CA2229451A1 - A polysilicon resistor and a method of manufacturing it - Google Patents
A polysilicon resistor and a method of manufacturing it Download PDFInfo
- Publication number
- CA2229451A1 CA2229451A1 CA002229451A CA2229451A CA2229451A1 CA 2229451 A1 CA2229451 A1 CA 2229451A1 CA 002229451 A CA002229451 A CA 002229451A CA 2229451 A CA2229451 A CA 2229451A CA 2229451 A1 CA2229451 A1 CA 2229451A1
- Authority
- CA
- Canada
- Prior art keywords
- resistor
- dopants
- dopant
- concentration
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229920005591 polysilicon Polymers 0.000 title description 28
- 239000000463 material Substances 0.000 claims abstract description 40
- 239000002019 doping agent Substances 0.000 claims abstract description 34
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 13
- 239000011574 phosphorus Substances 0.000 claims abstract description 13
- 239000002800 charge carrier Substances 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 14
- 125000004429 atom Chemical group 0.000 description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 11
- 239000000370 acceptor Substances 0.000 description 11
- 229910052796 boron Inorganic materials 0.000 description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 10
- 238000012360 testing method Methods 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 238000002513 implantation Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000008642 heat stress Effects 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical group [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- -1 of p-type Chemical compound 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/47—Resistors having no potential barriers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Adjustable Resistors (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9503198A SE504969C2 (sv) | 1995-09-14 | 1995-09-14 | Polykiselresistor och förfarande för framställning av en sådan |
| SE9503198-5 | 1995-09-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2229451A1 true CA2229451A1 (en) | 1997-03-20 |
Family
ID=20399492
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA002229451A Abandoned CA2229451A1 (en) | 1995-09-14 | 1996-09-13 | A polysilicon resistor and a method of manufacturing it |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP0850484A1 (sv) |
| JP (1) | JPH11512565A (sv) |
| KR (1) | KR19990036386A (sv) |
| CN (1) | CN1196136A (sv) |
| AU (1) | AU7004896A (sv) |
| CA (1) | CA2229451A1 (sv) |
| SE (1) | SE504969C2 (sv) |
| WO (1) | WO1997010606A1 (sv) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE511816C3 (sv) * | 1996-06-17 | 2000-01-24 | Ericsson Telefon Ab L M | Resistor innefattande en resistorkropp av polykristallint kisel samt foerfarande foer framstaellning av en saadan |
| SE513116C2 (sv) * | 1998-11-13 | 2000-07-10 | Ericsson Telefon Ab L M | Polykiselresistor och sätt att framställa sådan |
| CN100378958C (zh) * | 2003-12-22 | 2008-04-02 | 上海贝岭股份有限公司 | 集成电路多晶硅电阻的制作方法 |
| US7285472B2 (en) * | 2005-01-27 | 2007-10-23 | International Business Machines Corporation | Low tolerance polysilicon resistor for low temperature silicide processing |
| US7691717B2 (en) | 2006-07-19 | 2010-04-06 | International Business Machines Corporation | Polysilicon containing resistor with enhanced sheet resistance precision and method for fabrication thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60109260A (ja) * | 1983-11-15 | 1985-06-14 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 補償された多結晶シリコン抵抗素子 |
-
1995
- 1995-09-14 SE SE9503198A patent/SE504969C2/sv not_active IP Right Cessation
-
1996
- 1996-09-13 AU AU70048/96A patent/AU7004896A/en not_active Abandoned
- 1996-09-13 KR KR1019980701055A patent/KR19990036386A/ko not_active Ceased
- 1996-09-13 CN CN96196923A patent/CN1196136A/zh active Pending
- 1996-09-13 JP JP9511899A patent/JPH11512565A/ja active Pending
- 1996-09-13 CA CA002229451A patent/CA2229451A1/en not_active Abandoned
- 1996-09-13 EP EP96931342A patent/EP0850484A1/en not_active Withdrawn
- 1996-09-13 WO PCT/SE1996/001148 patent/WO1997010606A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| SE9503198D0 (sv) | 1995-09-14 |
| AU7004896A (en) | 1997-04-01 |
| JPH11512565A (ja) | 1999-10-26 |
| WO1997010606A1 (en) | 1997-03-20 |
| SE9503198L (sv) | 1997-03-15 |
| CN1196136A (zh) | 1998-10-14 |
| SE504969C2 (sv) | 1997-06-02 |
| EP0850484A1 (en) | 1998-07-01 |
| KR19990036386A (ko) | 1999-05-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FZDE | Discontinued |