AU2003228833A1 - Pseudo-nonvolatile direct-tunneling floating-gate device - Google Patents

Pseudo-nonvolatile direct-tunneling floating-gate device

Info

Publication number: AU2003228833A1
Authority: AU; Australia
Prior art keywords: pseudo; gate device; nonvolatile; direct; tunneling
Prior art date: 2002-05-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2003228833A

Inventor

Christopher J. Diorio

Todd E. Humes

John D. Hyde

Carver A. Mead

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Impinj Inc

Original Assignee

Impinj Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-05-09

Filing date

2003-04-29

Publication date

2003-11-11

2002-05-09 Priority claimed from US10/143,557 external-priority patent/US20040206999A1/en

2003-04-29 Application filed by Impinj Inc filed Critical Impinj Inc

2003-11-11 Publication of AU2003228833A1 publication Critical patent/AU2003228833A1/en

Status Abandoned legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/68—Floating-gate IGFETs
- H10D30/681—Floating-gate IGFETs having only two programming levels
- H10D30/683—Floating-gate IGFETs having only two programming levels programmed by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/60—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the control gate being a doped region, e.g. single-poly memory cell

AU2003228833A 2002-05-09 2003-04-29 Pseudo-nonvolatile direct-tunneling floating-gate device Abandoned AU2003228833A1 (en)

Applications Claiming Priority (5)

Application Number	Priority Date	Filing Date	Title
US10/143,557 US20040206999A1 (en)	2002-05-09	2002-05-09	Metal dielectric semiconductor floating gate variable capacitor
US10/143,557		2002-05-09
US10/356,645 US20040021166A1 (en)	2002-05-09	2003-01-31	Pseudo-nonvolatile direct-tunneling floating-gate device
US10/356,645		2003-01-31
PCT/US2003/013861 WO2003096432A1 (en)	2002-05-09	2003-04-29	Pseudo-nonvolatile direct-tunneling floating-gate device

Publications (1)

Publication Number	Publication Date
AU2003228833A1 true AU2003228833A1 (en)	2003-11-11

Family

ID=29423055

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2003228833A Abandoned AU2003228833A1 (en)	2002-05-09	2003-04-29	Pseudo-nonvolatile direct-tunneling floating-gate device

Country Status (3)

Country	Link
CN (1)	CN1669155A (en)
AU (1)	AU2003228833A1 (en)
WO (1)	WO2003096432A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7215251B2 (en)	2004-04-13	2007-05-08	Impinj, Inc.	Method and apparatus for controlled persistent ID flag for RFID applications
JP4881552B2 (en)	2004-09-09	2012-02-22	ルネサスエレクトロニクス株式会社	Semiconductor device
IN2012DN06399A (en) *	2010-02-07	2015-10-02	Zeno Semiconductor Inc
CN102568577B (en) *	2012-02-21	2015-01-14	无锡来燕微电子有限公司	Non-volatile memory array compatible with complementary metal oxide semiconductors (CMOS) logic technology and operating method
CN103855164A (en) *	2012-12-07	2014-06-11	旺宏电子股份有限公司	Semiconductor device, manufacturing method and operating method thereof
CN104112474B (en) *	2014-07-21	2017-12-22	中国人民解放军国防科学技术大学	A kind of memory cell of single polycrystalline nonvolatile storage
CN105632889A (en) *	2014-11-04	2016-06-01	北大方正集团有限公司	Method of manufacturing capacitor, capacitor and capacitor module
CN105790573B (en) *	2016-04-20	2018-11-23	合肥格易集成电路有限公司	A kind of charging capacitor and pump circuit
JP2020155186A (en) *	2019-03-22	2020-09-24	キオクシア株式会社	Memory device
CN116705843A (en) *	2023-08-09	2023-09-05	上海韬润半导体有限公司	GCNMOS tube and electrostatic discharge protection circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS62179162A (en) *	1986-01-31	1987-08-06	Seiko Instr & Electronics Ltd	semiconductor variable capacitance element
EP0354457B1 (en) *	1988-08-08	1994-06-22	National Semiconductor Corporation	A bipolar field-effect electrically erasable programmable read only memory cell and method of manufacture
ATE196036T1 (en) *	1995-11-21	2000-09-15	Programmable Microelectronics	NON-VOLATILE PMOS MEMORY DEVICE WITH A SINGLE POLYSILICON LAYER
US5969992A (en) *	1998-12-21	1999-10-19	Vantis Corporation	EEPROM cell using P-well for tunneling across a channel
JP4488565B2 (en) *	1999-12-03	2010-06-23	富士通株式会社	Manufacturing method of semiconductor memory device

2003
- 2003-04-29 AU AU2003228833A patent/AU2003228833A1/en not_active Abandoned
- 2003-04-29 WO PCT/US2003/013861 patent/WO2003096432A1/en not_active Ceased
- 2003-04-29 CN CN03813938.3A patent/CN1669155A/en active Pending

Also Published As

Publication number	Publication date
CN1669155A (en)	2005-09-14
WO2003096432A1 (en)	2003-11-20

Publication	Publication Date	Title
AU2003289047A1 (en)	2004-07-09	Needle-insertion device
AU2003237647A1 (en)	2003-12-02	Lid-positioning device
AU2003281272A1 (en)	2004-01-23	Fireblocking device
AU2003293034A1 (en)	2004-06-18	Trans-thermoelectric device
AU2003239887A1 (en)	2005-01-21	Floating-gate reference circuit
AU2003249333A1 (en)	2003-12-31	Device interaction
AU2003302644A1 (en)	2004-06-23	Positioning device
AU2003245720A1 (en)	2004-02-02	Electroptic device
AU2003296164A1 (en)	2004-07-29	Connection device
AU2003271698A1 (en)	2004-05-04	Displacing device
AU2003288996A1 (en)	2004-07-29	Positioning device
AU2003254589A1 (en)	2004-02-25	Connecting device
AU2003247851A1 (en)	2004-01-19	Camera-attachable device
AU2003257471A1 (en)	2004-03-29	Fixing device
AU2003228833A1 (en)	2003-11-11	Pseudo-nonvolatile direct-tunneling floating-gate device
AU2003237473A1 (en)	2003-12-22	Strained-semiconductor-on-insulator device structures
AU2003231391A1 (en)	2003-11-17	Integrating device
AU2003246290A1 (en)	2004-05-04	Box-assembling device
AU2003264142A1 (en)	2004-03-19	Connection device
AU2003255708A1 (en)	2004-02-23	Restricting device
AU2003249112A1 (en)	2004-02-02	Usb device
AU2003242918A1 (en)	2003-12-31	Module-testing device
AU2003212767A1 (en)	2003-09-29	Connection device
AU2003278638A1 (en)	2004-05-04	An improved device
AU2003246529A1 (en)	2003-12-31	Paletting device

Legal Events

Date	Code	Title	Description
2005-01-27	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase
2009-11-26	TH	Corrigenda	Free format text: IN VOL 18, NO 2, PAGE(S) 526 UNDER THE HEADING APPLICATIONS OPI - NAME INDEX UNDER THE NAME IMPINJ,INC., APPLICATION NO. 2003228833 , UNDER INID (43) CORRECT THE PUBLICATION DATE TO READ 24.11.2003