AU3226793A - Method of modifying contact resistance in semiconductor devices and articles produced thereby - Google Patents
Method of modifying contact resistance in semiconductor devices and articles produced therebyInfo
- Publication number
- AU3226793A AU3226793A AU32267/93A AU3226793A AU3226793A AU 3226793 A AU3226793 A AU 3226793A AU 32267/93 A AU32267/93 A AU 32267/93A AU 3226793 A AU3226793 A AU 3226793A AU 3226793 A AU3226793 A AU 3226793A
- Authority
- AU
- Australia
- Prior art keywords
- semiconductor devices
- contact resistance
- articles produced
- modifying contact
- modifying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H10D64/0111—
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US79853891A | 1991-11-26 | 1991-11-26 | |
| US798538 | 1991-11-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| AU3226793A true AU3226793A (en) | 1993-06-28 |
Family
ID=25173659
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AU32267/93A Abandoned AU3226793A (en) | 1991-11-26 | 1992-11-24 | Method of modifying contact resistance in semiconductor devices and articles produced thereby |
Country Status (2)
| Country | Link |
|---|---|
| AU (1) | AU3226793A (en) |
| WO (1) | WO1993011558A1 (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5342652A (en) * | 1992-06-15 | 1994-08-30 | Materials Research Corporation | Method of nucleating tungsten on titanium nitride by CVD without silane |
| JPH0730095A (en) * | 1993-06-25 | 1995-01-31 | Mitsubishi Electric Corp | Semiconductor device and manufacturing method thereof |
| DE10054936C1 (en) * | 2000-11-06 | 2002-04-25 | Infineon Technologies Ag | Production of an integrated circuit comprises forming metallizing regions in a substrate, applying an intermediate layer, removing the layer to form an oxide film, and partially converting the oxide film to produce a conducting connection |
| US6833556B2 (en) | 2002-08-12 | 2004-12-21 | Acorn Technologies, Inc. | Insulated gate field effect transistor having passivated schottky barriers to the channel |
| US7084423B2 (en) | 2002-08-12 | 2006-08-01 | Acorn Technologies, Inc. | Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions |
| GB2526951B (en) | 2011-11-23 | 2016-04-20 | Acorn Tech Inc | Improving metal contacts to group IV semiconductors by inserting interfacial atomic monolayers |
| US9620611B1 (en) | 2016-06-17 | 2017-04-11 | Acorn Technology, Inc. | MIS contact structure with metal oxide conductor |
| US10170627B2 (en) | 2016-11-18 | 2019-01-01 | Acorn Technologies, Inc. | Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3535176A (en) * | 1968-12-19 | 1970-10-20 | Mallory & Co Inc P R | Surface conditioning of silicon for electroless nickel plating |
| JP2776826B2 (en) * | 1988-04-15 | 1998-07-16 | 株式会社日立製作所 | Semiconductor device and manufacturing method thereof |
| US5028565A (en) * | 1989-08-25 | 1991-07-02 | Applied Materials, Inc. | Process for CVD deposition of tungsten layer on semiconductor wafer |
-
1992
- 1992-11-24 WO PCT/US1992/010213 patent/WO1993011558A1/en not_active Ceased
- 1992-11-24 AU AU32267/93A patent/AU3226793A/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| WO1993011558A1 (en) | 1993-06-10 |
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