CN104009057A - Backside illuminated image sensor pixel, image sensor and manufacturing method of backside illuminated image sensor pixel - Google Patents
Backside illuminated image sensor pixel, image sensor and manufacturing method of backside illuminated image sensor pixel Download PDFInfo
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- CN104009057A CN104009057A CN201410267744.XA CN201410267744A CN104009057A CN 104009057 A CN104009057 A CN 104009057A CN 201410267744 A CN201410267744 A CN 201410267744A CN 104009057 A CN104009057 A CN 104009057A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000011248 coating agent Substances 0.000 claims abstract description 33
- 238000000576 coating method Methods 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 229920002120 photoresistant polymer Polymers 0.000 claims description 66
- 238000005286 illumination Methods 0.000 claims description 29
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 24
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 16
- 239000011241 protective layer Substances 0.000 claims description 16
- 238000001312 dry etching Methods 0.000 claims description 15
- 238000004528 spin coating Methods 0.000 claims description 15
- 238000004140 cleaning Methods 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 10
- 238000001259 photo etching Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000007769 metal material Substances 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
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- 229910052710 silicon Inorganic materials 0.000 description 1
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Abstract
The invention discloses a backside illuminated image sensor pixel, an image sensor and a manufacturing method of the backside illuminated image sensor pixel. The backside illuminated image sensor pixel comprises a light sensitive device arranged in a semiconductor base body, a color filter arranged on the back face of the semiconductor base body, a micro lens arranged on the back face of the semiconductor base body, a metal interconnecting wire arranged in a front face insulating medium, and a curved surface type mirror light reflection coating arranged on the front face of the semiconductor base body. The light reflection coating can reflect all light emitted out of the light sensitive device back to the light sensitive device, the light is then absorbed by the light sensitive device, and therefore the absorption efficiency of long-wavelength light wave red light is improved, and the light sensitivity of the red backside illuminated image sensor pixel is effectively improved.
Description
Technical field
The present invention relates to a kind of imageing sensor, relate in particular to a kind of back side illumination image sensor pixel and imageing sensor and preparation method thereof.
Background technology
At present, imageing sensor has been widely used in digital camera, cell phone, medicine equipment, automobile and other application scenarios.The fast development of particularly manufacturing CMOS (CMOS (Complementary Metal Oxide Semiconductor)) imageing sensor and CCD (electric charge coupled mode device) image sensor technologies, makes people have higher requirement to the output image quality of imageing sensor.
In the prior art, from structure, distinguish, imageing sensor generally has two kinds: front according to formula structure and back-illuminated type structure, back-illuminated type structure is more suitable for small-sized pixel, for example 1.4um pixel.Sensor devices thickness in back-illuminated type pixel is generally 2um～3um, short-wavelength visible light, and for example blue light can be absorbed completely by sensor devices; Yet wavelength visible ruddiness, need to more can be absorbed by major part to 6um depths at sensor devices.Therefore,, in back-illuminated type pixel in the prior art, have at least half ruddiness by sensor devices, not absorbed and to lose.
As shown in Figure 1, show a kind of back side illumination image sensor pixel schematic diagram of the prior art, comprise the Red lightscreening plate 104 at three adjacent sensor devices 101～103, the back side, the lenticule 105 at the back side, positive dielectric 106, positive metal interconnecting wires 107; And in Fig. 1,108 is semiconductor substrate, the 109 and 110 flatness layer dielectrics that are the back side.As shown in Figure 1, long wavelength's light wave, from back surface incident, successively through 110,104 and 109, arrives sensor devices 101st district after lenticule 105 converges; Sensor devices can only absorb a part of long wavelength light, and the part light not absorbed by sensor devices passes sensor devices, and from positive dielectric, 106th district pass chip.
Above-mentioned back side illumination image sensor pixel of the prior art, nearly half ruddiness is not absorbed by sensor devices, and causes the phenomenon of wavelength visible ruddiness waste, so the luminous sensitivity of red pixel is low.
Summary of the invention
The object of this invention is to provide a kind of back side illumination image sensor pixel of the long wavelength's of raising light wave absorption efficiency and imageing sensor and preparation method thereof.
The object of the invention is to be achieved through the following technical solutions:
Back side illumination image sensor pixel of the present invention, comprises the metal interconnecting wires that is placed in the sensor devices of semiconductor substrate, the colored filter that is placed in the back side and lenticule, is placed in front dielectric, and described front is provided with curved face type minute surface reflecting coating.
Imageing sensor of the present invention, this imageing sensor is provided with above-mentioned back side illumination image sensor pixel.
The manufacture method of above-mentioned back side illumination image sensor pixel of the present invention, comprises step:
A. after the back-end metal processes of chip front side completes, deposit silicon nitride protective layer, silicon nitride thickness is not less than 200nm;
B. spin coating photoresist;
C. expose and develop, at presumptive area photoresist opening;
D. dry etching, removes the silicon nitride protective layer of photoresist open area;
E. cleaning photoetching glue, removes all photoresists;
F. spin coating photoresist, photoresist thickness is greater than silicon nitride thickness 200nm in step a;
G. expose and develop, only at presumptive area place, staying photoresist;
H. heating, 150 degrees Celsius～250 degrees Celsius, melt photoresist to microlens shape, afterwards, coolingly make photoresist hardening;
I. dry etching, after lenticule shape photoresist etching, continues the dielectric below etching, and the surperficial perigee distance sensor devices of etching is not less than 100nm;
J. curved face type minute surface reflecting coating deposition of materials, the method for use comprises the sputter of metal rake thin and metallic vapour deposit, and the thickness of reflecting coating is not less than 100nm;
K. spin coating photoresist;
L. expose and develop, in presumptive area, photoresist is stayed at place;
M. dry etching, after the metal material etching at non-photoresist place, continues to etch away protective layer silicon nitride;
N. cleaning photoetching glue, removes all photoresists;
O. deposit dielectric silicon phosphorus glass, fills and leads up the hole on reflecting coating;
P. cmp, is ground to smooth by the dielectric in step o.
As seen from the above technical solution provided by the invention, the back side illumination image sensor pixel that the embodiment of the present invention provides and imageing sensor and preparation method thereof, owing to being equipped with curved face type minute surface reflecting coating in the front insulation in pixel, this reflecting coating can all reflect back into sensor devices by the light transmitting from sensor devices, this is absorbed by sensor devices again, thereby improved the absorption efficiency of long wavelength's light wave ruddiness, effectively improved the luminous sensitivity of back side illumination image sensor red pixel.
Accompanying drawing explanation
Fig. 1 is the structural representation of back side illumination image sensor pixel of the prior art.
Fig. 2 is the structural representation of the back side illumination image sensor pixel in the embodiment of the present invention.
Fig. 3 is the pixel schematic diagram of the positive back-end metal processes of imageing sensor after completing in the embodiment of the present invention.
Fig. 4 is the processing step schematic diagram of the image sensor pixel deposit silicon nitride protective layer in the embodiment of the present invention.
Fig. 5 is the processing step schematic diagram of image sensor pixel first this spin coating photoresist in the embodiment of the present invention.
Fig. 6 is the processing step schematic diagram that the image sensor pixel in the embodiment of the present invention exposes for the first time and develops.
Fig. 7 is image sensor pixel in the embodiment of the present invention processing step schematic diagram of dry etching for the first time.
Fig. 8 is image sensor pixel in the embodiment of the present invention processing step schematic diagram of cleaning photoetching glue for the first time.
Fig. 9 is image sensor pixel in the embodiment of the present invention processing step schematic diagram of spin coating photoresist for the second time.
Figure 10 is the processing step schematic diagram that the image sensor pixel in the embodiment of the present invention exposes for the second time and develops.
Figure 11 is the processing step schematic diagram of the image sensor pixel heating and melting photoresist in the embodiment of the present invention.
Figure 12 is image sensor pixel in the embodiment of the present invention processing step schematic diagram of dry etching for the second time.
Figure 13 is the processing step schematic diagram of the image sensor pixel depositing metal material in the embodiment of the present invention.
Figure 14 is image sensor pixel in the embodiment of the present invention processing step schematic diagram of spin coating photoresist for the third time.
Figure 15 is the processing step schematic diagram that the image sensor pixel in the embodiment of the present invention exposes for the third time and develops.
Figure 16 is image sensor pixel in the embodiment of the present invention processing step schematic diagram of dry etching for the third time.
Figure 17 is image sensor pixel in the embodiment of the present invention processing step schematic diagram of cleaning photoetching glue for the second time.
Figure 18 is the processing step schematic diagram of the image sensor pixel deposit dielectric material in the embodiment of the present invention.
Figure 19 is the processing step schematic diagram of the image sensor pixel cmp in the embodiment of the present invention.
Embodiment
To be described in further detail the embodiment of the present invention below.
Back side illumination image sensor pixel of the present invention, its preferably embodiment be:
Comprise the metal interconnecting wires that is placed in the sensor devices of semiconductor substrate, the colored filter that is placed in the back side and lenticule, is placed in front dielectric, described front is provided with curved face type minute surface reflecting coating.
The radius of curvature of described curved face type minute surface reflecting coating is identical or not identical with the radius of curvature on described lenticule surface.
The material of described curved face type minute surface reflecting coating comprises metallic aluminium and/or argent.
The thickness of the material of described curved face type minute surface reflecting coating is more than or equal to 100nm.
The distance of the described sensor devices of described curved face type minute surface reflecting coating distance is more than or equal to 100nm.
Described curved face type minute surface reflecting coating is coated on silicon phosphorus glass dielectric.
Imageing sensor of the present invention, its preferably embodiment be:
This imageing sensor is provided with above-mentioned back side illumination image sensor pixel.
Described imageing sensor is CCD type imageing sensor or CMOS type imageing sensor.
Described imageing sensor is visible light image sensor or invisible light near-infrared image transducer.
The manufacture method of above-mentioned back side illumination image sensor pixel of the present invention, its preferably embodiment be:
Comprise step:
A. after the back-end metal processes of chip front side completes, deposit silicon nitride protective layer, silicon nitride thickness is not less than 200nm;
B. spin coating photoresist;
C. expose and develop, at presumptive area photoresist opening;
D. dry etching, removes the silicon nitride protective layer of photoresist open area;
E. cleaning photoetching glue, removes all photoresists;
F. spin coating photoresist, photoresist thickness is greater than silicon nitride thickness 200nm in step a;
G. expose and develop, only at presumptive area place, staying photoresist;
H. heating, 150 degrees Celsius～250 degrees Celsius, melt photoresist to microlens shape, afterwards, coolingly make photoresist hardening;
I. dry etching, after lenticule shape photoresist etching, continues the dielectric below etching, and the surperficial perigee distance sensor devices of etching is not less than 100nm;
J. curved face type minute surface reflecting coating deposition of materials, the method for use comprises the sputter of metal rake thin and metallic vapour deposit, and the thickness of reflecting coating is not less than 100nm;
K. spin coating photoresist;
L. expose and develop, in presumptive area, photoresist is stayed at place;
M. dry etching, after the metal material etching at non-photoresist place, continues to etch away protective layer silicon nitride;
N. cleaning photoetching glue, removes all photoresists;
O. deposit dielectric silicon phosphorus glass, fills and leads up the hole on reflecting coating;
P. cmp, is ground to smooth by the dielectric in step o.
Back side illumination image sensor pixel of the present invention, in the insulation of front, be equipped with curved face type minute surface reflecting coating, this reflecting coating can all reflect back into sensor devices by the light transmitting from sensor devices, this is absorbed by sensor devices again, thereby improved the absorption efficiency of long wavelength's light wave ruddiness, effectively improved the luminous sensitivity of back side illumination image sensor red pixel.
Embodiment mono-:
As shown in Figure 2,201～203 is three adjacent sensor devices, 204 is the Red lightscreening plate at the back side, 205 is the lenticule at the back side, and 206 is positive dielectric, and 207 is positive metal interconnecting wires, 208 is semiconductor substrate, 209 and 211 is the flatness layer dielectric at the back side, and 212 is curved face type minute surface reflecting coating, and 213 is silicon phosphorus glass dielectric.
Shown in Fig. 2, long wavelength's light wave is from back surface incident, successively through 205,211,204 and 209, arrive sensor devices 201, absorption properties according to semiconductor silicon to light, long wavelength light ruddiness need to be in sensor devices depths more, and for example 6um could be absorbed by most of, and back side illumination image sensor sensor devices depth bounds is 2um～3um, so nearly half ruddiness is not absorbed by sensor devices and transmission is gone out; The light transmiting runs into after positive curved face type minute surface reflecting coating, is all reflected and gets back in sensor devices, and this part light is absorbed by sensor devices again.Therefore back side illumination image sensor pixel of the present invention, has effectively improved the absorption efficiency of long wavelength light, and then has improved the luminous sensitivity of red pixel.
Embodiment bis-:
In order further clearly to set forth feature of the present invention, Fig. 3 to Figure 19 has characterized the fabrication processing of back side illumination image sensor pixel of the present invention in detail.
Shown in Fig. 3 is the pixel schematic diagram after the back-end metal processes of making in back side illumination image sensor technique; As shown in Figure 3,301～303 is three adjacent sensor devices, and 306 is positive dielectric, and 307 is positive metal interconnecting wires, and 308 is semiconductor substrate.
Shown in Fig. 4 is the processing step schematic diagram of image sensor pixel deposit silicon nitride protective layer of the present invention.Wherein, 409 is silicon nitride protective layer, and its thickness is not less than 200nm.
Shown in Fig. 5 is the processing step schematic diagram of image sensor pixel first this spin coating photoresist of the present invention.This photoresist is for the silicon nitride protective layer technique in etching precalculated position.
Shown in Fig. 6 is the processing step schematic diagram that image sensor pixel of the present invention exposes for the first time and develops.The object of this step is that photoresist is at precalculated position opening.
Shown in Fig. 7 is the image sensor pixel of the present invention processing step schematic diagram of dry etching for the first time.The object of this step is that the silicon nitride protective layer of photoresist opening part is etched away.
Shown in Fig. 8 is the image sensor pixel of the present invention processing step schematic diagram of cleaning photoetching glue for the first time.The object of this step is that all photoresists in technique are washed.
Shown in Fig. 9 is the image sensor pixel of the present invention processing step schematic diagram of spin coating photoresist for the second time.This photoresist is used to form micro lens technology.
Shown in Figure 10 is the processing step schematic diagram that image sensor pixel of the present invention exposes for the second time and develops.The object of this step is to stay photoresist in precalculated position.
Shown in Figure 11 is the processing step schematic diagram of image sensor pixel heating and melting photoresist of the present invention.The object of this step is, by the photoresist thawing in precalculated position, is sticky shape, and under the effect of stress, this photoresist changes microlens shape into by rectangle; Wherein the melt temperature scope of photoresist is 150 degrees Celsius～250 degrees Celsius.Photoresist is melted as after microlens shape, cooling, make photoresist change solid shape into by sticky shape, hardening; In figure, 1101 are labeled as lenticule surface topography.
Shown in Figure 12 is the image sensor pixel of the present invention processing step schematic diagram of dry etching for the second time.In this process, first etch away the lenticule shape photoresist in precalculated position, then continue the dielectric of etching presumptive area, the dielectric in Ji306 district; And the upper surface shape in etching 306 district is keeping lenticular 1101 patterns of photoresist.
Shown in Figure 13 is the processing step schematic diagram of image sensor pixel depositing metal material of the present invention.Shown in Figure 13,1301 is the curved face type minute surface reflecting coating metal level of deposit, and 1302 is the metal coating of deposit on silicon nitride, and coating layer thickness is not less than 100nm; In this step, the material of deposit can be metal simple-substance silver, can be also metal simple-substance aluminium; Depositing technics in this step, can adopt metal rake thin sputtering method, also can adopt metallic vapour sedimentation.
Shown in Figure 14 is the image sensor pixel of the present invention processing step schematic diagram of spin coating photoresist for the third time.This photoresist is for the technique of etching metal and silicon nitride layer.
Shown in Figure 15 is the processing step schematic diagram that image sensor pixel of the present invention exposes for the third time and develops.The object of this step is to stay photoresist in precalculated position.
Shown in Figure 16 is the image sensor pixel of the present invention processing step schematic diagram of dry etching for the third time.In this process, first etch away the metal coating above silicon nitride protective layer, then continue to etch away silicon nitride protective layer.
Shown in Figure 17 is the image sensor pixel of the present invention processing step schematic diagram of cleaning photoetching glue for the second time.The object of this step is that all photoresists in technique are washed.
Shown in Figure 18 is the processing step schematic diagram of image sensor pixel deposit dielectric material of the present invention.The object of this step is, 1301 holes are are above filled and led up, and the insulating material using can be silicon phosphorus glass, as shown in 1801 in Figure 18.
Shown in Figure 19 is the processing step schematic diagram of image sensor pixel cmp of the present invention.The object of this step is, 1801st district, positive surface are ground smooth so that the technological operation after carrying out, as shown in 1901 in Figure 19.
The above; be only the present invention's embodiment preferably, but protection scope of the present invention is not limited to this, is anyly familiar with in technical scope that those skilled in the art disclose in the present invention; the variation that can expect easily or replacement, within all should being encompassed in protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (10)
1. a back side illumination image sensor pixel, comprise the metal interconnecting wires that is placed in the sensor devices of semiconductor substrate, the colored filter that is placed in the back side and lenticule, is placed in front dielectric, it is characterized in that, described front is provided with curved face type minute surface reflecting coating.
2. back side illumination image sensor pixel according to claim 1, is characterized in that, the radius of curvature of described curved face type minute surface reflecting coating is identical or not identical with the radius of curvature on described lenticule surface.
3. back side illumination image sensor pixel according to claim 2, is characterized in that, the material of described curved face type minute surface reflecting coating comprises metallic aluminium and/or argent.
4. back side illumination image sensor pixel according to claim 3, is characterized in that, the thickness of the material of described curved face type minute surface reflecting coating is more than or equal to 100nm.
5. back side illumination image sensor pixel according to claim 4, is characterized in that, the distance of the described sensor devices of described curved face type minute surface reflecting coating distance is more than or equal to 100nm.
6. back side illumination image sensor pixel according to claim 5, is characterized in that, described curved face type minute surface reflecting coating is coated on silicon phosphorus glass dielectric.
7. an imageing sensor, is characterized in that, this imageing sensor is provided with the back side illumination image sensor pixel described in claim 1 to 6 any one.
8. imageing sensor according to claim 7, is characterized in that, described imageing sensor is CCD type imageing sensor or CMOS type imageing sensor.
9. imageing sensor according to claim 8, is characterized in that, described imageing sensor is visible light image sensor or invisible light near-infrared image transducer.
10. a manufacture method for the back side illumination image sensor pixel described in claim 1 to 6 any one, is characterized in that, comprises step:
A. after the back-end metal processes of chip front side completes, deposit silicon nitride protective layer, silicon nitride thickness is not less than 200nm;
B. spin coating photoresist;
C. expose and develop, at presumptive area photoresist opening;
D. dry etching, removes the silicon nitride protective layer of photoresist open area;
E. cleaning photoetching glue, removes all photoresists;
F. spin coating photoresist, photoresist thickness is greater than silicon nitride thickness 200nm in step a;
G. expose and develop, only at presumptive area place, staying photoresist;
H. heating, 150 degrees Celsius～250 degrees Celsius, melt photoresist to microlens shape, afterwards, coolingly make photoresist hardening;
I. dry etching, after lenticule shape photoresist etching, continues the dielectric below etching, and the surperficial perigee distance sensor devices of etching is not less than 100nm;
J. curved face type minute surface reflecting coating deposition of materials, the method for use comprises the sputter of metal rake thin and metallic vapour deposit, and the thickness of reflecting coating is not less than 100nm;
K. spin coating photoresist;
L. expose and develop, in presumptive area, photoresist is stayed at place;
M. dry etching, after the metal material etching at non-photoresist place, continues to etch away protective layer silicon nitride;
N. cleaning photoetching glue, removes all photoresists;
O. deposit dielectric silicon phosphorus glass, fills and leads up the hole on reflecting coating;
P. cmp, is ground to smooth by the dielectric in step o.
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| CN201410267744.XA CN104009057A (en) | 2014-06-16 | 2014-06-16 | Backside illuminated image sensor pixel, image sensor and manufacturing method of backside illuminated image sensor pixel |
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| CN201410267744.XA CN104009057A (en) | 2014-06-16 | 2014-06-16 | Backside illuminated image sensor pixel, image sensor and manufacturing method of backside illuminated image sensor pixel |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108847418A (en) * | 2018-06-15 | 2018-11-20 | 上海微阱电子科技有限公司 | A kind of image sensor structure and forming method enhancing near-infrared quantum efficiency |
| CN109216388A (en) * | 2018-08-10 | 2019-01-15 | 上海集成电路研发中心有限公司 | Enhance the pixel cell structure and forming method of imaging sensor near-infrared performance |
| CN111769131A (en) * | 2020-06-24 | 2020-10-13 | 中国电子科技集团公司第四十四研究所 | A back-illuminated CCD for enhancing near-infrared quantum efficiency and its manufacturing method |
| CN119997741A (en) * | 2025-03-31 | 2025-05-13 | 惠科股份有限公司 | Display panel and display device |
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| CN102222674A (en) * | 2010-04-16 | 2011-10-19 | 台湾积体电路制造股份有限公司 | Inserted reflective shield to improve quantum efficiency of image sensors |
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| CN1897287A (en) * | 2005-06-30 | 2007-01-17 | 台湾积体电路制造股份有限公司 | Backside Illuminated Semiconductor Devices |
| US20070045513A1 (en) * | 2005-08-30 | 2007-03-01 | Lee Ji S | Image sensors with optical trench |
| CN1988167A (en) * | 2005-12-19 | 2007-06-27 | 恩益禧电子股份有限公司 | Solid state imaging device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108847418A (en) * | 2018-06-15 | 2018-11-20 | 上海微阱电子科技有限公司 | A kind of image sensor structure and forming method enhancing near-infrared quantum efficiency |
| CN109216388A (en) * | 2018-08-10 | 2019-01-15 | 上海集成电路研发中心有限公司 | Enhance the pixel cell structure and forming method of imaging sensor near-infrared performance |
| CN111769131A (en) * | 2020-06-24 | 2020-10-13 | 中国电子科技集团公司第四十四研究所 | A back-illuminated CCD for enhancing near-infrared quantum efficiency and its manufacturing method |
| CN119997741A (en) * | 2025-03-31 | 2025-05-13 | 惠科股份有限公司 | Display panel and display device |
| CN119997741B (en) * | 2025-03-31 | 2025-10-10 | 惠科股份有限公司 | Display panel and display device |
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