BE821565A - Procede de fabrication d'un dispositif a semi-conducteur - Google Patents

Procede de fabrication d'un dispositif a semi-conducteur

Info

Publication number: BE821565A
Authority: BE; Belgium
Prior art keywords: manufacturing; semiconductor device; semiconductor
Prior art date: 1973-10-29

Application number

BE149954A

Other languages

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1973-10-29

Filing date

1974-10-28

Publication date

1975-02-17

1974-10-28 Application filed filed Critical

1975-02-17 Publication of BE821565A publication Critical patent/BE821565A/fr

Classifications

- H10P95/00—
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/003—Anneal
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/015—Capping layer
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/113—Nitrides of boron or aluminum or gallium
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/114—Nitrides of silicon
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/145—Shaped junctions

BE149954A 1973-10-29 1974-10-28 Procede de fabrication d'un dispositif a semi-conducteur BE821565A (fr)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US410548A US3880676A (en)	1973-10-29	1973-10-29	Method of making a semiconductor device

Publications (1)

Publication Number	Publication Date
BE821565A true BE821565A (fr)	1975-02-17

Family

ID=23625209

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
BE149954A BE821565A (fr)	1973-10-29	1974-10-28	Procede de fabrication d'un dispositif a semi-conducteur

Country Status (11)

Country	Link
US (1)	US3880676A (fr)
JP (1)	JPS50113169A (fr)
BE (1)	BE821565A (fr)
BR (1)	BR7408804D0 (fr)
DE (1)	DE2450070A1 (fr)
FR (1)	FR2249442A1 (fr)
GB (1)	GB1446268A (fr)
IN (1)	IN140574B (fr)
IT (1)	IT1021262B (fr)
NL (1)	NL7413791A (fr)
SE (1)	SE401965B (fr)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US4033788A (en) *	1973-12-10	1977-07-05	Hughes Aircraft Company	Ion implanted gallium arsenide semiconductor devices fabricated in semi-insulating gallium arsenide substrates
JPS5210673A (en) *	1975-07-15	1977-01-27	Matsushita Electronics Corp	Manufacturing method of silicon semi-conductor device
US4055444A (en) *	1976-01-12	1977-10-25	Texas Instruments Incorporated	Method of making N-channel MOS integrated circuits
US4058413A (en) *	1976-05-13	1977-11-15	The United States Of America As Represented By The Secretary Of The Air Force	Ion implantation method for the fabrication of gallium arsenide semiconductor devices utilizing an aluminum nitride protective capping layer
US4881111A (en) *	1977-02-24	1989-11-14	Harris Corporation	Radiation hard, high emitter-base breakdown bipolar transistor
DE2733146C2 (de) *	1977-07-22	1984-11-08	Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt	Implantationsverfahren und dessen Verwendung zum Herstellen eines Transistors
DE2755418A1 (de) *	1977-12-13	1979-06-21	Bosch Gmbh Robert	Verfahren zur herstellung eines halbleiter-bauelements
US4402761A (en)	1978-12-15	1983-09-06	Raytheon Company	Method of making self-aligned gate MOS device having small channel lengths
DE2921793A1 (de) *	1979-05-29	1980-12-04	Fujitsu Ltd	Verfahren zum herstellen einer halbleitervorrichtung mit ionenimplantation
DE2967588D1 (en) *	1979-12-28	1986-04-24	Ibm	Method for achieving ideal impurity base profile in a transistor
DE3021215A1 (de) *	1980-06-04	1981-12-10	Siemens AG, 1000 Berlin und 8000 München	Verfahren zur stabilisierung der stromverstaerkung von npn-siliciumtransistoren
US4263066A (en) *	1980-06-09	1981-04-21	Varian Associates, Inc.	Process for concurrent formation of base diffusion and p+ profile from single source predeposition
EP0067507A3 (fr) *	1981-05-19	1983-05-04	The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and	Ecrans pour tubes cathodiques
JPS60116160A (ja) *	1983-11-29	1985-06-22	Sony Corp	半導体装置の製造方法
IT1217323B (it) *	1987-12-22	1990-03-22	Sgs Microelettronica Spa	Struttura integrata di transistor bipolare di potenza di alta tensione e di transistor mos di potenza di bassa tensione nella configurazione"emitter switching"e relativo processo di fabbricazione
USRE35642E (en) *	1987-12-22	1997-10-28	Sgs-Thomson Microelectronics, S.R.L.	Integrated high-voltage bipolar power transistor and low voltage MOS power transistor structure in the emitter switching configuration and relative manufacturing process
CN104465372B (zh) *	2014-12-24	2017-03-29	上海华虹宏力半导体制造有限公司	双极型三极管的制造方法及结构
US9589802B1 (en) *	2015-12-22	2017-03-07	Varian Semuconductor Equipment Associates, Inc.	Damage free enhancement of dopant diffusion into a substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB1053406A (fr) *	1963-05-18
US3279963A (en) *	1963-07-23	1966-10-18	Ibm	Fabrication of semiconductor devices
DE1514807B2 (de) *	1964-04-15	1971-09-02	Texas Instruments Inc., Dallas. Tex. (V.St.A.)	Verfahren zum herstellen einer planaren halbleiteranordnung
DE1544273A1 (de) *	1965-12-13	1969-09-04	Siemens Ag	Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall
FR2014382B1 (fr) *	1968-06-28	1974-03-15	Motorola Inc
US3638300A (en) *	1970-05-21	1972-02-01	Bell Telephone Labor Inc	Forming impurity regions in semiconductors
US3756861A (en) *	1972-03-13	1973-09-04	Bell Telephone Labor Inc	Bipolar transistors and method of manufacture

1973
- 1973-10-29 US US410548A patent/US3880676A/en not_active Expired - Lifetime
1974
- 1974-09-05 IN IN1997/CAL/74A patent/IN140574B/en unknown
- 1974-09-10 IT IT27149/74A patent/IT1021262B/it active
- 1974-10-21 FR FR7435300A patent/FR2249442A1/fr not_active Withdrawn
- 1974-10-22 DE DE19742450070 patent/DE2450070A1/de active Pending
- 1974-10-22 GB GB4562274A patent/GB1446268A/en not_active Expired
- 1974-10-22 NL NL7413791A patent/NL7413791A/xx not_active Application Discontinuation
- 1974-10-23 BR BR8804/74A patent/BR7408804D0/pt unknown
- 1974-10-24 JP JP49123258A patent/JPS50113169A/ja active Pending
- 1974-10-25 SE SE7413466A patent/SE401965B/xx unknown
- 1974-10-28 BE BE149954A patent/BE821565A/fr unknown

Also Published As

Publication number	Publication date
BR7408804D0 (pt)	1975-08-26
DE2450070A1 (de)	1975-04-30
SE401965B (sv)	1978-06-05
FR2249442A1 (fr)	1975-05-23
US3880676A (en)	1975-04-29
JPS50113169A (fr)	1975-09-05
GB1446268A (en)	1976-08-18
SE7413466L (fr)	1975-04-30
NL7413791A (nl)	1975-05-02
IN140574B (fr)	1976-12-04
IT1021262B (it)	1978-01-30

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