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BE816506A - METHOD AND DEVICE FOR MELTING BY ZONES WITHOUT CRUCIBLE OF A SEMICONDUCTOR CRYSTALLINE BAR - Google Patents

METHOD AND DEVICE FOR MELTING BY ZONES WITHOUT CRUCIBLE OF A SEMICONDUCTOR CRYSTALLINE BAR

Info

Publication number
BE816506A
BE816506A BE145571A BE145571A BE816506A BE 816506 A BE816506 A BE 816506A BE 145571 A BE145571 A BE 145571A BE 145571 A BE145571 A BE 145571A BE 816506 A BE816506 A BE 816506A
Authority
BE
Belgium
Prior art keywords
crucible
zones
melting
semiconductor crystalline
crystalline bar
Prior art date
Application number
BE145571A
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE816506A publication Critical patent/BE816506A/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28Controlling or regulating
    • C30B13/285Crystal holders, e.g. chucks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1084Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone having details of a stabilizing feature

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Engine Equipment That Uses Special Cycles (AREA)
BE145571A 1973-11-22 1974-06-18 METHOD AND DEVICE FOR MELTING BY ZONES WITHOUT CRUCIBLE OF A SEMICONDUCTOR CRYSTALLINE BAR BE816506A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2358300A DE2358300C3 (en) 1973-11-22 1973-11-22 Device for holding a semiconductor crystal rod vertically during crucible-free zone melting

Publications (1)

Publication Number Publication Date
BE816506A true BE816506A (en) 1974-10-16

Family

ID=5898815

Family Applications (1)

Application Number Title Priority Date Filing Date
BE145571A BE816506A (en) 1973-11-22 1974-06-18 METHOD AND DEVICE FOR MELTING BY ZONES WITHOUT CRUCIBLE OF A SEMICONDUCTOR CRYSTALLINE BAR

Country Status (7)

Country Link
US (2) US3923468A (en)
JP (1) JPS5337803B2 (en)
BE (1) BE816506A (en)
CA (1) CA1053545A (en)
DE (1) DE2358300C3 (en)
IT (1) IT1025571B (en)
PL (1) PL95739B1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4045278A (en) * 1973-11-22 1977-08-30 Siemens Aktiengesellschaft Method and apparatus for floating melt zone of semiconductor crystal rods
DE2455173C3 (en) * 1974-11-21 1979-01-18 Siemens Ag, 1000 Berlin Und 8000 Muenchen Device for vertical holding of the rod end containing the seed crystal during crucible-free zone melting
DE2529366A1 (en) * 1975-07-01 1977-01-20 Wacker Chemitronic DEVICE FOR SUPPORTING A CRYSTALLINE ROD
DE2652199C3 (en) * 1976-11-16 1982-05-19 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Device for supporting the crystal rod during crucible-free zone pulling
JP3376877B2 (en) * 1997-09-02 2003-02-10 信越半導体株式会社 Seed crystal holder
DE112017004008B4 (en) 2016-08-10 2021-08-26 Sumco Corporation Single crystal manufacturing method and apparatus
CN112429282B (en) * 2020-11-10 2022-04-12 常州嘉业智能装备科技有限公司 Funnel for multiple filling

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2989378A (en) * 1956-10-16 1961-06-20 Int Standard Electric Corp Producing silicon of high purity
GB848382A (en) * 1957-11-28 1960-09-14 Siemens Ag Improvements in or relating to the production of mono-crystalline bodies
NL126240C (en) * 1958-02-19
NL240421A (en) * 1958-07-30
US3134700A (en) * 1959-04-22 1964-05-26 Siemens Ag Dislocation removal by a last pass starting at a location displaced from the original seed into the grown crystal
US3179593A (en) * 1960-09-28 1965-04-20 Siemens Ag Method for producing monocrystalline semiconductor material
DE1303150B (en) * 1961-01-13 1971-05-13 Philips Nv
US3159408A (en) * 1961-10-05 1964-12-01 Grace W R & Co Chuck
BE626374A (en) * 1961-12-22
DE1519901A1 (en) * 1966-09-23 1970-02-12 Siemens Ag Method for crucible-free zone melting of a crystalline rod
DE1619993A1 (en) * 1967-03-03 1971-07-01 Siemens Ag Process for growing a rod-shaped single crystal from semiconductor material by crucible-free zone melting
US3494742A (en) * 1968-12-23 1970-02-10 Western Electric Co Apparatus for float zone melting fusible material
DE2059360A1 (en) * 1970-12-02 1972-06-08 Siemens Ag Process for the production of homogeneous bars from semiconductor material

Also Published As

Publication number Publication date
CA1053545A (en) 1979-05-01
DE2358300C3 (en) 1978-07-20
USRE30863E (en) 1982-02-09
JPS5084171A (en) 1975-07-07
JPS5337803B2 (en) 1978-10-12
DE2358300B2 (en) 1977-12-01
US3923468A (en) 1975-12-02
IT1025571B (en) 1978-08-30
PL95739B1 (en) 1977-11-30
DE2358300A1 (en) 1975-06-05

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