BE803528A - Procede de fabrication de dispositifs semi-conducteurs - Google Patents
Procede de fabrication de dispositifs semi-conducteursInfo
- Publication number
- BE803528A BE803528A BE134506A BE134506A BE803528A BE 803528 A BE803528 A BE 803528A BE 134506 A BE134506 A BE 134506A BE 134506 A BE134506 A BE 134506A BE 803528 A BE803528 A BE 803528A
- Authority
- BE
- Belgium
- Prior art keywords
- semiconductor devices
- manufacturing semiconductor
- manufacturing
- devices
- semiconductor
- Prior art date
Links
Classifications
-
- H10P95/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/113—Nitrides of boron or aluminum or gallium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/114—Nitrides of silicon
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US00281295A US3808058A (en) | 1972-08-17 | 1972-08-17 | Fabrication of mesa diode with channel guard |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE803528A true BE803528A (fr) | 1973-12-03 |
Family
ID=23076696
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE134506A BE803528A (fr) | 1972-08-17 | 1973-08-13 | Procede de fabrication de dispositifs semi-conducteurs |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3808058A (de) |
| JP (1) | JPS4960479A (de) |
| BE (1) | BE803528A (de) |
| CA (1) | CA967292A (de) |
| DE (1) | DE2341374A1 (de) |
| FR (1) | FR2196521A1 (de) |
| IT (1) | IT990232B (de) |
| NL (1) | NL7311147A (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2438256A1 (de) * | 1974-08-08 | 1976-02-19 | Siemens Ag | Verfahren zum herstellen einer monolithischen halbleiterverbundanordnung |
| JPS5138983A (de) * | 1974-09-30 | 1976-03-31 | Hitachi Ltd | |
| US4046595A (en) * | 1974-10-18 | 1977-09-06 | Matsushita Electronics Corporation | Method for forming semiconductor devices |
| US4044454A (en) * | 1975-04-16 | 1977-08-30 | Ibm Corporation | Method for forming integrated circuit regions defined by recessed dielectric isolation |
| JPS51149784A (en) * | 1975-06-17 | 1976-12-22 | Matsushita Electric Ind Co Ltd | Solid state light emission device |
| US4030943A (en) * | 1976-05-21 | 1977-06-21 | Hughes Aircraft Company | Planar process for making high frequency ion implanted passivated semiconductor devices and microwave integrated circuits |
| US4066473A (en) * | 1976-07-15 | 1978-01-03 | Fairchild Camera And Instrument Corporation | Method of fabricating high-gain transistors |
| US4149904A (en) * | 1977-10-21 | 1979-04-17 | Ncr Corporation | Method for forming ion-implanted self-aligned gate structure by controlled ion scattering |
| JPS6011161Y2 (ja) * | 1979-05-16 | 1985-04-13 | 三菱重工業株式会社 | コンクリ−トパイルの杭頭部破砕処理装置 |
| US4276098A (en) * | 1980-03-31 | 1981-06-30 | Bell Telephone Laboratories, Incorporated | Batch processing of semiconductor devices |
| US5268310A (en) * | 1992-11-25 | 1993-12-07 | M/A-Com, Inc. | Method for making a mesa type PIN diode |
| KR100631279B1 (ko) * | 2004-12-31 | 2006-10-02 | 동부일렉트로닉스 주식회사 | 고전압용 트랜지스터의 제조 방법 |
| WO2007142603A1 (en) * | 2006-06-09 | 2007-12-13 | Agency For Science, Technology And Research | An integrated shadow mask and method of fabrication thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3484313A (en) * | 1965-03-25 | 1969-12-16 | Hitachi Ltd | Method of manufacturing semiconductor devices |
| JPS4826179B1 (de) * | 1968-09-30 | 1973-08-07 | ||
| US3639975A (en) * | 1969-07-30 | 1972-02-08 | Gen Electric | Glass encapsulated semiconductor device fabrication process |
| GB1332931A (en) * | 1970-01-15 | 1973-10-10 | Mullard Ltd | Methods of manufacturing a semiconductor device |
| US3728179A (en) * | 1970-05-20 | 1973-04-17 | Radiation Inc | Method of etching silicon crystals |
| US3675313A (en) * | 1970-10-01 | 1972-07-11 | Westinghouse Electric Corp | Process for producing self aligned gate field effect transistor |
-
1972
- 1972-08-17 US US00281295A patent/US3808058A/en not_active Expired - Lifetime
-
1973
- 1973-02-27 CA CA164,715A patent/CA967292A/en not_active Expired
- 1973-08-03 FR FR7328497A patent/FR2196521A1/fr not_active Withdrawn
- 1973-08-13 NL NL7311147A patent/NL7311147A/xx unknown
- 1973-08-13 IT IT51989/73A patent/IT990232B/it active
- 1973-08-13 BE BE134506A patent/BE803528A/xx unknown
- 1973-08-16 DE DE19732341374 patent/DE2341374A1/de active Pending
- 1973-08-17 JP JP48091819A patent/JPS4960479A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS4960479A (de) | 1974-06-12 |
| NL7311147A (de) | 1974-02-19 |
| IT990232B (it) | 1975-06-20 |
| CA967292A (en) | 1975-05-06 |
| FR2196521A1 (de) | 1974-03-15 |
| DE2341374A1 (de) | 1974-03-14 |
| US3808058A (en) | 1974-04-30 |
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