AU9002998A - Semiconductor photoelectric surface - Google Patents

Semiconductor photoelectric surface

Info

Publication number: AU9002998A
Authority: AU; Australia
Prior art keywords: semiconductor photoelectric; photoelectric surface; semiconductor; photoelectric
Prior art date: 1997-09-24
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU90029/98A

Inventor

Tokuaki Nihashi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Hamamatsu Photonics KK

Original Assignee

Hamamatsu Photonics KK

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-09-24

Filing date

1998-09-11

Publication date

1999-04-12

1998-09-11 Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK

1999-04-12 Publication of AU9002998A publication Critical patent/AU9002998A/en

Status Abandoned legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J40/00—Photoelectric discharge tubes not involving the ionisation of a gas
- H01J40/02—Details
- H01J40/04—Electrodes
- H01J40/06—Photo-emissive cathodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/34—Photo-emissive cathodes
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/34—Photoemissive electrodes
- H01J2201/342—Cathodes
- H01J2201/3421—Composition of the emitting surface
- H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters

AU90029/98A 1997-09-24 1998-09-11 Semiconductor photoelectric surface Abandoned AU9002998A (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP25883797A JPH1196896A (en)	1997-09-24	1997-09-24	Semiconductor photoelectric surface
JP9-258837		1997-09-24
PCT/JP1998/004119 WO1999016098A1 (en)	1997-09-24	1998-09-11	Semiconductor photoelectric surface

Publications (1)

Publication Number	Publication Date
AU9002998A true AU9002998A (en)	1999-04-12

Family

ID=17325721

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU90029/98A Abandoned AU9002998A (en)	1997-09-24	1998-09-11	Semiconductor photoelectric surface

Country Status (5)

Country	Link
EP (1)	EP1024513B1 (en)
JP (1)	JPH1196896A (en)
AU (1)	AU9002998A (en)
DE (1)	DE69807103T2 (en)
WO (1)	WO1999016098A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
RU2249877C2 (en) *	2003-04-29	2005-04-10	Бенеманская Галина Вадимовна	Device for producing photoelectronic emission into vacuum
JP2006302843A (en) *	2005-04-25	2006-11-02	Hamamatsu Photonics Kk	Photoelectric surface and electron tube provided with it
RU2454750C2 (en) *	2010-08-02	2012-06-27	Учреждение Российской академии наук Физико-технический институт им. А.Ф. Иоффе РАН	Photocathode
CN102087937A (en) *	2011-01-07	2011-06-08	南京理工大学	Exponential-doping GaN ultraviolet photocathode material structure and preparation method thereof
US9478402B2 (en) *	2013-04-01	2016-10-25	Kla-Tencor Corporation	Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
CN105428183B (en) *	2015-11-17	2017-08-04	南京理工大学	A reflective NEA GaN nanowire array photocathode and its preparation method
FI3631299T3 (en)	2017-05-30	2024-06-13	Carrier Corp	Semiconductor film and phototube light detector

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
NL147572B (en) *	1964-12-02	1975-10-15	Philips Nv	ELECTRIC DISCHARGE TUBE WITH A PHOTO CATHOD.
US3644770A (en) *	1968-01-18	1972-02-22	Varian Associates	Photoemitter having a p-type semiconductive substrate overlaid with cesium and n-type cesium oxide layers
US3631303A (en) *	1970-01-19	1971-12-28	Varian Associates	Iii-v cathodes having a built-in gradient of potential energy for increasing the emission efficiency
FR2217805A1 (en) *	1973-02-13	1974-09-06	Labo Electronique Physique	Semiconductor photocathode for near-infrared radiation - comprising transparent gallium-aluminium arsenide layer and electron-emitting gallium-indium arsenide layer
US4352117A (en) *	1980-06-02	1982-09-28	International Business Machines Corporation	Electron source
FR2507386A1 (en) *	1981-06-03	1982-12-10	Labo Electronique Physique	SEMICONDUCTOR DEVICE, ELECTRON TRANSMITTER, WITH ACTIVE LAYER HAVING A DOPING GRADIENT
US5047821A (en) *	1990-03-15	1991-09-10	Intevac, Inc.	Transferred electron III-V semiconductor photocathode
JPH0750587B2 (en) *	1991-02-25	1995-05-31	浜松ホトニクス株式会社	Semiconductor photoelectron emitter
JPH06223709A (en) *	1993-01-25	1994-08-12	Katsumi Kishino	Polarized electron beam generator

1997
- 1997-09-24 JP JP25883797A patent/JPH1196896A/en active Pending
1998
- 1998-09-11 EP EP98941849A patent/EP1024513B1/en not_active Expired - Lifetime
- 1998-09-11 AU AU90029/98A patent/AU9002998A/en not_active Abandoned
- 1998-09-11 WO PCT/JP1998/004119 patent/WO1999016098A1/en not_active Ceased
- 1998-09-11 DE DE69807103T patent/DE69807103T2/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
WO1999016098A1 (en)	1999-04-01
DE69807103T2 (en)	2003-01-23
EP1024513A4 (en)	2000-09-20
EP1024513A1 (en)	2000-08-02
JPH1196896A (en)	1999-04-09
EP1024513B1 (en)	2002-08-07
DE69807103D1 (en)	2002-09-12

Publication	Publication Date	Title
AU4716297A (en)	1998-05-15	Optoelectronic semiconductor devices
AU4118099A (en)	1999-07-12	Semiconductor device
AU738480C (en)	2002-08-22	Nitride semiconductor device
AU8453298A (en)	1999-02-22	Polishing semiconductor wafers
AU2739597A (en)	1997-11-26	Semiconductor hetero-interface photodetector
GB9714468D0 (en)	1997-09-17	Optoelectronic semiconductor devices
AU3664899A (en)	2000-01-05	Substrate sensor
AU1311900A (en)	2000-05-01	Solid-state photoelectric device
AU1040397A (en)	1998-06-29	Semiconductor device
AU1685300A (en)	2000-07-03	Semiconductor device
GB9700923D0 (en)	1997-03-05	Semiconductor devices
AU6112098A (en)	1999-09-20	Semiconductor imaging device
AU7764298A (en)	1998-11-27	Semiconductor imaging device
AU3628297A (en)	1998-04-24	Semiconductor fabrication
GB2336849B (en)	2003-02-26	Substrate materials
AU9002998A (en)	1999-04-12	Semiconductor photoelectric surface
EP0803915A3 (en)	1998-05-06	Semiconductor photodetector
AU6368099A (en)	2000-05-22	Semiconductor energy sensor
AU8856198A (en)	1999-01-25	Cleaner
AUPP036697A0 (en)	1997-12-11	Odour-proof package
AU7017798A (en)	1998-11-27	Concrete surface
GB9717498D0 (en)	1997-10-22	Substrate facing
HUP0004504A3 (en)	2002-11-28	Semiconductor component
AU2945599A (en)	1999-10-25	Immune response
AU6200799A (en)	2000-05-01	Improving immune function

Legal Events

Date	Code	Title	Description
2000-06-08	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase