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BE648706A - - Google Patents

Info

Publication number
BE648706A
BE648706A BE648706DA BE648706A BE 648706 A BE648706 A BE 648706A BE 648706D A BE648706D A BE 648706DA BE 648706 A BE648706 A BE 648706A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of BE648706A publication Critical patent/BE648706A/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0114—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including vertical BJTs and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H10W10/00—
    • H10W10/01—
    • H10W20/40—
    • H10W20/497—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/036—Diffusion, nonselective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/053—Field effect transistors fets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/096—Lateral transistor
BE648706D 1963-05-31 1964-06-01 BE648706A (xx)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US284611A US3197710A (en) 1963-05-31 1963-05-31 Complementary transistor structure
US466782A US3412460A (en) 1963-05-31 1965-06-24 Method of making complementary transistor structure

Publications (1)

Publication Number Publication Date
BE648706A true BE648706A (xx) 1964-10-01

Family

ID=26962706

Family Applications (1)

Application Number Title Priority Date Filing Date
BE648706D BE648706A (xx) 1963-05-31 1964-06-01

Country Status (4)

Country Link
US (2) US3197710A (xx)
BE (1) BE648706A (xx)
DE (1) DE1294557C2 (xx)
GB (1) GB1023565A (xx)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3293087A (en) * 1963-03-05 1966-12-20 Fairchild Camera Instr Co Method of making isolated epitaxial field-effect device
BE650116A (xx) * 1963-07-05 1900-01-01
US3264493A (en) * 1963-10-01 1966-08-02 Fairchild Camera Instr Co Semiconductor circuit module for a high-gain, high-input impedance amplifier
US3379940A (en) * 1964-02-11 1968-04-23 Nippon Electric Co Integrated symmetrical conduction device
US3320485A (en) * 1964-03-30 1967-05-16 Trw Inc Dielectric isolation for monolithic circuit
US3312882A (en) * 1964-06-25 1967-04-04 Westinghouse Electric Corp Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response
BE670213A (xx) * 1964-09-30 1900-01-01
US3307079A (en) * 1964-10-20 1967-02-28 Burroughs Corp Semiconductor switch devices
US3337751A (en) * 1965-01-29 1967-08-22 Melvin H Poston Integrated circuitry including scr and field-effect structure
US3426254A (en) * 1965-06-21 1969-02-04 Sprague Electric Co Transistors and method of manufacturing the same
US3450959A (en) * 1965-07-06 1969-06-17 Sylvania Electric Prod Four-layer semiconductor switching devices in integrated circuitry
US3423653A (en) * 1965-09-14 1969-01-21 Westinghouse Electric Corp Integrated complementary transistor structure with equivalent performance characteristics
US3414782A (en) * 1965-12-03 1968-12-03 Westinghouse Electric Corp Semiconductor structure particularly for performing unipolar transistor functions in integrated circuits
US3466461A (en) * 1966-12-20 1969-09-09 Burroughs Corp Semiconductor device and circuit free of avalanche oscillations
FR1064185A (fr) * 1967-05-23 1954-05-11 Philips Nv Procédé de fabrication d'un système d'électrodes
US3579059A (en) * 1968-03-11 1971-05-18 Nat Semiconductor Corp Multiple collector lateral transistor device
US3651565A (en) * 1968-09-09 1972-03-28 Nat Semiconductor Corp Lateral transistor structure and method of making the same
NL162511C (nl) * 1969-01-11 1980-05-16 Philips Nv Geintegreerde halfgeleiderschakeling met een laterale transistor en werkwijze voor het vervaardigen van de geintegreerde halfgeleiderschakeling.
US3729661A (en) * 1971-02-11 1973-04-24 Radiation Inc Semiconductor device
JPS5135113B1 (xx) * 1971-06-29 1976-09-30
JPS4818055U (xx) * 1971-07-09 1973-03-01
US3694670A (en) * 1971-10-26 1972-09-26 Joseph M Marzolf Easily switched silicon controlled rectifier
DE2304647C2 (de) * 1973-01-31 1984-06-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper
US3974404A (en) * 1973-02-15 1976-08-10 Motorola, Inc. Integrated circuit interface stage for high noise environment
US3971059A (en) * 1974-09-23 1976-07-20 National Semiconductor Corporation Complementary bipolar transistors having collector diffused isolation
FR2375722A1 (fr) * 1976-12-21 1978-07-21 Thomson Csf Element logique a faible consommation
IT1111981B (it) * 1979-02-13 1986-01-13 Ates Componenti Elettron Struttura di transistore v(br)ceo protetto per il caso di inversione delle polarita' di alimentazione e prodotto risultante
JPS55143809A (en) * 1979-04-25 1980-11-10 Hitachi Ltd Push-pull circuit
FR2457564A1 (fr) * 1979-05-23 1980-12-19 Thomson Csf Transistor pnp pour circuit integre bipolaire et son procede de fabrication
JPS55165009A (en) * 1979-06-11 1980-12-23 Hitachi Ltd Signal transmission circuit
US4549196A (en) * 1982-08-04 1985-10-22 Westinghouse Electric Corp. Lateral bipolar transistor
US8531001B2 (en) 2011-06-12 2013-09-10 International Business Machines Corporation Complementary bipolar inverter
US8526220B2 (en) 2011-06-12 2013-09-03 International Business Machines Corporation Complementary SOI lateral bipolar for SRAM in a low-voltage CMOS platform
US8929133B2 (en) 2012-12-02 2015-01-06 International Business Machines Corporation Complementary SOI lateral bipolar for SRAM in a CMOS platform

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA650779A (en) * 1962-10-23 J. W. Jochems Pieter Transistor element and transistor circuit
US3089219A (en) * 1953-10-19 1963-05-14 Raytheon Co Transistor assembly and method
US2994834A (en) * 1956-02-29 1961-08-01 Baldwin Piano Co Transistor amplifiers
US3063129A (en) * 1956-08-08 1962-11-13 Bendix Corp Transistor
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3103599A (en) * 1960-07-26 1963-09-10 Integrated semiconductor representing
US3142021A (en) * 1961-02-27 1964-07-21 Westinghouse Electric Corp Monolithic semiconductor amplifier providing two amplifier stages
US3199002A (en) * 1961-04-17 1965-08-03 Fairchild Camera Instr Co Solid-state circuit with crossing leads and method for making the same
US3256587A (en) * 1962-03-23 1966-06-21 Solid State Products Inc Method of making vertically and horizontally integrated microcircuitry
GB1047388A (xx) * 1962-10-05
US3246214A (en) * 1963-04-22 1966-04-12 Siliconix Inc Horizontally aligned junction transistor structure

Also Published As

Publication number Publication date
DE1294557B (xx) 1975-07-17
GB1023565A (en) 1966-03-23
DE1294557C2 (de) 1975-07-17
US3412460A (en) 1968-11-26
US3197710A (en) 1965-07-27

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