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BR9000734A - Sensor semicondutor capacitivo para detecao de pressao e semelhantes,e processo de linearizar a saida de frequencia de um tal sensor - Google Patents

Sensor semicondutor capacitivo para detecao de pressao e semelhantes,e processo de linearizar a saida de frequencia de um tal sensor

Info

Publication number
BR9000734A
BR9000734A BR909000734A BR9000734A BR9000734A BR 9000734 A BR9000734 A BR 9000734A BR 909000734 A BR909000734 A BR 909000734A BR 9000734 A BR9000734 A BR 9000734A BR 9000734 A BR9000734 A BR 9000734A
Authority
BR
Brazil
Prior art keywords
sensor
similars
linearizing
capacitive
detection
Prior art date
Application number
BR909000734A
Other languages
English (en)
Inventor
Daniel H Grantham
James L Swindal
Original Assignee
United Technologies Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Technologies Corp filed Critical United Technologies Corp
Publication of BR9000734A publication Critical patent/BR9000734A/pt

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
    • G01L9/0072—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance
    • G01L9/0073—Transmitting or indicating the displacement of flexible diaphragms using variations in capacitance using a semiconductive diaphragm
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/12—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of variations in capacitance, i.e. electric circuits therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
BR909000734A 1989-02-28 1990-02-16 Sensor semicondutor capacitivo para detecao de pressao e semelhantes,e processo de linearizar a saida de frequencia de um tal sensor BR9000734A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/317,236 US4998179A (en) 1989-02-28 1989-02-28 Capacitive semiconductive sensor with hinged diaphragm for planar movement

Publications (1)

Publication Number Publication Date
BR9000734A true BR9000734A (pt) 1991-01-22

Family

ID=23232735

Family Applications (1)

Application Number Title Priority Date Filing Date
BR909000734A BR9000734A (pt) 1989-02-28 1990-02-16 Sensor semicondutor capacitivo para detecao de pressao e semelhantes,e processo de linearizar a saida de frequencia de um tal sensor

Country Status (8)

Country Link
US (1) US4998179A (pt)
EP (1) EP0385574B1 (pt)
JP (1) JP2918272B2 (pt)
KR (1) KR0137931B1 (pt)
BR (1) BR9000734A (pt)
CA (1) CA2010803C (pt)
DE (1) DE69007516T2 (pt)
IL (1) IL93540A (pt)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4998179A (en) * 1989-02-28 1991-03-05 United Technologies Corporation Capacitive semiconductive sensor with hinged diaphragm for planar movement
FR2656687B1 (fr) * 1989-12-28 1994-07-22 Vectavib Procede de montage d'une piece mecanique comportant un element sensible definissant, avec un support, un condensateur variable, piece mecanique et outil pour sa mise en óoeuvre.
JP2517467B2 (ja) * 1990-10-05 1996-07-24 山武ハネウエル株式会社 静電容量式圧力センサ
GB9111838D0 (en) * 1991-06-01 1991-07-24 Buttwell Limited Treating biomass material
JP3289196B2 (ja) * 1991-06-27 2002-06-04 ドレッサ・ナガノ、インク 変換器の全非直線性を低減する方法及び変換器の非直線性を低減する方法
US5381299A (en) * 1994-01-28 1995-01-10 United Technologies Corporation Capacitive pressure sensor having a substrate with a curved mesa
US5744725A (en) * 1994-04-18 1998-04-28 Motorola Inc. Capacitive pressure sensor and method of fabricating same
JP2935812B2 (ja) * 1994-07-14 1999-08-16 三井金属鉱業株式会社 車両扉用ストライカー装置およびその製造方法
JP3114570B2 (ja) * 1995-05-26 2000-12-04 オムロン株式会社 静電容量型圧力センサ
WO1998025115A1 (de) * 1996-12-04 1998-06-11 Siemens Aktiengesellschaft Mikromechanisches bauelement zur erfassung von fingerabdrücken
US6058780A (en) * 1997-03-20 2000-05-09 Alliedsignal Inc. Capacitive pressure sensor housing having a ceramic base
US6324914B1 (en) 1997-03-20 2001-12-04 Alliedsignal, Inc. Pressure sensor support base with cavity
US6387318B1 (en) 1997-12-05 2002-05-14 Alliedsignal, Inc. Glass-ceramic pressure sensor support base and its fabrication
US6167761B1 (en) * 1998-03-31 2001-01-02 Hitachi, Ltd. And Hitachi Car Engineering Co., Ltd. Capacitance type pressure sensor with capacitive elements actuated by a diaphragm
DE69922727T2 (de) 1998-03-31 2005-12-15 Hitachi, Ltd. Kapazitiver Druckwandler
JP3567089B2 (ja) * 1998-10-12 2004-09-15 株式会社日立製作所 静電容量式圧力センサ
ATE227423T1 (de) * 1998-12-15 2002-11-15 Fraunhofer Ges Forschung Verfahren zum erzeugen einer mikromechanischen struktur für ein mikro-elektromechanisches element
NO313723B1 (no) * 1999-03-01 2002-11-18 Sintef Sensorelement
AU2001265986A1 (en) 2000-07-26 2002-02-05 Endress & Hauser Gmbh & Co.Kg. Capacitive pressure sensor
DE10036433A1 (de) * 2000-07-26 2002-02-07 Endress Hauser Gmbh Co Kapazitiver Drucksensor
DE10114838A1 (de) * 2001-03-26 2002-10-10 Implex Ag Hearing Technology I Vollständig implantierbares Hörsystem
US7028551B2 (en) * 2004-06-18 2006-04-18 Kavlico Corporation Linearity semi-conductive pressure sensor
FI119785B (fi) 2004-09-23 2009-03-13 Vti Technologies Oy Kapasitiivinen anturi ja menetelmä kapasitiivisen anturin valmistamiseksi
JP2007085837A (ja) * 2005-09-21 2007-04-05 Alps Electric Co Ltd 静電容量型圧力センサ
JP4585426B2 (ja) * 2005-10-31 2010-11-24 アルプス電気株式会社 静電容量型圧力センサ
KR100807193B1 (ko) * 2006-09-08 2008-02-28 한국과학기술원 정전용량형 압력센서의 제조방법 및 이에 의해 제조된정전용량형 압력센서
FR2972659A1 (fr) * 2011-03-18 2012-09-21 Commissariat Energie Atomique Procede de traitement par electroerosion d'une surface d'un element en silicium et plaque de silicium obtenue grace a un tel traitement
JP5995038B2 (ja) * 2011-06-16 2016-09-21 富士電機株式会社 半導体基板および半導体装置
DE102011085332A1 (de) * 2011-10-27 2013-05-02 Continental Teves Ag & Co. Ohg Drucksensor
US10525265B2 (en) * 2014-12-09 2020-01-07 Cochlear Limited Impulse noise management
DE102015216626A1 (de) * 2015-08-31 2017-03-02 Siemens Aktiengesellschaft Drucksensoranordnung sowie Messumformer zur Prozessinstrumentierung mit einer derartigen Drucksensoranordnung
JP6041033B2 (ja) * 2015-10-23 2016-12-07 富士電機株式会社 半導体基板の製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5516228A (en) * 1978-07-21 1980-02-04 Hitachi Ltd Capacity type sensor
JPS5838732B2 (ja) * 1978-11-02 1983-08-25 富士電機株式会社 圧力測定用ダイアフラム
US4405970A (en) * 1981-10-13 1983-09-20 United Technologies Corporation Silicon-glass-silicon capacitive pressure transducer
US4415948A (en) * 1981-10-13 1983-11-15 United Technologies Corporation Electrostatic bonded, silicon capacitive pressure transducer
FI75426C (fi) * 1984-10-11 1988-06-09 Vaisala Oy Absoluttryckgivare.
US4586109A (en) * 1985-04-01 1986-04-29 Bourns Instruments, Inc. Batch-process silicon capacitive pressure sensor
JPS62127637A (ja) * 1985-11-28 1987-06-09 Yokogawa Electric Corp 半導体圧力変換器
US4998179A (en) * 1989-02-28 1991-03-05 United Technologies Corporation Capacitive semiconductive sensor with hinged diaphragm for planar movement

Also Published As

Publication number Publication date
DE69007516T2 (de) 1994-08-04
IL93540A0 (en) 1990-11-29
DE69007516D1 (de) 1994-04-28
CA2010803A1 (en) 1990-08-31
EP0385574A1 (en) 1990-09-05
EP0385574B1 (en) 1994-03-23
KR0137931B1 (ko) 1998-05-15
JP2918272B2 (ja) 1999-07-12
JPH0381635A (ja) 1991-04-08
US4998179A (en) 1991-03-05
IL93540A (en) 1993-05-13
KR900013665A (ko) 1990-09-06
CA2010803C (en) 1995-01-24

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Legal Events

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Free format text: INT.CL.6 G01L 9/12

KF Request for proof of payment of annual fee
FD5 Application fees: dismissal - article 86 of industrial property law