AU5631900A - Single heterojunction inp-collector bjt device and method - Google Patents
Single heterojunction inp-collector bjt device and methodInfo
- Publication number
- AU5631900A AU5631900A AU56319/00A AU5631900A AU5631900A AU 5631900 A AU5631900 A AU 5631900A AU 56319/00 A AU56319/00 A AU 56319/00A AU 5631900 A AU5631900 A AU 5631900A AU 5631900 A AU5631900 A AU 5631900A
- Authority
- AU
- Australia
- Prior art keywords
- inp
- bjt device
- single heterojunction
- collector
- collector bjt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10D62/852—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs being Group III-V materials comprising three or more elements, e.g. AlGaN or InAsSbP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33821799A | 1999-06-22 | 1999-06-22 | |
| US09338217 | 1999-06-22 | ||
| PCT/US2000/017156 WO2000079600A1 (en) | 1999-06-22 | 2000-06-22 | SINGLE HETEROJUNCTION InP-COLLECTOR BJT DEVICE AND METHOD |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU5631900A true AU5631900A (en) | 2001-01-09 |
Family
ID=23323907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU56319/00A Abandoned AU5631900A (en) | 1999-06-22 | 2000-06-22 | Single heterojunction inp-collector bjt device and method |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU5631900A (en) |
| WO (1) | WO2000079600A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6696710B2 (en) * | 2001-02-27 | 2004-02-24 | Agilent Technologies, Inc. | Heterojunction bipolar transistor (HBT) having an improved emitter-base junction |
| US9530708B1 (en) | 2013-05-31 | 2016-12-27 | Hrl Laboratories, Llc | Flexible electronic circuit and method for manufacturing same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4821082A (en) * | 1987-10-30 | 1989-04-11 | International Business Machines Corporation | Heterojunction bipolar transistor with substantially aligned energy levels |
| US5164800A (en) * | 1990-08-30 | 1992-11-17 | Sumitomo Electric Industries, Ltd. | Semiconductor device |
| US5404028A (en) * | 1993-01-22 | 1995-04-04 | Hughes Aircraft Company | Electrical junction device with lightly doped buffer region to precisely locate a p-n junction |
| US5799026A (en) * | 1996-11-01 | 1998-08-25 | The United States Of America As Represented By The Secretary Of The Navy | Interband quantum well cascade laser, with a blocking quantum well for improved quantum efficiency |
-
2000
- 2000-06-22 AU AU56319/00A patent/AU5631900A/en not_active Abandoned
- 2000-06-22 WO PCT/US2000/017156 patent/WO2000079600A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000079600A1 (en) | 2000-12-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |