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CH459041A - Process for connecting graphite parts with parts made of silicon carbide, quartz glass or graphite - Google Patents

Process for connecting graphite parts with parts made of silicon carbide, quartz glass or graphite

Info

Publication number
CH459041A
CH459041A CH93166A CH93166A CH459041A CH 459041 A CH459041 A CH 459041A CH 93166 A CH93166 A CH 93166A CH 93166 A CH93166 A CH 93166A CH 459041 A CH459041 A CH 459041A
Authority
CH
Switzerland
Prior art keywords
graphite
parts
solder
silicide
carbide layer
Prior art date
Application number
CH93166A
Other languages
German (de)
Inventor
Nat Rubisch Ottmar Dipl-Ch Rer
Schmitt Reinhold
Original Assignee
Sigri Elektrographit Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sigri Elektrographit Gmbh filed Critical Sigri Elektrographit Gmbh
Publication of CH459041A publication Critical patent/CH459041A/en

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    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/04Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/001Interlayers, transition pieces for metallurgical bonding of workpieces
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24Selection of soldering or welding materials proper
    • B23K35/32Selection of soldering or welding materials proper with the principal constituent melting at more than 1550 degrees C
    • B23K35/327Selection of soldering or welding materials proper with the principal constituent melting at more than 1550 degrees C comprising refractory compounds, e.g. carbides
    • CCHEMISTRY; METALLURGY
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    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/003Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
    • C04B37/005Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of glass or ceramic material
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    • C04B37/00Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/003Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
    • C04B37/006Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts consisting of metals or metal salts
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    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6567Treatment time
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    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04Ceramic interlayers
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    • C04B2237/083Carbide interlayers, e.g. silicon carbide interlayers
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    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
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    • C04B2237/16Silicon interlayers
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    • C04B2237/363Carbon
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    • C04B2237/30Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
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    • C04B2237/365Silicon carbide
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    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
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    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/60Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface
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    • C04B2237/00Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
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    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
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    • C04B2237/50Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/72Forming laminates or joined articles comprising at least two interlayers directly next to each other
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    • C04B2237/76Forming laminates or joined articles comprising at least one member in the form other than a sheet or disc, e.g. two tubes or a tube and a sheet or disc
    • C04B2237/765Forming laminates or joined articles comprising at least one member in the form other than a sheet or disc, e.g. two tubes or a tube and a sheet or disc at least one member being a tube
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    • C04B2237/80Joining the largest surface of one substrate with a smaller surface of the other substrate, e.g. butt joining or forming a T-joint
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    • C04B2237/84Joining of a first substrate with a second substrate at least partially inside the first substrate, where the bonding area is at the inside of the first substrate, e.g. one tube inside another tube

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Products (AREA)

Description

       

  Verfahren zum Verbinden von Graphitteilen  mit Teilen aus Siliziumkarbid, Quarzglas oder Graphit    Die vorliegende Erfindung betrifft ein     Verfahren    zum  Verbinden von Graphitteilen mit Teilen aus Silizium  karbid, Quarzglas oder Graphit mit Hilfe eines Lotes aus  einem Metallsilizid.  



  Es ist bereits bekannt, dass zwei Kohlenstoffkörper,  z.B. aus Graphit miteinander verbunden werden kön  nen, indem Silizium bzw. Metallsilizide, wie z.B. Silizide  des Molybdäns, Wolframs, Titans, Zirkons, Tantals oder  Chroms, in geschmolzenem Zustand unter nicht oxy  dierenden Bedingungen zwischen die zu verbindenden  Flächen der Körper gebracht werden und anschliessend  abgekühlt werden. Die Aufbringung der Metallsilizide  bzw. des Siliziums kann entweder durch Tauchen in die  Schmelze oder aber auch durch Aufbringen des Lotes  in festem Zustand, z.B. in Form einer Suspension, erfol  gen. Wird eine solche Verbindungsstelle längere Zeit  höheren Temperaturen, z.B. 800  C, ausgesetzt, so tritt  eine Reaktion des Metallsilizids mit dem Kohlenstoff  zu Siliziumkarbid ein.

   Gleichzeitig steigt die Durchläs  sigkeit der Verbindungsstelle für Gase derart an, dass  eine Verwendung für Zwecke, in denen eine gasdichte  Verbindung verlangt wird, nicht mehr infrage kommt.  



  Der vorliegenden Erfindung liegt die Aufgabe zu  grunde, eine gasdichte Verbindung zwischen Graphit  teilen und anderen Teilen aus Graphit, Siliziumkarbid  oder Quarzglas herzustellen, die auch bei länger dauern  der Beanspruchung unter hohen Temperaturen ihre  Gasdichtheit beibehält. Derartige Verbindungen werden  vor allem benötigt für Reaktorzwecke. Die Verbindung  soll zu diesem Zweck bei hohen Temperaturen     oxyda-          tions-    und temperaturwechselbeständig sein.  



  Diese Aufgabe wird durch ein     Verfahren    der ein  gangs beschriebenen Art gelöst, bei dem     erfindungsge-          mäss    die zu verbindenden Graphitflächen vor     Auftra-          gung    des Lotes mit einer diffusionshemmenden Schicht  aus Karbiden überzogen werden. Diese Karbidzwischen  schicht verhindert eine Reaktion des Metallsilizidlotes  mit dem Kohlenstoff, so dass auch bei länger dauernder    Hochtemperaturbeanspruchung die Gasdichtheit der  Verbindung erhalten bleibt. Ein weiterer Vorteil der Er  findung besteht noch darin, dass die Karbidzwischen  schicht das Eindringen des geschmolzenen Lotes in die  Poren der zu verbindenden Kohlenstoffteile vermindert.  Hierdurch wird der Lotverbrauch erheblich herabge  setzt.  



  Als besonders geeignet haben sich Titan-,     Zirkon-          oder    Niobsilizide einzeln oder zu mehreren als Lot er  wiesen. Entsprechend besteht die Karbidzwischenschicht  vorzugsweise aus Karbiden des Titans, Zirkons, Niobs  oder des Siliziums,     wiederum    einzeln oder zu mehreren.  



  Die Ausbildung der Karbidzwischenschicht auf der  Verbindungsfläche der zu verbindenden Graphitteile er  folgt am einfachsten dadurch, dass das entsprechende  Metallsilizid auf die Graphitfläche aufgetragen wird und  diese hierauf einer Wärmebehandlung unterworfen wird,  wobei das Metallsilizid mit dem Kohlenstoff unter Bil  dung von Karbiden reagiert. Zweckmässigerweise wird  für die Herstellung der Karbidschicht das gleiche Silizid  aufgetragen, das im folgenden Arbeitsschritt auch als  Lot verwendet wird.  



  Die Karbidzwischenschicht soll vorzugsweise eine  Dicke von 1 bis     40.i,    insbesondere 5 bis 25     p    und eine  Permeabilität von K = 10-7 bis 10-1 cm=/ sec aufweisen.  



  Zur Herstellung der Verbindungsstelle zwischen den  verschiedenen Graphitteilen bzw. den Graphit- und Si  liziumkarbid oder Quarzglasteilen hat es sich als     zweck-          mässig    erwiesen, das Metallsilizidlot, ggf. mit einem Zu  satz von 50     Gew.%    des entsprechenden Metallkarbids,  pulverförmig auf die zu verbindende Stelle aufzubringen  und dort indirekt kurzzeitig bis zum Schmelzpunkt des       Silizid    s zu erhitzen.  



  Die weitere Erläuterung der Erfindung und ihrer  Vorteile erfolgt nun anhand eines     Ausführungsbeispieles.     <I>Ausführungsbeispiel</I>  Ein Rohr aus     ESw-.Graphit    mit einem Aussendurch  messer von 20 mm und einer Wandstärke von 2 mm      sollte durch Auflöten eines Graphitplättchens ebenfalls  aus ESw-Graphit dicht verschlossen werden. Solche  Röhrchen 1 sind in Fig. 1 und 2 zusammen mit den  verschliessenden Graphitplättchen 2 dargestellt. Die zu  verbindenden Flächen wurden mit einer Aufschlemmung  von Titansilizid in einer 2%igen Polyvinyllösung in  Wasser bestrichen und hierauf unter Argonspülung etwa  1 Stunde lang auf 1700  C erhitzt. Hierbei wird das  aufgebrachte Titansilizid fast vollständig in Karbid um  gewandelt.

   Dann wurden die Verschlussplättchen auf  einer Seite nochmals mit einer Aufschlemmung von     Ti-          tansilizid    in einer 2%igen Polyvinylwasserlösung be  strichen und auf das Rohr 1 aufgesetzt. Nach einer  kurzen Trocknung wurden die beiden oberflächlich an  einander haftenden Teile unter Argonspülung auf 1600 C  erhitzt und     1/2    Minute lang auf dieser Temperatur ge  halten. Die Aufheizzeit betrug ca. 1/2 Minute, die Ab  kühlzeit ca. 3 Minuten. Die Messung der Permeabilität  ergab einen Durchschnittswert von 4,8 X l0-4 cm2/sec.  Zur Feststellung der Hochtemperaturfestigkeit der Ver  bindung wurden die so verschlossenen Rohre 500 Std.  lang unter Argonspülung auf 800  C gehalten.

   Eine hier  nach vorgenommene Messung der Permeabilität ergab,  dass sich diese nicht verändert hatte.



  Method for connecting graphite parts to parts made of silicon carbide, quartz glass or graphite The present invention relates to a method for connecting graphite parts to parts made of silicon carbide, quartz glass or graphite with the aid of a solder made from a metal silicide.



  It is already known that two carbon bodies, e.g. made of graphite can be connected to one another by using silicon or metal silicides, e.g. Silicides of molybdenum, tungsten, titanium, zirconium, tantalum or chromium are brought in a molten state under non-oxidizing conditions between the surfaces to be connected of the body and are then cooled. The application of the metal silicides or the silicon can either be done by dipping into the melt or by applying the solder in a solid state, e.g. in the form of a suspension. If such a joint is used at higher temperatures for a long time, e.g. If exposed to 800 C, the metal silicide reacts with the carbon to form silicon carbide.

   At the same time, the permeability of the connection point for gases increases to such an extent that it can no longer be used for purposes in which a gas-tight connection is required.



  The present invention is based on the object to share a gas-tight connection between graphite and other parts made of graphite, silicon carbide or quartz glass, which retains its gas-tightness even with prolonged exposure to high temperatures. Such compounds are required above all for reactor purposes. For this purpose, the connection should be resistant to oxidation and temperature changes at high temperatures.



  This object is achieved by a method of the type described at the beginning, in which, according to the invention, the graphite surfaces to be connected are coated with a diffusion-inhibiting layer of carbides before the solder is applied. This intermediate carbide layer prevents the metal silicide solder from reacting with the carbon, so that the connection remains gas-tight even when exposed to long-term high-temperature loads. Another advantage of the invention is that the intermediate carbide layer reduces the penetration of the molten solder into the pores of the carbon parts to be joined. This considerably reduces the amount of solder used.



  Titanium, zirconium or niobium silicides have been found to be particularly suitable individually or in groups as solder. Accordingly, the carbide intermediate layer preferably consists of carbides of titanium, zirconium, niobium or silicon, again individually or in groups.



  The easiest way to form the intermediate carbide layer on the connecting surface of the graphite parts to be connected is to apply the corresponding metal silicide to the graphite surface and then subject it to a heat treatment, the metal silicide reacting with the carbon to form carbides. The same silicide is expediently applied to produce the carbide layer that is also used as solder in the following work step.



  The carbide intermediate layer should preferably have a thickness of 1 to 40.i, in particular 5 to 25 µm and a permeability of K = 10-7 to 10-1 cm = / sec.



  To produce the connection point between the various graphite parts or the graphite and silicon carbide or quartz glass parts, it has proven to be useful to apply the metal silicide solder, possibly with an addition of 50% by weight of the corresponding metal carbide, in powder form to the metal to be connected Place and indirectly heat there briefly to the melting point of the silicide.



  The invention and its advantages will now be explained further using an exemplary embodiment. <I> Exemplary embodiment </I> A tube made of ESw graphite with an outside diameter of 20 mm and a wall thickness of 2 mm should be tightly sealed by soldering on a graphite plate also made of ESw graphite. Such tubes 1 are shown in FIGS. 1 and 2 together with the closing graphite platelets 2. The surfaces to be connected were coated with a slurry of titanium silicide in a 2% polyvinyl solution in water and then heated to 1700 ° C. for about 1 hour while flushing with argon. Here, the applied titanium silicide is almost completely converted into carbide.

   Then the sealing plates were again coated on one side with a suspension of titanium silicide in a 2% polyvinyl water solution and placed on the tube 1. After a short drying period, the two superficially adhering parts were heated to 1600 C under argon and kept at this temperature for 1/2 minute. The heating time was about 1/2 minute, the cooling time from about 3 minutes. The measurement of the permeability gave an average value of 4.8 × 10-4 cm2 / sec. To determine the high-temperature strength of the connection, the tubes closed in this way were held at 800 ° C. for 500 hours under an argon purge.

   A measurement of the permeability carried out here after showed that it had not changed.


    

Claims (1)

PATENTANSPRUCH Verfahren zum Verbinden von Graphitteilen mit Tei len aus Siliziumkarbid, Quarzglas oder Graphit mit Hilfe eines Lotes aus Metallsilizid, dadurch gekennzeichnet, dass die zu verbindenden Graphitflächen vor Auftra- gung des Lotes mit einer diffusionshemmenden Schicht aus Karbiden überzogen werden. UNTERANSPRÜCHE 1. Verfahren nach Patentanspruch, dadurch gekenn zeichnet, dass Titan-, Zirkon- oder Niobsilizid als Lot verwendet wird. 2. Verfahren nach Patentanspruch, dadurch gekenn zeichnet, dass die Karbidschicht aus Karbiden des Ti tans, Zirkons, Niobs oder Siliziums einzeln oder zu mehreren gebildet wird. 3. PATENT CLAIM Process for connecting graphite parts with parts made of silicon carbide, quartz glass or graphite with the help of a solder made of metal silicide, characterized in that the graphite surfaces to be connected are coated with a diffusion-inhibiting layer of carbides before the solder is applied. SUBClaims 1. The method according to claim, characterized in that titanium, zirconium or niobium silicide is used as solder. 2. The method according to claim, characterized in that the carbide layer is formed from carbides of Ti tans, zirconium, niobium or silicon individually or in groups. 3. Verfahren nach Patentanspruch, dadurch gekenn zeichnet, dass zur Eildung der Karbidschicht auf die zu verbindenden Graphitflächen eine Silizidschicht aufge tragen wird und hierauf eine Wärmebehandlung durch geführt wird, wobei die Karbidschicht ausgebildet wird. 4. Verfahren nach Unteranspruch 3, dadurch ge kennzeichnet, dass für die Ausbildung der Karbidschicht das gleiche Silizid aufgetragen wird, das auch als Lot verwendet wird. 5. Verfahren nach Patentanspruch, dadurch gekenn zeichnet, dass die Karbidschicht in einer Dicke von 1 bis 40 11, vorzugsweise 5 bis 25 #t hergestellt wird. 6. A method according to patent claim, characterized in that, in order to form the carbide layer, a silicide layer is applied to the graphite surfaces to be connected, and a heat treatment is carried out thereupon, the carbide layer being formed. 4. The method according to dependent claim 3, characterized in that the same silicide is applied for the formation of the carbide layer that is also used as solder. 5. The method according to claim, characterized in that the carbide layer is produced in a thickness of 1 to 40 11, preferably 5 to 25 #t. 6th Verfahren nach Patentanspruch, dadurch gekenn zeichnet, dass das Metallsilizidlot pulverförmig auf die zu verbindende Stelle aufgebracht und indirekt kurz zeitig bis zum Schmelzpunkt des Silizids erhitzt wird. Method according to patent claim, characterized in that the metal silicide solder is applied in powder form to the point to be connected and indirectly heated briefly to the melting point of the silicide.
CH93166A 1965-01-25 1966-01-24 Process for connecting graphite parts with parts made of silicon carbide, quartz glass or graphite CH459041A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES95148A DE1231151B (en) 1965-01-25 1965-01-25 Method for joining graphite parts

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CH459041A true CH459041A (en) 1968-06-30

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DE (1) DE1231151B (en)
FR (1) FR1465280A (en)
GB (1) GB1109704A (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4382113A (en) 1981-03-23 1983-05-03 Energy Development Associates, Inc. Method for joining graphite to graphite
DE4116865C2 (en) * 1991-05-23 1994-08-18 Schunk Kohlenstofftechnik Gmbh Process for the production of composite bodies coated with silicon carbide and solder material
JP5735501B2 (en) * 2009-07-07 2015-06-17 モーガン・アドヴァンスト・マテリアルズ・アンド・テクノロジー・インコーポレイテッドMorgan Advanced Materials And Technology Inc. Hard non-oxide or oxide ceramic / hard non-oxide or oxide ceramic composite hybrid seal parts
CN116161985B (en) * 2023-01-12 2024-07-23 哈尔滨工业大学 Silicon carbide surface treatment method before welding and welding method of silicon carbide and high temperature alloy

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DE1231151B (en) 1966-12-22
GB1109704A (en) 1968-04-10
FR1465280A (en) 1967-01-06

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