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CH506188A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
CH506188A
CH506188A CH1309970A CH1309970A CH506188A CH 506188 A CH506188 A CH 506188A CH 1309970 A CH1309970 A CH 1309970A CH 1309970 A CH1309970 A CH 1309970A CH 506188 A CH506188 A CH 506188A
Authority
CH
Switzerland
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Application number
CH1309970A
Other languages
German (de)
Inventor
Peter Dr Wolf
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Priority to CH1309970A priority Critical patent/CH506188A/en
Publication of CH506188A publication Critical patent/CH506188A/en
Priority to FR7126003A priority patent/FR2105175B1/fr
Priority to DE2134528A priority patent/DE2134528B2/en
Priority to JP5910871A priority patent/JPS55913B1/ja
Priority to GB3985871A priority patent/GB1332060A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10P32/00—
    • H10P95/00—
CH1309970A 1970-09-02 1970-09-02 Field effect transistor CH506188A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CH1309970A CH506188A (en) 1970-09-02 1970-09-02 Field effect transistor
FR7126003A FR2105175B1 (en) 1970-09-02 1971-07-06
DE2134528A DE2134528B2 (en) 1970-09-02 1971-07-10 Field effect transistor, method for its production and use of the field effect transistor in an integrated circuit
JP5910871A JPS55913B1 (en) 1970-09-02 1971-08-06
GB3985871A GB1332060A (en) 1970-09-02 1971-08-25 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1309970A CH506188A (en) 1970-09-02 1970-09-02 Field effect transistor

Publications (1)

Publication Number Publication Date
CH506188A true CH506188A (en) 1971-04-15

Family

ID=4389292

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1309970A CH506188A (en) 1970-09-02 1970-09-02 Field effect transistor

Country Status (5)

Country Link
JP (1) JPS55913B1 (en)
CH (1) CH506188A (en)
DE (1) DE2134528B2 (en)
FR (1) FR2105175B1 (en)
GB (1) GB1332060A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2235465A1 (en) * 1971-09-30 1973-04-19 Ibm SEMICONDUCTOR SWITCH OR STORAGE DEVICE

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114582835B (en) * 2022-05-05 2022-07-29 长鑫存储技术有限公司 Anti-fuse structure and manufacturing method thereof, anti-fuse array and storage device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE14941C (en) * M. MERKELBACH in Grenzhausen bei Coblenz Clay pots with transparent walls
DE1067936B (en) * 1958-02-04 1959-10-29
NL300609A (en) * 1958-06-14 1967-06-26
US3150299A (en) * 1959-09-11 1964-09-22 Fairchild Camera Instr Co Semiconductor circuit complex having isolation means
US3344322A (en) * 1965-01-22 1967-09-26 Hughes Aircraft Co Metal-oxide-semiconductor field effect transistor
US3519479A (en) * 1965-12-16 1970-07-07 Matsushita Electronics Corp Method of manufacturing semiconductor device
CH461646A (en) * 1967-04-18 1968-08-31 Ibm Field-effect transistor and process for its manufacture
CH476398A (en) * 1968-03-01 1969-07-31 Ibm Process for producing fine etched patterns
CH484517A (en) * 1968-06-28 1970-01-15 Ibm Method for applying a substance to a limited surface area of a semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2235465A1 (en) * 1971-09-30 1973-04-19 Ibm SEMICONDUCTOR SWITCH OR STORAGE DEVICE
FR2154538A1 (en) * 1971-09-30 1973-05-11 Ibm

Also Published As

Publication number Publication date
GB1332060A (en) 1973-10-03
DE2134528A1 (en) 1972-04-13
FR2105175B1 (en) 1976-05-28
JPS55913B1 (en) 1980-01-10
FR2105175A1 (en) 1972-04-28
DE2134528B2 (en) 1979-04-19

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Legal Events

Date Code Title Description
PL Patent ceased