CA1295774C - Auto-photocrosslinkable copolyimides and polyimide compositions - Google Patents
Auto-photocrosslinkable copolyimides and polyimide compositionsInfo
- Publication number
- CA1295774C CA1295774C CA000585713A CA585713A CA1295774C CA 1295774 C CA1295774 C CA 1295774C CA 000585713 A CA000585713 A CA 000585713A CA 585713 A CA585713 A CA 585713A CA 1295774 C CA1295774 C CA 1295774C
- Authority
- CA
- Canada
- Prior art keywords
- radicals
- formula
- mol
- radical
- ortho
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004642 Polyimide Substances 0.000 title claims abstract description 60
- 229920001721 polyimide Polymers 0.000 title claims abstract description 60
- 239000000203 mixture Substances 0.000 title claims abstract description 51
- -1 cycloaliphatic Chemical group 0.000 claims abstract description 66
- 125000004433 nitrogen atom Chemical group N* 0.000 claims abstract description 29
- 125000001931 aliphatic group Chemical group 0.000 claims abstract description 20
- 239000002253 acid Substances 0.000 claims abstract description 16
- 150000000000 tetracarboxylic acids Chemical group 0.000 claims abstract description 14
- 239000011248 coating agent Substances 0.000 claims abstract description 12
- 238000000576 coating method Methods 0.000 claims abstract description 12
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 9
- 125000003118 aryl group Chemical group 0.000 claims abstract description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 5
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract 4
- 239000000306 component Substances 0.000 claims description 66
- 229920000642 polymer Polymers 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 15
- 150000004985 diamines Chemical class 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 230000005855 radiation Effects 0.000 claims description 11
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims description 10
- 239000004215 Carbon black (E152) Substances 0.000 claims description 10
- 229930195733 hydrocarbon Natural products 0.000 claims description 10
- 150000004984 aromatic diamines Chemical class 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 5
- 125000002947 alkylene group Chemical group 0.000 claims description 4
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 claims description 3
- 239000012876 carrier material Substances 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 229920000136 polysorbate Polymers 0.000 claims 1
- 150000003254 radicals Chemical class 0.000 description 67
- 239000010410 layer Substances 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 11
- 239000000758 substrate Substances 0.000 description 9
- 238000006068 polycondensation reaction Methods 0.000 description 8
- BGTOWKSIORTVQH-UHFFFAOYSA-N cyclopentanone Chemical compound O=C1CCCC1 BGTOWKSIORTVQH-UHFFFAOYSA-N 0.000 description 6
- 231100000489 sensitizer Toxicity 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 5
- 206010034972 Photosensitivity reaction Diseases 0.000 description 5
- 150000002430 hydrocarbons Chemical group 0.000 description 5
- 230000036211 photosensitivity Effects 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 125000001424 substituent group Chemical group 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 description 3
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 3
- 239000002318 adhesion promoter Substances 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 230000009477 glass transition Effects 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 2
- QPFMBZIOSGYJDE-UHFFFAOYSA-N 1,1,2,2-tetrachloroethane Chemical compound ClC(Cl)C(Cl)Cl QPFMBZIOSGYJDE-UHFFFAOYSA-N 0.000 description 2
- RFFLAFLAYFXFSW-UHFFFAOYSA-N 1,2-dichlorobenzene Chemical compound ClC1=CC=CC=C1Cl RFFLAFLAYFXFSW-UHFFFAOYSA-N 0.000 description 2
- WCZNKVPCIFMXEQ-UHFFFAOYSA-N 2,3,5,6-tetramethylbenzene-1,4-diamine Chemical compound CC1=C(C)C(N)=C(C)C(C)=C1N WCZNKVPCIFMXEQ-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- DLFVBJFMPXGRIB-UHFFFAOYSA-N Acetamide Chemical compound CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- ZHNUHDYFZUAESO-UHFFFAOYSA-N Formamide Chemical compound NC=O ZHNUHDYFZUAESO-UHFFFAOYSA-N 0.000 description 2
- ATHHXGZTWNVVOU-UHFFFAOYSA-N N-methylformamide Chemical compound CNC=O ATHHXGZTWNVVOU-UHFFFAOYSA-N 0.000 description 2
- 229920001774 Perfluoroether Polymers 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 125000006159 dianhydride group Chemical group 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- MTZQAGJQAFMTAQ-UHFFFAOYSA-N ethyl benzoate Chemical compound CCOC(=O)C1=CC=CC=C1 MTZQAGJQAFMTAQ-UHFFFAOYSA-N 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- LQNUZADURLCDLV-UHFFFAOYSA-N nitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1 LQNUZADURLCDLV-UHFFFAOYSA-N 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000011085 pressure filtration Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 description 2
- 125000004434 sulfur atom Chemical group 0.000 description 2
- 125000004178 (C1-C4) alkyl group Chemical group 0.000 description 1
- AVQQQNCBBIEMEU-UHFFFAOYSA-N 1,1,3,3-tetramethylurea Chemical compound CN(C)C(=O)N(C)C AVQQQNCBBIEMEU-UHFFFAOYSA-N 0.000 description 1
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 125000001140 1,4-phenylene group Chemical group [H]C1=C([H])C([*:2])=C([H])C([H])=C1[*:1] 0.000 description 1
- NIOYEYDJTAEDFH-UHFFFAOYSA-N 1-(2-hydroxyethoxy)-2-methylpropan-2-ol Chemical compound CC(C)(O)COCCO NIOYEYDJTAEDFH-UHFFFAOYSA-N 0.000 description 1
- LIRNFNXOTBZTPP-UHFFFAOYSA-N 1-[2-(2-hydroxyethoxy)ethoxy]-2-methylpropan-2-ol Chemical compound CC(C)(O)COCCOCCO LIRNFNXOTBZTPP-UHFFFAOYSA-N 0.000 description 1
- YLHUPYSUKYAIBW-UHFFFAOYSA-N 1-acetylpyrrolidin-2-one Chemical compound CC(=O)N1CCCC1=O YLHUPYSUKYAIBW-UHFFFAOYSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- MBDUIEKYVPVZJH-UHFFFAOYSA-N 1-ethylsulfonylethane Chemical compound CCS(=O)(=O)CC MBDUIEKYVPVZJH-UHFFFAOYSA-N 0.000 description 1
- ULKFLOVGORAZDI-UHFFFAOYSA-N 3,3-dimethyloxetan-2-one Chemical compound CC1(C)COC1=O ULKFLOVGORAZDI-UHFFFAOYSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- OZJPLYNZGCXSJM-UHFFFAOYSA-N 5-valerolactone Chemical compound O=C1CCCCO1 OZJPLYNZGCXSJM-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- IAZDPXIOMUYVGZ-WFGJKAKNSA-N Dimethyl sulfoxide Chemical compound [2H]C([2H])([2H])S(=O)C([2H])([2H])[2H] IAZDPXIOMUYVGZ-WFGJKAKNSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RJUFJBKOKNCXHH-UHFFFAOYSA-N Methyl propionate Chemical compound CCC(=O)OC RJUFJBKOKNCXHH-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 1
- ZWXPDGCFMMFNRW-UHFFFAOYSA-N N-methylcaprolactam Chemical compound CN1CCCCCC1=O ZWXPDGCFMMFNRW-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 206010037660 Pyrexia Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- WVCXSPJPERKPJS-UHFFFAOYSA-L azane;dichloropalladium;hydrate Chemical group N.N.N.N.O.Cl[Pd]Cl WVCXSPJPERKPJS-UHFFFAOYSA-L 0.000 description 1
- 229920005601 base polymer Polymers 0.000 description 1
- 150000001555 benzenes Chemical class 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- OWBTYPJTUOEWEK-UHFFFAOYSA-N butane-2,3-diol Chemical compound CC(O)C(C)O OWBTYPJTUOEWEK-UHFFFAOYSA-N 0.000 description 1
- 150000001244 carboxylic acid anhydrides Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 150000001733 carboxylic acid esters Chemical class 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 150000001896 cresols Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 238000007766 curtain coating Methods 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 229960001760 dimethyl sulfoxide Drugs 0.000 description 1
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N dimethyl sulfoxide Natural products CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 1
- BTVWZWFKMIUSGS-UHFFFAOYSA-N dimethylethyleneglycol Natural products CC(C)(O)CO BTVWZWFKMIUSGS-UHFFFAOYSA-N 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Natural products C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004870 electrical engineering Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000003951 lactams Chemical class 0.000 description 1
- 150000002596 lactones Chemical class 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004611 light stabiliser Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000006224 matting agent Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229940017219 methyl propionate Drugs 0.000 description 1
- AJFDBNQQDYLMJN-UHFFFAOYSA-N n,n-diethylacetamide Chemical compound CCN(CC)C(C)=O AJFDBNQQDYLMJN-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000001280 n-hexyl group Chemical group C(CCCCC)* 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000003880 polar aprotic solvent Substances 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007363 ring formation reaction Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 125000005373 siloxane group Chemical group [SiH2](O*)* 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
- FCFMKFHUNDYKEG-UHFFFAOYSA-N thietane 1,1-dioxide Chemical compound O=S1(=O)CCC1 FCFMKFHUNDYKEG-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 125000006839 xylylene group Chemical group 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0387—Polyamides or polyimides
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1085—Polyimides with diamino moieties or tetracarboxylic segments containing heterocyclic moieties
-
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- C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
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Abstract
Auto-photocrosslinkable copolyimides and polyimide compositions Abstract The present invention relates to copolyimides of 100-70 mol % of recurring structural units of the formula I and 0-30 mol % of recurring structural units of the formula II
(I), (II), in which Za is a tetravalent aromatic tetracarboxylic acid radical other than that of thioxanthonetetracarboxylic acid, the carboxyl groups thereof in each case being located in pairs in the ortho-position or peri-position relative to one another, and Xa is a divalent aromatic diamine radical which, in at least one ortho-position relative to at least one nitrogen atom, carries a hydrocarbon substituent having at least one aliphatic .alpha.-hydrogen atom or Xa is a radical of the formula III
(III), in which Xc is a divalent aromatic diamine radical which, in ortho-position relative to both nitrogen atoms, carries in each case at least one mono-valent hydrocarbon substituent having at least one aliphatic .alpha.-hydrogen atom, ? assumes an average value of 1.0 to 2.5, Zb is as defined for Za and Xb is an aliphatic, cycloaliphatic, aromatic or araliphatic diamine radical, excluding a radical of the formula III, with the proviso that the proportion of radicals of the formula III in the formula I is selected such that the quantity of thioxanthonetetracarboxylic acid radicals, relative to the total quantity of tetracarboxylic acid units in the copolyimide, is between 1 and 30 mol %.
These copolyimides have a high radiation-sensitivity and can be combined with structurally related polyimides to form photocrosslinkable compo-sitions which can be employed for coating purposes.
(I), (II), in which Za is a tetravalent aromatic tetracarboxylic acid radical other than that of thioxanthonetetracarboxylic acid, the carboxyl groups thereof in each case being located in pairs in the ortho-position or peri-position relative to one another, and Xa is a divalent aromatic diamine radical which, in at least one ortho-position relative to at least one nitrogen atom, carries a hydrocarbon substituent having at least one aliphatic .alpha.-hydrogen atom or Xa is a radical of the formula III
(III), in which Xc is a divalent aromatic diamine radical which, in ortho-position relative to both nitrogen atoms, carries in each case at least one mono-valent hydrocarbon substituent having at least one aliphatic .alpha.-hydrogen atom, ? assumes an average value of 1.0 to 2.5, Zb is as defined for Za and Xb is an aliphatic, cycloaliphatic, aromatic or araliphatic diamine radical, excluding a radical of the formula III, with the proviso that the proportion of radicals of the formula III in the formula I is selected such that the quantity of thioxanthonetetracarboxylic acid radicals, relative to the total quantity of tetracarboxylic acid units in the copolyimide, is between 1 and 30 mol %.
These copolyimides have a high radiation-sensitivity and can be combined with structurally related polyimides to form photocrosslinkable compo-sitions which can be employed for coating purposes.
Description
- 1 - K-16806/~
Auto-photocrosslinkable copolyimides and polyimide compositions The present invention relates to novel copolyimides, compositions contain-ing these compounds and at least one further polyimide, to a process for producing protective layers or images, and to the use of said compounds or mixtures as photocrosslinkable components in the production of electronic components.
Soluble and at the same time photo-structurable polyimides have been dis-closed by EP-A-132,221, -134,752, -162,017 and -181,837.
EP-A-92,524 and -141,781, have disclosed radiation-sensitive coating agents which contain a soluble polyimide and at least one crosslinking agent, for example an organic chromophoric polyazide.
Photo-structurable polyimides are of potential interest as protective layers or interlayers in the production of electronic components. Layers of these materials have a high temperature resistance and are chemically inert, so that they can be used even in process steps where high tempera-tures and aggressive chemical conditions apply.
Prior auto-photocrosslinkable polyimides contain, in addition to a sensi-tizer unit incorporated in the polymer chain, for example a radical of benzophenonetetracarboxylic acid or thioxanthonetetracarboxylic acid, diamine radicals having aliphatically bound hydrogen in the ~-position or o-position relative to the nitrogen atom, for example o,o-dialkyl-substituted aromatic diamine radicals. As a rule, the photosensitivity increases with the content of incorporated sensitizer. At the desired high photosensitivities, reliance had thus hitherto to be placed on the highest possible sensitizer concentrations, so that the possible variations of other polymer properties, such as thermal stability, glass transition temperature, solubility or water absorption resistance, were restricted.
Likewise, variation of the optical properties of these photo systems, such as light absorption and spectral sensitivity, was only possible to a small extent.
Auto-photocrosslinkable copolyimides and polyimide compositions The present invention relates to novel copolyimides, compositions contain-ing these compounds and at least one further polyimide, to a process for producing protective layers or images, and to the use of said compounds or mixtures as photocrosslinkable components in the production of electronic components.
Soluble and at the same time photo-structurable polyimides have been dis-closed by EP-A-132,221, -134,752, -162,017 and -181,837.
EP-A-92,524 and -141,781, have disclosed radiation-sensitive coating agents which contain a soluble polyimide and at least one crosslinking agent, for example an organic chromophoric polyazide.
Photo-structurable polyimides are of potential interest as protective layers or interlayers in the production of electronic components. Layers of these materials have a high temperature resistance and are chemically inert, so that they can be used even in process steps where high tempera-tures and aggressive chemical conditions apply.
Prior auto-photocrosslinkable polyimides contain, in addition to a sensi-tizer unit incorporated in the polymer chain, for example a radical of benzophenonetetracarboxylic acid or thioxanthonetetracarboxylic acid, diamine radicals having aliphatically bound hydrogen in the ~-position or o-position relative to the nitrogen atom, for example o,o-dialkyl-substituted aromatic diamine radicals. As a rule, the photosensitivity increases with the content of incorporated sensitizer. At the desired high photosensitivities, reliance had thus hitherto to be placed on the highest possible sensitizer concentrations, so that the possible variations of other polymer properties, such as thermal stability, glass transition temperature, solubility or water absorption resistance, were restricted.
Likewise, variation of the optical properties of these photo systems, such as light absorption and spectral sensitivity, was only possible to a small extent.
- 2 ~
It has now been found that small proportions of thioxanthonetetracarboxylic acid radicals lead, surprisingly, to polyimides of high photosensitivity.
This is also of interest for economic reasons, since such systems contain only small proportions of thioxanthonetetracarboxylic acid which is expen-sive to prepare.
By means of incorporating small quantities of the sensitizer into an inherently non-photoactive material, highly active compounds can thus be prepared without substantially changing the physico-chemical properties of the base polymer.
Moreover, these copolymers can be combined with structurally related, but not necessarily photoactive polyimides to give photoactive materials. The possibilities of variation of highly photosensitive polyimides with respect to material properties, such as thermal stability, glass transition temp-erature, water absorption, modulus of elasticity, elongation at break and coefficient of thermal expansion, are thus greatly widened. The systems can also be varied in their optical and photochemical behaviour. Thus, Eor example, the optical absorption can be precisely adjusted to given layer thicknesses and substrates.
The present invention relates to copolyimides comprising 100-70 mol ~ of recurring structural units of the Eormula I and 0-30 mol ~ of recurring structural units of the formula II
/ _ ~ \z V ~ -X~ b ~ -X~- (II) in which za is a tetravalent aromatic tetracarboxylic acid radical other than that of thioxanthonetetracarboxylic acid, the carboxyl groups thereof in each case being located in pairs in the ortho-position or peri-position relative to one another, and xa is a divalent aromatic diamine radical which, in at least one ortho-position relative to at least one nitrogen atom, carries a hyclrocarbon substituent having at least one aliphatic ~-hydrogen atom or Xa is a radical of the formula III
~2~77~
in which xC is a divalent aromatic diamine radical which, in ortho-position relative to the two nitrogen atoms, carries in each ease at least one monovalent hydrocarbon substituent having at least one aliphatic ~-hydrogen atom, and n assumes an average value of 1.0 to 2.5, zb is as defined for za and Xb is an aliphatie, cyeloaliphatic, aro-matic or araliphatic diamine radical, excluding a radical of the formula III, with the proviso that the proportion of radicals of the formula III
in the formula I is selected such that the quantity of thioxanthone-tetraearboxylie acid radieals, relative to the total quantity of tetra-earboxylic aeid units in the copolyimide, is between 1 and 30 mol %.
za and zb can be mononuclear or polynuclear, preferably mononuelear or dinuclear, carbocyclic-aromatic or heterocyclic-aromatic radicals, with the exception of thioxanthone radicals. Polynuclear radicals ean be fused or, preferably, be linked to one another via a bridge member.
Examples of suitable radieals za and zb are to be found in EP-A-181,837, the deseription of which is also the subjeet of the present deseription.
Preferred radicals za and zb are of the formulae IV to IX
1l (IV), I il I (V), I 1l_ (VI), R~ (IX), in which the free bonds are in each case located in pairs in the ortho-position relative to one another, Rl is a group of the formulae -CO-, -CH2-, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -SO2-, -NR2-, -SiR3R4-, -SiR R -O~
Si~3R4- and -o-R5-SiR3R4-o-SiR3R4-R5-o-, R2 is hydroyen or Cl-C6alkyl, R3 and R4 independently of one another are Cl-C6alkyl, Cl-C6perfluoroalkyl, Cl-C6alkoxy or Cl-C6-perfluoroalkoxy and R5 is alkylene, preferably C2-C4alkylene. Preferably, Rl is -CO- or -C(CF3)2-.
Further preferred radicals za and zb are of the formula X and XI
Polyimides containing radicals of this type are known from EP-A-162,017.
Further preferred radicals za and zb are of the formula XII to XIV.
~ (XIV).
Polyimides containing radicals of this type are known from EP-A-181,837.
The aromatic diamine radical Xa must carry certain substituents and must have a certain substitution pattern.
Thus, in the diamine radical Xa other than that of the formula III, at least one ortho-position relative to a nitrogen atom must be substituted.
However several or all four ortho-positions relative to the nitrogen atoms or possible further positions in the aromatic nucleus can also be sub-stituted.
77~
The ortho-substituent can be a monovalent hydrocarbon radical having atleast one aliphatic ~-hydrogen atom or it can be a divalent hydrocarbon radical which has at least one ~-hydrogen atom and, together with the aromatic nucleus, forms a condensed system, for example an alkylene chain.
Further substituents in the ortho-position or in a non-ortho-position can also be of a different nature, for example halogen atoms, such as chlorine.
Examples of hydrocarbon substituents having at least one aliphatic ~
hydrogen atom are alkyl which may be interrupted in the chain by oxygen atoms or sulfur atoms, cycloalkyl, aralkyl or, in the case of divalent substituents, also alkylene.
Preferred monovalent hydrocarbon substituents are Cl-C6alkyl, cyclo-hexyl or benzyl, very particularly preferred are C1-C4alkyl and espe-cially methyl and ethyl.
Examples of suitable radicals Xa are to be found in EP-A-181,837. The diamine radical Xa other than that of the formula III is, particularly preferably, as defined for the diamine radical xC in formula III.
xc is likewise a specifically substituted aromatic diamine radical. The substituents are monovalent hydrocarbon radicals which have at least one aliphatic ~-hydrogen atom. ~owever, both nitrogen atoms must have at least one ortho-substituent. These can be radicals xC which are sub-stituted asymmetrically relative to the ortho-substituents or preferably symmetrically substituted radicals XC. EXamples of suitable radicals xC
are to be found in EP-A-181,837.
The aromatic diamine radicals, on which Xa and xC are based, are in general substituted carbocyclic-aromatic radicals having nuclei of 6 to 22 C atoms. These radicals can be mononuclear or represent polynuclear aromatic systems which are fused or mutually linked via bridge groups.
Preferably, they are substituted phenylene radicals or two substituted 1,3- or 1,4-phenylene radicals which are linked via a direct bond or via a bridge group Rl as defined above for radicals of the formula IX.
~.~g~77~
The structural elements of the formula II are, as appropriate, co-condensed in quantities of up to 30 mol ~, preferably up to 20 mol ~, relative to the total polymer, into the copolyimide according to the invention, in order to modify properties of the polymer, for example adhesive strength or polarity.
Examples of the diamine component Xb in formula II are to be found in EP-A-181,837.
Examples of aliphatic radicals Xb are C2-C20alkylene radicals which may be interrupted in the chain by oxygen atoms or sulfur atoms such as ethylene, tri-, tetra-, penta-, hexa-, hepta-, octa-, nona-, deca-, dodeca-, tetra-deca-, hexadeca-, octadeca- or eicosamethylene or di-, tri- or tetra-toxaethylene), -(oxapropylene) or -(oxabutylene).
Aliphatic radicals Xb within the scope of this description are also to be understood as meaning siloxane radicals having aliphatic substituents or siloxane-modified aliphatic radicals.
Amongst the aliphatic radicals Xb, radicals containing siloxane groups should be mentioned especially. Examples of these groups are to be found in EP-A-132,221 or in EP-A-54,426.
Examples of cycloaliphatic radicals Xb are 1,2-, 1,3- or 1,4-cyclo-pentylene or -cyclohexylene.
Examples of aromatic diamine radicals Xb are arylene radicals having 6 to 22 C atoms. These radicals can be mononuclear or can be polynuclear aromatic systems which are fused or mutually linked via bridge groups.
Preferably they are phenylene radicals, such as 1,3- or 1,4-phenylene, or 1,3- or 1,4-phenylene radicals which are linked via a direct bond or a bridge group -Rl- as defined above for radicals of the formula IX, such as 4,4'-diphenylmethane, 4,4'-diphenyl ether or 4,4'-diphenyl sulfone.
They can also be substituted aromatic radicals, for example the groups defined for Xa (with the exception of radicals of the formula III) or XC.
~2~,~77~
An example oE an araliphatic radical Xb is xylylene.
In any C1-C6alkyl, C1-C6alkoxy, C1-C6perfluoroalkyl or C1-C6perfluoro-alkoxy radicals, the alkyl radicals or perfluoroalkyl radicals can be straight-chain or branched.
Examples of such radicals are methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, n-pentyl, n-hexyl and the corresponding perfluoro-alkyl, alkoxy or perfluoroalkoxy groups.
The straight-chain radicals are preferred.
In the thioxanthone radical of the formula III, the carbonyl groups forming the imide system are in each case located in pairs in the ortho-position relative to one another. Those radicals of the formula III are preferred in which the carbonyl groups are in the 3,3',4,4'-position.
~he index n is preferably an average value (number average) from 1.0 to 1.8, and very particularly from 1.0 to l.5. The proportion of the thio-xanthone radicals, relative to the total quantity of the tetracarboxylic acid units in the copolyimide, is preferably 2.0 to 20 mol ~, particularly preferably 3.0 to 15 mol ~, and very particularly preferably 5.0 to 15 mol ~.
Those copolyimides having the recurring structural units of the formula I
and, if appropriate, of the formula II as defined above are preferred in which za and zb are radicals of the formulae IV and/or IX.
Those copolyimides having the recurring structural units of the formual I
and, if appropriate, of the formula II are very particularly preferred in which za and zb are radicals of the formulae IV and/or IX and Rl is -CO-, -O-, -C~-, -C(C~3)2- and especially -C(CF3)2-.
Those copolyimides consisting of the recurring structural units of the formula I and, if appropriate, the formula II are also preferred in which the proportion of thioxanthone radicals, relative to the total quantity of 7~
tetracarboxylic acid units in the copolyimide, is 5.0 to 15 mol %.
Those copolyimides consisting of recurring st}uctural units of the formula I and, if appropriate, of the formula II are very particularly preferred in which n assumes an average value of 1.0 to 1.5.
Those copolyimides consisting of recurring structural units of the formula I and, if appropriate, of the formula II are also particularly preferred in which all the radicals xa other than those of the formula III are divalent radicals of an aromatic diamine which carries in the ortho-position, preferably in both ortho-positions, relative to the two nitrogen atoms in each case at least one monovalent hydrocarbon radical having ali-phatic a-hydrogen atoms, preferably a Cl-C6alkyl radical, and in which the radicals xC in formula III are derived from aromatic diamines in which both ortho-positions of both nitrogen atoms each carry monovalent hydrocarbon radicals having aliphatic a-hydrogen atoms, preferably Cl-C6-alkyl radicals, and in which Xb, if present, is in particular a siloxane modified alkylene radical.
Those copolyimides consisting of recurring structural units of the formula I and, if appropriate of the formula II are very particularly preferred in which all the radicals xa, Xb and xC have the same definition.
Particularly preferred diamine radicals in these preferred embodiments are the groups of the formulae XV to XVIII
CH3\ ~!~ /CH3 CH3\ ~!, /CH3 ¦ 1~ ( xY),t il (XVI), CH3 ~j CH3 CH3 ~- \
ICH 3 ~ ~R~
T li (XVII),\ /-~Z~-\ /-~(XVIII), C 2 H s ~ T C2Hs '=- \R7 ~z~
in which Z is a direct bond or -O-, -CH2- or -C(CF3)2- and R6 and R7 independently of one another are Cl-C6alkyl, especially methyl or ethyl.
Radicals of the formula XVIII, in which Z is -C~2- or -C(CF3)2- and R6 and R7 are methyl or ethyl`, are very particularly preferred.
Those copolyimides consisting of recurring structural units of the formula I are very particularly preferred in which all the radicals xC and the radicals xa other than those of the formula III are derived from aromatic diamines in which both ortho-positions of both nitrogen atoms in each case carry monovalent hydrocarbon radicals having aliphatic -hydrogen atoms, especially Cl--C6alkyl groups, and with very particular preference are groups of the formulae XV to XVIII.
The copolyimides according to the invention have average molecular weights (weight average Mw) of at least 5,000, preferably at least 10,000. The upper limit depends essentially on properties which determine the process-ability, for example their solubility. The limit can be up to 500,000, preferably 100,000 and especially up to 60,000. Moreover, these can be random copolyimides or block copolyimides. They are prepared by conven-tional processes in equipment provided for this purpose.
The copolyimides according to the invention are advantageously prepared by polycondensation of the corresponding tetracarboxylic acids with the corresponding diamines. In place of the tetracarboxylic acids, their polyimide-forming derivatives, for example their dianhydrides, carboxylic acid chlorides, tetraalkyl esters or alkyl half-esters can also be used.
Depending on the nature of the diamine radicals xa, Xb and XC, the polycondensation can be carried out in different ways.
If xa, Xb and xC are each aromatic diamine radicals which carry at least one hydrocarbon substituent having aliphatic -hydrogen atoms in each ortho-position relative to both nitrogen atoms, the polycondensation can be carried out by directly reacting the tetracarboxylic acids of the formulae XIX, XX and, if appropriate, XXI or their polyimide-forming derivatives, preferably the dianhydrides, with substantially equivalent ~Z~7~
quantities of one or more diamines of the ~ormulae XXII, XXIII, and, if appropriate, XXIV in a manner known per se HOOC COOH HOOC~ . /COOH
\za/ (XIX), i 1I T 11 (xx), HOOC \COOH Hooc~- S ~ COOH
HOOC COOH H2N-Xd-NHz (XXII), H2N-X -NHz (XXIII), \zb/ (XXI).
HOOC/ \COOH H2~-Xe-NH2 (XXIV), in which za, zb and xC are as defined above and Xd and Xe can assume one of the meanings defined for xC (process a). The starting compounds of the formulae XIX to XXIV are known per se and are described, for example, in the abovementioned patent applications relating to auto-photocrosslinkable polyimides. ..
In this embodiment, the proportion of thioxanthonetetracarboxylic acid is between 1 and 30 mol ~, relative to the quantity of the radicals XIX to XXI.
A further preparation process (process b) is suitable for synthesizing the copolyimides obtainable according to process a or of the other copolyimidec according to the invention having diamine radicals Xa other than those of the formula III, which do not carry a hydrocarbon substituent having at least one aliphatic ~-hydrogen atom in each of the ortho-positions relative to both nitrogen atoms, for example with ortho-monosubstituted aromatic diamine radicals Xa or Xb, or with non-aromatic diamine radicals Xb.
In process b, the polycondensation is carried out in two stages. Initially, a precondensate of the formula XXV is prepared and, if desired, separated into its components which are isolated . CR .~RC . ¦' ~xxv~, ~ H N ~ X ~ X NH
by polycondensating a compound of the formula XX or one of its polyimide-forming derivatives with an excess of a diamine of the formula XXIII in a manner known per se. In this case, the molar ratio of the two components is to be selected such that an average value n of between 1.0 and 2.5 results. These selection criteria are known per se to a person skilled in the art of polycondensation processes.
Advantageously, a molar ratio of tetracarboxylic acid (derivative) to diamine of 1:1.5 to 1:20, preferably from 1:2 to 1:10, is selected. The precondensate of the formula XXV is then polycondensed in a second stage with the remaining tetracarboxylic acid components and, if appropriate, diamine components of the formulae XIX, XXI, XXVI and XXVII in a manner known per se H2N-Xf-NH2 (XXVI) and H2N-Xb-NH2 (XXVII);
in this case, xf has one of the meanings defined for xa with the excep-tion of the formula III and Xb is as defined above.
~he quantitative ratios of the components of the formulae XIX and, if appropriate, XXI, XXVI and XXVII in this second stage are advantageously selected such that a virtually equivalent total quantity of the diamines corresponds to the total quantity of the tetracarboxylic acid (derivatives).
The quantity of diamine XXV is selected such that the thioxanthone radical content in the copolymer corresponds to the quantity defined above. The starting compounds of the formula XXVI and XXVII are likewise known and are described, for example, in the abovementioned patent applications relating to auto-photocrosslinkable polyimides.
The polycondensations are preferably carried out in solution. ~he solvents used are polar organic solvents which are inert to the reactants. Examples of these are listed below.
~he polycondensations proceed, depending on the reaction temperature, initially up to the polyamide acid intermediate which is then cyclized with elimination of water. The cyclization can take place thermally or it is ~57~
carried out advantageously under the action of dehydrating agents such as carboxylic acid anhydrides, for example acetic anhydride, or tertiary amines such as triethylamine.
The reaction temperatures are known per se to a person skilled in the art of polycondensations. Preferred reaction temperatures are between -10C
and +20C.
The copolyimides A) according to the invention can be combined with struc-turally related, but not necessarily photoactive polyimides B) to give photoactive materials of high radiation sensitivity.
In the case that component B) is a polyimide with a large proportion of benzophenonetetracarboxylic acid radicals, highly radiation-sensitive combinations can also be prepared using a modified component A') which contains a thioxanthonetetracarboxylic acid radical proportion of 20 - 100 mol %, relative to the total number of tetracarboxylic acid units in component A').
In all these cases, the selection criterion is the total quantity of thio-xanthonecarboxylic acid radicals in the mixture, which amounts to 1.0 to 30 mol % relative to all the tetracarboxylic acid radicals in the polyimide mixture. Moreover, the nature of the tetracarboxylic acid components and diamine components in both polyimide components must be such that miscibil-ity of both components in one another is guaranteed.
The invention also relates to compositions essentially containing, as the polyimide components A) a copolyimide or a mixture of copolyimides consisting of 100-70 mol %, in particular 100-80 mol %, of recurring structural units of the formula I
and 0-30 mol ~, in particular 0-20 mol ~, of recurring structural units of the formula II as defined above, the total quantity of thioxanthone radi-cals in component A), relative to the total quantity of all tetracarboxy-lic acid radicals in this component, being 2.0 to ~0 mol 3, or A') a polyimide or a mixture of polyimides consisting of 100-20 mol % of recurring structural units of the formula XXVIII, 0-80 mol ~ of recurring ~S774 structural units of the formula XXIX and 0-30 mol %, in particular 0-20 mol %, of recurring structural units of the formula XXX
\~/\S/~
~ ll ? N-Xh- (XXIX~ \ /Z ~ -X - (XXX~, in which zc can assume one of the meanings defined for za and Xg, Xh and xi independently of one another can assume one of the meanings defined for XC, and B) a polyimide or a mixture of polyimides consisting of 100-~0 mol % of recurring structural units of the formula XXXI and of 0-20 mol % of re-curring structural units of the formula XXXII
- ~\ /Z \ ~ -XI- (XXXI), ~ e/ ~ _Xk_ (xXXII)~
in which zd and ze independently of one another can assume one of the meanings defined for za, Xi can assume one of the meanings defined for xa with the exception of the formula III and Xk can assume one of the meanings defined for Xb, it being necessary in the case of the A)/B) mixtures that at least 70 mol % of the radicals zd and, if appropriate, ze in component B), relative to the total quantity of these radicals, are identical to the radicals za and, if appropriate, zb in component A) and at least 70 mol ~ of the radicals xi and, if appropriate, Xk in component B), relative to the total quantity of these radicals are identi-cal to the radicals Xa other than those of the formula III and, if appropriate, to the radicals Xb in component A), or it being necessary that at least 40 mol ~, preferably at least 45 mol %, of the radicals X
and, if appropriate, Xk in component B), relative to the total quantity 5~74 of these radicals, are identical to the radicals Xg and, if appropriate, xh and xi in component A'), with the proviso that the combination A')/B) is possible in the case where 80-100 mol 3 of the tetracarboxylic acid radi-cals of component B) are derived from ben~ophenonetetracarboxylic acid and that the combinations A)/B) are possible in all other cases, and that in all combinations A j/B) and A')/B) the quantity of the com-ponents A) or A') is selected such that the quantity of thioxanthone-tetracarboxylic acid radicals, relative to the total quantity of the tetra~
carboxylic acid radicals in the polyimide mixture, is between 1.0 and 30 mol %, in particular, between 1.0 and 20 mol %.
The thioxanthone radical content in the polyimide o~ component A) deviates slightly from the above definition of the polyimides according to the invention, since the total thioxanthonetetracarboxylic acid radical content is reduced by the dilution with component B). The polyimides of component A) can be obtained analogously to the processes described above by using the corresponding quantities of the starting compounds XIX to XXVII.
The polyimides of components A') are generally known from EP-A-181,837.
:
The polyimides of component B) are known per se from EP-A-132,221 and -134,752.
The tetracarboxylic acid radicals zc, zd and ze are preferably as defined above for prefe}red radicals za.
With particular preference, these radicals o~ the formula IV and IX, especially radicals of the formula IX, in which Rl is -CO-, -O-, -CH2-or -C(CF3)2 The diamine radicals Xg, Xh and~Xi preferably assume one of the pre-ferred meanings deflned above for XC. : :~
The diamine radical Xj preferably assumes one of the preferred meaningsdefined above for xa.
.
3l2~
The diamine radical Xk preferably assumes one of the preferred meaningsdefined above for Xb.
With very particular preference, Xg, Xh, Xi, Xj and Xk are radicals of the formulae XV to XVIII.
Preferred polyimide compositions of A) and B) or of A') and B) contain a total quantity of thioxanthonetetracarboxylic acid radicals oE between 1.0 and 15 mol %, and very particularly between 3.0 and 15 mol %, relative to the total quantity of all tetracarboxylic acid radicals in the polyimide mixture.
Those compositions containing components A) and B) are particularly pre-ferred in which, in component A), the radicals Xa other than those of the formula III and the radicals xC are substituted by C1-C6alkyl in each of the two ortho-positions relative to both nitrogen atoms, the carbonyl groups in the radical of the formula III are in the 3,3',4,4'-position, n is an averàge value from 1.0 to 1.5 and za and, if appropriate, zb are radicals of the formula IV or IX as defined above, especially radicals of the formula IX, in which Rl is -CO-, -O- or -C(CF3)2-, and in which, in component Bl, zd and, if appropriate, ze are radicals of the formula IV or IV as defined above, in particular radicals of the formula IX, in which is -O- or -C(CF3)2-, Xi is a divalent aromatic diamine radical which is substituted by Cl-C6alkyl in at least one ortho-position, preferably in both ortho-positions, relative to both nitrogen atoms, at least 80 mol % of the radicals Xj and, if appropriate, Xk being identical to the radicals Xa other than those of the formula III and, if appropriate, Xb.
Those compositions containing components A) and B) are very particularly preferred in which component A) consists of lO0 mol % of recurring struc-tural units of the formula I and component B) consists of 100 mol ~ of recurring structural units of the formula XXXI and xi is a divalent aromatic diamine radical which is substituted by Cl-C6alkyl in both ortho-positions relative to each of the two nitrogen atoms.
Those compositions containing components A') and B) are also particularly ;77~
preferred in which component A') consists of 10-60 mol % of recurring structural units of the formula XXVIII and of 90-40 mol ~ of recurring structural units of the formula XXIX, a 3,3',4,4'-thioxanthonetetra-carboxylic acid radical being present in the formula XXVIII, zd and ze are radicals of 3,3'4,4~-benzophenonetetracarboxylic acid and Xg and Xh independently of one another are divalent aromatic diamine radicals which are substituted by Cl-C6alkyl in at least one and preferably both ortho-positions relative to the two nitrogen atoms, at least 60 mol % of the radicals xi and, if appropriate, Xk being identical to the radicals Xg and Xh.
Those compositions of components A') and B) are very particularly preferred in which component B) consists of 100 mol % of recurring structural units of the formula XXXI and Xg and Xh independently of one another are divalent aromatic diamine radicals which are substituted by Cl-C6alkyl in both ortho-positions relative to each of the two nitrogen atoms.
Preferably, the preferred embodiments with respect to compositions of A)/B) or A')/B) are polyimides with diamine radicals of the formulae XV to XVIII
defined above.
Radiation-sensitive coatings of high photoactivity can be prepared from the copolyimides according to the invention or from the compositions of com-ponents A) and B) or A') and B).
The copolyimides and the mixtures are as a rule soluble in a large number of inert organic solvents of different polarity and are preferably employed in the form of their solutions.
Examples of suitable solvents are polar aprotic solvents which can be used by themselves or as mixtures of at least two solvents. Examples are:
ethers, such as dibutyl ether, tetrahydrofuran, dioxane, ethylene glycol, dimethylethylene glycol, dimethyldiethylene glycol, diethyldiethylene glycol or dimethyltriethylene glycol, halogenated hydrocarbons such as methylene chloride, chloroform, 1,2-dichloroethane, l,l,l-trichloroethane or 1,1,2,2-tetrachloroethane, carboxylic acid esters and lactones such as ~29577~1 ethyl acetate, methyl propionate, ethyl benzoate, 2-methoxyethyl acetate, y-methoxypropyl acetate, y-butyrolactone, o-valerolactone and pivalol-actone, carboxylic acid amides and lactams such as formamide, acetamide, N-methylformamide, N,N-dimethylformamide, N,N-diethylformamide, N,N-di-methylacetamide, N,N-diethylacetamide, y-butyrolactam, s-caprolactam, N-methyl-pyrrolidone, N-acetylpyrrolidone, N-methylcaprolactam, tetramethyl-urea or hexamethylphosphoric acid amide, sulfoxides such as dimethyl sul-foxide, sulfones such as dimethyl sulfone, diethyl sulfone, trimethylene sulfone or tetramethylene sulfone, and substituted benzenes such as chloro-benzene, o-dichlorobenzene, nitrobenzene, phenols or cresols.
Undissolved portions can be removed by filtration, preferably by pressure filtration. The polymer concentration in the coating agent thus obtained is preferably not more than 50~ by weight, especially not more than 30% by weight and in particular not more than 20~ by weight, relative to the solution. i, In the preparation of the solutions, further conventional additives can be incorporated which do not adversely affect the light sensitivity. Examples of these are matting agents, flow agents, highly disperse fillers, flame-proofing agents, fluorescent brighteners, sensitizers, antioxidants, sta-bilizers, light stabilizers, dyes, pigments, adhesion promoters and anti-halo dyes such as are described, for example, in US Patent Specification 4,349,619.
The coating agent can be applied to suitable substrates or carrier mate-rials by means of conventional methods, such as dipping, brushing and spraying processes or by whirler-coating, cascade-coating and curtain-coating.
Examples of suitable substrates are plastics, metals and metal alloys, metalloids, semiconductors, glass, ceramics and other inorganic materials, for example SiO2 and Si3N4.
The solvent is then removed, if necessary by heating and if necessary in vacuo. This gives tack-free, dry and uniform films. Depending on the use, the applied films can have layer thic~nesses of up to 50~m and more.
i77~
Protective films of polyimides or polyimide mixtures can be modified further by the action of radiation, whereby, for example, even Eurther en-hanced thermal stabilities are obtainable. It is also possible to use these polyimides or polyimide mixtures as a photographic recording material for relief images. The polymer layer of the material according to the in-vention has a light sensitivity which is high for this class of compounds, and it can be photocrosslinked directly. Due to the direct crosslinking under the action of radiation, additives such as sensitizers can be avoided, and the protective layers, images and films have excellent elec-trical properties. However, additional sensitisers can also be used.
Moreover, the protective layers, images and films are distinguished by a high adhesive strength and thermal, mechanical and chemical resistance.
During thermal aftertreatments, only slight shrinkage is observed, which has considerable advantages in use, because virtually no distortion of imaged structures is observed and/or because no internal strains are generated in coatings and films.
The material is stable on storage, but should advantageously be protected from the action of light.
Protective films or relief structures are as a rule produced by imagewise exposure through a photomask, subsequent development with a solvent or solvent mixture, the unexposed areas being removed, whereupon the image produced can, if desired, be stabilized by thermal aftertreatment.
The invention also relates to a process for producing protective films or relief structures, which comprise the steps of i) coating a carrier material with a copolyimide or a polyimide mixture as defined above, ii) irradiating the coated material with a pattern of actinic radiation, so that the irradiated areas of said polymer layer are crosslinked, and iii) developing the system with a suitable developer.
Moreover, the invention also relates to the protective coatings and relief images obtained by radiation-crosslinking.
~ ~357~
The photostructuring or photocrosslinking can be initiated by actinic radiation, for example by W light, X-rays, laser light or electron beams, in particular by W light of wavelengths 365 and 405 nm.
Using the copolyimides or polyimide mixtures of this invention it is possible to produce highly resolved relief structures even on light-scattering or light-reflecting substrates such as ceramics or aluminium.
Examples of fields of application are protective, insulating and passivat-ing coatings in electrical engineering and electronics, photomasks for electronics, textile printing and the graphic trade, etch resists for the production of printed circuits and printing plates and integrated circuits, relays for the production of X-ray masks, as a solder resist, as a die-electric for multilayer circuits and as a structural element for liquid crystal displays.
The invention also relates to the use of the copolyimides or polyimide com-positions defined above for the production of insulating, passivating and protective layers and of relief images. For these applications, the layer thickness of the polymer layer is preferably 0.5 to 100 ~m, especially 1 to 50 ~m and in particular 1 to 10 um-The examples which follow illustrate the invention.
I. General experimental conditions The novel photosensitive polyimides or the components of the polyimide mix-tures are produced and isolated by processes as described in EP-A-132,231 and EP-A-181,837.
Photosensitive layers of these novel polyimide systems are prepared by whirler-coating from a solution, ready-to-use solutions being obtained by dissolving the individual polyimides or the resin mixtures in 4-butyro-lactone or N-methylpyrrolidone as the solvents to a total solids content of 5.0-15.0~ and subjecting the solutions then to a pressure filtration through filters of 0.2-0.8 ~m pore width.
~ 77~7 For determining the photosensitivity, highly resolved relief structùres of 1.00 ~ 0.05 ~m layer thickness are produced on silicon wafers, an appro-priate chromium mask having lines down to 1.0 ~m being used, and different parts of a wafer also being exposed at different energies.
After development by spraying on a suitable developer solution, fine struc-tures of an exposure range are obtained. The structure widths of the lines of 4 ~m nominal width are determined optically, and the exposure energy required for the polyimide system is established by comparison with a stand-ard system.
The exposure machine used is an MJB 55 mask-adjusting and -exposure machine made by Rarl Suss, which emits power in the region of the lines at 365 nm, 405 nm and 436 nm. The wafers are exposed in vacuum contact.
Before each whirler-coating, the substrate is pretreated with a solution of 3-aminopropyltriethoxysilane as an adhesion promoter.
To assess the behaviour on highly reflective or light-scattering sub-strates, 2.0-10.0 ~m thick layers are produced on ceramic substrates of 63 x 63 mm in size. An exposure series of finè structures is again produced, the assessment being carried out by inspection in a scanning electron microscope.
The spectral sensitivities are determined by filtering the light of theexposure apparatus through mercury line interference filters, monochromatic exposures thus being carried out with the individual emission lines of the mercury lamp spectrum. The radiation energies are here measured using an OAI power meter and the 400 or 365 nm probes, and the radiation output of the entire mercury lamp spectrum is related to the 400 nm probe.
The physical properties of the individual polymers are characterized bytheir glass transition temperature (Ty) and their inherent viscosities ~ inh (0-5~ by weight in NMP at 25C).
7~7~
II. Individual examples Example 1: A photopolyimide 1, containing 90.9~ of benzophenonetetra-carboxylic dianhydride (BTDA) and 9.1 mol ~ of thioxanthonetetracarboxylic dianhydride, is prepared in accordance with the following formulation:
Thioxanthonetetracarboxylic dianhydride 0~3523 g = 1 mmol (corresponding to EP-A-181,837, Example b) BTDA 3.2211 g = 10 mmol 1,4-Diamino-2,3,5,6-tetramethylbenzene 0.9937 g = 6.05 mmol 4~4~-Diamino-3~3~-dimethyl-S~sl-diethyl-diphenylmethane 1.3973 g = 4.95 mmol The thioxanthonetetracarboxylic dianhydride is first allowed to react for 30 minutes at 0-5C with the mixture of the diamines until a clear solution has formed, and the BTDA is then added. After the imidization, this gives a polyimide having the following physical data:
ninh = 0.88 dl/g Tg = 369C.
1 ~m thick layers of this polymer on silicon wafers are obtained by whir-ler-coating (after applying 3-aminopropyltriethoxysilane as an adhesion promoter) for 2S seconds at 3,700 rpm with a filtered 9.0~ solution in 4-butyrolactone, and then drying the layers for 30 minutes at 80C on a hot plate.
For developing highly resolved fine structures after exposure through achromium mask, cyclopentanone is sprayed on for 31 seconds, followed by a 5 second rinsing cycle with xylene.
In this case, an illumination energy of 165 mJ/cm2 is necessary to pro-duce good structures, if the full line spectrum of the exposure machine (365 nm + 405 nm + 436 nm) is used for the exposure.
If the emission line at 405 nm is filtered out, the re~uired exposure energy is 173 mJ/cm2, measured monochromatically.
~Z9577~
Highly }esolved relief structures on a strongly reflecting and light-scattering substrate are obtained, when the 9% solution of the polymer 1 is whirler-coated for 25 seconds at 1,350 rpm onto ceramic substrates, and the coating is dried Eor 30 minutes at 80C and then exposed through a test mask with the USAF 1951 pattern (isolated lines).
When exposing with a total energy (all the spectral lines of the exposure machine) of 141 mJ/cm2 and then developing for 50 seconds by spraying on cyclopentanone in a spray developer, highly resolved relief structures are obtained in spite of a rough surface topology, even the 7.4 structure element (2.8 ~m wide isolated lines) of the 2.5 ~m thick image elements obtained being still resolved.
Example 2: (Polyimide mixture) A polymer 2, prepared according to EP-A-132,221 from benzophenonetetracarboxylic dianhydride 100 mol ~
1,4-diamino-2,3,5,6-tetramethylbenzene 55 mol ~ and 4,4'-diamino-3,3'-dimethyl-5,5'-diethyl-diphenylmethane 45 mol %, is processed together with polymer 1 in the following manner to give a polyimide blend.
Polyimide 1: 0.175 g (30% by weight) n inh = 0.88 dl/g;
Polyimide 2- 0.408 g ~70% by weight)n inh = 0.97 dl/g;
4-Butyrolactone: 6.276 g.
The silicon wafer is whirler-coated with the overall 8.5~ solution at 3,800 rpm (20 seconds), layers of 1.0 ~m thickness being produced.
An illumination energy of 327.5 mJ/cm2 is necessary to produce good fine structures of 4 ~m width, development being carried out with cyclopentanone for 24 seconds. In the scanning electron microscope, the structures show a homogeneous nature of the material.
Examples 3-13: The chemical compositions of the polymers used in Examples 3-13 and their physical data can be seen in Table 1. The polymers are prepared according to EP-A-132,221, EP-A-181,837 and Example 1.
~2~i7~74 The properties, process datz and photosensitivities of the photopolyimides or polyimide mixtures from Examples 3-13 can be seen in Table Z, together with the data for Examples 1-2.
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It has now been found that small proportions of thioxanthonetetracarboxylic acid radicals lead, surprisingly, to polyimides of high photosensitivity.
This is also of interest for economic reasons, since such systems contain only small proportions of thioxanthonetetracarboxylic acid which is expen-sive to prepare.
By means of incorporating small quantities of the sensitizer into an inherently non-photoactive material, highly active compounds can thus be prepared without substantially changing the physico-chemical properties of the base polymer.
Moreover, these copolymers can be combined with structurally related, but not necessarily photoactive polyimides to give photoactive materials. The possibilities of variation of highly photosensitive polyimides with respect to material properties, such as thermal stability, glass transition temp-erature, water absorption, modulus of elasticity, elongation at break and coefficient of thermal expansion, are thus greatly widened. The systems can also be varied in their optical and photochemical behaviour. Thus, Eor example, the optical absorption can be precisely adjusted to given layer thicknesses and substrates.
The present invention relates to copolyimides comprising 100-70 mol ~ of recurring structural units of the Eormula I and 0-30 mol ~ of recurring structural units of the formula II
/ _ ~ \z V ~ -X~ b ~ -X~- (II) in which za is a tetravalent aromatic tetracarboxylic acid radical other than that of thioxanthonetetracarboxylic acid, the carboxyl groups thereof in each case being located in pairs in the ortho-position or peri-position relative to one another, and xa is a divalent aromatic diamine radical which, in at least one ortho-position relative to at least one nitrogen atom, carries a hyclrocarbon substituent having at least one aliphatic ~-hydrogen atom or Xa is a radical of the formula III
~2~77~
in which xC is a divalent aromatic diamine radical which, in ortho-position relative to the two nitrogen atoms, carries in each ease at least one monovalent hydrocarbon substituent having at least one aliphatic ~-hydrogen atom, and n assumes an average value of 1.0 to 2.5, zb is as defined for za and Xb is an aliphatie, cyeloaliphatic, aro-matic or araliphatic diamine radical, excluding a radical of the formula III, with the proviso that the proportion of radicals of the formula III
in the formula I is selected such that the quantity of thioxanthone-tetraearboxylie acid radieals, relative to the total quantity of tetra-earboxylic aeid units in the copolyimide, is between 1 and 30 mol %.
za and zb can be mononuclear or polynuclear, preferably mononuelear or dinuclear, carbocyclic-aromatic or heterocyclic-aromatic radicals, with the exception of thioxanthone radicals. Polynuclear radicals ean be fused or, preferably, be linked to one another via a bridge member.
Examples of suitable radieals za and zb are to be found in EP-A-181,837, the deseription of which is also the subjeet of the present deseription.
Preferred radicals za and zb are of the formulae IV to IX
1l (IV), I il I (V), I 1l_ (VI), R~ (IX), in which the free bonds are in each case located in pairs in the ortho-position relative to one another, Rl is a group of the formulae -CO-, -CH2-, -C(CH3)2-, -C(CF3)2-, -O-, -S-, -SO2-, -NR2-, -SiR3R4-, -SiR R -O~
Si~3R4- and -o-R5-SiR3R4-o-SiR3R4-R5-o-, R2 is hydroyen or Cl-C6alkyl, R3 and R4 independently of one another are Cl-C6alkyl, Cl-C6perfluoroalkyl, Cl-C6alkoxy or Cl-C6-perfluoroalkoxy and R5 is alkylene, preferably C2-C4alkylene. Preferably, Rl is -CO- or -C(CF3)2-.
Further preferred radicals za and zb are of the formula X and XI
Polyimides containing radicals of this type are known from EP-A-162,017.
Further preferred radicals za and zb are of the formula XII to XIV.
~ (XIV).
Polyimides containing radicals of this type are known from EP-A-181,837.
The aromatic diamine radical Xa must carry certain substituents and must have a certain substitution pattern.
Thus, in the diamine radical Xa other than that of the formula III, at least one ortho-position relative to a nitrogen atom must be substituted.
However several or all four ortho-positions relative to the nitrogen atoms or possible further positions in the aromatic nucleus can also be sub-stituted.
77~
The ortho-substituent can be a monovalent hydrocarbon radical having atleast one aliphatic ~-hydrogen atom or it can be a divalent hydrocarbon radical which has at least one ~-hydrogen atom and, together with the aromatic nucleus, forms a condensed system, for example an alkylene chain.
Further substituents in the ortho-position or in a non-ortho-position can also be of a different nature, for example halogen atoms, such as chlorine.
Examples of hydrocarbon substituents having at least one aliphatic ~
hydrogen atom are alkyl which may be interrupted in the chain by oxygen atoms or sulfur atoms, cycloalkyl, aralkyl or, in the case of divalent substituents, also alkylene.
Preferred monovalent hydrocarbon substituents are Cl-C6alkyl, cyclo-hexyl or benzyl, very particularly preferred are C1-C4alkyl and espe-cially methyl and ethyl.
Examples of suitable radicals Xa are to be found in EP-A-181,837. The diamine radical Xa other than that of the formula III is, particularly preferably, as defined for the diamine radical xC in formula III.
xc is likewise a specifically substituted aromatic diamine radical. The substituents are monovalent hydrocarbon radicals which have at least one aliphatic ~-hydrogen atom. ~owever, both nitrogen atoms must have at least one ortho-substituent. These can be radicals xC which are sub-stituted asymmetrically relative to the ortho-substituents or preferably symmetrically substituted radicals XC. EXamples of suitable radicals xC
are to be found in EP-A-181,837.
The aromatic diamine radicals, on which Xa and xC are based, are in general substituted carbocyclic-aromatic radicals having nuclei of 6 to 22 C atoms. These radicals can be mononuclear or represent polynuclear aromatic systems which are fused or mutually linked via bridge groups.
Preferably, they are substituted phenylene radicals or two substituted 1,3- or 1,4-phenylene radicals which are linked via a direct bond or via a bridge group Rl as defined above for radicals of the formula IX.
~.~g~77~
The structural elements of the formula II are, as appropriate, co-condensed in quantities of up to 30 mol ~, preferably up to 20 mol ~, relative to the total polymer, into the copolyimide according to the invention, in order to modify properties of the polymer, for example adhesive strength or polarity.
Examples of the diamine component Xb in formula II are to be found in EP-A-181,837.
Examples of aliphatic radicals Xb are C2-C20alkylene radicals which may be interrupted in the chain by oxygen atoms or sulfur atoms such as ethylene, tri-, tetra-, penta-, hexa-, hepta-, octa-, nona-, deca-, dodeca-, tetra-deca-, hexadeca-, octadeca- or eicosamethylene or di-, tri- or tetra-toxaethylene), -(oxapropylene) or -(oxabutylene).
Aliphatic radicals Xb within the scope of this description are also to be understood as meaning siloxane radicals having aliphatic substituents or siloxane-modified aliphatic radicals.
Amongst the aliphatic radicals Xb, radicals containing siloxane groups should be mentioned especially. Examples of these groups are to be found in EP-A-132,221 or in EP-A-54,426.
Examples of cycloaliphatic radicals Xb are 1,2-, 1,3- or 1,4-cyclo-pentylene or -cyclohexylene.
Examples of aromatic diamine radicals Xb are arylene radicals having 6 to 22 C atoms. These radicals can be mononuclear or can be polynuclear aromatic systems which are fused or mutually linked via bridge groups.
Preferably they are phenylene radicals, such as 1,3- or 1,4-phenylene, or 1,3- or 1,4-phenylene radicals which are linked via a direct bond or a bridge group -Rl- as defined above for radicals of the formula IX, such as 4,4'-diphenylmethane, 4,4'-diphenyl ether or 4,4'-diphenyl sulfone.
They can also be substituted aromatic radicals, for example the groups defined for Xa (with the exception of radicals of the formula III) or XC.
~2~,~77~
An example oE an araliphatic radical Xb is xylylene.
In any C1-C6alkyl, C1-C6alkoxy, C1-C6perfluoroalkyl or C1-C6perfluoro-alkoxy radicals, the alkyl radicals or perfluoroalkyl radicals can be straight-chain or branched.
Examples of such radicals are methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, n-pentyl, n-hexyl and the corresponding perfluoro-alkyl, alkoxy or perfluoroalkoxy groups.
The straight-chain radicals are preferred.
In the thioxanthone radical of the formula III, the carbonyl groups forming the imide system are in each case located in pairs in the ortho-position relative to one another. Those radicals of the formula III are preferred in which the carbonyl groups are in the 3,3',4,4'-position.
~he index n is preferably an average value (number average) from 1.0 to 1.8, and very particularly from 1.0 to l.5. The proportion of the thio-xanthone radicals, relative to the total quantity of the tetracarboxylic acid units in the copolyimide, is preferably 2.0 to 20 mol ~, particularly preferably 3.0 to 15 mol ~, and very particularly preferably 5.0 to 15 mol ~.
Those copolyimides having the recurring structural units of the formula I
and, if appropriate, of the formula II as defined above are preferred in which za and zb are radicals of the formulae IV and/or IX.
Those copolyimides having the recurring structural units of the formual I
and, if appropriate, of the formula II are very particularly preferred in which za and zb are radicals of the formulae IV and/or IX and Rl is -CO-, -O-, -C~-, -C(C~3)2- and especially -C(CF3)2-.
Those copolyimides consisting of the recurring structural units of the formula I and, if appropriate, the formula II are also preferred in which the proportion of thioxanthone radicals, relative to the total quantity of 7~
tetracarboxylic acid units in the copolyimide, is 5.0 to 15 mol %.
Those copolyimides consisting of recurring st}uctural units of the formula I and, if appropriate, of the formula II are very particularly preferred in which n assumes an average value of 1.0 to 1.5.
Those copolyimides consisting of recurring structural units of the formula I and, if appropriate, of the formula II are also particularly preferred in which all the radicals xa other than those of the formula III are divalent radicals of an aromatic diamine which carries in the ortho-position, preferably in both ortho-positions, relative to the two nitrogen atoms in each case at least one monovalent hydrocarbon radical having ali-phatic a-hydrogen atoms, preferably a Cl-C6alkyl radical, and in which the radicals xC in formula III are derived from aromatic diamines in which both ortho-positions of both nitrogen atoms each carry monovalent hydrocarbon radicals having aliphatic a-hydrogen atoms, preferably Cl-C6-alkyl radicals, and in which Xb, if present, is in particular a siloxane modified alkylene radical.
Those copolyimides consisting of recurring structural units of the formula I and, if appropriate of the formula II are very particularly preferred in which all the radicals xa, Xb and xC have the same definition.
Particularly preferred diamine radicals in these preferred embodiments are the groups of the formulae XV to XVIII
CH3\ ~!~ /CH3 CH3\ ~!, /CH3 ¦ 1~ ( xY),t il (XVI), CH3 ~j CH3 CH3 ~- \
ICH 3 ~ ~R~
T li (XVII),\ /-~Z~-\ /-~(XVIII), C 2 H s ~ T C2Hs '=- \R7 ~z~
in which Z is a direct bond or -O-, -CH2- or -C(CF3)2- and R6 and R7 independently of one another are Cl-C6alkyl, especially methyl or ethyl.
Radicals of the formula XVIII, in which Z is -C~2- or -C(CF3)2- and R6 and R7 are methyl or ethyl`, are very particularly preferred.
Those copolyimides consisting of recurring structural units of the formula I are very particularly preferred in which all the radicals xC and the radicals xa other than those of the formula III are derived from aromatic diamines in which both ortho-positions of both nitrogen atoms in each case carry monovalent hydrocarbon radicals having aliphatic -hydrogen atoms, especially Cl--C6alkyl groups, and with very particular preference are groups of the formulae XV to XVIII.
The copolyimides according to the invention have average molecular weights (weight average Mw) of at least 5,000, preferably at least 10,000. The upper limit depends essentially on properties which determine the process-ability, for example their solubility. The limit can be up to 500,000, preferably 100,000 and especially up to 60,000. Moreover, these can be random copolyimides or block copolyimides. They are prepared by conven-tional processes in equipment provided for this purpose.
The copolyimides according to the invention are advantageously prepared by polycondensation of the corresponding tetracarboxylic acids with the corresponding diamines. In place of the tetracarboxylic acids, their polyimide-forming derivatives, for example their dianhydrides, carboxylic acid chlorides, tetraalkyl esters or alkyl half-esters can also be used.
Depending on the nature of the diamine radicals xa, Xb and XC, the polycondensation can be carried out in different ways.
If xa, Xb and xC are each aromatic diamine radicals which carry at least one hydrocarbon substituent having aliphatic -hydrogen atoms in each ortho-position relative to both nitrogen atoms, the polycondensation can be carried out by directly reacting the tetracarboxylic acids of the formulae XIX, XX and, if appropriate, XXI or their polyimide-forming derivatives, preferably the dianhydrides, with substantially equivalent ~Z~7~
quantities of one or more diamines of the ~ormulae XXII, XXIII, and, if appropriate, XXIV in a manner known per se HOOC COOH HOOC~ . /COOH
\za/ (XIX), i 1I T 11 (xx), HOOC \COOH Hooc~- S ~ COOH
HOOC COOH H2N-Xd-NHz (XXII), H2N-X -NHz (XXIII), \zb/ (XXI).
HOOC/ \COOH H2~-Xe-NH2 (XXIV), in which za, zb and xC are as defined above and Xd and Xe can assume one of the meanings defined for xC (process a). The starting compounds of the formulae XIX to XXIV are known per se and are described, for example, in the abovementioned patent applications relating to auto-photocrosslinkable polyimides. ..
In this embodiment, the proportion of thioxanthonetetracarboxylic acid is between 1 and 30 mol ~, relative to the quantity of the radicals XIX to XXI.
A further preparation process (process b) is suitable for synthesizing the copolyimides obtainable according to process a or of the other copolyimidec according to the invention having diamine radicals Xa other than those of the formula III, which do not carry a hydrocarbon substituent having at least one aliphatic ~-hydrogen atom in each of the ortho-positions relative to both nitrogen atoms, for example with ortho-monosubstituted aromatic diamine radicals Xa or Xb, or with non-aromatic diamine radicals Xb.
In process b, the polycondensation is carried out in two stages. Initially, a precondensate of the formula XXV is prepared and, if desired, separated into its components which are isolated . CR .~RC . ¦' ~xxv~, ~ H N ~ X ~ X NH
by polycondensating a compound of the formula XX or one of its polyimide-forming derivatives with an excess of a diamine of the formula XXIII in a manner known per se. In this case, the molar ratio of the two components is to be selected such that an average value n of between 1.0 and 2.5 results. These selection criteria are known per se to a person skilled in the art of polycondensation processes.
Advantageously, a molar ratio of tetracarboxylic acid (derivative) to diamine of 1:1.5 to 1:20, preferably from 1:2 to 1:10, is selected. The precondensate of the formula XXV is then polycondensed in a second stage with the remaining tetracarboxylic acid components and, if appropriate, diamine components of the formulae XIX, XXI, XXVI and XXVII in a manner known per se H2N-Xf-NH2 (XXVI) and H2N-Xb-NH2 (XXVII);
in this case, xf has one of the meanings defined for xa with the excep-tion of the formula III and Xb is as defined above.
~he quantitative ratios of the components of the formulae XIX and, if appropriate, XXI, XXVI and XXVII in this second stage are advantageously selected such that a virtually equivalent total quantity of the diamines corresponds to the total quantity of the tetracarboxylic acid (derivatives).
The quantity of diamine XXV is selected such that the thioxanthone radical content in the copolymer corresponds to the quantity defined above. The starting compounds of the formula XXVI and XXVII are likewise known and are described, for example, in the abovementioned patent applications relating to auto-photocrosslinkable polyimides.
The polycondensations are preferably carried out in solution. ~he solvents used are polar organic solvents which are inert to the reactants. Examples of these are listed below.
~he polycondensations proceed, depending on the reaction temperature, initially up to the polyamide acid intermediate which is then cyclized with elimination of water. The cyclization can take place thermally or it is ~57~
carried out advantageously under the action of dehydrating agents such as carboxylic acid anhydrides, for example acetic anhydride, or tertiary amines such as triethylamine.
The reaction temperatures are known per se to a person skilled in the art of polycondensations. Preferred reaction temperatures are between -10C
and +20C.
The copolyimides A) according to the invention can be combined with struc-turally related, but not necessarily photoactive polyimides B) to give photoactive materials of high radiation sensitivity.
In the case that component B) is a polyimide with a large proportion of benzophenonetetracarboxylic acid radicals, highly radiation-sensitive combinations can also be prepared using a modified component A') which contains a thioxanthonetetracarboxylic acid radical proportion of 20 - 100 mol %, relative to the total number of tetracarboxylic acid units in component A').
In all these cases, the selection criterion is the total quantity of thio-xanthonecarboxylic acid radicals in the mixture, which amounts to 1.0 to 30 mol % relative to all the tetracarboxylic acid radicals in the polyimide mixture. Moreover, the nature of the tetracarboxylic acid components and diamine components in both polyimide components must be such that miscibil-ity of both components in one another is guaranteed.
The invention also relates to compositions essentially containing, as the polyimide components A) a copolyimide or a mixture of copolyimides consisting of 100-70 mol %, in particular 100-80 mol %, of recurring structural units of the formula I
and 0-30 mol ~, in particular 0-20 mol ~, of recurring structural units of the formula II as defined above, the total quantity of thioxanthone radi-cals in component A), relative to the total quantity of all tetracarboxy-lic acid radicals in this component, being 2.0 to ~0 mol 3, or A') a polyimide or a mixture of polyimides consisting of 100-20 mol % of recurring structural units of the formula XXVIII, 0-80 mol ~ of recurring ~S774 structural units of the formula XXIX and 0-30 mol %, in particular 0-20 mol %, of recurring structural units of the formula XXX
\~/\S/~
~ ll ? N-Xh- (XXIX~ \ /Z ~ -X - (XXX~, in which zc can assume one of the meanings defined for za and Xg, Xh and xi independently of one another can assume one of the meanings defined for XC, and B) a polyimide or a mixture of polyimides consisting of 100-~0 mol % of recurring structural units of the formula XXXI and of 0-20 mol % of re-curring structural units of the formula XXXII
- ~\ /Z \ ~ -XI- (XXXI), ~ e/ ~ _Xk_ (xXXII)~
in which zd and ze independently of one another can assume one of the meanings defined for za, Xi can assume one of the meanings defined for xa with the exception of the formula III and Xk can assume one of the meanings defined for Xb, it being necessary in the case of the A)/B) mixtures that at least 70 mol % of the radicals zd and, if appropriate, ze in component B), relative to the total quantity of these radicals, are identical to the radicals za and, if appropriate, zb in component A) and at least 70 mol ~ of the radicals xi and, if appropriate, Xk in component B), relative to the total quantity of these radicals are identi-cal to the radicals Xa other than those of the formula III and, if appropriate, to the radicals Xb in component A), or it being necessary that at least 40 mol ~, preferably at least 45 mol %, of the radicals X
and, if appropriate, Xk in component B), relative to the total quantity 5~74 of these radicals, are identical to the radicals Xg and, if appropriate, xh and xi in component A'), with the proviso that the combination A')/B) is possible in the case where 80-100 mol 3 of the tetracarboxylic acid radi-cals of component B) are derived from ben~ophenonetetracarboxylic acid and that the combinations A)/B) are possible in all other cases, and that in all combinations A j/B) and A')/B) the quantity of the com-ponents A) or A') is selected such that the quantity of thioxanthone-tetracarboxylic acid radicals, relative to the total quantity of the tetra~
carboxylic acid radicals in the polyimide mixture, is between 1.0 and 30 mol %, in particular, between 1.0 and 20 mol %.
The thioxanthone radical content in the polyimide o~ component A) deviates slightly from the above definition of the polyimides according to the invention, since the total thioxanthonetetracarboxylic acid radical content is reduced by the dilution with component B). The polyimides of component A) can be obtained analogously to the processes described above by using the corresponding quantities of the starting compounds XIX to XXVII.
The polyimides of components A') are generally known from EP-A-181,837.
:
The polyimides of component B) are known per se from EP-A-132,221 and -134,752.
The tetracarboxylic acid radicals zc, zd and ze are preferably as defined above for prefe}red radicals za.
With particular preference, these radicals o~ the formula IV and IX, especially radicals of the formula IX, in which Rl is -CO-, -O-, -CH2-or -C(CF3)2 The diamine radicals Xg, Xh and~Xi preferably assume one of the pre-ferred meanings deflned above for XC. : :~
The diamine radical Xj preferably assumes one of the preferred meaningsdefined above for xa.
.
3l2~
The diamine radical Xk preferably assumes one of the preferred meaningsdefined above for Xb.
With very particular preference, Xg, Xh, Xi, Xj and Xk are radicals of the formulae XV to XVIII.
Preferred polyimide compositions of A) and B) or of A') and B) contain a total quantity of thioxanthonetetracarboxylic acid radicals oE between 1.0 and 15 mol %, and very particularly between 3.0 and 15 mol %, relative to the total quantity of all tetracarboxylic acid radicals in the polyimide mixture.
Those compositions containing components A) and B) are particularly pre-ferred in which, in component A), the radicals Xa other than those of the formula III and the radicals xC are substituted by C1-C6alkyl in each of the two ortho-positions relative to both nitrogen atoms, the carbonyl groups in the radical of the formula III are in the 3,3',4,4'-position, n is an averàge value from 1.0 to 1.5 and za and, if appropriate, zb are radicals of the formula IV or IX as defined above, especially radicals of the formula IX, in which Rl is -CO-, -O- or -C(CF3)2-, and in which, in component Bl, zd and, if appropriate, ze are radicals of the formula IV or IV as defined above, in particular radicals of the formula IX, in which is -O- or -C(CF3)2-, Xi is a divalent aromatic diamine radical which is substituted by Cl-C6alkyl in at least one ortho-position, preferably in both ortho-positions, relative to both nitrogen atoms, at least 80 mol % of the radicals Xj and, if appropriate, Xk being identical to the radicals Xa other than those of the formula III and, if appropriate, Xb.
Those compositions containing components A) and B) are very particularly preferred in which component A) consists of lO0 mol % of recurring struc-tural units of the formula I and component B) consists of 100 mol ~ of recurring structural units of the formula XXXI and xi is a divalent aromatic diamine radical which is substituted by Cl-C6alkyl in both ortho-positions relative to each of the two nitrogen atoms.
Those compositions containing components A') and B) are also particularly ;77~
preferred in which component A') consists of 10-60 mol % of recurring structural units of the formula XXVIII and of 90-40 mol ~ of recurring structural units of the formula XXIX, a 3,3',4,4'-thioxanthonetetra-carboxylic acid radical being present in the formula XXVIII, zd and ze are radicals of 3,3'4,4~-benzophenonetetracarboxylic acid and Xg and Xh independently of one another are divalent aromatic diamine radicals which are substituted by Cl-C6alkyl in at least one and preferably both ortho-positions relative to the two nitrogen atoms, at least 60 mol % of the radicals xi and, if appropriate, Xk being identical to the radicals Xg and Xh.
Those compositions of components A') and B) are very particularly preferred in which component B) consists of 100 mol % of recurring structural units of the formula XXXI and Xg and Xh independently of one another are divalent aromatic diamine radicals which are substituted by Cl-C6alkyl in both ortho-positions relative to each of the two nitrogen atoms.
Preferably, the preferred embodiments with respect to compositions of A)/B) or A')/B) are polyimides with diamine radicals of the formulae XV to XVIII
defined above.
Radiation-sensitive coatings of high photoactivity can be prepared from the copolyimides according to the invention or from the compositions of com-ponents A) and B) or A') and B).
The copolyimides and the mixtures are as a rule soluble in a large number of inert organic solvents of different polarity and are preferably employed in the form of their solutions.
Examples of suitable solvents are polar aprotic solvents which can be used by themselves or as mixtures of at least two solvents. Examples are:
ethers, such as dibutyl ether, tetrahydrofuran, dioxane, ethylene glycol, dimethylethylene glycol, dimethyldiethylene glycol, diethyldiethylene glycol or dimethyltriethylene glycol, halogenated hydrocarbons such as methylene chloride, chloroform, 1,2-dichloroethane, l,l,l-trichloroethane or 1,1,2,2-tetrachloroethane, carboxylic acid esters and lactones such as ~29577~1 ethyl acetate, methyl propionate, ethyl benzoate, 2-methoxyethyl acetate, y-methoxypropyl acetate, y-butyrolactone, o-valerolactone and pivalol-actone, carboxylic acid amides and lactams such as formamide, acetamide, N-methylformamide, N,N-dimethylformamide, N,N-diethylformamide, N,N-di-methylacetamide, N,N-diethylacetamide, y-butyrolactam, s-caprolactam, N-methyl-pyrrolidone, N-acetylpyrrolidone, N-methylcaprolactam, tetramethyl-urea or hexamethylphosphoric acid amide, sulfoxides such as dimethyl sul-foxide, sulfones such as dimethyl sulfone, diethyl sulfone, trimethylene sulfone or tetramethylene sulfone, and substituted benzenes such as chloro-benzene, o-dichlorobenzene, nitrobenzene, phenols or cresols.
Undissolved portions can be removed by filtration, preferably by pressure filtration. The polymer concentration in the coating agent thus obtained is preferably not more than 50~ by weight, especially not more than 30% by weight and in particular not more than 20~ by weight, relative to the solution. i, In the preparation of the solutions, further conventional additives can be incorporated which do not adversely affect the light sensitivity. Examples of these are matting agents, flow agents, highly disperse fillers, flame-proofing agents, fluorescent brighteners, sensitizers, antioxidants, sta-bilizers, light stabilizers, dyes, pigments, adhesion promoters and anti-halo dyes such as are described, for example, in US Patent Specification 4,349,619.
The coating agent can be applied to suitable substrates or carrier mate-rials by means of conventional methods, such as dipping, brushing and spraying processes or by whirler-coating, cascade-coating and curtain-coating.
Examples of suitable substrates are plastics, metals and metal alloys, metalloids, semiconductors, glass, ceramics and other inorganic materials, for example SiO2 and Si3N4.
The solvent is then removed, if necessary by heating and if necessary in vacuo. This gives tack-free, dry and uniform films. Depending on the use, the applied films can have layer thic~nesses of up to 50~m and more.
i77~
Protective films of polyimides or polyimide mixtures can be modified further by the action of radiation, whereby, for example, even Eurther en-hanced thermal stabilities are obtainable. It is also possible to use these polyimides or polyimide mixtures as a photographic recording material for relief images. The polymer layer of the material according to the in-vention has a light sensitivity which is high for this class of compounds, and it can be photocrosslinked directly. Due to the direct crosslinking under the action of radiation, additives such as sensitizers can be avoided, and the protective layers, images and films have excellent elec-trical properties. However, additional sensitisers can also be used.
Moreover, the protective layers, images and films are distinguished by a high adhesive strength and thermal, mechanical and chemical resistance.
During thermal aftertreatments, only slight shrinkage is observed, which has considerable advantages in use, because virtually no distortion of imaged structures is observed and/or because no internal strains are generated in coatings and films.
The material is stable on storage, but should advantageously be protected from the action of light.
Protective films or relief structures are as a rule produced by imagewise exposure through a photomask, subsequent development with a solvent or solvent mixture, the unexposed areas being removed, whereupon the image produced can, if desired, be stabilized by thermal aftertreatment.
The invention also relates to a process for producing protective films or relief structures, which comprise the steps of i) coating a carrier material with a copolyimide or a polyimide mixture as defined above, ii) irradiating the coated material with a pattern of actinic radiation, so that the irradiated areas of said polymer layer are crosslinked, and iii) developing the system with a suitable developer.
Moreover, the invention also relates to the protective coatings and relief images obtained by radiation-crosslinking.
~ ~357~
The photostructuring or photocrosslinking can be initiated by actinic radiation, for example by W light, X-rays, laser light or electron beams, in particular by W light of wavelengths 365 and 405 nm.
Using the copolyimides or polyimide mixtures of this invention it is possible to produce highly resolved relief structures even on light-scattering or light-reflecting substrates such as ceramics or aluminium.
Examples of fields of application are protective, insulating and passivat-ing coatings in electrical engineering and electronics, photomasks for electronics, textile printing and the graphic trade, etch resists for the production of printed circuits and printing plates and integrated circuits, relays for the production of X-ray masks, as a solder resist, as a die-electric for multilayer circuits and as a structural element for liquid crystal displays.
The invention also relates to the use of the copolyimides or polyimide com-positions defined above for the production of insulating, passivating and protective layers and of relief images. For these applications, the layer thickness of the polymer layer is preferably 0.5 to 100 ~m, especially 1 to 50 ~m and in particular 1 to 10 um-The examples which follow illustrate the invention.
I. General experimental conditions The novel photosensitive polyimides or the components of the polyimide mix-tures are produced and isolated by processes as described in EP-A-132,231 and EP-A-181,837.
Photosensitive layers of these novel polyimide systems are prepared by whirler-coating from a solution, ready-to-use solutions being obtained by dissolving the individual polyimides or the resin mixtures in 4-butyro-lactone or N-methylpyrrolidone as the solvents to a total solids content of 5.0-15.0~ and subjecting the solutions then to a pressure filtration through filters of 0.2-0.8 ~m pore width.
~ 77~7 For determining the photosensitivity, highly resolved relief structùres of 1.00 ~ 0.05 ~m layer thickness are produced on silicon wafers, an appro-priate chromium mask having lines down to 1.0 ~m being used, and different parts of a wafer also being exposed at different energies.
After development by spraying on a suitable developer solution, fine struc-tures of an exposure range are obtained. The structure widths of the lines of 4 ~m nominal width are determined optically, and the exposure energy required for the polyimide system is established by comparison with a stand-ard system.
The exposure machine used is an MJB 55 mask-adjusting and -exposure machine made by Rarl Suss, which emits power in the region of the lines at 365 nm, 405 nm and 436 nm. The wafers are exposed in vacuum contact.
Before each whirler-coating, the substrate is pretreated with a solution of 3-aminopropyltriethoxysilane as an adhesion promoter.
To assess the behaviour on highly reflective or light-scattering sub-strates, 2.0-10.0 ~m thick layers are produced on ceramic substrates of 63 x 63 mm in size. An exposure series of finè structures is again produced, the assessment being carried out by inspection in a scanning electron microscope.
The spectral sensitivities are determined by filtering the light of theexposure apparatus through mercury line interference filters, monochromatic exposures thus being carried out with the individual emission lines of the mercury lamp spectrum. The radiation energies are here measured using an OAI power meter and the 400 or 365 nm probes, and the radiation output of the entire mercury lamp spectrum is related to the 400 nm probe.
The physical properties of the individual polymers are characterized bytheir glass transition temperature (Ty) and their inherent viscosities ~ inh (0-5~ by weight in NMP at 25C).
7~7~
II. Individual examples Example 1: A photopolyimide 1, containing 90.9~ of benzophenonetetra-carboxylic dianhydride (BTDA) and 9.1 mol ~ of thioxanthonetetracarboxylic dianhydride, is prepared in accordance with the following formulation:
Thioxanthonetetracarboxylic dianhydride 0~3523 g = 1 mmol (corresponding to EP-A-181,837, Example b) BTDA 3.2211 g = 10 mmol 1,4-Diamino-2,3,5,6-tetramethylbenzene 0.9937 g = 6.05 mmol 4~4~-Diamino-3~3~-dimethyl-S~sl-diethyl-diphenylmethane 1.3973 g = 4.95 mmol The thioxanthonetetracarboxylic dianhydride is first allowed to react for 30 minutes at 0-5C with the mixture of the diamines until a clear solution has formed, and the BTDA is then added. After the imidization, this gives a polyimide having the following physical data:
ninh = 0.88 dl/g Tg = 369C.
1 ~m thick layers of this polymer on silicon wafers are obtained by whir-ler-coating (after applying 3-aminopropyltriethoxysilane as an adhesion promoter) for 2S seconds at 3,700 rpm with a filtered 9.0~ solution in 4-butyrolactone, and then drying the layers for 30 minutes at 80C on a hot plate.
For developing highly resolved fine structures after exposure through achromium mask, cyclopentanone is sprayed on for 31 seconds, followed by a 5 second rinsing cycle with xylene.
In this case, an illumination energy of 165 mJ/cm2 is necessary to pro-duce good structures, if the full line spectrum of the exposure machine (365 nm + 405 nm + 436 nm) is used for the exposure.
If the emission line at 405 nm is filtered out, the re~uired exposure energy is 173 mJ/cm2, measured monochromatically.
~Z9577~
Highly }esolved relief structures on a strongly reflecting and light-scattering substrate are obtained, when the 9% solution of the polymer 1 is whirler-coated for 25 seconds at 1,350 rpm onto ceramic substrates, and the coating is dried Eor 30 minutes at 80C and then exposed through a test mask with the USAF 1951 pattern (isolated lines).
When exposing with a total energy (all the spectral lines of the exposure machine) of 141 mJ/cm2 and then developing for 50 seconds by spraying on cyclopentanone in a spray developer, highly resolved relief structures are obtained in spite of a rough surface topology, even the 7.4 structure element (2.8 ~m wide isolated lines) of the 2.5 ~m thick image elements obtained being still resolved.
Example 2: (Polyimide mixture) A polymer 2, prepared according to EP-A-132,221 from benzophenonetetracarboxylic dianhydride 100 mol ~
1,4-diamino-2,3,5,6-tetramethylbenzene 55 mol ~ and 4,4'-diamino-3,3'-dimethyl-5,5'-diethyl-diphenylmethane 45 mol %, is processed together with polymer 1 in the following manner to give a polyimide blend.
Polyimide 1: 0.175 g (30% by weight) n inh = 0.88 dl/g;
Polyimide 2- 0.408 g ~70% by weight)n inh = 0.97 dl/g;
4-Butyrolactone: 6.276 g.
The silicon wafer is whirler-coated with the overall 8.5~ solution at 3,800 rpm (20 seconds), layers of 1.0 ~m thickness being produced.
An illumination energy of 327.5 mJ/cm2 is necessary to produce good fine structures of 4 ~m width, development being carried out with cyclopentanone for 24 seconds. In the scanning electron microscope, the structures show a homogeneous nature of the material.
Examples 3-13: The chemical compositions of the polymers used in Examples 3-13 and their physical data can be seen in Table 1. The polymers are prepared according to EP-A-132,221, EP-A-181,837 and Example 1.
~2~i7~74 The properties, process datz and photosensitivities of the photopolyimides or polyimide mixtures from Examples 3-13 can be seen in Table Z, together with the data for Examples 1-2.
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:~ ~ ~: ~
3 I I ~ ~ o ¦ o ¦ ~ V-- -- _ ¦ _ ~ e ~ 3 ô ô ~ ô ~ ô .~
o ~: ~_ ! ~ ~ D D ~
~ c~ O ~h o I ~ X Z 00 a~ o ~ ~ ~ ~ ~ ~
Claims (19)
1. A copolyimide comprising 100-70 mol % of recurring structural units of the formula I and 0-30 mol % of recurring structural units of the formula II
(I), (II), in which Za is a tetravalent aromatic tetracarboxylic acid radical other than that of thioxanthonetetracarboxylic acid, the carboxyl groups thereof in each case being located in pairs in the ortho-position or peri-position relative to one another, and Xa is a divalent aromatic diamine radical which, in at least one ortho-position relative to at least one nitrogen atom, carries a hydrocarbon substituent having at least one aliphatic .alpha.-hydrogen atom or Xa is a radical of the formula III
(III), in which Xc is a divalent aromatic diamine radical which, in ortho-position relative to the two nitrogen atoms, carries in each case at least one monovalent hydrocarbon substituent having at least one alipha-tic .alpha.-hydrogen atom, and ? assumes an average value of 1.0 to 2.5, Zb is as defined for Za and Xb is an aliphatic, cycloaliphatic, aroma-tic or araliphatic diamine radical, excluding a radical of the formula III, with the proviso that the proportion of radicals of the formula III
in the formula I is selected such that the quantity of thioxanthone-tetracarboxylic acid radicals, relative to the total quantity of tetra-carboxylic acid units in the copolyimide, is between 1 and 30 mol %.
(I), (II), in which Za is a tetravalent aromatic tetracarboxylic acid radical other than that of thioxanthonetetracarboxylic acid, the carboxyl groups thereof in each case being located in pairs in the ortho-position or peri-position relative to one another, and Xa is a divalent aromatic diamine radical which, in at least one ortho-position relative to at least one nitrogen atom, carries a hydrocarbon substituent having at least one aliphatic .alpha.-hydrogen atom or Xa is a radical of the formula III
(III), in which Xc is a divalent aromatic diamine radical which, in ortho-position relative to the two nitrogen atoms, carries in each case at least one monovalent hydrocarbon substituent having at least one alipha-tic .alpha.-hydrogen atom, and ? assumes an average value of 1.0 to 2.5, Zb is as defined for Za and Xb is an aliphatic, cycloaliphatic, aroma-tic or araliphatic diamine radical, excluding a radical of the formula III, with the proviso that the proportion of radicals of the formula III
in the formula I is selected such that the quantity of thioxanthone-tetracarboxylic acid radicals, relative to the total quantity of tetra-carboxylic acid units in the copolyimide, is between 1 and 30 mol %.
2. A copolyimide according to claim 1, wherein Za and Zb are radicals of the formulae IV and/or IX
(IV), (IX), in which the free bonds are in each case located in pairs in the ortho-position relative to one another, R1 is a group of the formulae -S-, -SO2-, -NR2-, -SiR3R4-, -SiR3R4-O-SiR3R4-, -O-R5-SiR3R4-R5-O-, -CO-, -O-, -CH2-, -C(CH3)2- or -C(CF3)2-, R2 is hydrogen or C1-C6alkyl, R3 and R4 indepen-dently of one another are C1-C6alkyl, C1-C6perfluoroalkyl, C1-C6alkoxy or C1-C6perfluoroalkoxy and R5 is alkylene.
(IV), (IX), in which the free bonds are in each case located in pairs in the ortho-position relative to one another, R1 is a group of the formulae -S-, -SO2-, -NR2-, -SiR3R4-, -SiR3R4-O-SiR3R4-, -O-R5-SiR3R4-R5-O-, -CO-, -O-, -CH2-, -C(CH3)2- or -C(CF3)2-, R2 is hydrogen or C1-C6alkyl, R3 and R4 indepen-dently of one another are C1-C6alkyl, C1-C6perfluoroalkyl, C1-C6alkoxy or C1-C6perfluoroalkoxy and R5 is alkylene.
3. A copolyimide according to claim 2, wherein Za and Zb are radicals of the formulae IV and/or IX and R1 is -CO-, -O-, -CH2-, -C(CH3)2- or -C(CF3)2-.
4. A copolyimide according to claim 1, wherein the proportion of thio-xanthone radicals is 5.0 to 15 mol %, relative to the total quantity of tetracarboxylic acid units in the copolyimide.
5. A copolyimide according to claim 1, wherein n assumes an average value from 1.0 to 1.5.
6. A copolyimide according to claim 1, wherein all the radicals Xa other than those of the formula III are divalent radicals of an aromatic dia-mine which carries in each case at least one monovalent hydrocarbon radical having aliphatic .alpha.-hydrogen atoms in ortho-position relative to the two nitrogen atoms, and wherein the radicals Xc in formula III
are derived from aromatic diamines in which each of the two ortho-positions relative to both nitrogen atoms carry monovalent hydrocarbon radicals having aliphatic .alpha.-hydrogen atoms.
are derived from aromatic diamines in which each of the two ortho-positions relative to both nitrogen atoms carry monovalent hydrocarbon radicals having aliphatic .alpha.-hydrogen atoms.
7. A copolyimide according to claim 6, wherein all the radicals Xa other than those of the formula III are derived from aromatic diamines in which both ortho-positions relative to both nitrogen atoms carry in each case monovalent hydrocarbon radicals having aliphatic .alpha.-hydrogen atoms.
8. A copolyimide according to claim 6, wherein Xb is a siloxane-modified alkylene radical.
9. A copolyimide according to claim 7, wherein Xc and all the radicals Xa other than those of the formula III are groups of the formulae XV
to XVIII
(XV), (XVI), (XVII), (XVIII), in which Z is a direct bond or -O-, -CH2- or -C(CF3)2-, and R6 and R7 independently of one another are C1-C6alkyl.
to XVIII
(XV), (XVI), (XVII), (XVIII), in which Z is a direct bond or -O-, -CH2- or -C(CF3)2-, and R6 and R7 independently of one another are C1-C6alkyl.
10. A copolyimide consisting of recurring structural units or the formula I according to claim 1, wherein all the radicals Xc and the radicals Xa other than those of the formula III are derived from aromatic diamines in which both ortho-positions relative to the two nitrogen atoms carry in each case monovalent hydrocarbon radicals having aliphatic .alpha.-hydrogen atoms.
11. A process for the preparation of a copolyimide according to claim 1 comprising the preparation of a precondensate of the formula XXV and, if desired, separating the latter into its components which are isolated (XXV), by polycondensing a compound of the formula XX or one of its polyimide-forming derivatives with an excess of a diamine of the formula XXIII in a manner known per se (XX), (XXIII), and subsequently polycondensing said precondensate with the remaining tetracarboxylic acid components and, if appropriate, diamine components of the formulae XIX, XXVI and XXVII in a manner known per se (XIX), (XXI), H2N-Xf-NH2 (XXVI), H2N-Xb-NH2 (XXVII);
in which ?, Za, Zb, Xb and Xc are as defined in claim 1 and Xf has one of the meanings defined in claim 1 for Xa with the exception of the formula III.
in which ?, Za, Zb, Xb and Xc are as defined in claim 1 and Xf has one of the meanings defined in claim 1 for Xa with the exception of the formula III.
12. A composition containing, as the polyimide components, essentially:
A) a copolyimide or a mixture of copolyimides consisting of 100-70 mol % of recurring structural units of the formula I and 0-30 mol % of recurring structural units of the formula II according to claim 1, the total quantity of thioxanthone radicals in component A), relative to the total quantity of all tetracarboxylic acid radicals in this component, being 2.0 to 40 mol %, or A') a polyimide or a mixture of polyimides consisting of 100-20 mol % of recurring structural units of the formula XXVIII, 0-80 mol % of recurring structural units of the formula XXIX and 0-30 mol % of recurring structural units of the formula XXX
(XXVIII), (XXIX), (XXX), in which Zc can assume one of the meanings defined for Za and Xg, Xh and Xi independently of one another can assume one of the meanings defined for Xc, and B) a polyimide or a mixture of polyimides consisting of 100-80 mol % of recurring structural units of the formula XXXI and of 0-20 mol % of recurring structural units of the formula XXXII
(XXXI), (XXXII), in which Zd and Ze independently of one another can assume one of the meanings defined for Za, Xj can assume one of the meanings defined for Xa with the exception of the formula III and Xk can assume one of the meanings defined for Xb, it being necessary in the case of the A)/B) mixtures that at least 70 mol % of the radicals Zd and, if appropriate, Ze in component B), relative to the total quantity of these radicals, are identical to the radicals Za and, if appropriate, Zb in component A) and at least 70 mol %
of the radicals Xi and, if appropriate, Xk in component B), relative to the total quantity of these radicals are identical to the radicals Xa other than those of the formula III and, if appropriate, to the radicals Xb in component A), or it being necessary that at least 40 mol % of the radicals Xi and, if appropriate, Xk in component B), relative to the total quantity of these radicals, are identical to the radicals Xg and, if appropriate, Xh and xi in component A'), with the proviso that the combination A')/B) is possible in the case where 80-100 mol % of the tetracarboxylic acid radicals of component B) are derived from benzopheno-netetracarboxylic acid and that the combinations A)/B) are possible in all other cases, and that in all combinations A)/B) and A')/B) the quantity of the com-ponents A) or A') is selected such that the quantity of thioxanthonetetra-carboxylic acid radicals, relative to the total quantity of the tetra-carboxylic acid radicals in the polyimide mixture, is between 1.0 and 30 mol %.
A) a copolyimide or a mixture of copolyimides consisting of 100-70 mol % of recurring structural units of the formula I and 0-30 mol % of recurring structural units of the formula II according to claim 1, the total quantity of thioxanthone radicals in component A), relative to the total quantity of all tetracarboxylic acid radicals in this component, being 2.0 to 40 mol %, or A') a polyimide or a mixture of polyimides consisting of 100-20 mol % of recurring structural units of the formula XXVIII, 0-80 mol % of recurring structural units of the formula XXIX and 0-30 mol % of recurring structural units of the formula XXX
(XXVIII), (XXIX), (XXX), in which Zc can assume one of the meanings defined for Za and Xg, Xh and Xi independently of one another can assume one of the meanings defined for Xc, and B) a polyimide or a mixture of polyimides consisting of 100-80 mol % of recurring structural units of the formula XXXI and of 0-20 mol % of recurring structural units of the formula XXXII
(XXXI), (XXXII), in which Zd and Ze independently of one another can assume one of the meanings defined for Za, Xj can assume one of the meanings defined for Xa with the exception of the formula III and Xk can assume one of the meanings defined for Xb, it being necessary in the case of the A)/B) mixtures that at least 70 mol % of the radicals Zd and, if appropriate, Ze in component B), relative to the total quantity of these radicals, are identical to the radicals Za and, if appropriate, Zb in component A) and at least 70 mol %
of the radicals Xi and, if appropriate, Xk in component B), relative to the total quantity of these radicals are identical to the radicals Xa other than those of the formula III and, if appropriate, to the radicals Xb in component A), or it being necessary that at least 40 mol % of the radicals Xi and, if appropriate, Xk in component B), relative to the total quantity of these radicals, are identical to the radicals Xg and, if appropriate, Xh and xi in component A'), with the proviso that the combination A')/B) is possible in the case where 80-100 mol % of the tetracarboxylic acid radicals of component B) are derived from benzopheno-netetracarboxylic acid and that the combinations A)/B) are possible in all other cases, and that in all combinations A)/B) and A')/B) the quantity of the com-ponents A) or A') is selected such that the quantity of thioxanthonetetra-carboxylic acid radicals, relative to the total quantity of the tetra-carboxylic acid radicals in the polyimide mixture, is between 1.0 and 30 mol %.
13. A composition according to claim 12, wherein the quantity of thio-xanthonetetracarboxylic acid radicals, relative to the total quantity of the tetracarboxylic acid radicals in the polyimide mixture, is be-tween 1.0 and 20 mol %.
14. A composition containing components A) and B) according to claim 12, wherein, in component A), the radicals Xa other than those of the formula III and the radicals Xc are substituted by C1-C6alkyl in each of the two ortho-positions relative to both nitrogen atoms, the carbonyl groups in the radical of the formula III are in the 3,3',4,4'-position, ? is an average value from 1.0 to 1.5 and Za and, if appropriate, Zb are radicals of the formula IV or IX according to claim 2, and wherein, in component B), Zd and, if appropriate, Ze are radicals of the formula IV or IX according to claim 2, and Xj is a divalent aromatic diamine radical which is substituted by C1-C6alkyl in at least one orthoposition relative to both nitrogen atoms, at least 80 mol % of the radicals Zd and Ze being identical to the radicals Za and Zb, and at least 80 mol % of the radicals Xj and, if appropriate, Xk being identical to the radicals Xa other than those of the formula III and, if appropriate, to the radicals Xb.
15. A composition according to claim 14, wherein Za and, if appropriate, Zb are radicals of the formula IX in which R1 is -CO-, -O- or -C(CF3)2-and wherein Zd and, if appropriate, Ze are radicals of the formula IX, in which R1 is -O- or -C(CF3)2-.
16. A composition according to claim 12, wherein component A) consists of 100 mol % of recurring structural units of the formula I and component B) consists of 100 mol % of recurring structural units of the formula XXXI and Xj is a divalent aromatic diamine radical which is substituted by C1-C6-alkyl in both ortho-positions relative to each of the two nitrogen atoms.
17. A composition containing components A') and B) according to claim 12, wherein component A') consists of 10-60 mol % of recurring structural units of the formula XXVIII and of 90-40 mol % of recurring structural units of the formula XXIX, a 3,3',4,4'-thioxanthonetetracarboxylic acid radical being present in the formula XXVIII, Zd and Ze are radicals of 3,3',4,4'-benzophenonetetracarboxylic acid and Xg and Xh independently of one another are divalent aromatic diamine radicals which are substituted by C1-C6alkyl in at least one ortho-position relative to both nitrogen atoms, at least 60 mol % of the radicals Xj and, if appropriate, Xk being identical to the radicals Xg and Xh.
18. A composition according to claim 17, wherein component B) consists of 100 mol % of recurring structural units of the formula XXXI and Xg and Xh independently of one another are divalent aromatic diamine radicals which are substituted by C1-C6alkyl in both ortho-positions relative to each of the two nitrogen atoms.
19. A process for the production of protective films or of relief struc-tures, comprising the steps of:
i) coating a carrier material with a copolyimide according to claim 1 or with a composition of polyimides according to claim 12, ii) irradiating the coated material with a pattern of actinic radiation, so that the irradiated areas of said polymer layer are crosslinked, and iii) developing the system with a suitable developer.
i) coating a carrier material with a copolyimide according to claim 1 or with a composition of polyimides according to claim 12, ii) irradiating the coated material with a pattern of actinic radiation, so that the irradiated areas of said polymer layer are crosslinked, and iii) developing the system with a suitable developer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US133,407 | 1971-04-12 | ||
| US13340787A | 1987-12-15 | 1987-12-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1295774C true CA1295774C (en) | 1992-02-11 |
Family
ID=22458474
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000585713A Expired - Lifetime CA1295774C (en) | 1987-12-15 | 1988-12-13 | Auto-photocrosslinkable copolyimides and polyimide compositions |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0321398B1 (en) |
| JP (1) | JP2732101B2 (en) |
| CA (1) | CA1295774C (en) |
| DE (1) | DE3851134D1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2040994A1 (en) * | 1990-05-08 | 1991-11-09 | David D. Ngo | Photoimageable polyimide coating |
| US5427862A (en) * | 1990-05-08 | 1995-06-27 | Amoco Corporation | Photocurable polyimide coated glass fiber |
| US5807498A (en) * | 1996-03-29 | 1998-09-15 | Alliant Techsystems Inc. | Process and materials for aligning liquid crystals and liquid crystal optical elements |
| US6342333B1 (en) * | 1999-09-23 | 2002-01-29 | Hitachi Chemical Dupont Microsystems, L.L.C. | Photosensitive resin composition, patterning method, and electronic components |
| JP7533102B2 (en) * | 2020-10-09 | 2024-08-14 | artience株式会社 | Electronic Materials |
| WO2022270541A1 (en) * | 2021-06-25 | 2022-12-29 | 住友ベークライト株式会社 | Negative photosensitive resin composition, negative photosensitive polymer, cured film, and semiconductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4698295A (en) * | 1984-11-16 | 1987-10-06 | Ciba-Geigy Corporation | Polyimides, a process for their preparation and their use, and tetracarboxylic acids and tetracarboxylic acid derivatives |
| US4786569A (en) * | 1985-09-04 | 1988-11-22 | Ciba-Geigy Corporation | Adhesively bonded photostructurable polyimide film |
| US4847359A (en) * | 1986-06-30 | 1989-07-11 | Ciba-Geigy Corporation | Diamino-9,10-dihydroanthracenes and polyamide acid (esters) and polyimides derived therefrom |
| EP0252883B1 (en) * | 1986-07-08 | 1991-01-16 | Ciba-Geigy Ag | Coated material containing a radiation-sensitive polyimide layer with special diaminodiphenyl methane units |
-
1988
- 1988-12-06 EP EP19880810832 patent/EP0321398B1/en not_active Expired - Lifetime
- 1988-12-06 DE DE3851134T patent/DE3851134D1/en not_active Expired - Fee Related
- 1988-12-13 CA CA000585713A patent/CA1295774C/en not_active Expired - Lifetime
- 1988-12-15 JP JP63317558A patent/JP2732101B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0321398B1 (en) | 1994-08-17 |
| DE3851134D1 (en) | 1994-09-22 |
| EP0321398A3 (en) | 1990-07-25 |
| JP2732101B2 (en) | 1998-03-25 |
| JPH01201334A (en) | 1989-08-14 |
| EP0321398A2 (en) | 1989-06-21 |
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