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AU2773001A - Enhanced faraday cup for diagnostic measurements in an ion implanter - Google Patents

Enhanced faraday cup for diagnostic measurements in an ion implanter

Info

Publication number
AU2773001A
AU2773001A AU27730/01A AU2773001A AU2773001A AU 2773001 A AU2773001 A AU 2773001A AU 27730/01 A AU27730/01 A AU 27730/01A AU 2773001 A AU2773001 A AU 2773001A AU 2773001 A AU2773001 A AU 2773001A
Authority
AU
Australia
Prior art keywords
ion implanter
faraday cup
diagnostic measurements
enhanced
enhanced faraday
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU27730/01A
Inventor
Donald W Berrian
John W Vanderpot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proteros LLC
Original Assignee
MULTILEVEL METALS Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MULTILEVEL METALS Inc filed Critical MULTILEVEL METALS Inc
Publication of AU2773001A publication Critical patent/AU2773001A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/244—Detectors; Associated components or circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/244—Detection characterized by the detecting means
    • H01J2237/24405—Faraday cages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31703—Dosimetry

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measurement Of Radiation (AREA)
  • Electron Sources, Ion Sources (AREA)
AU27730/01A 2000-01-07 2001-01-08 Enhanced faraday cup for diagnostic measurements in an ion implanter Abandoned AU2773001A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17510200P 2000-01-07 2000-01-07
US60175102 2000-01-07
PCT/US2001/000579 WO2001051183A1 (en) 2000-01-07 2001-01-08 Enhanced faraday cup for diagnostic measurements in an ion implanter

Publications (1)

Publication Number Publication Date
AU2773001A true AU2773001A (en) 2001-07-24

Family

ID=22638898

Family Applications (1)

Application Number Title Priority Date Filing Date
AU27730/01A Abandoned AU2773001A (en) 2000-01-07 2001-01-08 Enhanced faraday cup for diagnostic measurements in an ion implanter

Country Status (2)

Country Link
AU (1) AU2773001A (en)
WO (1) WO2001051183A1 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10329388B4 (en) 2003-06-30 2006-12-28 Advanced Micro Devices, Inc., Sunnyvale Faraday arrangement as an ion beam measuring device for an ion implantation system and method for its operation
DE10329383B4 (en) * 2003-06-30 2006-07-27 Advanced Micro Devices, Inc., Sunnyvale Ion beam detector for ion implantation systems, Faraday containers therefor and methods for controlling the properties of an ion beam using the ion beam detector
DE60312396T2 (en) * 2003-08-01 2007-11-29 Secretary, Department Of Atomic Energy METHOD OF MEASUREMENT AND QUANTITATIVE PROFILE DETERMINATION OF LOADED PARTICLE RAYS
US6903350B1 (en) 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US7064340B1 (en) 2004-12-15 2006-06-20 Axcelis Technologies, Inc. Method and apparatus for ion beam profiling
US7417242B2 (en) * 2005-04-01 2008-08-26 Axcelis Technologies, Inc. Method of measuring ion beam position
US8008636B2 (en) * 2008-12-18 2011-08-30 Axcelis Technologies, Inc. Ion implantation with diminished scanning field effects
FR2968393B1 (en) * 2010-12-07 2015-03-06 Techniques Metallurgiques Avancees Techmeta DEVICE AND METHOD FOR ANALYZING THE DENSITY OF A BEAM OF CHARGED PARTICLES.
CN103715048B (en) * 2013-12-16 2016-05-18 中国电子科技集团公司第四十八研究所 A kind of ion implantation apparatus vertical direction ion beam angle TT&C system and measuring method
CN105895479B (en) * 2014-12-18 2019-04-23 北京中科信电子装备有限公司 A kind of ion beam detection device
CN111722263B (en) * 2020-06-15 2022-08-23 电子科技大学 Faraday cup design for high-power electron beam spot measurement
CN114779311B (en) * 2022-04-28 2025-03-21 中国科学院近代物理研究所 A kind of anti-sputtering faraday cup and its preparation method
CN115763202A (en) * 2022-11-18 2023-03-07 上海集成电路装备材料产业创新中心有限公司 Faraday cup device
US20250140520A1 (en) * 2023-11-01 2025-05-01 Axcelis Technologies, Inc. Apparatus and method for two-dimensional ion beam profiling

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5198676A (en) * 1991-09-27 1993-03-30 Eaton Corporation Ion beam profiling method and apparatus
US5738985A (en) * 1993-04-02 1998-04-14 Ribogene, Inc. Method for selective inactivation of viral replication
US6175416B1 (en) * 1996-08-06 2001-01-16 Brown University Research Foundation Optical stress generator and detector
US6049220A (en) * 1998-06-10 2000-04-11 Boxer Cross Incorporated Apparatus and method for evaluating a wafer of semiconductor material

Also Published As

Publication number Publication date
WO2001051183A1 (en) 2001-07-19

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase