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BRPI0821501A2 - Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio. - Google Patents

Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio.

Info

Publication number
BRPI0821501A2
BRPI0821501A2 BRPI0821501-4A BRPI0821501A BRPI0821501A2 BR PI0821501 A2 BRPI0821501 A2 BR PI0821501A2 BR PI0821501 A BRPI0821501 A BR PI0821501A BR PI0821501 A2 BRPI0821501 A2 BR PI0821501A2
Authority
BR
Brazil
Prior art keywords
copper
preparation
thin film
light
solar cell
Prior art date
Application number
BRPI0821501-4A
Other languages
English (en)
Inventor
Fuqiang Huang
Yaoming Wang
Original Assignee
Shanghai Inst Ceramics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shanghai Inst Ceramics filed Critical Shanghai Inst Ceramics
Publication of BRPI0821501A2 publication Critical patent/BRPI0821501A2/pt
Publication of BRPI0821501B1 publication Critical patent/BRPI0821501B1/pt
Publication of BRPI0821501B8 publication Critical patent/BRPI0821501B8/pt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H10F71/1272—The active layers comprising only Group III-V materials, e.g. GaAs or InP comprising at least three elements, e.g. GaAlAs or InGaAsP
    • H10P14/265—
    • H10P14/3436—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
BRPI0821501A 2007-12-29 2008-12-29 Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio. BRPI0821501B8 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CN200710173785.2 2007-12-29
CNA2007101737852A CN101471394A (zh) 2007-12-29 2007-12-29 铜铟镓硫硒薄膜太阳电池光吸收层的制备方法
PCT/CN2008/073805 WO2009089754A1 (en) 2007-12-29 2008-12-29 Preparation method of light absorption layer of copper-indium-gallium-sulfur-selenium film solar cell

Publications (3)

Publication Number Publication Date
BRPI0821501A2 true BRPI0821501A2 (pt) 2015-06-16
BRPI0821501B1 BRPI0821501B1 (pt) 2019-02-12
BRPI0821501B8 BRPI0821501B8 (pt) 2022-08-23

Family

ID=40828635

Family Applications (1)

Application Number Title Priority Date Filing Date
BRPI0821501A BRPI0821501B8 (pt) 2007-12-29 2008-12-29 Método para preparação de uma camada de absorção leve de célula solar de filme fino de cobre-índio-gálio-enxofre-selênio.

Country Status (8)

Country Link
US (1) US9735297B2 (pt)
EP (1) EP2234168A4 (pt)
JP (1) JP5646342B2 (pt)
KR (1) KR101633388B1 (pt)
CN (2) CN101471394A (pt)
BR (1) BRPI0821501B8 (pt)
RU (1) RU2446510C1 (pt)
WO (1) WO2009089754A1 (pt)

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JP2011508439A (ja) 2011-03-10
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US9735297B2 (en) 2017-08-15
BRPI0821501B8 (pt) 2022-08-23
CN101960610B (zh) 2012-04-11
EP2234168A1 (en) 2010-09-29
CN101960610A (zh) 2011-01-26
KR20100099753A (ko) 2010-09-13
JP5646342B2 (ja) 2014-12-24
RU2446510C1 (ru) 2012-03-27
RU2010131761A (ru) 2012-02-10
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US20110008927A1 (en) 2011-01-13

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