width is 0.2±0.02mm. The nineteenth microstrip line 19 is connected to The input port has a characteristic impedance of 50Ω, a length of 1.3±0.02mm, and a width of 0.8±0.03mm. The length of the fourth microstrip line 4 is 1.2±0.04mm, and the width is 0.2±0.02mm. The fifth microstrip line 5 The length is 0.8±0.01mm, the width is 0.2±0.02mm, the length of the sixth microstrip line 6 is 3.6±0.01mm, the width is 0.2±0.02mm, the length of the seventh microstrip line 7 is 0.6±0.05mm, The width is 0.2±0.02mm, the length of the eighth microstrip line 8 is 0.8±0.01mm, and the width is 0.2±0.02mm, the length of the ninth microstrip line 9 is 1.2±0.04mm, and the width is 0.2±0.02mm. The tenth microstrip line 10 has a length of 1.1±0.02mm and a width of 0.2±0.02mm, the eleventh microstrip line 11 has a length of 4.2±0.02mm and a width of 0.2±0.02mm, and the twelfth microstrip line 12 The length is 1.1±0.02mm, the width is 0.2±0.02mm, the twentieth microstrip line 20 is connected to the output port, its characteristic impedance is 50Ω, the length is 1.3±0.02mm, the width is 0.8±0.03mm, the first microstrip line The distance between 1 and the eighth microstrip line 8 is 0.1+0.05mm, the distance between the third microstrip line 3 and the fifth microstrip line 5 is 0.1±0.05mm; the second microstrip line 2 and the fourth microstrip line 4 And the spacing between the ninth microstrip lines 9 is 0.1±0.05 mm.
实施例 Example
一种采用频率选择性耦合来抑制基波的毫米波滤波器的结构如图1所示,有关尺寸规格如下图3所示;介质基板的厚度为0.254mm,相对介电常数为2.2,损耗角正切为0.0009;谐振器采用E形结构可以方便实现选择性耦合馈电结构的设计;滤波器的各微带线尺寸参数如下:L 1=1.06±0.01mm, L 2=0.6±0.01mm, L 3=1.16±0.01mm, L 4=L5=1.515±0.01mm, L 6=1.385 ±0.01mm, L 7=0.65±0.01mm, g 1=0.15±0.01mm, g 2=0.1±0.01mm, W 1=0.2±0.01mm, W 2=0.77±0.01mm, W 3=0.2±0.01mm, W 4=0.2±0.01mm,选择这些微带线各自的长度和宽度,以获得所需的输入/输出阻抗特性、频带内传输特性和频带外衰减特性。 The structure of a millimeter-wave filter that uses frequency selective coupling to suppress the fundamental wave is shown in Figure 1, and the relevant dimensions are shown in Figure 3 below; the thickness of the dielectric substrate is 0.254mm, the relative permittivity is 2.2, and the loss angle The tangent is 0.0009; the E-shaped structure of the resonator can facilitate the design of selective coupling feeding structure; the size parameters of each microstrip line of the filter are as follows: L 1 =1.06±0.01mm, L 2 =0.6±0.01mm, L 3 =1.16±0.01mm, L 4 = L5 =1.515±0.01mm, L 6 =1.385±0.01mm, L 7 =0.65±0.01mm, g 1 =0.15±0.01mm, g 2 =0.1±0.01mm, W 1 =0.2±0.01mm, W 2 =0.77±0.01mm, W 3 =0.2±0.01mm, W 4 =0.2±0.01mm, select the respective length and width of these microstrip lines to obtain the desired input/output Impedance characteristics, in-band transmission characteristics and out-of-band attenuation characteristics.
图4是在其他参数不变的条件下,馈电端口不对称的仿真结果图;虚线代表插入损耗S21的仿真结果,实线代表回波损耗S11的仿真结果;从图中可以看出,当馈电端口不对称时,基波谐振通带没有得到抑制,当馈电端口对称时,基波谐振通带被很好地抑制了,呈现良好带外抑制特性;图5和图6分别是按照上述参数设计出来的大尺寸的抑制基波的毫米波带通滤波器S21(插入损耗)和S11(回波损耗)的仿真结果;输特性曲线图中的横轴表示频率,纵轴表示传输特性 、的dB值;虚线为仿真结果,实线为测试结果;图5的测试结果显示通带中心频率为30.2 GHz,插入损耗2.5dB,和仿真的插入损耗1.1dB有差别是因为包含了50传输线的损耗和端口上SMA头的损耗,在通带的两侧都有传输零点,极大地改善了滤波器的选择性;由于基波谐振频率得到了抑制,获得了很好的带外抑制特性,在频率低于29GHz和33GHz至50GHz频率范围内,回波损耗低于-20dB;为了更加清楚地展示通带特性及带外抑制的效果,图7截取了图5中的局部的图形,其测试插入损耗为-2.5dB,其仿真插入损耗为-1.1dB ,-3dB相对带宽为4.6%;图6为传输特性的仿真曲线,从图中可以看出,仿真通带回波损耗优于-23dB;为了更加清楚地看通带回波损耗S11的效果,图8截取了图6中通带局部的图形,测试结果通带回波损耗优于-11dB,测试结果与仿真结果基本一致,仿真和测试分别是使用全波电磁仿真软件IE3D和E5071C网络分析仪来完成的。 Fig. 4 is the simulation result diagram of asymmetric feed port under the condition of other parameters being constant; the dotted line represents the simulation result of insertion loss S 21 , and the solid line represents the simulation result of return loss S 11 ; it can be seen from the figure , when the feeding port is asymmetrical, the fundamental resonance passband is not suppressed, when the feeding port is symmetrical, the fundamental resonance passband is well suppressed, showing good out-of-band suppression characteristics; Figure 5 and Figure 6 respectively It is the simulation result of S 21 (insertion loss) and S 11 (return loss) of the large-sized millimeter-wave bandpass filter that suppresses the fundamental wave designed according to the above parameters; the horizontal axis in the output characteristic curve represents the frequency, and the vertical Axes represent transfer characteristics , The dotted line is the simulation result, and the solid line is the test result; the test result in Figure 5 shows that the center frequency of the passband is 30.2 GHz, and the insertion loss is 2.5dB, which is different from the simulation insertion loss of 1.1dB because the 50 The loss and the loss of the SMA head on the port, there are transmission zeros on both sides of the passband, which greatly improves the selectivity of the filter; because the fundamental resonant frequency is suppressed, a good out-of-band suppression characteristic is obtained. The frequency is lower than 29GHz and in the frequency range from 33GHz to 50GHz, the return loss is lower than -20dB; in order to show the passband characteristics and the effect of out-of-band suppression more clearly, Figure 7 intercepts the partial graphics in Figure 5, and its test insertion The loss is -2.5dB, the simulation insertion loss is -1.1dB, and the relative bandwidth of -3dB is 4.6%; Figure 6 shows the transmission characteristics It can be seen from the figure that the simulated passband return loss is better than -23dB; in order to see the effect of the passband return loss S 11 more clearly, Fig. 8 intercepts the partial passband graph in Fig. 6, The test result shows that the passband return loss is better than -11dB, and the test result is basically consistent with the simulation result. The simulation and test are completed by using the full-wave electromagnetic simulation software IE3D and E5071C network analyzer respectively.
实施例的仿真和实测结果表明,基波谐振频率可以通过上述设计得到良好的抑制,而且没有引入附加电路,在谐振频率上具有相对较大的电路尺寸,具有在30G频段容易加工制造,通带选择型好的特点。 The simulation and actual measurement results of the embodiment show that the fundamental resonant frequency can be well suppressed by the above design, and no additional circuit is introduced, the resonant frequency has a relatively large circuit size, and it is easy to process and manufacture in the 30G frequency band, and the passband Choose good features.
以上所述仅为本发明的较佳实例而已,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。 The above descriptions are only preferred examples of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the protection of the present invention. within range.
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| CN105070998A (en) * | 2015-08-27 | 2015-11-18 | 华南理工大学 | Miniaturized cross connector with filtering function |
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| CN109066023A (en) * | 2018-08-13 | 2018-12-21 | 上海健康医学院 | A kind of microstrip line low-pass filter based on open-loop resonator |
| CN109066023B (en) * | 2018-08-13 | 2024-02-13 | 上海健康医学院 | A microstrip line low-pass filter based on open-loop resonator |
| CN113922020A (en) * | 2021-09-22 | 2022-01-11 | 杭州电子科技大学 | Broadband high-rejection dual-passband filter composed of C-type resonators |
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