CA1119448A - Charge transfer imaging with a semiconductor underlying the photo conductive surface - Google Patents
Charge transfer imaging with a semiconductor underlying the photo conductive surfaceInfo
- Publication number
- CA1119448A CA1119448A CA000306521A CA306521A CA1119448A CA 1119448 A CA1119448 A CA 1119448A CA 000306521 A CA000306521 A CA 000306521A CA 306521 A CA306521 A CA 306521A CA 1119448 A CA1119448 A CA 1119448A
- Authority
- CA
- Canada
- Prior art keywords
- accordance
- semiconductor
- photoconductive surface
- image
- electrostatic image
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000003384 imaging method Methods 0.000 title abstract description 6
- 108091008695 photoreceptors Proteins 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000015556 catabolic process Effects 0.000 claims abstract description 13
- 238000006731 degradation reaction Methods 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 11
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 8
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 8
- 108020003175 receptors Proteins 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 7
- 239000006229 carbon black Substances 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 5
- 229920003023 plastic Polymers 0.000 claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 4
- 229920001971 elastomer Polymers 0.000 claims description 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000005060 rubber Substances 0.000 claims description 3
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 239000011669 selenium Substances 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 229910001370 Se alloy Inorganic materials 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 1
- 239000000806 elastomer Substances 0.000 claims 1
- 229920001187 thermosetting polymer Polymers 0.000 claims 1
- 102000005962 receptors Human genes 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- -1 amorphous selenium Chemical compound 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G15/00—Apparatus for electrographic processes using a charge pattern
- G03G15/75—Details relating to xerographic drum, band or plate, e.g. replacing, testing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G15/00—Apparatus for electrographic processes using a charge pattern
- G03G15/14—Apparatus for electrographic processes using a charge pattern for transferring a pattern to a second base
- G03G15/18—Apparatus for electrographic processes using a charge pattern for transferring a pattern to a second base of a charge pattern
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Abstract
ABSTRACT
Charge transfer imaging method and apparatus using a photoreceptor assembly. The assembly, which is formed by the interposition of a semiconducting substrate between a photoreceptor and a conducting base member, is used to transfer an image to a dielectric member with reduced image degradation.
Charge transfer imaging method and apparatus using a photoreceptor assembly. The assembly, which is formed by the interposition of a semiconducting substrate between a photoreceptor and a conducting base member, is used to transfer an image to a dielectric member with reduced image degradation.
Description
This inven-tion relates to charge transfer imaging and more particularly -to charge transfer imaging employing a modified photorecep-tor assembly to provide reduced image breakup during -the transfer process.
In charge transfer electrophotography, a photosensitive material is provided with the electros-tatic counterpart of an image that is to be reproduced. The elec-trostatic image is then transferred to a member possessing a dielectric surface.
Unfortunately, in the ordinary usage of the foregoing charge transfer techni~ue, a disrup-tive image breakup has been often encountered when the charge photosensitive surface has been brought to the vicinity of the carrier surface. This effect is described in detail in Xerography and Relate'd Process, edited by Jo~m H.
Desrauer and Harold E. Clark, the Focal Press, London and New York 1~65 at Page ~3~.
Accordingly the present invention is advantageous in attempting to reduce the extent of image degradation that takes place when a surface with an electrostatic image is brought to the vicinity of a surface to which the electrostatic image is to be transferred.
Still another advantage of the present invention is to modify a conventional photorecep-tor assembly to achieve reduced image degradation in electrophotography and to achieve a modified photoreceptor assembly for use in reducing the extent of image degradation when a charged surface of the photoreceptor assembly is brought to the vicinity of a receptor dielectric surEace.
'['he pres~nt invention provides an electrophotographicrr.ethod oor~
prising the s-teps of charging a photoconductive surface of a photorec~ptor asser~:ly, said photoreceptor asserrbly :Eur-ther including a conducting sl1bstrate, ~ 2 -and a semiconductor with a -thickness of at leas-t 1 mil, in-terposed between the photoconductive surface and the conduc-ting substrate;
exposing the char~ecl pho-toconductive surface -to a pa-ttern represen-ting an original to he reproduce~, whereby the surface is selectively discharged and a latent electrostatic image is produced -thereon;
moving the image bearing portion of said photoconductive surface into the -transfer region of a dielectric member; and transferring the latent electrostatic image to said dielectric member by the ionization of air in a gap between said photoconductive surface and said dielectxic member.
According to another aspect, the present invention provides a method of reducing image degradation during the transfer of an elec-trostatic image -to a receptor which comprises providing a semiconduc-tor underlying a photoconductive surtace from which the transfer is to take place~
In accordance with a further aspect, the present invention also provides an electrophotographic apparatus of the type including a photoreceptor assembly, means for charging a photo~
conductive surface of the photoreceptor assembly, means for exposing the.charged photoconductive surface layer to a pattern representing an original to be reproduced to form a latent electrostatic image thereon, an image receptor, and means for moving the image bearing portion of the photoconductive surEace into the transfer region of t.he image recep-tor, `characterized in that the photoreceptor member comprises: a photoconductive surface; a conducting substrate; and a semiconductor in-terposed between khe photoconductive surface and the conducting substra-te, said semiconductor having a thickness of at least 1 mil.
other aspects of the invention will become apparent af-ter consiclerinc3 several illustrative embodimen-ts taken in conjunction wi-th the drawinys in which FIG. 1 is a perspec-tive view of a schematic charge transfer member employing a photoreceptor assembly in accordance with the invention; and FIG. 2 is a perspec-tive view of an alternative photo-receptor assembly.
Turniny to the drawinys, a schema-tic representation of a charye transfer imaging assemb]y, in accordance with the invention, is outlined in FIG. 1.
In the particular embodiment of FIG. 1, the photorecep-tor assembly 20 is a drum with a photoconductive layer 21 overlying a semiconductor layer 23 on a conducting substrate 25.
In the conven-tional transfer process, the presence of the electric field associated with the charges of the electrostatic image formed on the drum 20 results in image deyradation in the transfer process. The effect of such image degradation is miti~ated in accordance with -the invention by the inclusion of the semiconduc-tor 23 between the conducting substrate 25 and the photoconductor 21.
Other forms of photoreceptor assembly in accordance with the invention can be provided, for example, by the flexible belt 20' o~ FIG. 2 in which a photoconductive layer 21' overlies a semiconductive layer 23' which is in turn positioned on a conductive substrate 25'. In order -to achieve the desired conductive substrate 25' a conductive coatiny may be applied to a plastic ~ilm or the substrate may be a thin metallic foil, for example nickel.
The conclucting substrate 25 of the drum 20 in FIG. 1 is illustratively of aluminum, but any combination of materials which provides the desiréd conductivity may also be employed.
J4~
It has been empirically discovered that the semi-conducting layers 23 and 23' preferably have a thickness in the range from 1 mil to 750 mlls. The reslstivity of the semiconductive layer must be such -that charge will pass through the layer in a reasonable time. ~ccordingly the resis-tivity is advantageously less than 1012 ohm centimeters.
On the other hand the resistivity must be sufficiently high to provide a time constant for smoothing the charge transfer and thus reduce -the degradation of the transfer image as heretofore encountered. The lower level of resistivity for the semiconductive layers 23 and 23' depends on the thickness of the layers, the thick-ness of the superimposed photoconductive layer, and the operating speed. It has been discovered generally that a resistivity of more than 10 ohm centimeters is suitable.
The semiconductive layer may be realized in a variety of ways. It may be formed by a semiconductive plastic or a semi-conductive elastorner. A suitable conducting agent is carbon black, while a suitable matrix for receiving the carbon black is an epoxy resin. Thus the semiconductor layer may be formed by dispersing carbon black in a resin matrix to achieve a resistivity within the range set forth above. Similarly a wide variety of rubbers can be used with carbon black to obtain the desired resistivity.
The photoconductor~may be of the type generally employed in electrostatic imaging. Ma-terials which have been found to function satisfactority with the semiconductive layer 23 or 23 include polyvinylcarbazole complexed with -trini-troEluorenone;
cadmium sulfide disporsed in a variety of binders includiny epoxies, , . . .
silicones and thermoplastics; selenium and selenium alloys, including amorphous selenium, and low fatigue zinc oxide.
~ - 5 -In ~eneral, for binder layer pho-toconductors, the semi-conducting layer may also be formed of the same material as the photoconductor, but with a higher photosensitive element con-centration, -thus a photoconductive layer of cadmium sulfide in epoxy with an 18~ concentration behaves as an insulator in the dark, while the same layer with a 30% cadmium sulfide concentration behaves as a semiconductor in the dark.
With any of the foregoing photoconductive layers, disrupti~e image breakdown of the kind discussed is observed when the la-tent image receptor consists of a dielectric surace contiguous to a conducting surface. The presence of this semiconducting layer 23 or 2~' between the photoconductor 21 or 21' and the substrate 25 or 25', however, significantly reduces degradation due to disruptive breakdown. Although -the phenomenon by which the semiconducting layer eliminates the disruptive breakdown is not completely understood~ it is believed that the time constant introduced by this semicondu~ting layer has the effect of smoothing or reducing the precipitous behaviour otherwise associated with disruptive breakdown.
The teachings of this invention are useful in situations where it is desirable to transfer a latent electrostatic charge image to any dielectric member, for example, an intermediate dielect-ric member which is subsequently toned and the image produced by toning is then transferred to a plain paper copy or a dielectric sheet which is itself toned to produce a copy.
While various aspects of the invention have been set forth by the drawings and the speciication, it is to be understood that the foregoing detailed description is for illustration only and that various changes in parts, as well as -the substitution of equivalent constituents for those shown and described, may be made without ~ - 6 -3~
departincJ from the spiri-t and scope of the invention as set forth in the appended claims.
In charge transfer electrophotography, a photosensitive material is provided with the electros-tatic counterpart of an image that is to be reproduced. The elec-trostatic image is then transferred to a member possessing a dielectric surface.
Unfortunately, in the ordinary usage of the foregoing charge transfer techni~ue, a disrup-tive image breakup has been often encountered when the charge photosensitive surface has been brought to the vicinity of the carrier surface. This effect is described in detail in Xerography and Relate'd Process, edited by Jo~m H.
Desrauer and Harold E. Clark, the Focal Press, London and New York 1~65 at Page ~3~.
Accordingly the present invention is advantageous in attempting to reduce the extent of image degradation that takes place when a surface with an electrostatic image is brought to the vicinity of a surface to which the electrostatic image is to be transferred.
Still another advantage of the present invention is to modify a conventional photorecep-tor assembly to achieve reduced image degradation in electrophotography and to achieve a modified photoreceptor assembly for use in reducing the extent of image degradation when a charged surface of the photoreceptor assembly is brought to the vicinity of a receptor dielectric surEace.
'['he pres~nt invention provides an electrophotographicrr.ethod oor~
prising the s-teps of charging a photoconductive surface of a photorec~ptor asser~:ly, said photoreceptor asserrbly :Eur-ther including a conducting sl1bstrate, ~ 2 -and a semiconductor with a -thickness of at leas-t 1 mil, in-terposed between the photoconductive surface and the conduc-ting substrate;
exposing the char~ecl pho-toconductive surface -to a pa-ttern represen-ting an original to he reproduce~, whereby the surface is selectively discharged and a latent electrostatic image is produced -thereon;
moving the image bearing portion of said photoconductive surface into the -transfer region of a dielectric member; and transferring the latent electrostatic image to said dielectric member by the ionization of air in a gap between said photoconductive surface and said dielectxic member.
According to another aspect, the present invention provides a method of reducing image degradation during the transfer of an elec-trostatic image -to a receptor which comprises providing a semiconduc-tor underlying a photoconductive surtace from which the transfer is to take place~
In accordance with a further aspect, the present invention also provides an electrophotographic apparatus of the type including a photoreceptor assembly, means for charging a photo~
conductive surface of the photoreceptor assembly, means for exposing the.charged photoconductive surface layer to a pattern representing an original to be reproduced to form a latent electrostatic image thereon, an image receptor, and means for moving the image bearing portion of the photoconductive surEace into the transfer region of t.he image recep-tor, `characterized in that the photoreceptor member comprises: a photoconductive surface; a conducting substrate; and a semiconductor in-terposed between khe photoconductive surface and the conducting substra-te, said semiconductor having a thickness of at least 1 mil.
other aspects of the invention will become apparent af-ter consiclerinc3 several illustrative embodimen-ts taken in conjunction wi-th the drawinys in which FIG. 1 is a perspec-tive view of a schematic charge transfer member employing a photoreceptor assembly in accordance with the invention; and FIG. 2 is a perspec-tive view of an alternative photo-receptor assembly.
Turniny to the drawinys, a schema-tic representation of a charye transfer imaging assemb]y, in accordance with the invention, is outlined in FIG. 1.
In the particular embodiment of FIG. 1, the photorecep-tor assembly 20 is a drum with a photoconductive layer 21 overlying a semiconductor layer 23 on a conducting substrate 25.
In the conven-tional transfer process, the presence of the electric field associated with the charges of the electrostatic image formed on the drum 20 results in image deyradation in the transfer process. The effect of such image degradation is miti~ated in accordance with -the invention by the inclusion of the semiconduc-tor 23 between the conducting substrate 25 and the photoconductor 21.
Other forms of photoreceptor assembly in accordance with the invention can be provided, for example, by the flexible belt 20' o~ FIG. 2 in which a photoconductive layer 21' overlies a semiconductive layer 23' which is in turn positioned on a conductive substrate 25'. In order -to achieve the desired conductive substrate 25' a conductive coatiny may be applied to a plastic ~ilm or the substrate may be a thin metallic foil, for example nickel.
The conclucting substrate 25 of the drum 20 in FIG. 1 is illustratively of aluminum, but any combination of materials which provides the desiréd conductivity may also be employed.
J4~
It has been empirically discovered that the semi-conducting layers 23 and 23' preferably have a thickness in the range from 1 mil to 750 mlls. The reslstivity of the semiconductive layer must be such -that charge will pass through the layer in a reasonable time. ~ccordingly the resis-tivity is advantageously less than 1012 ohm centimeters.
On the other hand the resistivity must be sufficiently high to provide a time constant for smoothing the charge transfer and thus reduce -the degradation of the transfer image as heretofore encountered. The lower level of resistivity for the semiconductive layers 23 and 23' depends on the thickness of the layers, the thick-ness of the superimposed photoconductive layer, and the operating speed. It has been discovered generally that a resistivity of more than 10 ohm centimeters is suitable.
The semiconductive layer may be realized in a variety of ways. It may be formed by a semiconductive plastic or a semi-conductive elastorner. A suitable conducting agent is carbon black, while a suitable matrix for receiving the carbon black is an epoxy resin. Thus the semiconductor layer may be formed by dispersing carbon black in a resin matrix to achieve a resistivity within the range set forth above. Similarly a wide variety of rubbers can be used with carbon black to obtain the desired resistivity.
The photoconductor~may be of the type generally employed in electrostatic imaging. Ma-terials which have been found to function satisfactority with the semiconductive layer 23 or 23 include polyvinylcarbazole complexed with -trini-troEluorenone;
cadmium sulfide disporsed in a variety of binders includiny epoxies, , . . .
silicones and thermoplastics; selenium and selenium alloys, including amorphous selenium, and low fatigue zinc oxide.
~ - 5 -In ~eneral, for binder layer pho-toconductors, the semi-conducting layer may also be formed of the same material as the photoconductor, but with a higher photosensitive element con-centration, -thus a photoconductive layer of cadmium sulfide in epoxy with an 18~ concentration behaves as an insulator in the dark, while the same layer with a 30% cadmium sulfide concentration behaves as a semiconductor in the dark.
With any of the foregoing photoconductive layers, disrupti~e image breakdown of the kind discussed is observed when the la-tent image receptor consists of a dielectric surace contiguous to a conducting surface. The presence of this semiconducting layer 23 or 2~' between the photoconductor 21 or 21' and the substrate 25 or 25', however, significantly reduces degradation due to disruptive breakdown. Although -the phenomenon by which the semiconducting layer eliminates the disruptive breakdown is not completely understood~ it is believed that the time constant introduced by this semicondu~ting layer has the effect of smoothing or reducing the precipitous behaviour otherwise associated with disruptive breakdown.
The teachings of this invention are useful in situations where it is desirable to transfer a latent electrostatic charge image to any dielectric member, for example, an intermediate dielect-ric member which is subsequently toned and the image produced by toning is then transferred to a plain paper copy or a dielectric sheet which is itself toned to produce a copy.
While various aspects of the invention have been set forth by the drawings and the speciication, it is to be understood that the foregoing detailed description is for illustration only and that various changes in parts, as well as -the substitution of equivalent constituents for those shown and described, may be made without ~ - 6 -3~
departincJ from the spiri-t and scope of the invention as set forth in the appended claims.
Claims (19)
1. An electrophotographic method comprising the steps of:
charging a photoconductive surface of a photoreceptor assembly, said photoreceptor assembly further including a conducting substrate, and a semiconductor with a thickness of at least 1 mil, interposed between the photoconductive surface and the conducting substrate;
exposing the charged photoconductive surface to a pattern representing an original to be reproduced, whereby the surface is selectively discharged and a latent electrostatic image is produced thereon;
moving the image bearing portion of said photoconductive surface into the transfer region of a dielectric member; and transferring the latent electrostatic image to said dielectric member by the ionization of air in a gap between said photoconductive surface and said dielectric member.
charging a photoconductive surface of a photoreceptor assembly, said photoreceptor assembly further including a conducting substrate, and a semiconductor with a thickness of at least 1 mil, interposed between the photoconductive surface and the conducting substrate;
exposing the charged photoconductive surface to a pattern representing an original to be reproduced, whereby the surface is selectively discharged and a latent electrostatic image is produced thereon;
moving the image bearing portion of said photoconductive surface into the transfer region of a dielectric member; and transferring the latent electrostatic image to said dielectric member by the ionization of air in a gap between said photoconductive surface and said dielectric member.
2. A method in accordance with claim 1 further comprising the step of toning the latent electrostatic image on said dielectric member.
3. A method in accordance with claim 1 wherein the transferring step comprises transferring said image to a dielectric sheet.
4. A method in accordance with claim 1 wherein the transferring step comprises transferring said image to an intermediate dielectric member.
5. A method in accordance with claim 4 further comprising the steps of toning the latent electrostatic image on said intermediate dielectric member, and transferring the toned latent electrostatic image to a plain paper copy.
6. Electrophotographic apparatus of the type including a photoreceptor assembly, means for charging a photoconductive surface of the photoreceptor assembly, means for exposing the charged photoconductive surface layer to a pattern representing an original to be reproduced to form a latent electrostatic image thereon, an image receptor, and means for moving the image bearing portion of the photoconductive surface into the transfer region of the image receptor, characterized in that the photoreceptor member comprises:
a photoconductive surface;
a conducting substrate; and a semiconductor interposed between the photoconductive surface and the conducting substrate, said semiconductor having a thickness of at least 1 mil.
a photoconductive surface;
a conducting substrate; and a semiconductor interposed between the photoconductive surface and the conducting substrate, said semiconductor having a thickness of at least 1 mil.
7. Apparatus in accordance with claim 6 wherein the photoreceptor member further includes a conducting substrate underlying said semiconductor.
8. Apparatus in accordance with claim 6 wherein said semiconductor has a thickness in the range from about 1 mil to about 750 mils.
9. Apparatus in accordance with claim 6 wherein said semiconductor has a thickness of at least 1 mil.
10. Apparatus in accordance with claim 6 wherein said semiconductor has a resistivity between 10 to 3 and 10 to 12 ohm centimeters.
11. Apparatus in accordance with claim 6 wherein said semiconductor is selected from the class comprising semiconductive plastics and semiconductive elastomers.
12. Apparatus in accordance with claim 6 wherein said semiconductor is selected from the class consisting of conductors dispersed in a plastic or rubber matrix.
13. Apparatus in accordance with claim 9 wherein said semiconductor is selected from the class consisting of carbon black dispersed in rubber, carbon black dispersed in an epoxy resin, or cadmium sulfide in a plastic matrix.
14. Apparatus in accordance with claim 6 wherein said semiconductor layer is selected from the class consisting of cadmium sulfide dispersed in a binder, amorphous selenium and selenium alloys, zinc oxide binder layers, and organic photoconductors.
15. Apparatus in accordance with claim 6 wherein said photoconductive surface and said semiconductor are formed with the same matrix.
16. Apparatus in accordance with claim 12 wherein said matrix is a thermoset organic resin.
17. Apparatus in accordance with claim 13 wherein said matrix contains a concentration of cadmium sulfide.
18. Apparatus in accordance with claim 14 wherein the concentration of cadmium sulfide in said semiconductor is about 30 percent and the concentration of cadmium sulfide in said photoconductive surface layer is about 18 percent.
19. The method of reducing image degradation during the transfer of an electrostatic image to a receptor which comprises providing a semiconductor underlying a photoconductive surface from which the transfer is to take place.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US81601277A | 1977-07-15 | 1977-07-15 | |
| US816,012 | 1977-07-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1119448A true CA1119448A (en) | 1982-03-09 |
Family
ID=25219441
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000306521A Expired CA1119448A (en) | 1977-07-15 | 1978-06-29 | Charge transfer imaging with a semiconductor underlying the photo conductive surface |
Country Status (15)
| Country | Link |
|---|---|
| JP (1) | JPS5434837A (en) |
| AU (1) | AU527300B2 (en) |
| BE (1) | BE869000A (en) |
| BR (1) | BR7804532A (en) |
| CA (1) | CA1119448A (en) |
| CH (1) | CH632604A5 (en) |
| DE (1) | DE2830626A1 (en) |
| ES (1) | ES471782A1 (en) |
| FR (1) | FR2397660A1 (en) |
| GB (1) | GB2001181B (en) |
| IT (1) | IT1096901B (en) |
| MX (1) | MX145280A (en) |
| NL (1) | NL7806969A (en) |
| SE (1) | SE438921B (en) |
| ZA (1) | ZA783693B (en) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5033859B2 (en) * | 1972-08-02 | 1975-11-04 | ||
| JPS514109B2 (en) * | 1973-07-27 | 1976-02-09 | ||
| DD110707A1 (en) * | 1973-08-31 | 1975-01-05 | ||
| JPS5754787B2 (en) * | 1973-09-14 | 1982-11-19 | ||
| JPS5072636A (en) * | 1973-10-26 | 1975-06-16 | ||
| US4015985A (en) * | 1975-04-09 | 1977-04-05 | Xerox Corporation | Composite xerographic photoreceptor with injecting contact layer |
| JPS5269632A (en) * | 1975-12-09 | 1977-06-09 | Ricoh Co Ltd | Electrophotographic light sensitive material |
-
1978
- 1978-06-20 SE SE7807033A patent/SE438921B/en not_active IP Right Cessation
- 1978-06-26 AU AU37466/78A patent/AU527300B2/en not_active Expired
- 1978-06-28 ZA ZA00783693A patent/ZA783693B/en unknown
- 1978-06-28 NL NL7806969A patent/NL7806969A/en active Search and Examination
- 1978-06-29 CA CA000306521A patent/CA1119448A/en not_active Expired
- 1978-07-05 IT IT25373/78A patent/IT1096901B/en active
- 1978-07-10 FR FR7820508A patent/FR2397660A1/en active Granted
- 1978-07-12 DE DE19782830626 patent/DE2830626A1/en active Granted
- 1978-07-13 BR BR7804532A patent/BR7804532A/en unknown
- 1978-07-13 JP JP8460478A patent/JPS5434837A/en active Granted
- 1978-07-14 GB GB7829826A patent/GB2001181B/en not_active Expired
- 1978-07-14 CH CH767578A patent/CH632604A5/en not_active IP Right Cessation
- 1978-07-14 MX MX174193A patent/MX145280A/en unknown
- 1978-07-14 BE BE189286A patent/BE869000A/en not_active IP Right Cessation
- 1978-07-15 ES ES471782A patent/ES471782A1/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SE7807033L (en) | 1979-01-16 |
| FR2397660A1 (en) | 1979-02-09 |
| FR2397660B1 (en) | 1984-10-12 |
| BE869000A (en) | 1979-01-15 |
| GB2001181B (en) | 1982-01-27 |
| GB2001181A (en) | 1979-01-24 |
| AU527300B2 (en) | 1983-02-24 |
| DE2830626A1 (en) | 1979-02-01 |
| JPH0154705B2 (en) | 1989-11-20 |
| MX145280A (en) | 1982-01-20 |
| SE438921B (en) | 1985-05-13 |
| DE2830626C2 (en) | 1989-05-18 |
| ES471782A1 (en) | 1979-01-16 |
| NL7806969A (en) | 1979-01-17 |
| AU3746678A (en) | 1980-01-03 |
| IT7825373A0 (en) | 1978-07-05 |
| JPS5434837A (en) | 1979-03-14 |
| BR7804532A (en) | 1979-04-17 |
| CH632604A5 (en) | 1982-10-15 |
| IT1096901B (en) | 1985-08-26 |
| ZA783693B (en) | 1979-06-27 |
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