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BR8400122A - Modulo semicondutor e embalagem de semicondutor aperfeicoada - Google Patents

Modulo semicondutor e embalagem de semicondutor aperfeicoada

Info

Publication number
BR8400122A
BR8400122A BR8400122A BR8400122A BR8400122A BR 8400122 A BR8400122 A BR 8400122A BR 8400122 A BR8400122 A BR 8400122A BR 8400122 A BR8400122 A BR 8400122A BR 8400122 A BR8400122 A BR 8400122A
Authority
BR
Brazil
Prior art keywords
semiconductor
perfected
module
package
semiconductor package
Prior art date
Application number
BR8400122A
Other languages
English (en)
Inventor
Sydney W Frey
Albert H Berman
Original Assignee
Allen Bradley Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Allen Bradley Co filed Critical Allen Bradley Co
Publication of BR8400122A publication Critical patent/BR8400122A/pt

Links

Classifications

    • H10W40/77—
    • H10W76/136—
    • H10W90/00—
BR8400122A 1983-01-12 1984-01-11 Modulo semicondutor e embalagem de semicondutor aperfeicoada BR8400122A (pt)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US45746883A 1983-01-12 1983-01-12

Publications (1)

Publication Number Publication Date
BR8400122A true BR8400122A (pt) 1984-08-21

Family

ID=23816863

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8400122A BR8400122A (pt) 1983-01-12 1984-01-11 Modulo semicondutor e embalagem de semicondutor aperfeicoada

Country Status (3)

Country Link
EP (1) EP0116289A3 (pt)
JP (1) JPS59175756A (pt)
BR (1) BR8400122A (pt)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112397496A (zh) * 2019-08-19 2021-02-23 尼克森微电子股份有限公司 功率模块

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4965710A (en) * 1989-11-16 1990-10-23 International Rectifier Corporation Insulated gate bipolar transistor power module
US5408128A (en) * 1993-09-15 1995-04-18 International Rectifier Corporation High power semiconductor device module with low thermal resistance and simplified manufacturing
JP3480771B2 (ja) * 1995-12-20 2003-12-22 三菱電機株式会社 半導体装置
JP3923716B2 (ja) * 2000-09-29 2007-06-06 株式会社東芝 半導体装置
EP1324391B1 (en) * 2001-12-24 2007-06-27 Abb Research Ltd. Module housing and power semiconductor module

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1982002980A1 (en) * 1981-02-27 1982-09-02 Inc Motorola High current package with multi-level leads
FR2500959A1 (fr) * 1981-02-27 1982-09-03 Thomson Csf Boitier de dispositif electronique a forte dissipation thermique
FR2503526A1 (fr) * 1981-04-03 1982-10-08 Silicium Semiconducteur Ssc Boitier et procede de montage et d'interconnexion de composants semiconducteurs de moyenne puissance en boitier unique.
FR2527837A1 (fr) * 1982-05-25 1983-12-02 Thomson Csf Boitier d'encapsulation d'un dispositif semi-conducteur fonctionnant a tres haute tension, et son procede de fabrication

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112397496A (zh) * 2019-08-19 2021-02-23 尼克森微电子股份有限公司 功率模块

Also Published As

Publication number Publication date
EP0116289A3 (en) 1987-01-07
EP0116289A2 (en) 1984-08-22
JPS59175756A (ja) 1984-10-04

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