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BR8105748A - PHOTOSENSITIVE AMORFO DEVICE OF MULTIPLE CELLS - Google Patents

PHOTOSENSITIVE AMORFO DEVICE OF MULTIPLE CELLS

Info

Publication number
BR8105748A
BR8105748A BR8105748A BR8105748A BR8105748A BR 8105748 A BR8105748 A BR 8105748A BR 8105748 A BR8105748 A BR 8105748A BR 8105748 A BR8105748 A BR 8105748A BR 8105748 A BR8105748 A BR 8105748A
Authority
BR
Brazil
Prior art keywords
amorfo
photosensitive
multiple cells
cells
photosensitive amorfo
Prior art date
Application number
BR8105748A
Other languages
Portuguese (pt)
Inventor
D Adler
S Ovshinsky
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/185,520 external-priority patent/US4342044A/en
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of BR8105748A publication Critical patent/BR8105748A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021Reactive sputtering or evaporation
    • C23C14/0026Activation or excitation of reactive gases outside the coating chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40Crystalline structures
    • H10D62/402Amorphous materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/18Photovoltaic cells having only Schottky potential barriers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/10Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/16Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166Amorphous semiconductors
    • H10F77/1662Amorphous semiconductors including only Group IV materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/548Amorphous silicon PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Element Separation (AREA)
BR8105748A 1980-09-09 1981-09-08 PHOTOSENSITIVE AMORFO DEVICE OF MULTIPLE CELLS BR8105748A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/185,520 US4342044A (en) 1978-03-08 1980-09-09 Method for optimizing photoresponsive amorphous alloys and devices
US20658080A 1980-11-13 1980-11-13

Publications (1)

Publication Number Publication Date
BR8105748A true BR8105748A (en) 1982-05-25

Family

ID=26881212

Family Applications (1)

Application Number Title Priority Date Filing Date
BR8105748A BR8105748A (en) 1980-09-09 1981-09-08 PHOTOSENSITIVE AMORFO DEVICE OF MULTIPLE CELLS

Country Status (14)

Country Link
KR (1) KR890004497B1 (en)
AU (1) AU547646B2 (en)
BR (1) BR8105748A (en)
CA (1) CA1172742A (en)
DE (1) DE3135353A1 (en)
ES (1) ES8302365A1 (en)
FR (1) FR2490013B1 (en)
GB (1) GB2083705B (en)
IE (1) IE52209B1 (en)
IL (1) IL63756A0 (en)
IN (1) IN157288B (en)
IT (1) IT1138583B (en)
NL (1) NL8104138A (en)
SE (1) SE451353B (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58139478A (en) * 1982-02-15 1983-08-18 Agency Of Ind Science & Technol amorphous solar cell
DE3308269A1 (en) * 1983-03-09 1984-09-13 Licentia Patent-Verwaltungs-Gmbh SOLAR CELL
EP0122047B1 (en) * 1983-03-11 1988-06-01 Exxon Research And Engineering Company A multi-layered amorphous semiconductor material
US4598164A (en) * 1983-10-06 1986-07-01 Exxon Research And Engineering Co. Solar cell made from amorphous superlattice material
JPS6177375A (en) * 1984-09-21 1986-04-19 Sharp Corp color sensor
US4638111A (en) * 1985-06-04 1987-01-20 Atlantic Richfield Company Thin film solar cell module
US4713493A (en) * 1985-10-11 1987-12-15 Energy Conversion Devices, Inc. Power generating optical filter
JPS62136885A (en) * 1985-12-11 1987-06-19 Canon Inc Photovoltaic element, its manufacturing method, and its manufacturing device
JPS62136871A (en) * 1985-12-11 1987-06-19 Canon Inc Optical sensor, its manufacturing method and its manufacturing device
JPH0651906B2 (en) * 1985-12-25 1994-07-06 キヤノン株式会社 Deposited film formation method
JPH0647730B2 (en) * 1985-12-25 1994-06-22 キヤノン株式会社 Deposited film formation method
JPH0746729B2 (en) * 1985-12-26 1995-05-17 キヤノン株式会社 Method of manufacturing thin film transistor
JPH0651908B2 (en) * 1985-12-28 1994-07-06 キヤノン株式会社 Method of forming thin film multilayer structure
JP2566914B2 (en) * 1985-12-28 1996-12-25 キヤノン株式会社 Thin film semiconductor device and method of forming the same
EP0248953A1 (en) * 1986-06-10 1987-12-16 The Standard Oil Company Tandem photovoltaic devices
DD292519A5 (en) * 1990-03-13 1991-08-01 �������@������������@��k�� TRANSPARENT PHOTOELECTRIC ELEMENT
NL1000264C2 (en) * 1995-05-01 1996-11-04 Frans Willem Saris Solar cell with multilayer structure of thin films of silicon.
GB0519599D0 (en) * 2005-09-26 2005-11-02 Imp College Innovations Ltd Photovoltaic cells

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4342044A (en) * 1978-03-08 1982-07-27 Energy Conversion Devices, Inc. Method for optimizing photoresponsive amorphous alloys and devices
JPS5513938A (en) 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device and its manufacturing method
FR2490019B1 (en) * 1980-09-09 1985-10-31 Energy Conversion Devices Inc METHOD AND DEVICE FOR INCREASING THE INTERVAL OF BANDS OF PHOTOSENSITIVE AMORPHOUS ALLOYS AND ALLOYS OBTAINED

Also Published As

Publication number Publication date
ES505270A0 (en) 1982-12-16
IT8123829A0 (en) 1981-09-07
GB2083705B (en) 1985-07-03
FR2490013A1 (en) 1982-03-12
IE812065L (en) 1982-03-09
AU7501881A (en) 1982-03-18
KR830008402A (en) 1983-11-18
DE3135353A1 (en) 1982-07-08
IL63756A0 (en) 1981-12-31
SE451353B (en) 1987-09-28
SE8105279L (en) 1982-03-10
KR890004497B1 (en) 1989-11-06
ES8302365A1 (en) 1982-12-16
FR2490013B1 (en) 1985-11-08
IT1138583B (en) 1986-09-17
IN157288B (en) 1986-02-22
AU547646B2 (en) 1985-10-31
GB2083705A (en) 1982-03-24
IE52209B1 (en) 1987-08-05
NL8104138A (en) 1982-04-01
CA1172742A (en) 1984-08-14

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