AU4715300A - Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography - Google Patents
Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithographyInfo
- Publication number
- AU4715300A AU4715300A AU47153/00A AU4715300A AU4715300A AU 4715300 A AU4715300 A AU 4715300A AU 47153/00 A AU47153/00 A AU 47153/00A AU 4715300 A AU4715300 A AU 4715300A AU 4715300 A AU4715300 A AU 4715300A
- Authority
- AU
- Australia
- Prior art keywords
- charged particle
- particle beam
- shielded
- calibrations
- microfabricated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H10P76/00—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/10—Lenses
- H01J2237/12—Lenses electrostatic
- H01J2237/1205—Microlenses
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30450599A | 1999-05-03 | 1999-05-03 | |
| US09304505 | 1999-05-03 | ||
| PCT/US2000/040082 WO2000067291A2 (en) | 1999-05-03 | 2000-05-03 | Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU4715300A true AU4715300A (en) | 2000-11-17 |
Family
ID=23176813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU47153/00A Abandoned AU4715300A (en) | 1999-05-03 | 2000-05-03 | Microfabricated template for multiple charged particle beam calibrations and shielded charged particle beam lithography |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1135789A2 (en) |
| JP (1) | JP2002543607A (en) |
| KR (1) | KR20010100758A (en) |
| AU (1) | AU4715300A (en) |
| CA (1) | CA2336557A1 (en) |
| IL (1) | IL140714A0 (en) |
| WO (1) | WO2000067291A2 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4677109B2 (en) * | 2001-03-06 | 2011-04-27 | 株式会社トプコン | Reference template manufacturing method and reference template manufactured by the method |
| DE60127677T2 (en) | 2001-10-05 | 2007-12-27 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Electron beam device with multiple beam |
| US8122846B2 (en) | 2005-10-26 | 2012-02-28 | Micronic Mydata AB | Platforms, apparatuses, systems and methods for processing and analyzing substrates |
| WO2007050023A1 (en) | 2005-10-26 | 2007-05-03 | Micronic Laser Systems Ab | Writing apparatuses and methods |
| JP5175713B2 (en) * | 2007-03-02 | 2013-04-03 | 株式会社アドバンテスト | Multi-column electron beam exposure mask, electron beam exposure apparatus and exposure method using multi-column electron beam exposure mask |
| WO2014140047A2 (en) | 2013-03-12 | 2014-09-18 | Micronic Mydata AB | Method and device for writing photomasks with reduced mura errors |
| EP2972589B1 (en) | 2013-03-12 | 2017-05-03 | Micronic Mydata AB | Mechanically produced alignment fiducial method and alignment system |
| CN112397363B (en) * | 2020-09-28 | 2022-08-30 | 西安增材制造国家研究院有限公司 | Electron gun beam spot correction device and correction method |
| DE102021120913B3 (en) * | 2021-08-11 | 2023-02-09 | Carl Zeiss Smt Gmbh | Device for analyzing and/or processing a sample with a particle beam and method |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1100237A (en) * | 1977-03-23 | 1981-04-28 | Roger F.W. Pease | Multiple electron beam exposure system |
| DE3020809A1 (en) * | 1980-06-02 | 1981-12-10 | M.A.N. Maschinenfabrik Augsburg-Nürnberg AG, 8000 München | METHOD FOR PRODUCING AN ELECTRON BEAM LEFT WINDOW |
| US4528452A (en) * | 1982-12-09 | 1985-07-09 | Electron Beam Corporation | Alignment and detection system for electron image projectors |
| EP0289885A1 (en) * | 1987-05-08 | 1988-11-09 | Siemens Aktiengesellschaft | Aperture system for production of several partical probes with changeable cross-section |
| US5012105A (en) * | 1989-02-02 | 1991-04-30 | Nippon Seiko Kabushiki Kaisha | Multiple-imaging charged particle-beam exposure system |
| US4987311A (en) * | 1989-08-08 | 1991-01-22 | Etec Systems, Inc. | Electron-detector diode biassing scheme for improved writing by an electron beam lithography machine |
| US5155412A (en) * | 1991-05-28 | 1992-10-13 | International Business Machines Corporation | Method for selectively scaling a field emission electron gun and device formed thereby |
| US5122663A (en) * | 1991-07-24 | 1992-06-16 | International Business Machine Corporation | Compact, integrated electron beam imaging system |
| JP3033484B2 (en) * | 1995-12-21 | 2000-04-17 | 日本電気株式会社 | Electron beam exposure equipment |
| US5838006A (en) * | 1996-10-17 | 1998-11-17 | Etec Systems, Inc. | Conical baffle for reducing charging drift in a particle beam system |
| US5831272A (en) * | 1997-10-21 | 1998-11-03 | Utsumi; Takao | Low energy electron beam lithography |
| JP2000252207A (en) * | 1998-08-19 | 2000-09-14 | Ims Ionen Mikrofab Syst Gmbh | Particle beam multi-beam lithography |
-
2000
- 2000-05-03 IL IL14071400A patent/IL140714A0/en unknown
- 2000-05-03 EP EP00929001A patent/EP1135789A2/en not_active Withdrawn
- 2000-05-03 KR KR1020017000065A patent/KR20010100758A/en not_active Withdrawn
- 2000-05-03 CA CA002336557A patent/CA2336557A1/en not_active Abandoned
- 2000-05-03 WO PCT/US2000/040082 patent/WO2000067291A2/en not_active Ceased
- 2000-05-03 AU AU47153/00A patent/AU4715300A/en not_active Abandoned
- 2000-05-03 JP JP2000616043A patent/JP2002543607A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2000067291A2 (en) | 2000-11-09 |
| KR20010100758A (en) | 2001-11-14 |
| CA2336557A1 (en) | 2000-11-09 |
| IL140714A0 (en) | 2002-02-10 |
| WO2000067291A3 (en) | 2001-07-05 |
| EP1135789A2 (en) | 2001-09-26 |
| JP2002543607A (en) | 2002-12-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |