[go: up one dir, main page]

AU3014001A - Silicon crystals, in particular for solar cells and method for the production thereof - Google Patents

Silicon crystals, in particular for solar cells and method for the production thereof

Info

Publication number
AU3014001A
AU3014001A AU30140/01A AU3014001A AU3014001A AU 3014001 A AU3014001 A AU 3014001A AU 30140/01 A AU30140/01 A AU 30140/01A AU 3014001 A AU3014001 A AU 3014001A AU 3014001 A AU3014001 A AU 3014001A
Authority
AU
Australia
Prior art keywords
production
solar cells
silicon crystals
crystals
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU30140/01A
Inventor
Arthur Endros
Jorg Palm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SolarWorld Industries Deutschland GmbH
Original Assignee
Siemens Solar GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Solar GmbH filed Critical Siemens Solar GmbH
Publication of AU3014001A publication Critical patent/AU3014001A/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU30140/01A 1999-12-17 2000-12-18 Silicon crystals, in particular for solar cells and method for the production thereof Abandoned AU3014001A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19961126 1999-12-17
DE19961126A DE19961126A1 (en) 1999-12-17 1999-12-17 Silicon crystal, in particular for solar cells, and method of manufacture
PCT/EP2000/012910 WO2001044542A1 (en) 1999-12-17 2000-12-18 Silicon crystals, in particular for solar cells and method for the production thereof

Publications (1)

Publication Number Publication Date
AU3014001A true AU3014001A (en) 2001-06-25

Family

ID=7933183

Family Applications (1)

Application Number Title Priority Date Filing Date
AU30140/01A Abandoned AU3014001A (en) 1999-12-17 2000-12-18 Silicon crystals, in particular for solar cells and method for the production thereof

Country Status (3)

Country Link
AU (1) AU3014001A (en)
DE (1) DE19961126A1 (en)
WO (1) WO2001044542A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1304400A1 (en) * 2001-10-17 2003-04-23 Volker Dr. Siepe Process for producing crystal multilings with exactly symmetrical single crystal regions from melts of silicon, germanium and their alloys for applications as semiconductor-, optical- and photovoltaic substrates
DE102004004555A1 (en) 2004-01-29 2005-08-18 Siltronic Ag Process for the production of highly doped semiconductor wafers and dislocation-free, highly doped semiconductor wafers
CN105008595B (en) 2012-12-31 2018-04-13 Memc电子材料有限公司 Indium doping silicon is manufactured by vertical pulling method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI893246A7 (en) * 1988-07-07 1990-01-08 Nippon Kokan Kk FOERFARANDE OCH ANORDNING FOER FRAMSTAELLNING AV KISELKRISTALLER.
DE4343296C2 (en) * 1993-12-17 1996-09-12 Siemens Ag Method for producing a silicon semiconductor wafer with three monocrystalline regions which are tilted in relation to one another and its use
EP0733726A3 (en) * 1995-03-24 1997-05-02 Koji Izunome Growth of a silicon single crystal having a uniform longitudinal or radial distribution of impurities

Also Published As

Publication number Publication date
WO2001044542A1 (en) 2001-06-21
DE19961126A1 (en) 2001-06-21

Similar Documents

Publication Publication Date Title
AU2003220984A1 (en) Compound thin-film solar cell and process for producing the same
AU2002238953A1 (en) Solar cell and its manufacturing method
AU2001240599A1 (en) Flexible metal substrate for cis solar cells, and method for producing the same
AU2001252014A1 (en) Photovoltaic cell
AU2002300573A1 (en) Photovoltaic Device and Method for Preparing the Same
AU4303301A (en) Methods and systems for a solar cell concentrator
AU2001260067A1 (en) Method for producing a solar cell, and solar cell
AU7644600A (en) Method and device for producing solar cells
AU4274601A (en) Semiconductor layer, solar cell using it, and production methods and applications therefor
AU2002300570A1 (en) Photovoltaic Device and Method for Preparing the Same
AU2001277718A1 (en) Method for manufacturing solar cell and solar cell
AU7083398A (en) Solar battery and process for manufacturing the same
AU2003210011A1 (en) Solar cell and method of manufacturing the same
AU7771801A (en) Method for manufacturing solar cell and solar cell
AU2001252015A1 (en) Photovoltaic cell
AU2003211282A1 (en) Plate-shaped silicon manufacturing method, substrate for manufacturing plate-shaped silicon, plate-shaped silicon, solar cell using the plate-shaped silicon, and solar cell module
AU9527598A (en) Semiconductor element, especially a solar cell, and method for the production thereof
AU2003274066A1 (en) Dye-sensitised photovoltaic cells, method for the production of said photovoltaic cells and use thereof
AU2563001A (en) Power transistor module, power amplifier and method in the fabrication thereof
AU2001269469A1 (en) Single crystal wafer and solar battery cell
AU2003227840A1 (en) Multijunction photovoltaic device with shadow-free independent cells and the production method thereof
AU2003213333A1 (en) Method of purifying silicon, silicon produced by the method and solar cell
AU2003302960A1 (en) Silicon wafer for solar cell and the same manufacturing method
AU5059200A (en) Solar cell and method for producing a solar cell
AU1983499A (en) Solar cell device and method of producing the same

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase