AU2003225650A8 - Drift-dominated detector - Google Patents

Drift-dominated detector

Info

Publication number: AU2003225650A8
Authority: AU; Australia
Prior art keywords: dominated; drift; detector; dominated detector
Prior art date: 2002-03-04
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2003225650A

Other versions

AU2003225650A1 (en

Inventor

Eric S Harmon

Yanning Sun

Jerry M Woodall

David B Salzman

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Yale University

Original Assignee

Yale University

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-03-04

Filing date

2003-03-04

Publication date

2003-09-22

2003-03-04 Application filed by Yale University filed Critical Yale University

2003-09-22 Publication of AU2003225650A8 publication Critical patent/AU2003225650A8/en

2003-09-22 Publication of AU2003225650A1 publication Critical patent/AU2003225650A1/en

Status Abandoned legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier

AU2003225650A 2002-03-04 2003-03-04 Drift-dominated detector Abandoned AU2003225650A1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US36182302P	2002-03-04	2002-03-04
US60/361,823		2002-03-04
PCT/US2003/006506 WO2003077283A2 (en)	2002-03-04	2003-03-04	Drift-dominated detector

Publications (2)

Publication Number	Publication Date
AU2003225650A8 true AU2003225650A8 (en)	2003-09-22
AU2003225650A1 AU2003225650A1 (en)	2003-09-22

Family

ID=27805082

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
AU2003230597A Abandoned AU2003230597A1 (en)	2002-03-04	2003-03-04	Heterojunction bipolar transistor having thinned base-collector depletion region
AU2003225650A Abandoned AU2003225650A1 (en)	2002-03-04	2003-03-04	Drift-dominated detector

Family Applications Before (1)

Application Number	Title	Priority Date	Filing Date
AU2003230597A Abandoned AU2003230597A1 (en)	2002-03-04	2003-03-04	Heterojunction bipolar transistor having thinned base-collector depletion region

Country Status (2)

Country	Link
AU (2)	AU2003230597A1 (en)
WO (2)	WO2003077284A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
EP2335290A2 (en)	2008-09-02	2011-06-22	Golan, Gady	Photoelectric structure and method of manufacturing thereof
CN102064187B (en) *	2009-11-11	2013-02-13	中国科学院半导体研究所	Silicon carbide consubstantial PIN (Personal Identification Number) microstructure material and preparation method thereof
CN105261639B (en) *	2014-07-18	2019-02-26	稳懋半导体股份有限公司	Heterojunction Bipolar Transistor
CN107104172B (en) *	2017-06-17	2019-09-20	东莞市天域半导体科技有限公司	A preparation method of SiC avalanche photodiode device epitaxial material
CN110797429B (en) *	2019-11-08	2021-02-02	中国科学院长春光学精密机械与物理研究所	Stress-controlled gallium nitride-based infrared-ultraviolet double-color light detector and preparation method thereof
CN113161415A (en) *	2020-01-22	2021-07-23	全新光电科技股份有限公司	Heterojunction bipolar transistor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5436468A (en) *	1992-03-17	1995-07-25	Fujitsu Limited	Ordered mixed crystal semiconductor superlattice device
US6159816A (en) *	1994-08-09	2000-12-12	Triquint Semiconductor Texas, Inc.	Method of fabricating a bipolar transistor
US6320212B1 (en) *	1999-09-02	2001-11-20	Hrl Laboratories, Llc.	Superlattice fabrication for InAs/GaSb/AISb semiconductor structures
US6482711B1 (en) *	1999-10-28	2002-11-19	Hrl Laboratories, Llc	InPSb/InAs BJT device and method of making
JP2002016076A (en) *	2000-06-27	2002-01-18	Nec Corp	Heterojunction bipolar transistor and method of manufacturing the same
US6448582B1 (en) *	2000-09-21	2002-09-10	Yale University	High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region
WO2002043155A2 (en) *	2000-11-27	2002-05-30	Kopin Corporation	Bipolar transistor with lattice matched base layer

2003
- 2003-03-04 WO PCT/US2003/006660 patent/WO2003077284A2/en not_active Ceased
- 2003-03-04 AU AU2003230597A patent/AU2003230597A1/en not_active Abandoned
- 2003-03-04 WO PCT/US2003/006506 patent/WO2003077283A2/en not_active Ceased
- 2003-03-04 AU AU2003225650A patent/AU2003225650A1/en not_active Abandoned

Also Published As

Publication number	Publication date
WO2003077283A2 (en)	2003-09-18
AU2003230597A1 (en)	2003-09-22
AU2003230597A8 (en)	2003-09-22
WO2003077284A3 (en)	2003-12-04
AU2003225650A1 (en)	2003-09-22
WO2003077283A3 (en)	2003-12-24
WO2003077284A2 (en)	2003-09-18

Publication	Publication Date	Title
IL163944A (en)	2009-09-01	Detector
GB2395627B (en)	2006-05-10	Detector
GB2391064B (en)	2005-10-05	Radiation detector
HUP0501096A2 (en)	2006-03-28	Fire detector
GB0220812D0 (en)	2002-10-16	Detector device
EP1542038A4 (en)	2015-05-06	Radiation detector
GB2395380B (en)	2005-10-12	Peak detector circuitry
EP1466305A4 (en)	2005-03-30	Obscuration detector
EP1505409A4 (en)	2014-09-24	Radiation detector
GB0300381D0 (en)	2003-02-05	Detector
AU2003225650A8 (en)	2003-09-22	Drift-dominated detector
GB0215611D0 (en)	2002-08-14	Intrusion detector
GB2391108B (en)	2004-11-10	Radiation detector
AU2003220666A8 (en)	2003-10-27	Light detector
AU2003255921A1 (en)	2004-03-19	Detector arrangement
AU2003268264A8 (en)	2008-12-18	Radiation detector
GB0200775D0 (en)	2002-03-06	Radiation detector
GB0225790D0 (en)	2002-12-11	Proximity detector
GB0226628D0 (en)	2002-12-24	Detector
TW542352U (en)	2003-07-11	Detector
GB2397435B (en)	2005-05-18	Ion detector
GB0205994D0 (en)	2002-04-24	Position detector
AU2003267019A8 (en)	2004-03-19	Capture detector
GB0206327D0 (en)	2002-05-01	Water detector
GB2385232B (en)	2005-01-19	Telephone detector

Legal Events

Date	Code	Title	Description
2004-12-09	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase