BRPI1006436A2 - grade de superfície corrugada estreita - Google Patents
grade de superfície corrugada estreitaInfo
- Publication number
- BRPI1006436A2 BRPI1006436A2 BRPI1006436A BRPI1006436A BRPI1006436A2 BR PI1006436 A2 BRPI1006436 A2 BR PI1006436A2 BR PI1006436 A BRPI1006436 A BR PI1006436A BR PI1006436 A BRPI1006436 A BR PI1006436A BR PI1006436 A2 BRPI1006436 A2 BR PI1006436A2
- Authority
- BR
- Brazil
- Prior art keywords
- corrugated surface
- surface grid
- narrow corrugated
- narrow
- grid
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29304—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by diffraction, e.g. grating
- G02B6/29316—Light guides comprising a diffractive element, e.g. grating in or on the light guide such that diffracted light is confined in the light guide
- G02B6/29325—Light guides comprising a diffractive element, e.g. grating in or on the light guide such that diffracted light is confined in the light guide of the slab or planar or plate like form, i.e. confinement in a single transverse dimension only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
- H01S5/1035—Forward coupled structures [DFC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optical Integrated Circuits (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/415,932 US7961765B2 (en) | 2009-03-31 | 2009-03-31 | Narrow surface corrugated grating |
| PCT/US2010/026479 WO2010117527A1 (en) | 2009-03-31 | 2010-03-08 | Narrow surface corrugated grating |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI1006436A2 true BRPI1006436A2 (pt) | 2019-09-24 |
Family
ID=42784186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI1006436A BRPI1006436A2 (pt) | 2009-03-31 | 2010-03-08 | grade de superfície corrugada estreita |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US7961765B2 (pt) |
| EP (1) | EP2414880A4 (pt) |
| JP (1) | JP2012517030A (pt) |
| KR (1) | KR101325334B1 (pt) |
| CN (1) | CN102378933A (pt) |
| BR (1) | BRPI1006436A2 (pt) |
| SG (1) | SG172463A1 (pt) |
| TW (1) | TWI498614B (pt) |
| WO (1) | WO2010117527A1 (pt) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8450186B2 (en) * | 2009-09-25 | 2013-05-28 | Intel Corporation | Optical modulator utilizing wafer bonding technology |
| FR2954638B1 (fr) * | 2009-12-21 | 2012-03-23 | Commissariat Energie Atomique | Laser hybride couple a un guide d'onde |
| FR2977987B1 (fr) * | 2011-07-11 | 2014-02-14 | Commissariat Energie Atomique | Dispositif laser a cavite en forme de boucle apte a etre fonctinalisee |
| JP2013021230A (ja) * | 2011-07-13 | 2013-01-31 | Mitsubishi Electric Corp | 半導体レーザ |
| CN103890624A (zh) * | 2011-10-21 | 2014-06-25 | 惠普发展公司,有限责任合伙企业 | 具有深槽非均匀光栅的光栅耦合器 |
| KR101857160B1 (ko) * | 2011-12-16 | 2018-05-15 | 한국전자통신연구원 | 반도체 레이저 및 그의 제조방법 |
| CN102638000A (zh) * | 2012-04-20 | 2012-08-15 | 中国科学院半导体研究所 | 在硅波导上刻槽制备硅基混合激光器的方法 |
| CN102662218B (zh) * | 2012-05-31 | 2013-10-30 | 东南大学 | 一种皱褶式切趾波导布拉格光栅滤波器及其制备方法 |
| JP5998651B2 (ja) * | 2012-05-31 | 2016-09-28 | 富士通株式会社 | 光送信器 |
| WO2014021813A1 (en) * | 2012-07-30 | 2014-02-06 | Hewlett-Packard Development Company, L.P. | Compact photonic platforms |
| US10209445B2 (en) | 2012-07-30 | 2019-02-19 | Hewlett Packard Enterprise Development Lp | Method of fabricating a compact photonics platform |
| US9509122B1 (en) * | 2012-08-29 | 2016-11-29 | Aurrion, Inc. | Optical cladding layer design |
| CN102882129A (zh) * | 2012-10-25 | 2013-01-16 | 中国科学院半导体研究所 | 改变硅波导宽度制备多波长硅基混合激光器阵列的方法 |
| WO2014066941A1 (en) * | 2012-10-30 | 2014-05-08 | Technological Resources Pty. Limited | An apparatus and a method for treatment of mined material with electromagnetic radiation |
| WO2014133481A1 (en) * | 2013-02-26 | 2014-09-04 | Hewlett-Packard Development Company, L.P. | Multiview 3d telepresence |
| WO2014189599A2 (en) | 2013-03-14 | 2014-11-27 | Massachusetts Institute Of Technology | Photonic devices and methods of using and making photonic devices |
| JP2016526799A (ja) * | 2013-07-03 | 2016-09-05 | カリフォルニア インスティチュート オブ テクノロジー | 高コヒーレンス半導体光源 |
| US9933554B2 (en) | 2013-07-03 | 2018-04-03 | California Institute Of Technology | High-coherence semiconductor light sources |
| US9274275B2 (en) * | 2013-07-03 | 2016-03-01 | Cisco Technology, Inc. | Photonic integration platform |
| CN105794057B (zh) * | 2013-12-27 | 2020-03-06 | 英特尔公司 | 不对称光波导光栅共振器及dbr激光器 |
| JP2015161829A (ja) * | 2014-02-27 | 2015-09-07 | 日本電信電話株式会社 | グレーティングカプラ |
| JP2015161828A (ja) * | 2014-02-27 | 2015-09-07 | 日本電信電話株式会社 | グレーティングカプラ |
| WO2015131270A1 (en) * | 2014-03-07 | 2015-09-11 | Aeponyx Inc. | Methods and system for wavelength tunable optical components and sub-systems |
| JP6224495B2 (ja) | 2014-03-19 | 2017-11-01 | 株式会社東芝 | 半導体レーザ装置 |
| JP6460637B2 (ja) * | 2014-03-31 | 2019-01-30 | 富士通株式会社 | 半導体光導波路装置 |
| CN107710702B (zh) | 2015-03-23 | 2020-09-01 | 艾易珀尼斯公司 | 一种用于在数据中心网络中路由数据的系统 |
| US10281651B2 (en) | 2015-04-10 | 2019-05-07 | Hewlett Packard Enterprise Development Lp | Optical zig-zags |
| US9933576B2 (en) * | 2015-12-29 | 2018-04-03 | Stmicroelectronics (Crolles 2) Sas | Electro-optic device with an optical grating coupler having a grating period variation and methods of formation thereof |
| CN107046229A (zh) * | 2016-02-05 | 2017-08-15 | 南京威宁锐克信息技术有限公司 | 一种激光器阵列的制作方法及激光器阵列 |
| FR3061961B1 (fr) * | 2017-01-19 | 2019-04-19 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif photonique comportant un laser optiquement connecte a un guide d'onde silicium et procede de fabrication d'un tel dispositif photonique |
| WO2019005823A1 (en) * | 2017-06-26 | 2019-01-03 | The Trustees Of Columbia University In The City Of New York | MILLIMETRIC SCALE LENGTH NETWORK COUPLER |
| US10389090B2 (en) * | 2017-11-21 | 2019-08-20 | International Business Machines Corporation | Lateral growth of edge-emitting lasers |
| CN108933382B (zh) * | 2018-06-21 | 2019-12-20 | 武汉光迅科技股份有限公司 | 一种光栅、dbr激光器及光栅制备方法 |
| CN112352177B (zh) * | 2018-07-12 | 2022-06-21 | 三菱电机株式会社 | 光发送设备 |
| DE102018216775B4 (de) * | 2018-09-28 | 2022-01-20 | Robert Bosch Gmbh | Optisches Phasenarray und Verfahren zum Herstellen eines Phasenarrays |
| US11275211B2 (en) * | 2019-06-18 | 2022-03-15 | Cisco Technology, Inc. | Fiber array unit with unfinished endface |
| FR3101442B1 (fr) * | 2019-09-27 | 2022-04-22 | Commissariat Energie Atomique | Miroir de Bragg et procédé de réalisation d’un miroir de Bragg |
| US10983273B1 (en) * | 2020-06-22 | 2021-04-20 | Voyant Photonics, Inc. | Integrated optical waveguide emitter |
| US11585976B2 (en) | 2021-04-01 | 2023-02-21 | Saudi Arabian Oil Company | Optical fiber with corrugations |
| US11555958B2 (en) | 2021-04-01 | 2023-01-17 | Saudi Arabian Oil Company | Nested anti-resonant nodeless optical fiber and subsurface system using the same |
| US11664640B1 (en) * | 2021-08-05 | 2023-05-30 | United States Of America As Represented By The Administrator Of Nasa | Method for integration of variable Bragg grating coupling coefficients |
| IL313346A (en) * | 2021-12-23 | 2024-08-01 | Asml Netherlands Bv | Systems and methods for cleaning electron sources in charged particle beam systems |
| US20230307887A1 (en) * | 2022-03-22 | 2023-09-28 | Nokia Solutions And Networks Oy | Laser Calibration And Recalibration Using Integrated Wavemeter |
| CN119362145B (zh) * | 2024-12-20 | 2025-04-15 | 苏州长光华芯光电技术股份有限公司 | 模式调控半导体发光结构及其制备方法 |
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|---|---|---|---|---|
| JPS5914690A (ja) * | 1982-07-16 | 1984-01-25 | Nec Corp | 半導体レ−ザ |
| US4852960A (en) * | 1987-03-11 | 1989-08-01 | American Telephone And Telegraph Company, At&T Bell Laboratories | Narrow-linewidth resonant optical device, transmitter, system, and method |
| JP2854330B2 (ja) * | 1989-07-14 | 1999-02-03 | キヤノン株式会社 | 波長可変光フィルタ |
| DE4322163A1 (de) * | 1993-07-03 | 1995-01-12 | Ant Nachrichtentech | Auf DFB- oder DBR-Gitter basierendes optoelektronisches Bauelement mit quasi-kontinuierlich axial verteilbarer Brechungsindex-Variation, mit axial beliebig verteilbarer und variierbarer Phasenverschiebung, sowie mit axial quasi-kontinuierlich variierbarem Gitter-Kopplungskoeffizienten |
| US5838870A (en) * | 1997-02-28 | 1998-11-17 | The United States Of America As Represented By The Secretary Of The Air Force | Nanometer-scale silicon-on-insulator photonic componets |
| JP3251191B2 (ja) * | 1997-03-26 | 2002-01-28 | 日本電気株式会社 | 光通信に用いる半導体光素子 |
| US6282219B1 (en) * | 1998-08-12 | 2001-08-28 | Texas Instruments Incorporated | Substrate stack construction for enhanced coupling efficiency of optical couplers |
| JP2001345512A (ja) * | 2000-06-02 | 2001-12-14 | Fujitsu Ltd | 分布帰還型レーザダイオード |
| EP1186916A1 (en) * | 2000-09-06 | 2002-03-13 | Corning Incorporated | Fabrication of gratings in planar waveguide devices |
| JP4786024B2 (ja) * | 2000-11-20 | 2011-10-05 | 三菱電機株式会社 | 分布帰還型レーザおよびその製造方法 |
| US6483863B2 (en) * | 2001-01-19 | 2002-11-19 | The Trustees Of Princeton University | Asymmetric waveguide electroabsorption-modulated laser |
| US6775427B2 (en) * | 2001-03-09 | 2004-08-10 | Photodigm, Inc. | Laterally coupled wave guides |
| KR100488221B1 (ko) * | 2003-09-08 | 2005-05-10 | 주식회사 파이버프로 | 광섬유 브래그 격자 센서 시스템 |
| US7289699B1 (en) * | 2004-04-29 | 2007-10-30 | Northrop Grumman Corporation | Grating apodization technique for diffused optical waveguides |
| JP4444742B2 (ja) * | 2004-07-02 | 2010-03-31 | 日本電信電話株式会社 | 波長可変半導体モード同期レーザ |
| US7508576B2 (en) * | 2005-01-20 | 2009-03-24 | Intel Corporation | Digital signal regeneration, reshaping and wavelength conversion using an optical bistable silicon raman laser |
| WO2007059147A2 (en) * | 2005-11-14 | 2007-05-24 | Applied Materials, Inc. | Semiconductor laser |
| US7257283B1 (en) * | 2006-06-30 | 2007-08-14 | Intel Corporation | Transmitter-receiver with integrated modulator array and hybrid bonded multi-wavelength laser array |
| US20080002929A1 (en) * | 2006-06-30 | 2008-01-03 | Bowers John E | Electrically pumped semiconductor evanescent laser |
| JP4312239B2 (ja) * | 2007-02-16 | 2009-08-12 | 富士通株式会社 | 光素子及びその製造方法 |
| CN100583579C (zh) * | 2008-10-06 | 2010-01-20 | 南京大学 | 单片集成半导体激光器阵列的制造方法及装置 |
-
2009
- 2009-03-31 US US12/415,932 patent/US7961765B2/en not_active Expired - Fee Related
-
2010
- 2010-03-08 WO PCT/US2010/026479 patent/WO2010117527A1/en not_active Ceased
- 2010-03-08 KR KR1020117023174A patent/KR101325334B1/ko not_active Expired - Fee Related
- 2010-03-08 CN CN2010800152697A patent/CN102378933A/zh active Pending
- 2010-03-08 JP JP2011548437A patent/JP2012517030A/ja active Pending
- 2010-03-08 BR BRPI1006436A patent/BRPI1006436A2/pt not_active IP Right Cessation
- 2010-03-08 EP EP10762046.0A patent/EP2414880A4/en not_active Withdrawn
- 2010-03-08 SG SG2011048667A patent/SG172463A1/en unknown
- 2010-03-29 TW TW099109385A patent/TWI498614B/zh not_active IP Right Cessation
-
2011
- 2011-06-14 US US13/160,277 patent/US8223811B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US8223811B2 (en) | 2012-07-17 |
| SG172463A1 (en) | 2011-08-29 |
| TW201044042A (en) | 2010-12-16 |
| TWI498614B (zh) | 2015-09-01 |
| KR20110122764A (ko) | 2011-11-10 |
| US20100246617A1 (en) | 2010-09-30 |
| KR101325334B1 (ko) | 2013-11-08 |
| EP2414880A1 (en) | 2012-02-08 |
| EP2414880A4 (en) | 2017-08-16 |
| JP2012517030A (ja) | 2012-07-26 |
| US20110243496A1 (en) | 2011-10-06 |
| US7961765B2 (en) | 2011-06-14 |
| WO2010117527A1 (en) | 2010-10-14 |
| CN102378933A (zh) | 2012-03-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B08F | Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette] | ||
| B08K | Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette] |
Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2543 DE 01-10-2019 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013. |