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CH474858A - Verfahren zur Herstellung einer planaren doppeldiffundierten Halbleiteranordnung - Google Patents

Verfahren zur Herstellung einer planaren doppeldiffundierten Halbleiteranordnung

Info

Publication number
CH474858A
CH474858A CH256368A CH256368A CH474858A CH 474858 A CH474858 A CH 474858A CH 256368 A CH256368 A CH 256368A CH 256368 A CH256368 A CH 256368A CH 474858 A CH474858 A CH 474858A
Authority
CH
Switzerland
Prior art keywords
producing
semiconductor device
double diffused
planar double
diffused semiconductor
Prior art date
Application number
CH256368A
Other languages
English (en)
Inventor
Meer Winfried
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH474858A publication Critical patent/CH474858A/de

Links

Classifications

    • H10W74/43—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C23C16/345—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P95/00—
    • H10W74/40—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/923—Diffusion through a layer

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
CH256368A 1967-02-23 1968-02-21 Verfahren zur Herstellung einer planaren doppeldiffundierten Halbleiteranordnung CH474858A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1614435A DE1614435B2 (de) 1967-02-23 1967-02-23 Verfahren zum Herstellen von aus Germanium bestehenden, doppeldiffundierten Halbleiteranordnungen

Publications (1)

Publication Number Publication Date
CH474858A true CH474858A (de) 1969-06-30

Family

ID=7528823

Family Applications (1)

Application Number Title Priority Date Filing Date
CH256368A CH474858A (de) 1967-02-23 1968-02-21 Verfahren zur Herstellung einer planaren doppeldiffundierten Halbleiteranordnung

Country Status (7)

Country Link
US (1) US3753805A (de)
AT (1) AT273234B (de)
CH (1) CH474858A (de)
DE (1) DE1614435B2 (de)
FR (1) FR1555090A (de)
GB (1) GB1159637A (de)
NL (1) NL6716040A (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0024305A1 (de) * 1979-08-16 1981-03-04 International Business Machines Corporation Verfahren zum Aufbringen von SiO2-Filmen mittels chemischen Niederschlagens aus der Dampfphase
EP0229488A1 (de) * 1985-12-05 1987-07-22 Anicon, Inc. Ätzresistenter Behälter für Halbleiterscheiben und Herstellungsverfahren

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2020531C2 (de) * 1970-04-27 1982-10-21 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von Silizium-Höchstfrequenz-Planartransistoren
US3860461A (en) * 1973-05-29 1975-01-14 Texas Instruments Inc Method for fabricating semiconductor devices utilizing composite masking
FR2281650A1 (fr) * 1974-08-06 1976-03-05 Telecommunications Sa Procede de fabrication d'une photodiode sensible aux rayonnements infrarouges et photodiode obtenue par ce procede

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3331716A (en) * 1962-06-04 1967-07-18 Philips Corp Method of manufacturing a semiconductor device by vapor-deposition
US3342650A (en) * 1964-02-10 1967-09-19 Hitachi Ltd Method of making semiconductor devices by double masking
US3388000A (en) * 1964-09-18 1968-06-11 Texas Instruments Inc Method of forming a metal contact on a semiconductor device
US3477886A (en) * 1964-12-07 1969-11-11 Motorola Inc Controlled diffusions in semiconductive materials
US3484313A (en) * 1965-03-25 1969-12-16 Hitachi Ltd Method of manufacturing semiconductor devices
US3597667A (en) * 1966-03-01 1971-08-03 Gen Electric Silicon oxide-silicon nitride coatings for semiconductor devices
US3438873A (en) * 1966-05-11 1969-04-15 Bell Telephone Labor Inc Anodic treatment to alter solubility of dielectric films
US3432920A (en) * 1966-12-01 1969-03-18 Rca Corp Semiconductor devices and methods of making them
US3437533A (en) * 1966-12-13 1969-04-08 Rca Corp Method of fabricating semiconductor devices
GB1147014A (en) * 1967-01-27 1969-04-02 Westinghouse Electric Corp Improvements in diffusion masking
US3537921A (en) * 1967-02-28 1970-11-03 Motorola Inc Selective hydrofluoric acid etching and subsequent processing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0024305A1 (de) * 1979-08-16 1981-03-04 International Business Machines Corporation Verfahren zum Aufbringen von SiO2-Filmen mittels chemischen Niederschlagens aus der Dampfphase
EP0229488A1 (de) * 1985-12-05 1987-07-22 Anicon, Inc. Ätzresistenter Behälter für Halbleiterscheiben und Herstellungsverfahren

Also Published As

Publication number Publication date
US3753805A (en) 1973-08-21
DE1614435A1 (de) 1970-03-05
DE1614435B2 (de) 1979-05-23
AT273234B (de) 1969-08-11
NL6716040A (de) 1968-08-26
GB1159637A (en) 1969-07-30
FR1555090A (de) 1969-01-24

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Legal Events

Date Code Title Description
PL Patent ceased