BRPI0920797A2 - transistor de película fina, e , dispositivo de exibição - Google Patents
transistor de película fina, e , dispositivo de exibiçãoInfo
- Publication number
- BRPI0920797A2 BRPI0920797A2 BRPI0920797A BRPI0920797A BRPI0920797A2 BR PI0920797 A2 BRPI0920797 A2 BR PI0920797A2 BR PI0920797 A BRPI0920797 A BR PI0920797A BR PI0920797 A BRPI0920797 A BR PI0920797A BR PI0920797 A2 BRPI0920797 A2 BR PI0920797A2
- Authority
- BR
- Brazil
- Prior art keywords
- display device
- thin film
- film transistor
- transistor
- thin
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008261831 | 2008-10-08 | ||
| JP2009107732A JP5552753B2 (ja) | 2008-10-08 | 2009-04-27 | 薄膜トランジスタおよび表示装置 |
| PCT/JP2009/067492 WO2010041686A1 (ja) | 2008-10-08 | 2009-10-07 | 薄膜トランジスタおよび表示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI0920797A2 true BRPI0920797A2 (pt) | 2015-12-22 |
Family
ID=42100634
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0920797A BRPI0920797A2 (pt) | 2008-10-08 | 2009-10-07 | transistor de película fina, e , dispositivo de exibição |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8461594B2 (pt) |
| JP (1) | JP5552753B2 (pt) |
| KR (1) | KR20110069042A (pt) |
| CN (1) | CN102171833A (pt) |
| BR (1) | BRPI0920797A2 (pt) |
| RU (1) | RU2011113550A (pt) |
| TW (1) | TWI429085B (pt) |
| WO (1) | WO2010041686A1 (pt) |
Families Citing this family (114)
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| JP5552753B2 (ja) * | 2008-10-08 | 2014-07-16 | ソニー株式会社 | 薄膜トランジスタおよび表示装置 |
| CN102598283B (zh) * | 2009-09-04 | 2016-05-18 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| CN105789322B (zh) * | 2009-09-16 | 2018-09-28 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| KR102219095B1 (ko) | 2009-09-24 | 2021-02-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
| WO2011043215A1 (en) | 2009-10-09 | 2011-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Shift register and display device and driving method thereof |
| KR102690171B1 (ko) | 2009-11-13 | 2024-08-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| WO2011132625A1 (en) | 2010-04-23 | 2011-10-27 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
| KR101806271B1 (ko) * | 2010-05-14 | 2017-12-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| WO2011145468A1 (en) * | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
| WO2011155125A1 (ja) * | 2010-06-08 | 2011-12-15 | シャープ株式会社 | 薄膜トランジスタ基板及びそれを備えた液晶表示装置並びに薄膜トランジスタ基板の製造方法 |
| US8610180B2 (en) * | 2010-06-11 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Gas sensor and method for manufacturing the gas sensor |
| WO2011155302A1 (en) * | 2010-06-11 | 2011-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2012004371A (ja) * | 2010-06-17 | 2012-01-05 | Sony Corp | 薄膜トランジスタおよび表示装置 |
| WO2011158703A1 (en) * | 2010-06-18 | 2011-12-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US20120001179A1 (en) * | 2010-07-02 | 2012-01-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN107452630B (zh) * | 2010-07-02 | 2020-11-27 | 株式会社半导体能源研究所 | 半导体装置 |
| US8785241B2 (en) * | 2010-07-16 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR101932576B1 (ko) * | 2010-09-13 | 2018-12-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
| TWI405335B (zh) * | 2010-09-13 | 2013-08-11 | Au Optronics Corp | 半導體結構及其製造方法 |
| KR20120037838A (ko) * | 2010-10-12 | 2012-04-20 | 삼성전자주식회사 | 트랜지스터 및 이를 포함하는 전자소자 |
| JP5636867B2 (ja) * | 2010-10-19 | 2014-12-10 | 富士通株式会社 | 半導体装置及び半導体装置の製造方法 |
| JP5668917B2 (ja) | 2010-11-05 | 2015-02-12 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
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| JP5127183B2 (ja) * | 2006-08-23 | 2013-01-23 | キヤノン株式会社 | アモルファス酸化物半導体膜を用いた薄膜トランジスタの製造方法 |
| KR101410926B1 (ko) * | 2007-02-16 | 2014-06-24 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조방법 |
| JP5552753B2 (ja) * | 2008-10-08 | 2014-07-16 | ソニー株式会社 | 薄膜トランジスタおよび表示装置 |
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- 2009-10-07 WO PCT/JP2009/067492 patent/WO2010041686A1/ja not_active Ceased
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| WO2010041686A1 (ja) | 2010-04-15 |
| TWI429085B (zh) | 2014-03-01 |
| US20110180802A1 (en) | 2011-07-28 |
| US8461594B2 (en) | 2013-06-11 |
| CN102171833A (zh) | 2011-08-31 |
| JP2010114413A (ja) | 2010-05-20 |
| KR20110069042A (ko) | 2011-06-22 |
| US20130240878A1 (en) | 2013-09-19 |
| RU2011113550A (ru) | 2012-10-20 |
| JP5552753B2 (ja) | 2014-07-16 |
| TW201025614A (en) | 2010-07-01 |
| US8742418B2 (en) | 2014-06-03 |
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