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CH453506A - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
CH453506A
CH453506A CH1604365A CH1604365A CH453506A CH 453506 A CH453506 A CH 453506A CH 1604365 A CH1604365 A CH 1604365A CH 1604365 A CH1604365 A CH 1604365A CH 453506 A CH453506 A CH 453506A
Authority
CH
Switzerland
Prior art keywords
semiconductor component
semiconductor
component
Prior art date
Application number
CH1604365A
Other languages
English (en)
Inventor
Shockley William
Original Assignee
Int Standard Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Int Standard Electric Corp filed Critical Int Standard Electric Corp
Publication of CH453506A publication Critical patent/CH453506A/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/825—Diodes having bulk potential barriers, e.g. Camel diodes, planar doped barrier diodes or graded bandgap diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
CH1604365A 1964-11-23 1965-11-22 Halbleiterbauelement CH453506A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US412959A US3398334A (en) 1964-11-23 1964-11-23 Semiconductor device having regions of different conductivity types wherein current is carried by the same type of carrier in all said regions

Publications (1)

Publication Number Publication Date
CH453506A true CH453506A (de) 1968-06-14

Family

ID=23635189

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1604365A CH453506A (de) 1964-11-23 1965-11-22 Halbleiterbauelement

Country Status (8)

Country Link
US (1) US3398334A (de)
BE (1) BE672697A (de)
CH (1) CH453506A (de)
DE (1) DE1514061A1 (de)
ES (1) ES319939A1 (de)
FR (1) FR1454807A (de)
GB (1) GB1103796A (de)
NL (1) NL6515147A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4828114B1 (de) * 1966-10-29 1973-08-29
CH516874A (de) * 1970-05-26 1971-12-15 Bbc Brown Boveri & Cie Halbleiterbauelement
DE2323592C2 (de) * 1972-06-09 1981-09-17 BBC AG Brown, Boveri & Cie., Baden, Aargau Thyristor
DE3441922C2 (de) * 1984-11-16 1986-10-02 Messerschmitt-Bölkow-Blohm GmbH, 8012 Ottobrunn Fotokathode für den Infrarotbereich
DE3650250D1 (de) * 1985-07-12 1995-04-06 Hewlett Packard Co Detektor und mischdiode mit null-polarisationsspannung und herstellungsverfahren.
JPH0766981B2 (ja) * 1987-03-26 1995-07-19 日本電気株式会社 赤外線センサ
GB8817459D0 (en) * 1988-07-22 1988-08-24 Gen Electric Semiconductor devices
US8270131B2 (en) 2009-07-31 2012-09-18 Infineon Technologies Ag Electrostatic discharge protection element and electrostatic discharge protection chip and method of producing the same
US8530902B2 (en) * 2011-10-26 2013-09-10 General Electric Company System for transient voltage suppressors

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL91725C (de) * 1952-12-16
US2838617A (en) * 1953-01-13 1958-06-10 Philips Corp Circuit-arrangement comprising a four-zone transistor
US2777101A (en) * 1955-08-01 1957-01-08 Cohen Jerrold Junction transistor
US2981849A (en) * 1956-01-09 1961-04-25 Itt Semiconductor diode
US2869084A (en) * 1956-07-20 1959-01-13 Bell Telephone Labor Inc Negative resistance semiconductive device
US2980810A (en) * 1957-12-30 1961-04-18 Bell Telephone Labor Inc Two-terminal semiconductive switch having five successive zones
NL260007A (de) * 1960-01-14
NL275617A (de) * 1961-03-10
US3279963A (en) * 1963-07-23 1966-10-18 Ibm Fabrication of semiconductor devices

Also Published As

Publication number Publication date
FR1454807A (fr) 1966-10-07
NL6515147A (de) 1966-05-24
BE672697A (de) 1966-05-23
ES319939A1 (es) 1966-05-01
DE1514061A1 (de) 1969-06-12
GB1103796A (en) 1968-02-21
US3398334A (en) 1968-08-20

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