CN104007401B - Planarized three-dimensional magnetic sensing chip - Google Patents

Abstract

The invention discloses a planar three-dimensional magnetic sensing chip, which comprises a first magnetic sensor, a second magnetic sensor, a third magnetic sensor and a magnetic beam deflection and concentration structure, wherein the first magnetic sensor, the second magnetic sensor, the third magnetic sensor and the magnetic beam deflection and concentration structure are arranged on a circuit chip substrate, the first magnetic sensor and the second magnetic sensor jointly measure components of magnetic flux in a first direction and a third direction, the third magnetic sensor measures components of the magnetic flux in the second direction, the magnetic beam deflection and concentration structure deflects the components of the magnetic flux in the third direction to the first direction, so that the first magnetic sensor and the second magnetic sensor measure the components of the magnetic flux in the third direction in the first direction, the magnetic beam deflection and concentration structure and other magnetic sensors are completed by a semiconductor manufacturing process, the magnetic sensor in the third direction is not required to be arranged in two sections, and the yield are greatly improved.

Description

Planarized 3D Magnetic Sensing Chip

technical field

The invention relates to a three-dimensional magnetic sensing chip, in particular, the three-dimensional components of the magnetic flux can be measured on the same plane by using a magnetic flux deflection and concentration structure.

Background technique

Magnetic sensors are widely used in various industries, mainly for sensing magnetic fields, such as: earth magnetic field sensors, linear sensors, angle sensors and switch sensors, etc., in order to sense magnetic fields for orientation or positioning. Various changes such as navigation or measurement. With the development of technology, such as car navigation systems and smart phones, as navigation, the demand for magnetic sensors has also increased. With the characteristics of magnetic induction, it can be quickly applied to navigation and global positioning systems. The design of modern electronic products has been merging several devices with different functions into a single electronic product. With the thinner and shorter design of electronic products, the overall product volume is reduced, and the design of the magnetic sensor is also tested.

The traditional magnetic sensor is to set three magnetic sensors with the same structure, and set them in the vertical direction of the same plane to measure the X-axis component and Y-axis component of the magnetic field, and to measure the Z-axis component of the magnetic field. A magnetic sensor needs to be installed vertically with the other two. As the size of integrated circuits is getting smaller and smaller, due to the vertical connection, the process needs to be carried out in two stages, and the process of vertical connection is difficult to standardize the process and the yield rate is difficult. Improvement is prone to failure, which increases the overall cost.

Therefore, there is a need for a sensor structure that can reduce the overall volume and arrange the magnetic sensors in three directions on the same plane to reduce the problems in the manufacturing process.

Contents of the invention

The main purpose of the present invention is to provide a planar three-dimensional magnetic sensing chip, including a circuit chip substrate, a first magnetic sensor, a second magnetic sensor, a third magnetic sensor and a magnetic beam deflection concentration structure, the first magnetic sensor, the second magnetic sensor The second magnetic sensor, the third magnetic sensor and the magnetic beam deflection and concentration structure are arranged on the upper surface of the circuit chip substrate and electrically connected with the circuit in the circuit chip substrate. The first magnetic sensor and the second magnetic sensor jointly measure components of a magnetic flux in a first direction and a third direction. The third magnetic sensor is used for measuring the component of the magnetic flux in the second direction, the second direction and the first direction are perpendicular to each other on a plane, and the third direction is perpendicular to the first direction and the second direction.

The magnetic flux deflection and concentration structure is arranged between the first magnetic sensor and the second magnetic sensor, concentrates the component of the magnetic flux in the third direction, and deflects it to the first direction, so that by the first magnetic flux The sensor and the second magnetic sensor measure the component of the magnetic flux in the third direction in the first direction.

Further, the third magnetic sensor is replaced by a group of fourth magnetic sensor and fifth magnetic sensor, the magnetic beam deflection concentration structure is arranged between the first magnetic sensor and the second magnetic sensor, and the fourth magnetic sensor and the fifth magnetic sensor Between the fifth magnetic sensor, the component of the magnetic flux in a third direction is concentrated and deflected to the first direction or the second direction, and by the first magnetic sensor and the second magnetic sensor in the The component of the magnetic flux in the third direction is measured in the first direction, or the component of the magnetic flux in the third direction is measured in the second direction by the fourth magnetic sensor and the fifth magnetic sensor.

Using the magnetic beam deflection concentration structure to measure the first direction and the second direction of the first magnetic sensor, the second magnetic sensor, the third magnetic sensor (or the fourth magnetic sensor and the fifth magnetic sensor), in the way of semiconductor manufacturing Complete, or pre-prepared and then cut and placed in the configured position, or physically or chemically deposited and etched, or implemented in an embedded structure; using deflected magnetic flux, measured on a plane The three-dimensional magnetic flux does not need to use the traditional two-stage process to install the magnetic sensor in the third direction, which greatly improves the production rate and yield of the magnetic sensor.

Description of drawings

FIG. 1A is a schematic diagram of a first embodiment of a planarized three-dimensional magnetic sensing chip of the present invention;

1B is a schematic diagram of a second embodiment of a planarized three-dimensional magnetic sensing chip of the present invention;

1C is a schematic diagram of a third embodiment of a planarized three-dimensional magnetic sensing chip of the present invention;

2A is a schematic diagram of the distribution of magnetic lines of force in a magnetic beam deflection concentration structure; and

FIG. 2B is a simplified schematic diagram of the magnetic vector of the magnetic beam deflection concentration structure.

Wherein, the reference signs are explained as follows:

1 Planarized 3D magnetic sensing chip

2 Planarized 3D magnetic sensing chip

3 Planarized 3D Magnetic Sensing Chip

10 circuit chip substrate

21 First magnetic sensor

23 Second magnetic sensor

30 Third magnetic sensor

31 Fourth magnetic sensor

33 Fifth magnetic sensor

40 Concentrated magnetic beam deflection structure

detailed description

The implementation of the present invention will be described in more detail below in conjunction with the drawings and component symbols, so that those skilled in the art can implement it by referring to the description.

Referring to FIG. 1A , FIG. 1A is a schematic diagram of a first embodiment of a planarized three-dimensional magnetic sensing chip of the present invention. As shown in FIG. 1A, the planarized three-dimensional magnetic sensing chip 1 of the first embodiment includes a circuit chip substrate 10, a first magnetic sensor 21, a second magnetic sensor 23, a third magnetic sensor 30, and a magnetic flux Deflection concentration structure 40 . The first magnetic sensor 21, the second magnetic sensor 23, the third magnetic sensor 30 and the magnetic beam deflection concentrating structure 40 are all arranged on the upper surface of the circuit chip substrate 10, and are connected with the circuit in the circuit chip substrate 10 (not shown). Visible) electrical connection, the first magnetic sensor 21 and the second magnetic sensor 23 are used to measure the component of the first direction A of the magnetic flux, and the third magnetic sensor 30 is used to measure the component of the second direction B of the magnetic flux, wherein the first The two directions B and the first direction A are perpendicular to each other on a plane. The magnetic flux deflection concentrating structure 40 is arranged between the first magnetic sensor 21 and a second magnetic sensor 23, and the first magnetic sensor 21 and a second magnetic sensor 23 are symmetrical based on the magnetic flux deflection concentrating structure 40, and the third direction C of the magnetic flux The component of the deflection is converted to the first direction A, and the component of the third direction C can be measured by the first magnetic sensor 21 and the second magnetic sensor 23, wherein the third direction C is the same as the first direction A and the second Direction B is both vertical.

Referring to FIG. 1B , FIG. 1B is a schematic diagram of a second embodiment of a planarized three-dimensional magnetic sensing chip of the present invention. As shown in FIG. 1B, the planarized three-dimensional magnetic sensing chip 2 of the second embodiment is substantially similar to the planarized three-dimensional magnetic sensing chip 1 of the first embodiment, except that the first magnetic sensor 21, the second The magnetic sensor 23 changes direction to measure the component of the magnetic flux in the second direction B, and the third magnetic sensor 30 is used to measure the component of the magnetic flux in the first direction A. The magnetic flux deflection concentration structure 40 is arranged between the first magnetic sensor 21 and a second magnetic sensor 23, and converts the component of the magnetic flux in the third direction C into deflection to the second direction B, so that the first magnetic sensor 21 can be used to And the second magnetic sensor 23 measures the component of the third direction C.

Referring to FIG. 1C , FIG. 1C is a schematic diagram of a third embodiment of a planarized three-dimensional magnetic sensing chip of the present invention. As shown in Figure 1C, the planarized three-dimensional magnetic sensing chip 3 of the third embodiment is improved from the planarized three-dimensional magnetic sensing chip 1 of the first embodiment, only the third magnetic sensor 30 is changed to a fourth The magnetic sensor 31 and the fifth magnetic sensor 33 . The first magnetic sensor 21, the second magnetic sensor 23, the fourth magnetic sensor 31, the fifth magnetic sensor 33 and the magnetic beam deflection concentration structure 40 are all arranged on the upper surface of the circuit chip substrate 10, and are connected to the circuit chip substrate 10. The circuit in (not visible) is electrically connected. The first magnetic sensor 21 and the second magnetic sensor 23 are used to measure the component of the first direction A of the magnetic flux, and the fourth magnetic sensor 31 and the fifth magnetic sensor 33 are used to measure the component of the second direction B of the magnetic flux. The magnetic flux deflection concentration structure 40 is arranged between the first magnetic sensor 21 and a second magnetic sensor 23 and between the fourth magnetic sensor 31 and the fifth magnetic sensor 33, and converts the component of the third direction C of the magnetic flux into deflection to The first direction A or the second direction B, and the component of the third direction C can be measured by the first magnetic sensor 21 and the second magnetic sensor 23 , or the fourth magnetic sensor 31 and the fifth magnetic sensor 33 .

Referring to FIG. 2A and FIG. 2B , they are a schematic diagram of the distribution of magnetic force lines and a simplified vector diagram of the magnetic beam deflection concentration structure, respectively. As shown in FIG. 2A , the magnetic flux deflection and concentration structure 40 concentrates the magnetic force lines input from above inside, and outputs them to both sides below the magnetic flux deflection and concentration structure 40 . As shown in FIG. 2B , the foregoing first embodiment is taken as an example. When the magnetic flux in the third direction C is input above the magnetic flux deflection and concentration structure 40, and the magnetic flux in the third direction C is deflected to the first direction A and output toward both sides, so that the first magnetic sensor 21, the first magnetic sensor 21, the first magnetic flux The two magnetic sensors 23 measure the magnetic fluxes A1 and A2 respectively. Since the directions of the magnetic fluxes A1 and A2 are different, the right side is the positive direction, and the magnetic flux in the third direction C is substantially A1-A2. And in the input of the first direction A, when the first magnetic sensor 21 and the second magnetic sensor 23 are arranged in the same direction, when the first magnetic sensor 21 and the second magnetic sensor 23 respectively measure the magnetic fluxes A1 and A2, then the second The magnetic flux in one direction is essentially A1+A2, and the magnetic flux in the third direction is A1-A2; when the first magnetic sensor 21 and the second magnetic sensor 23 are arranged in opposite directions, the magnetic flux in the first direction is essentially A1-A2, and The magnetic flux in the third direction is A1+A2. In this way, it can be clearly distinguished in essence, and the first magnetic sensor 21 and the second magnetic sensor 23 can be used to measure the components of the magnetic flux in the first direction and the third-party quantity. Operations on various axes can be applied.

Understandably, when the first magnetic sensor 21, the second magnetic sensor 23, the fourth magnetic sensor 31, and the fifth magnetic sensor 33 are used, when the first magnetic sensor 21 and the second magnetic sensor 23 are arranged in the same direction, the The addition of the measured magnetic flux components can be the component of the magnetic flux in the first direction or the second direction, and the subtraction of the magnetic flux components can be the component of the magnetic flux in the third direction; otherwise, when the first magnetic sensor 21, the second magnetic flux When the magnetic sensors 23 are arranged in opposite directions, the measured magnetic flux components are subtracted, which can be the component of the magnetic flux in the first direction or the second direction, and the sum of the magnetic flux components is the component of the magnetic flux in the third direction. When the fourth magnetic sensor 31 and the fifth magnetic sensor 33 are arranged in the same direction, the measured magnetic flux components add up, which can be the components of the magnetic flux in the second direction or the first direction. When they are arranged in reverse, the measured magnetic flux components The subtraction can be the component of the magnetic flux in the second direction or the first direction.

Similarly, when the first magnetic sensor 21, the second magnetic sensor 23, the fourth magnetic sensor 31 and the fifth magnetic sensor 33 are used, when the first magnetic sensor 21 and the second magnetic sensor 23 are arranged in the same direction The sum of the measured magnetic flux components can be the components of the magnetic flux in the first direction or the second direction. When the first magnetic sensor 21 and the second magnetic sensor 23 are arranged in opposite directions, the measured magnetic flux components are in phase The subtraction can be the component of the magnetic flux in the first direction or the second direction. When the fourth magnetic sensor 31 and the fifth magnetic sensor 33 are arranged in the same direction, the sum of the measured magnetic flux components can be the magnetic flux in the second direction or the second direction. The component in one direction, and the magnetic flux component subtracted, is the component of the magnetic flux in the third direction; on the contrary, when the reverse is arranged, the measured magnetic flux component is subtracted, which can be the component of the magnetic flux in the second direction or the first direction, The sum of the magnetic flux components is the component of the magnetic flux in the third direction.

The first magnetic sensor 21, the second magnetic sensor 23, and the third magnetic sensor 30 (or the fourth magnetic sensor 31 and the fifth magnetic sensor 33) may be anisotropic magnetic resistance (AMR) components At least one of a giant magnetic resistance (GMR) component and a tunneling magnetic reluctance (TMR) component, each magnetic sensor can form its own independent bridge structure and then be electrically connected to each other, or connected in series in groups For example, the first magnetic sensor 21 and the second magnetic sensor 23 are connected to each other to form a bridge structure, and then the third magnetic sensor 30 independently forming a bridge structure/or the fourth magnetic sensor 31 and the fourth magnetic sensor 31 connected to each other The five magnetic sensors 33 are electrically connected to each other.

The first magnetic sensor 21, the second magnetic sensor 23, and the third magnetic sensor 30 (or the fourth magnetic sensor 31 and the fifth magnetic sensor 33) can be independently manufactured and assembled on the circuit chip substrate 10. , or directly formed on the circuit chip substrate 10 by physical or chemical deposition and etching.

The bottom surface of the magnetic beam deflection concentration structure 40 is coplanar with the first magnetic sensor 21, the second magnetic sensor 23, the third magnetic sensor 30 (or the fourth magnetic sensor 31 and the fifth magnetic sensor 33) or slightly higher than or slightly below the plane of the magnetic sensing component. The magnetic beam deflecting and concentrating structure 40 is columnar, and it can be a solid cylinder, an angular column, or a polygonal column with any aspect ratio, and its magnetic permeability (permeability) is 1-10000H/m, and it is a metallic magnetic material or Ceramic magnetic material, the metallic magnetic material is at least one of iron, cobalt, nickel, iron-cobalt alloy, cobalt-nickel alloy, iron-nickel alloy, iron-cobalt-nickel alloy and cobalt-iron-boron compound. The ceramic magnetic material is ferrimagnets, and its crystal structure is at least one of spinel, anti-spinel and perovskite.

The magnetic beam deflection concentration structure 40 can be pre-prepared, cut and placed on the circuit chip substrate 10, or it can be physically or chemically deposited and etched directly on the circuit chip substrate 10, for example, The columnar holes are pre-etched on the circuit chip substrate 10 , and then filled with physical or chemical deposition and then leveled.

The feature of the present invention is that the magnetic beam deflection concentration structure can be used with the first magnetic sensor, the second magnetic sensor, the third magnetic sensor (or the fourth magnetic sensor and the fifth magnetic sensor) for measuring the first direction and the second direction, It is completed in the way of semiconductor manufacturing process, and uses the method of deflecting magnetic flux to measure the three-dimensional magnetic flux on the plane, without using the traditional two-stage process to install the magnetic sensor in the third direction, which greatly improves the magnetic field. Sensor production rate and yield.

The above-mentioned are only preferred embodiments for explaining the present invention, and are not intended to limit the present invention in any form. Therefore, any modification or change of the present invention made under the same spirit of the invention, All should still be included in the category that the present invention intends to protect.

Claims (25)

1. A planarized three-dimensional magnetic sensing chip, characterized in that, comprising: A circuit chip substrate; A first magnetic sensor arranged on the upper surface of the circuit chip substrate; a second magnetic sensor, disposed on the upper surface of the circuit chip substrate, and jointly measure a component of a magnetic flux in a first direction and a third direction with the first magnetic sensor; A third magnetic sensor, arranged on the upper surface of the circuit chip substrate, is used to measure the component of the magnetic flux in a second direction, wherein the second direction and the first direction are perpendicular to each other on a plane, and the first three directions are perpendicular to the first direction and the second direction; and A magnetic flux deflection and concentration structure, arranged on the upper surface of the circuit chip substrate, between the first magnetic sensor and the second magnetic sensor, concentrates the component of the magnetic flux in the third direction, and deflects it to the a first direction, and the component of the magnetic flux in the third direction is measured by the first magnetic sensor and the second magnetic sensor in the first direction, Wherein the first magnetic sensor, the second magnetic sensor, the third magnetic sensor and the magnetic beam deflection concentrating structure are electrically connected to a circuit in the circuit chip substrate, and the first magnetic sensor and the second magnetic sensor are based on The magnetic beam deflection concentration structure is symmetrical. 2 . The planarized three-dimensional magnetic sensing chip according to claim 1 , wherein the magnetic beam deflecting and concentrating structure is columnar, and is one of a solid cylinder and a polygonal column. 3 . 3. The planarized three-dimensional magnetic sensing chip according to claim 1, wherein the magnetic beam deflection concentrating structure is a metallic magnetic material or a ceramic magnetic material, and the magnetic beam deflection concentrating structure The magnetic permeability is 1~10000H/m. 4. The planarized three-dimensional magnetic sensing chip as claimed in claim 3, wherein the metallic magnetic material is iron, cobalt, nickel, iron-cobalt alloy, cobalt-nickel alloy, iron-nickel alloy, iron-cobalt-nickel alloy Alloys and at least one of cobalt-iron-boron compounds. 5. The planarized three-dimensional magnetic sensing chip as claimed in claim 3, wherein the ceramic magnetic material is a ferrite magnet, and the crystal structure of the ceramic magnetic material is spinel, reverse spinel and calcium At least one of the iron ore. 6. The planarized three-dimensional magnetic sensing chip according to claim 1, wherein if the first magnetic sensor and the second magnetic sensor are arranged in the same direction, the obtained magnetic flux components are added together is the component of the magnetic flux in the first direction, and the subtraction of the obtained magnetic flux component is the component of the magnetic flux in the third direction; The component of the first direction and the magnetic flux components obtained by adding them together are the components of the magnetic flux in the third direction; and the third magnetic sensor independently measures the component of the magnetic flux in the second direction. 7. The planarized three-dimensional magnetic sensing chip according to claim 1, wherein the first magnetic sensor, the second magnetic sensor and the third magnetic sensor are anisotropic magnetoresistive components, giant magnetic At least one of the resistive component and the tunneling magnetoresistive component, the first magnetic sensor, the second magnetic sensor, and the third magnetic sensor form an independent bridge structure and are electrically connected to each other, or the first magnetic sensor, the second magnetic sensor After the two magnetic sensors are connected to form a bridge structure, they are then connected to the third magnetic sensor of the independent bridge structure. 8. The planarized three-dimensional magnetic sensing chip according to claim 1, wherein the first magnetic sensor, the second magnetic sensor and the third magnetic sensor are manufactured independently and assembled in the circuit on the chip substrate. 9. The planarized three-dimensional magnetic sensing chip as claimed in claim 1, wherein the first magnetic sensor, the second magnetic sensor and the third magnetic sensor are directly on the circuit chip substrate to physically or Formed by chemical deposition and etching. 10. The planarized three-dimensional magnetic sensing chip according to claim 1, wherein the bottom surface of the magnetic beam deflection concentrating structure is coplanar with the first magnetic sensor, the second magnetic sensor, and the third magnetic sensor Or slightly higher or slightly lower than the plane of the first magnetic sensor, the second magnetic sensor, and the third magnetic sensor. 11 . The planarized three-dimensional magnetic sensing chip according to claim 1 , wherein the magnetic beam deflection concentration structure is pre-prepared and then cut and placed at the configured position. 12 . The planarized three-dimensional magnetic sensing chip according to claim 1 , wherein the magnetic beam deflection concentration structure is formed on the circuit chip substrate by physical or chemical deposition and etching. 13 . 13. A planarized three-dimensional magnetic sensing chip, characterized in that it comprises: A circuit chip substrate; A first magnetic sensor arranged on the upper surface of the circuit chip substrate; a second magnetic sensor, disposed on the upper surface of the circuit chip substrate, and jointly measure a magnetic flux component in a first direction with the first magnetic sensor; A fourth magnetic sensor is arranged on the upper surface of the circuit chip substrate; A fifth magnetic sensor, arranged on the upper surface of the circuit chip substrate, and jointly measuring a magnetic flux component in a second direction with the fourth magnetic sensor, the second direction and the first direction are perpendicular to each other on a plane; as well as A magnetic beam deflection concentration structure is arranged on the upper surface of the circuit chip substrate, between the first magnetic sensor and the second magnetic sensor, and between the fourth magnetic sensor and the fifth magnetic sensor, and the The component of the magnetic flux in a third direction is concentrated and deflected to the first direction or the second direction, and the magnetic flux in the first direction is measured by the first magnetic sensor and the second magnetic sensor in the The component of the third direction, or the component of the magnetic flux in the third direction measured by the fourth magnetic sensor and the fifth magnetic sensor in the second direction, Wherein the third direction is perpendicular to the first direction and the second direction, wherein the first magnetic sensor, the second magnetic sensor, the fourth magnetic sensor, the fifth magnetic sensor and the magnetic beam deflection concentrating structure and the circuit A circuit in the chip substrate is electrically connected, the first magnetic sensor is symmetrical to the second magnetic sensor, and the fourth magnetic sensor is symmetrical to the fifth magnetic sensor based on the magnetic beam deflection concentration structure. 14 . The planarized three-dimensional magnetic sensing chip according to claim 13 , wherein the magnetic beam deflecting and concentrating structure is columnar, and is one of a solid cylinder and a polygonal column. 15. The planarized three-dimensional magnetic sensing chip as claimed in claim 13, wherein the magnetic beam deflection concentrating structure is a metallic magnetic material or a ceramic magnetic material, and the magnetic beam deflection concentrating structure The magnetic permeability is 1~10000H/m. 16. The planarized three-dimensional magnetic sensing chip as claimed in claim 15, wherein the metallic magnetic material is iron, cobalt, nickel, iron-cobalt alloy, cobalt-nickel alloy, iron-nickel alloy, iron-cobalt-nickel alloy Alloys and at least one of cobalt-iron-boron compounds. 17. The planarized three-dimensional magnetic sensing chip according to claim 15, wherein the ceramic magnetic material is a ferrite magnet, and the crystal structure of the ceramic magnetic material is spinel, inverse spinel and calcium At least one of the iron ore. 18. The planarized three-dimensional magnetic sensing chip according to claim 13, wherein the first magnetic sensor, the second magnetic sensor, the fourth magnetic sensor and the fifth magnetic sensor are anisotropic At least one of the magneto-resistance component, the giant magneto-resistance component and the tunneling magneto-resistance component, the first magnetic sensor, the second magnetic sensor, the fourth magnetic sensor and the fifth magnetic sensor form an independent bridge structure and then mutually electrical connection, or the first magnetic sensor and the second magnetic sensor are connected to form a bridge structure, and then connected to the fourth magnetic sensor and the fifth magnetic sensor forming a connection bridge. 19. The planarized three-dimensional magnetic sensing chip according to claim 13, wherein the first magnetic sensor, the second magnetic sensor, the fourth magnetic sensor and the fifth magnetic sensor are manufactured independently , and then assembled on the circuit chip substrate. 20. The planarized three-dimensional magnetic sensing chip according to claim 13, wherein the first magnetic sensor, the second magnetic sensor, the fourth magnetic sensor and the fifth magnetic sensor are directly connected to the circuit chip The substrate is formed by physical or chemical deposition and etching. 21. The planarized three-dimensional magnetic sensing chip according to claim 13, wherein the bottom surface of the magnetic beam deflection concentrating structure is in contact with the first magnetic sensor, the second magnetic sensor, the fourth magnetic sensor and the The fifth magnetic sensor is coplanar or slightly higher or slightly lower than the plane of the first magnetic sensor, the second magnetic sensor, the fourth magnetic sensor, and the fifth magnetic sensor. 22 . The planarized three-dimensional magnetic sensing chip according to claim 13 , wherein the magnetic beam deflection concentration structure is pre-prepared and then cut and placed at the configured position. 23. The planarized three-dimensional magnetic sensing chip of claim 13, wherein the magnetic beam deflection concentration structure is formed on the circuit chip substrate by physical or chemical deposition and etching. 24. The planarized three-dimensional magnetic sensing chip as claimed in claim 13, wherein when the first magnetic sensor and the second magnetic sensor are arranged in the same direction, the measured magnetic flux components add up to be The component of the magnetic flux in the first direction or the second direction, and the subtraction of the magnetic flux components is the component of the magnetic flux in the third direction; conversely, when the first magnetic sensor and the second magnetic sensor are arranged in reverse, The subtraction of the measured magnetic flux components is the component of the magnetic flux in the first direction or the second direction, and the addition of the magnetic flux components is the component of the magnetic flux in the third direction, and the fourth magnetic sensor When the fifth magnetic sensors are arranged in the same direction, the measured magnetic flux components are added to form the components of the magnetic flux in the second direction or the first direction; when they are arranged in opposite directions, the measured magnetic flux components are subtracted , is the component of the magnetic flux in the second direction or the first direction. 25. The planarized three-dimensional magnetic sensing chip as claimed in claim 13, wherein when the first magnetic sensor and the second magnetic sensor are arranged in the same direction, the measured magnetic flux components add up to be The component of the magnetic flux in the first direction or the second direction, and when the first magnetic sensor and the second magnetic sensor are arranged in opposite directions, the measured magnetic flux components are subtracted to obtain the magnetic flux in the first direction Or the component in the second direction, and when the fourth magnetic sensor and the fifth magnetic sensor are arranged in the same direction, the measured magnetic flux components are summed up, which is the component of the magnetic flux in the second direction or the first direction , and the subtraction of the magnetic flux components is the component of the magnetic flux in the third direction; when the fourth magnetic sensor and the fifth magnetic sensor are arranged in reverse, the measured magnetic flux components are subtracted, which is the magnetic flux in the The component of the second direction or the first direction, and the sum of the magnetic flux components is the component of the magnetic flux in the third direction.