[go: up one dir, main page]

BRPI0916082A2 - método para formação de um diodo emissor de luz convertido com fósforo (pc - led), diodo emissor de luz convertido com fósforo (pc - led), e, estrutura intermediária de diodo emissor de luz (led) - Google Patents

método para formação de um diodo emissor de luz convertido com fósforo (pc - led), diodo emissor de luz convertido com fósforo (pc - led), e, estrutura intermediária de diodo emissor de luz (led)

Info

Publication number
BRPI0916082A2
BRPI0916082A2 BRPI0916082A BRPI0916082A BRPI0916082A2 BR PI0916082 A2 BRPI0916082 A2 BR PI0916082A2 BR PI0916082 A BRPI0916082 A BR PI0916082A BR PI0916082 A BRPI0916082 A BR PI0916082A BR PI0916082 A2 BRPI0916082 A2 BR PI0916082A2
Authority
BR
Brazil
Prior art keywords
led
phosphorus
converted
forming
intermediate structure
Prior art date
Application number
BRPI0916082A
Other languages
English (en)
Inventor
Jerome C Bhat
Original Assignee
Koninkl Philips Electronics Nv
Philips Lumileds Lichting Company Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Philips Lumileds Lichting Company Llc filed Critical Koninkl Philips Electronics Nv
Publication of BRPI0916082A2 publication Critical patent/BRPI0916082A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8515—Wavelength conversion means not being in contact with the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/001—Profiled members, e.g. beams, sections
    • B29L2031/003—Profiled members, e.g. beams, sections having a profiled transverse cross-section
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29L—INDEXING SCHEME ASSOCIATED WITH SUBCLASS B29C, RELATING TO PARTICULAR ARTICLES
    • B29L2031/00—Other particular articles
    • B29L2031/772—Articles characterised by their shape and not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • H10W72/0198—
    • H10W72/90—
    • H10W72/923—
    • H10W72/9415—
    • H10W72/942—
    • H10W72/952—
    • H10W74/00—
    • H10W90/724—
BRPI0916082A 2008-11-05 2009-10-29 método para formação de um diodo emissor de luz convertido com fósforo (pc - led), diodo emissor de luz convertido com fósforo (pc - led), e, estrutura intermediária de diodo emissor de luz (led) BRPI0916082A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/265,050 US20100109025A1 (en) 2008-11-05 2008-11-05 Over the mold phosphor lens for an led
PCT/IB2009/054808 WO2010052621A1 (en) 2008-11-05 2009-10-29 Overmolded phosphor lens for an led

Publications (1)

Publication Number Publication Date
BRPI0916082A2 true BRPI0916082A2 (pt) 2015-11-10

Family

ID=41580149

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0916082A BRPI0916082A2 (pt) 2008-11-05 2009-10-29 método para formação de um diodo emissor de luz convertido com fósforo (pc - led), diodo emissor de luz convertido com fósforo (pc - led), e, estrutura intermediária de diodo emissor de luz (led)

Country Status (9)

Country Link
US (1) US20100109025A1 (pt)
EP (1) EP2342761A1 (pt)
JP (1) JP2012507847A (pt)
KR (1) KR20110084294A (pt)
CN (1) CN102203965A (pt)
BR (1) BRPI0916082A2 (pt)
RU (1) RU2011122609A (pt)
TW (1) TW201034262A (pt)
WO (1) WO2010052621A1 (pt)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100993317B1 (ko) * 2008-08-26 2010-11-09 삼성전기주식회사 발광 다이오드 패키지의 렌즈 제조방법
WO2010052810A1 (ja) 2008-11-06 2010-05-14 パナソニック株式会社 窒化物系半導体素子およびその製造方法
WO2010116703A1 (ja) * 2009-04-06 2010-10-14 パナソニック株式会社 窒化物系半導体素子およびその製造方法
US20140175377A1 (en) * 2009-04-07 2014-06-26 Soraa, Inc. Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US20120086035A1 (en) * 2009-05-11 2012-04-12 SemiLEDs Optoelectronics Co., Ltd. LED Device With A Light Extracting Rough Structure And Manufacturing Methods Thereof
TW201041192A (en) * 2009-05-11 2010-11-16 Semi Photonics Co Ltd LED device with a roughened light extraction structure and manufacturing methods thereof
US8434883B2 (en) 2009-05-11 2013-05-07 SemiOptoelectronics Co., Ltd. LLB bulb having light extracting rough surface pattern (LERSP) and method of fabrication
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
DE112010003715T8 (de) * 2009-09-20 2013-01-31 Viagan Ltd. Baugruppenbildung von elektronischen Bauelementen auf Waferebene
WO2011077704A1 (ja) * 2009-12-25 2011-06-30 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP5426484B2 (ja) 2010-06-07 2014-02-26 株式会社東芝 半導体発光装置の製造方法
JP5462078B2 (ja) * 2010-06-07 2014-04-02 株式会社東芝 半導体発光装置及びその製造方法
TW201201419A (en) * 2010-06-29 2012-01-01 Semileds Optoelectronics Co Wafer-type light emitting device having precisely coated wavelength-converting layer
KR101553045B1 (ko) * 2010-07-01 2015-09-16 삼성전자주식회사 발광 입자-고분자 복합체 형성용 조성물, 발광 입자-고분자 복합체 및 이를 포함하는 소자
US9382470B2 (en) 2010-07-01 2016-07-05 Samsung Electronics Co., Ltd. Thiol containing compositions for preparing a composite, polymeric composites prepared therefrom, and articles including the same
JP5767062B2 (ja) * 2010-09-30 2015-08-19 日東電工株式会社 発光ダイオード封止材、および、発光ダイオード装置の製造方法
US9351348B2 (en) * 2010-10-27 2016-05-24 Koninklijke Philips N.V. Laminate support film for fabrication of light emitting devices and method of fabrication
KR101591991B1 (ko) 2010-12-02 2016-02-05 삼성전자주식회사 발광소자 패키지 및 그 제조 방법
TWI441361B (zh) * 2010-12-31 2014-06-11 英特明光能股份有限公司 發光二極體封裝結構及其製造方法
US9048396B2 (en) * 2012-06-11 2015-06-02 Cree, Inc. LED package with encapsulant having planar surfaces
EP3664167B1 (en) 2011-03-25 2021-07-07 Samsung Electronics Co., Ltd. Light emitting diode
DE102011102350A1 (de) * 2011-05-24 2012-11-29 Osram Opto Semiconductors Gmbh Optisches Element, optoelektronisches Bauelement und Verfahren zur Herstellung dieser
US9269878B2 (en) * 2011-05-27 2016-02-23 Lg Innotek Co., Ltd. Light emitting device and light emitting apparatus
JP5887638B2 (ja) * 2011-05-30 2016-03-16 億光電子工業股▲ふん▼有限公司Ｅｖｅｒｌｉｇｈｔ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
KR101771175B1 (ko) * 2011-06-10 2017-09-06 삼성전자주식회사 광전자 소자 및 적층 구조
JP2013084889A (ja) * 2011-09-30 2013-05-09 Toshiba Corp 半導体発光装置及びその製造方法
US9726928B2 (en) 2011-12-09 2017-08-08 Samsung Electronics Co., Ltd. Backlight unit and liquid crystal display including the same
KR101288918B1 (ko) * 2011-12-26 2013-07-24 루미마이크로 주식회사 파장변환층이 형성된 발광소자 제조방법 및 그에 따라 제조된 발광소자
US8907362B2 (en) 2012-01-24 2014-12-09 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
WO2013112435A1 (en) 2012-01-24 2013-08-01 Cooledge Lighting Inc. Light - emitting devices having discrete phosphor chips and fabrication methods
US8896010B2 (en) 2012-01-24 2014-11-25 Cooledge Lighting Inc. Wafer-level flip chip device packages and related methods
JP6203759B2 (ja) * 2012-02-10 2017-09-27 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． Ｌｅｄチップの製造方法
FR2989521B1 (fr) * 2012-04-11 2014-11-28 Waitrony Optoelectronics Ltd Appareil de projection d'image a led
US9761763B2 (en) 2012-12-21 2017-09-12 Soraa, Inc. Dense-luminescent-materials-coated violet LEDs
WO2014108782A1 (en) 2013-01-09 2014-07-17 Koninklijke Philips N.V. Shaped cavity in substrate of a chip scale package led
JP2014175362A (ja) * 2013-03-06 2014-09-22 Toshiba Corp 半導体発光素子及びその製造方法
CN105378949B (zh) * 2013-05-20 2019-01-18 亮锐控股有限公司 具有圆顶的芯片级发光器件封装
CN104347785A (zh) * 2013-08-07 2015-02-11 广州众恒光电科技有限公司 一种模具法荧光粉胶层涂覆工艺
US9410664B2 (en) 2013-08-29 2016-08-09 Soraa, Inc. Circadian friendly LED light source
CN104779338A (zh) * 2014-01-15 2015-07-15 展晶科技(深圳)有限公司 发光二极管封装体的制造方法
WO2015119858A1 (en) 2014-02-05 2015-08-13 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
KR102189129B1 (ko) * 2014-06-02 2020-12-09 엘지이노텍 주식회사 발광 소자 모듈
KR102171024B1 (ko) * 2014-06-16 2020-10-29 삼성전자주식회사 반도체 발광소자 패키지의 제조 방법
CN106688115B (zh) 2014-09-12 2019-06-14 世迈克琉明有限公司 半导体发光元件的制造方法
KR101638124B1 (ko) * 2014-10-23 2016-07-11 주식회사 세미콘라이트 반도체 발광소자 및 이의 제조 방법
KR101645329B1 (ko) * 2015-04-29 2016-08-04 루미마이크로 주식회사 형광수지 성형 베이스몰드를 이용하는 발광다이오드 장치 제조방법
WO2016175513A1 (ko) * 2015-04-27 2016-11-03 루미마이크로 주식회사 발광다이오드장치 및 그 제조방법과 이에 사용되는 몰드
US20170338387A1 (en) * 2015-06-30 2017-11-23 Seoul Semiconductor Co., Ltd. Light emitting diode
KR20170003182A (ko) * 2015-06-30 2017-01-09 서울반도체 주식회사 발광 다이오드
DE102016105868A1 (de) * 2016-03-31 2017-10-05 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
CN107437577A (zh) * 2016-05-25 2017-12-05 孔东灿 一种发光二极管芯片的封胶方法
WO2018056788A1 (ko) * 2016-09-26 2018-03-29 주식회사 세미콘라이트 반도체 발광소자 및 이의 제조 방법
KR102831200B1 (ko) * 2017-02-02 2025-07-10 서울반도체 주식회사 발광 다이오드 패키지
US10497845B2 (en) 2017-03-27 2019-12-03 Seoul Semiconductor Co., Ltd. Display apparatus and method of manufacturing the same
WO2018206084A1 (en) * 2017-05-09 2018-11-15 Osram Opto Semiconductors Gmbh Method for fabricating a light emitting semiconductor chip
CN107452851A (zh) * 2017-05-25 2017-12-08 凃中勇 一种发光二极管封装组件及多重色温照明装置
CN107146838B (zh) * 2017-07-05 2019-02-26 深圳市彩立德照明光电科技有限公司 一种led器件的封装工艺及led器件
US10559727B2 (en) 2017-07-25 2020-02-11 Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Manufacturing method of colorful Micro-LED, display modlue and terminals
CN107437531A (zh) * 2017-07-25 2017-12-05 深圳市华星光电半导体显示技术有限公司 制作彩色Micro‑LED的方法、显示模组及终端
TWI705585B (zh) * 2017-09-25 2020-09-21 致伸科技股份有限公司 光源模組
KR102696416B1 (ko) * 2018-12-05 2024-08-16 엘지디스플레이 주식회사 전계발광 표시장치
US20220365293A1 (en) * 2019-11-06 2022-11-17 Mellanox Technologies Ltd. Integrated accurate molded lens on surface emitting/absorbing electro-optical device
US11032976B1 (en) 2020-03-16 2021-06-15 Hgci, Inc. Light fixture for indoor grow application and components thereof
USD933881S1 (en) 2020-03-16 2021-10-19 Hgci, Inc. Light fixture having heat sink
USD933872S1 (en) 2020-03-16 2021-10-19 Hgci, Inc. Light fixture
US12055774B2 (en) * 2021-10-04 2024-08-06 Mellanox Technologies, Ltd. Self-aligned integrated lens on pillar

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3593055A (en) * 1969-04-16 1971-07-13 Bell Telephone Labor Inc Electro-luminescent device
WO1997050132A1 (de) * 1996-06-26 1997-12-31 Siemens Aktiengesellschaft Lichtabstrahlendes halbleiterbauelement mit lumineszenzkonversionselement
DE19638667C2 (de) * 1996-09-20 2001-05-17 Osram Opto Semiconductors Gmbh Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement
TW383508B (en) * 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
US5966393A (en) * 1996-12-13 1999-10-12 The Regents Of The University Of California Hybrid light-emitting sources for efficient and cost effective white lighting and for full-color applications
US5962971A (en) * 1997-08-29 1999-10-05 Chen; Hsing LED structure with ultraviolet-light emission chip and multilayered resins to generate various colored lights
US6469322B1 (en) * 1998-02-06 2002-10-22 General Electric Company Green emitting phosphor for use in UV light emitting diodes
US5959316A (en) * 1998-09-01 1999-09-28 Hewlett-Packard Company Multiple encapsulation of phosphor-LED devices
WO2000019546A1 (en) * 1998-09-28 2000-04-06 Koninklijke Philips Electronics N.V. Lighting system
US6429583B1 (en) * 1998-11-30 2002-08-06 General Electric Company Light emitting device with ba2mgsi2o7:eu2+, ba2sio4:eu2+, or (srxcay ba1-x-y)(a1zga1-z)2sr:eu2+phosphors
US6351069B1 (en) * 1999-02-18 2002-02-26 Lumileds Lighting, U.S., Llc Red-deficiency-compensating phosphor LED
US6680569B2 (en) * 1999-02-18 2004-01-20 Lumileds Lighting U.S. Llc Red-deficiency compensating phosphor light emitting device
TW455908B (en) * 1999-04-20 2001-09-21 Koninkl Philips Electronics Nv Lighting system
US6504301B1 (en) * 1999-09-03 2003-01-07 Lumileds Lighting, U.S., Llc Non-incandescent lightbulb package using light emitting diodes
EP1104799A1 (en) * 1999-11-30 2001-06-06 Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH Red emitting luminescent material
JP3910171B2 (ja) * 2003-02-18 2007-04-25 シャープ株式会社 半導体発光装置、その製造方法および電子撮像装置
US7250715B2 (en) * 2004-02-23 2007-07-31 Philips Lumileds Lighting Company, Llc Wavelength converted semiconductor light emitting devices
US7344902B2 (en) * 2004-11-15 2008-03-18 Philips Lumileds Lighting Company, Llc Overmolded lens over LED die
US7858408B2 (en) * 2004-11-15 2010-12-28 Koninklijke Philips Electronics N.V. LED with phosphor tile and overmolded phosphor in lens
US7352011B2 (en) * 2004-11-15 2008-04-01 Philips Lumileds Lighting Company, Llc Wide emitting lens for LED useful for backlighting
JP2007273562A (ja) * 2006-03-30 2007-10-18 Toshiba Corp 半導体発光装置
JP2008115407A (ja) * 2006-10-31 2008-05-22 Fujimi Inc 溶射用粉末及び溶射皮膜の形成方法
KR100930171B1 (ko) * 2006-12-05 2009-12-07 삼성전기주식회사 백색 발광장치 및 이를 이용한 백색 광원 모듈

Also Published As

Publication number Publication date
WO2010052621A1 (en) 2010-05-14
TW201034262A (en) 2010-09-16
EP2342761A1 (en) 2011-07-13
RU2011122609A (ru) 2012-12-20
US20100109025A1 (en) 2010-05-06
JP2012507847A (ja) 2012-03-29
CN102203965A (zh) 2011-09-28
KR20110084294A (ko) 2011-07-21

Similar Documents

Publication Publication Date Title
BRPI0916082A2 (pt) método para formação de um diodo emissor de luz convertido com fósforo (pc - led), diodo emissor de luz convertido com fósforo (pc - led), e, estrutura intermediária de diodo emissor de luz (led)
BRPI0916184A8 (pt) método para a formação de um equipamento de iluminação e equipamento de iluminação
BRPI0919116A2 (pt) método
BRPI0814359A2 (pt) Método
BRPI0817226A2 (pt) Método
BRPI0817726A2 (pt) Método
BRPI0908192A2 (pt) Dispositivo funcional, e, método para produzir um dispositivo funcional
EP2256030A4 (en) AIRCRAFT ASSEMBLY
BRPI0814501A2 (pt) Método para fabricar uma estrutura de diodo emissor de luz
BRPI0916787A2 (pt) artigo, e, método para fabricar um artigo
DK2313489T3 (da) Fremstillingsmetode
BRPI0922490A2 (pt) Método para produção de beta-santaleno
BRPI1008304A2 (pt) pistão, e, método para construir um pistão
BRPI0813858A2 (pt) Método para produzir peptídeo
BRPI0812741A2 (pt) Método para separação de glóbulos
BRPI0823031A2 (pt) Conjunto, e , método para fabricar um conjunto
BRPI0912903A2 (pt) processo contínuo para a extração de poliamida - 6
BRPI0810416A2 (pt) Método de hidroformação
BRPI0916597A2 (pt) Método
BRPI0923370A2 (pt) Método para produção de titanossilicato
BRPI0918744A2 (pt) Metodo para produção de açúcar
BRPI0915125A2 (pt) método de seleção ii
BRPI0908166A2 (pt) Processos para obter um composto e para a fabricação de um composto, e, composto
ES2451508T8 (es) Proceso de acervación múltiple simultánea
BRPI0811533A2 (pt) Método para a produção de um vírus

Legal Events

Date Code Title Description
B11A Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing
B11Y Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette]