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AU4461000A - Msm optical detector with an active region heterojunction forming a two-dimensional electron gas - Google Patents

Msm optical detector with an active region heterojunction forming a two-dimensional electron gas

Info

Publication number
AU4461000A
AU4461000A AU44610/00A AU4461000A AU4461000A AU 4461000 A AU4461000 A AU 4461000A AU 44610/00 A AU44610/00 A AU 44610/00A AU 4461000 A AU4461000 A AU 4461000A AU 4461000 A AU4461000 A AU 4461000A
Authority
AU
Australia
Prior art keywords
active region
optical detector
electron gas
dimensional electron
msm
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU44610/00A
Inventor
James A. Mcadoo
Michael O'hagan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Aeronautics and Space Administration NASA
Silkroad Inc
Original Assignee
National Aeronautics and Space Administration NASA
Silkroad Inc
Government of the United States of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Aeronautics and Space Administration NASA, Silkroad Inc, Government of the United States of America filed Critical National Aeronautics and Space Administration NASA
Publication of AU4461000A publication Critical patent/AU4461000A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
AU44610/00A 1999-04-19 2000-04-14 Msm optical detector with an active region heterojunction forming a two-dimensional electron gas Abandoned AU4461000A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US29469399A 1999-04-19 1999-04-19
US09294693 1999-04-19
PCT/US2000/010113 WO2000063973A1 (en) 1999-04-19 2000-04-14 Msm optical detector with an active region heterojunction forming a two-dimensional electron gas

Publications (1)

Publication Number Publication Date
AU4461000A true AU4461000A (en) 2000-11-02

Family

ID=23134526

Family Applications (1)

Application Number Title Priority Date Filing Date
AU44610/00A Abandoned AU4461000A (en) 1999-04-19 2000-04-14 Msm optical detector with an active region heterojunction forming a two-dimensional electron gas

Country Status (2)

Country Link
AU (1) AU4461000A (en)
WO (1) WO2000063973A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6295693B2 (en) 2014-02-07 2018-03-20 ソニー株式会社 Imaging device
JP6642599B2 (en) * 2018-02-20 2020-02-05 ソニー株式会社 Light receiving element, imaging element and imaging device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4593304A (en) * 1981-04-20 1986-06-03 Hughes Aircraft Company Heterostructure interdigital high speed photoconductive detector
US4807006A (en) * 1987-06-19 1989-02-21 International Business Machines Corporation Heterojunction interdigitated schottky barrier photodetector
US4998154A (en) * 1990-01-18 1991-03-05 Northern Telecom Limited MSM photodetector with superlattice
US5214527A (en) * 1990-09-26 1993-05-25 Bell Communications Research, Inc. Electronically switched multiple-channel optical receiver
US5451769A (en) * 1994-01-05 1995-09-19 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Circular electrode geometry metal-semiconductor-metal photodetectors
US5494833A (en) * 1994-07-14 1996-02-27 The United States Of America As Represented By The Secretary Of The Air Force Backside illuminated MSM device method
US5652435A (en) * 1995-09-01 1997-07-29 The United States Of America As Represented By The Secretary Of The Air Force Vertical structure schottky diode optical detector
US5777390A (en) * 1995-10-10 1998-07-07 The University Of Delaware Transparent and opaque metal-semiconductor-metal photodetectors
US5780915A (en) * 1995-12-26 1998-07-14 Lg Semicon Co., Ltd. Semiconductor device having spiral electrode pattern
US5880482A (en) * 1997-01-29 1999-03-09 The Board Of Trustees Of The University Of Illinios Low dark current photodetector

Also Published As

Publication number Publication date
WO2000063973A1 (en) 2000-10-26

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase