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BR9910491A - Transistor mos de potência - Google Patents

Transistor mos de potência

Info

Publication number
BR9910491A
BR9910491A BR9910491-1A BR9910491A BR9910491A BR 9910491 A BR9910491 A BR 9910491A BR 9910491 A BR9910491 A BR 9910491A BR 9910491 A BR9910491 A BR 9910491A
Authority
BR
Brazil
Prior art keywords
transistor
pmt
temperature
power
chip
Prior art date
Application number
BR9910491-1A
Other languages
English (en)
Inventor
Walter Hersel
Reinhold Weible
Wolfram Breitling
Rolf Falliano
Original Assignee
Fahrzeugklimaregelung Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fahrzeugklimaregelung Gmbh filed Critical Fahrzeugklimaregelung Gmbh
Publication of BR9910491A publication Critical patent/BR9910491A/pt

Links

Classifications

    • H10W40/00—

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)

Abstract

Patente de Invenção: <B>"TRANSISTOR MOS DE POTêNCIA"<D> A invenção refere-se a um transistor MOS de potência (transistor de semicondutor de óxido de metal de potência) com um chip PMT alojada em uma caixa de transistor no qual é monitorizada a temperatura da camada dielétrica do transistor. A proteção do chips PMT contra sobrecarga e destruição é garantida sem prejuízo de sua função de comutação pelo fato de que na caixa do transistor (GH) é previsto um circuito de proteção que mede a temperatura da camada de rasto do transistor com um elemento de medição de temperatura (TM) e, ao alcançar uma temperatura da camada dielétrica predeterminada ou predeterminável diminui a corrente de drenagem, e com isso, a potência dissipada do chips PMT (PMT), sendo que o elemento de medição de temperatura (TM) é integrado no chip PMT (PMT) ou alojado com o circuito de proteção do chip adicional na caixa do transistor (GH).
BR9910491-1A 1998-05-15 1999-05-07 Transistor mos de potência BR9910491A (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19821834A DE19821834A1 (de) 1998-05-15 1998-05-15 Power-Mos-Transistor
PCT/DE1999/001378 WO1999060628A1 (de) 1998-05-15 1999-05-07 Power-mos-transistor mit temperaturschutzschaltung

Publications (1)

Publication Number Publication Date
BR9910491A true BR9910491A (pt) 2001-01-09

Family

ID=7867880

Family Applications (1)

Application Number Title Priority Date Filing Date
BR9910491-1A BR9910491A (pt) 1998-05-15 1999-05-07 Transistor mos de potência

Country Status (7)

Country Link
US (1) US6671152B1 (pt)
EP (1) EP1078401B1 (pt)
JP (1) JP2002516489A (pt)
BR (1) BR9910491A (pt)
DE (2) DE19821834A1 (pt)
ES (1) ES2349496T3 (pt)
WO (1) WO1999060628A1 (pt)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4872176B2 (ja) * 2001-08-29 2012-02-08 株式会社デンソー 接合型ｆｅｔの駆動回路
US7296247B1 (en) * 2004-08-17 2007-11-13 Xilinx, Inc. Method and apparatus to improve pass transistor performance
WO2006068082A1 (ja) * 2004-12-22 2006-06-29 Mitsubishi Denki Kabushiki Kaisha 半導体装置
US7332358B2 (en) * 2005-06-30 2008-02-19 Potentia Semiconductor Inc. MOSFET temperature sensing
US7411436B2 (en) * 2006-02-28 2008-08-12 Cornell Research Foundation, Inc. Self-timed thermally-aware circuits and methods of use thereof
CA2655224A1 (en) * 2006-07-07 2008-01-10 Abb Research Ltd Circuit arrangement for electrically controlling power and cooling arrangement
CN101650253B (zh) * 2009-09-02 2011-03-30 四川电力试验研究院 具有强光保护功能的旋转式激光成像仪
CN101650254B (zh) * 2009-09-02 2012-05-30 四川电力试验研究院 具有强光保护功能的激光成像仪
JP5499792B2 (ja) * 2010-03-12 2014-05-21 オムロン株式会社 センサ用出力集積回路およびセンサ装置
US8442712B2 (en) * 2011-08-31 2013-05-14 Caterpillar Inc. System and method to thermally protect a transistor in an electric drive vehicle
WO2013037417A1 (de) 2011-09-16 2013-03-21 Siemens Aktiengesellschaft Vorrichtung und verfahren zum schutz eines verbrauchers
US9263877B1 (en) * 2014-12-30 2016-02-16 Api Technologies Corp. Temperature-compensated current monitoring
TW201721832A (zh) 2015-12-10 2017-06-16 力智電子股份有限公司 具熱感測功能的功率金氧半電晶體晶粒以及積體電路
KR101785417B1 (ko) 2016-04-25 2017-10-16 이상훈 웨이퍼 레벨에서 온도 및 알에프 특성 모니터링이 가능한 알에프 파워 소자
WO2019017504A1 (ko) * 2017-07-18 2019-01-24 이상훈 웨이퍼 레벨에서 온도 및 알에프 특성 모니터링이 가능한 알에프 파워 소자
CN113140527A (zh) * 2021-04-15 2021-07-20 哈尔滨工业大学 可实时精准监测温度和射频特性的功率器件及其封装方法
JP7511713B1 (ja) 2023-05-24 2024-07-05 昭憲 春木 トランジスタ回路及び電力変換回路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6447077A (en) * 1987-08-18 1989-02-21 Tdk Corp Protective circuit for power mos field-effect transistor
US5025298A (en) 1989-08-22 1991-06-18 Motorola, Inc. Semiconductor structure with closely coupled substrate temperature sense element
US5063307A (en) * 1990-09-20 1991-11-05 Ixys Corporation Insulated gate transistor devices with temperature and current sensor
US5304837A (en) 1992-01-08 1994-04-19 Siemens Aktiengesellschaft Monolithically integrated temperature sensor for power semiconductor components
EP0565807A1 (en) * 1992-04-17 1993-10-20 STMicroelectronics S.r.l. MOS power transistor device
DE4236333A1 (de) * 1992-10-28 1994-05-05 Bosch Gmbh Robert Monolithich integriertes MOS-Endstufenbauteil mit einer Übertemperatur-Schutzeinrichtung
DE4305038C2 (de) 1993-02-18 1998-02-05 Siemens Ag MOSFET mit Temperaturschutz
GB9513420D0 (en) 1995-06-30 1995-09-06 Philips Electronics Uk Ltd Power semiconductor devices
US5949121A (en) * 1996-08-02 1999-09-07 Motorola Inc. Temperature-indicating field effect transistor

Also Published As

Publication number Publication date
EP1078401A1 (de) 2001-02-28
DE19821834A1 (de) 1999-11-25
WO1999060628A1 (de) 1999-11-25
DE59915191D1 (de) 2010-09-16
EP1078401B1 (de) 2010-08-04
JP2002516489A (ja) 2002-06-04
ES2349496T3 (es) 2011-01-04
US6671152B1 (en) 2003-12-30

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Legal Events

Date Code Title Description
B08F Application dismissed because of non-payment of annual fees [chapter 8.6 patent gazette]

Free format text: REFERENTE A 7A, 8A E 9A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: REFERENTE AO DESPACHO PUBLICADO NA RPI 1962 DE 12/08/2008.