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CA956867A - Method and apparatus for forming crystalline bodies of a semiconductor material - Google Patents

Method and apparatus for forming crystalline bodies of a semiconductor material

Info

Publication number
CA956867A
CA956867A CA120,156A CA120156A CA956867A CA 956867 A CA956867 A CA 956867A CA 120156 A CA120156 A CA 120156A CA 956867 A CA956867 A CA 956867A
Authority
CA
Canada
Prior art keywords
semiconductor material
forming crystalline
crystalline bodies
bodies
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA120,156A
Other versions
CA120156S (en
Inventor
Albert G. Fischer
Samuel Berkman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA956867A publication Critical patent/CA956867A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA120,156A 1970-12-04 1971-08-09 Method and apparatus for forming crystalline bodies of a semiconductor material Expired CA956867A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9508570A 1970-12-04 1970-12-04

Publications (1)

Publication Number Publication Date
CA956867A true CA956867A (en) 1974-10-29

Family

ID=22249442

Family Applications (1)

Application Number Title Priority Date Filing Date
CA120,156A Expired CA956867A (en) 1970-12-04 1971-08-09 Method and apparatus for forming crystalline bodies of a semiconductor material

Country Status (5)

Country Link
CA (1) CA956867A (en)
DE (1) DE2142388A1 (en)
FR (1) FR2117030A5 (en)
GB (1) GB1353917A (en)
NL (1) NL7112153A (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4083748A (en) * 1975-10-30 1978-04-11 Western Electric Company, Inc. Method of forming and growing a single crystal of a semiconductor compound
JPS5326280A (en) 1976-08-24 1978-03-10 Handotai Kenkyu Shinkokai Crystal growth for mixed crystals of compund semiconductor
JPS6117498A (en) * 1984-07-05 1986-01-25 Hitachi Cable Ltd Method for synthesizing Group 3-5 compound semiconductors
JPS6136109A (en) * 1984-07-27 1986-02-20 Hitachi Cable Ltd Method for synthesizing Group 3-5 compound semiconductors
DE3577405D1 (en) * 1984-12-28 1990-06-07 Sumitomo Electric Industries METHOD FOR PRODUCING POLYCRYSTALS FROM SEMICONDUCTOR CONNECTIONS AND DEVICE FOR CARRYING OUT THE SAME.
JPS63195187A (en) * 1987-02-06 1988-08-12 Furukawa Electric Co Ltd:The Crystal growth apparatus for compound semiconductor
EP0494312B1 (en) * 1990-07-26 1996-10-09 Sumitomo Electric Industries, Ltd. Method and apparatus for making single crystal
US5656079A (en) * 1993-02-26 1997-08-12 The United States Of America As Represented By The Air Force Statement of government interest
JP4135239B2 (en) 1997-12-26 2008-08-20 住友電気工業株式会社 Semiconductor crystal, manufacturing method thereof and manufacturing apparatus
US6572700B2 (en) 1997-12-26 2003-06-03 Sumitomo Electric Industries, Ltd. Semiconductor crystal, and method and apparatus of production thereof

Also Published As

Publication number Publication date
NL7112153A (en) 1972-06-06
GB1353917A (en) 1974-05-22
FR2117030A5 (en) 1972-07-21
DE2142388A1 (en) 1972-06-08

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