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AU3857397A - Radio frequency plasma generator - Google Patents

Radio frequency plasma generator

Info

Publication number
AU3857397A
AU3857397A AU38573/97A AU3857397A AU3857397A AU 3857397 A AU3857397 A AU 3857397A AU 38573/97 A AU38573/97 A AU 38573/97A AU 3857397 A AU3857397 A AU 3857397A AU 3857397 A AU3857397 A AU 3857397A
Authority
AU
Australia
Prior art keywords
radio frequency
plasma generator
frequency plasma
generator
radio
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU38573/97A
Inventor
Michael Inman
Peter Charles Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricardo AEA Ltd
Original Assignee
AEA Technology PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AEA Technology PLC filed Critical AEA Technology PLC
Publication of AU3857397A publication Critical patent/AU3857397A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
AU38573/97A 1996-09-13 1997-08-08 Radio frequency plasma generator Abandoned AU3857397A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB9619141 1996-09-13
GB9619141A GB2317265A (en) 1996-09-13 1996-09-13 Radio frequency plasma generator
PCT/GB1997/002144 WO1998011764A1 (en) 1996-09-13 1997-08-08 Radio frequency plasma generator

Publications (1)

Publication Number Publication Date
AU3857397A true AU3857397A (en) 1998-04-02

Family

ID=10799881

Family Applications (1)

Application Number Title Priority Date Filing Date
AU38573/97A Abandoned AU3857397A (en) 1996-09-13 1997-08-08 Radio frequency plasma generator

Country Status (3)

Country Link
AU (1) AU3857397A (en)
GB (1) GB2317265A (en)
WO (1) WO1998011764A1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2813294A1 (en) 2005-08-30 2014-12-17 Advanced Technology Materials, Inc. Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides for implantation
US7605595B2 (en) 2006-09-29 2009-10-20 General Electric Company System for clearance measurement and method of operating the same
US7454974B2 (en) 2006-09-29 2008-11-25 General Electric Company Probe system, ultrasound system and method of generating ultrasound
EP2068304A1 (en) * 2007-12-05 2009-06-10 General Electric Company Probe system, ultrasound system and method of generating ultrasound
US20110021011A1 (en) 2009-07-23 2011-01-27 Advanced Technology Materials, Inc. Carbon materials for carbon implantation
US8598022B2 (en) 2009-10-27 2013-12-03 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8138071B2 (en) 2009-10-27 2012-03-20 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
US8062965B2 (en) 2009-10-27 2011-11-22 Advanced Technology Materials, Inc. Isotopically-enriched boron-containing compounds, and methods of making and using same
TWI582836B (en) 2010-02-26 2017-05-11 恩特葛瑞斯股份有限公司 Method and apparatus for enhancing the lifetime and performance of an ion source in an ion implantation system
US8779383B2 (en) 2010-02-26 2014-07-15 Advanced Technology Materials, Inc. Enriched silicon precursor compositions and apparatus and processes for utilizing same
CN103201824B (en) 2010-08-30 2016-09-07 恩特格里斯公司 Preparation of compounds or intermediates thereof from solid materials and devices and methods for using the compounds and intermediates
TWI583442B (en) 2011-10-10 2017-05-21 恩特葛瑞斯股份有限公司 B2f4 manufacturing process
KR20210070400A (en) 2012-02-14 2021-06-14 엔테그리스, 아이엔씨. Carbon dopant gas and co-flow for implant beam and source life performance
KR102306410B1 (en) 2013-08-16 2021-09-28 엔테그리스, 아이엔씨. Silicon implantation in substrates and provision of silicon precursor compositions therefor
CN106025546B (en) * 2016-05-25 2019-03-08 哈尔滨工业大学 A device for enhancing electromagnetic radiation of a miniaturized omnidirectional antenna using plasma modulation
WO2022054225A1 (en) * 2020-09-11 2022-03-17 株式会社Kokusai Electric Substrate treatment device, production method for semiconductor device, and plasma generator
CN117693805A (en) * 2021-09-22 2024-03-12 株式会社国际电气 Substrate processing apparatus, plasma generation apparatus, semiconductor device manufacturing method and program
CN119997337B (en) * 2025-01-22 2025-09-12 哈尔滨工业大学 Hemispherical inductively coupled plasma source with adjustable density distribution

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61135037A (en) * 1984-12-06 1986-06-23 Matsushita Electric Ind Co Ltd Device and method for ion irradiation
JPS62103370A (en) * 1985-10-30 1987-05-13 Hitachi Ltd Electrophotographic photoreceptor manufacturing equipment
JPH0711072B2 (en) * 1986-04-04 1995-02-08 株式会社日立製作所 Ion source device
JPS6338585A (en) * 1986-08-01 1988-02-19 Hitachi Ltd plasma equipment
US5036252A (en) * 1988-04-26 1991-07-30 Hauzer Holding Bv Radio frequency ion beam source
DE4034842A1 (en) * 1990-11-02 1992-05-07 Thyssen Edelstahlwerke Ag METHOD FOR PLASMA MECHANICAL CLEANING FOR A SUBSEQUENT PVD OR PECVD COATING
JPH04337076A (en) * 1991-05-14 1992-11-25 Yuuha Mikakutou Seimitsu Kogaku Kenkyusho:Kk High-speed film formation by plasma and radical cvd method under high pressure
US5198677A (en) * 1991-10-11 1993-03-30 The United States Of America As Represented By The United States Department Of Energy Production of N+ ions from a multicusp ion beam apparatus
DE4241927C2 (en) * 1992-12-11 1994-09-22 Max Planck Gesellschaft Self-supporting, insulated electrode arrangement suitable for arrangement in a vacuum vessel, in particular antenna coil for a high-frequency plasma generator
US5309063A (en) * 1993-03-04 1994-05-03 David Sarnoff Research Center, Inc. Inductive coil for inductively coupled plasma production apparatus
DE4337119C2 (en) * 1993-10-29 1996-10-24 Forsch Applikationslabor Plasm VHF plasma source
US5556521A (en) * 1995-03-24 1996-09-17 Sony Corporation Sputter etching apparatus with plasma source having a dielectric pocket and contoured plasma source

Also Published As

Publication number Publication date
GB2317265A (en) 1998-03-18
GB9619141D0 (en) 1996-10-23
WO1998011764A1 (en) 1998-03-19

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