AU2003209862A1 - Method for obtaining metal to metal contact between a metal surface and a bonding pad. - Google Patents

Method for obtaining metal to metal contact between a metal surface and a bonding pad.

Info

Publication number: AU2003209862A1
Authority: AU; Australia
Prior art keywords: metal; bonding pad; obtaining; contact; metal surface
Prior art date: 2002-03-01
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2003209862A

Inventor

Pedro Banda

Meng Ho

Caroline Whelan

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Interuniversitair Microelektronica Centrum vzw IMEC

Original Assignee

Interuniversitair Microelektronica Centrum vzw IMEC

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-03-01

Filing date

2003-03-03

Publication date

2003-09-16

2003-03-03 Application filed by Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Interuniversitair Microelektronica Centrum vzw IMEC

2003-09-16 Publication of AU2003209862A1 publication Critical patent/AU2003209862A1/en

Status Abandoned legal-status Critical Current

Classifications

- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
- H10W72/019—
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45164—Palladium (Pd) as principal constituent
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45178—Iridium (Ir) as principal constituent
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/282—Applying non-metallic protective coatings for inhibiting the corrosion of the circuit, e.g. for preserving the solderability
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/328—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by welding
- H10W72/01515—
- H10W72/01571—
- H10W72/075—
- H10W72/07511—
- H10W72/07533—
- H10W72/332—
- H10W72/522—
- H10W72/536—
- H10W72/552—
- H10W72/5522—
- H10W72/5524—
- H10W72/5525—
- H10W72/555—
- H10W72/59—
- H10W72/923—
- H10W72/9232—
- H10W72/952—
- H10W72/983—
- H10W74/00—

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Nanotechnology (AREA)
Physics & Mathematics (AREA)
Composite Materials (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Materials Engineering (AREA)
Crystallography & Structural Chemistry (AREA)
Wire Bonding (AREA)

AU2003209862A 2002-03-01 2003-03-03 Method for obtaining metal to metal contact between a metal surface and a bonding pad. Abandoned AU2003209862A1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
US36152502P	2002-03-01	2002-03-01
US60/361,525		2002-03-01
PCT/BE2003/000038 WO2003075340A2 (en)	2002-03-01	2003-03-03	Method for obtaining metal to metal contact between a metal surface and a bonding pad.

Publications (1)

Publication Number	Publication Date
AU2003209862A1 true AU2003209862A1 (en)	2003-09-16

Family

ID=27789126

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2003209862A Abandoned AU2003209862A1 (en)	2002-03-01	2003-03-03	Method for obtaining metal to metal contact between a metal surface and a bonding pad.

Country Status (2)

Country	Link
AU (1)	AU2003209862A1 (en)
WO (1)	WO2003075340A2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US7368377B2 (en) *	2004-12-09	2008-05-06	Interuniversitair Microelektronica Centrum (Imec) Vzw	Method for selective deposition of a thin self-assembled monolayer
JP4035733B2 (en) *	2005-01-19	2008-01-23	セイコーエプソン株式会社	Manufacturing method of semiconductor device and processing method of electrical connection part
DE102006043133B4 (en) *	2006-09-14	2009-09-24	Infineon Technologies Ag	Terminal pad for contacting a device and method for its preparation
US7911061B2 (en)	2007-06-25	2011-03-22	Infineon Technologies Ag	Semiconductor device
DE102008016427B4 (en)	2008-03-31	2018-01-25	Globalfoundries Dresden Module One Limited Liability Company & Co. Kg	Wire bonding on reactive metal surfaces of a metallization of a semiconductor device by providing a protective layer
FR2977383A1 (en) *	2011-06-30	2013-01-04	St Microelectronics Grenoble 2	RECEPTION PLATE OF COPPER WIRE
DE102011081964A1 (en) *	2011-09-01	2013-03-07	Robert Bosch Gmbh	Method for bonding semiconductor devices
JP5946665B2 (en) *	2012-03-19	2016-07-06	Ｊｘ金属株式会社	Electrode for wire bonding or Au stud bump
US8916448B2 (en) *	2013-01-09	2014-12-23	International Business Machines Corporation	Metal to metal bonding for stacked (3D) integrated circuits
DE112014000872B4 (en) *	2013-02-18	2023-07-20	Autonetworks Technologies, Ltd.	Electrical connection structure and terminal
DE102016116451A1 (en) *	2016-09-02	2018-03-08	Osram Opto Semiconductors Gmbh	Electrically conductive contact element for an optoelectronic component, optoelectronic component and method for producing an optoelectronic component
CN118507368A (en) *	2024-07-18	2024-08-16	芯联集成电路制造股份有限公司	Semiconductor device and preparation method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5264731A (en) *	1987-06-25	1993-11-23	Matsushita Electric Industrial Co., Ltd.	Method for fabricating semiconductor device
DE19733731A1 (en) *	1997-08-04	1999-02-25	Siemens Ag	Integrated electrical circuit with passivation layer
US6323131B1 (en) *	1998-06-13	2001-11-27	Agere Systems Guardian Corp.	Passivated copper surfaces

2003
- 2003-03-03 AU AU2003209862A patent/AU2003209862A1/en not_active Abandoned
- 2003-03-03 WO PCT/BE2003/000038 patent/WO2003075340A2/en not_active Ceased

Also Published As

Publication number	Publication date
WO2003075340A2 (en)	2003-09-12
WO2003075340A3 (en)	2004-03-18

Publication	Publication Date	Title
AU2003218145A1 (en)	2003-09-29	Semiconductor device having a bond pad and method therefor
EP1468785B8 (en)	2015-04-22	Polishing pad and production method thereof
SG118240A1 (en)	2006-01-27	Structure and method for fabricating a bond pad structure
AU2003236328A1 (en)	2003-10-13	Polishing pad and semiconductor substrate manufacturing method using the polishing pad
AU2003218146A1 (en)	2003-09-29	Semiconductor device having a wire bond pad and method therefor
WO2004007826A3 (en)	2004-04-29	Cosmetic pad and method for the production thereof
AU2003262808A1 (en)	2004-06-03	Assymmetric bifurcated crown
AU2003291472A1 (en)	2004-06-18	Semiconductor device having a bond pad and method for its fabrication
AU2003231991A1 (en)	2003-10-27	Surface structure for enhancing catalytic reactivity
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AU2003209862A1 (en)	2003-09-16	Method for obtaining metal to metal contact between a metal surface and a bonding pad.
AU2003299092A1 (en)	2004-04-19	Method and device for creating internal compression stresses within the surface of workpieces
AU2003301756A1 (en)	2004-05-25	Forming die for contact lens and contact lens manufacturing method using the forming die
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AU2003284146A1 (en)	2004-06-23	Solder bond pad with a convex shape
AU2001292785A1 (en)	2002-04-15	Method for enhancing the solderability of a surface
SG118205A1 (en)	2006-01-27	Bonding pad metal layer geometry design
AU2003276712A1 (en)	2004-05-25	Composition for polishing metal, polishing method for metal layer, and production method for wafer
MY140036A (en)	2009-11-30	Capillary for wire bonding
AU2003244351A1 (en)	2003-09-02	Pen-input device surface member, and pen-input device
SG117430A1 (en)	2005-12-29	Method for flip-chip bonding
AU2003286496A8 (en)	2004-05-04	Isostatic pressure assisted wafer bonding method
AU2003269833A1 (en)	2004-05-04	Method and device for structuring a surface by means of brushes
AU2003259691A1 (en)	2004-04-30	An enhanced diamond and method for making the same

Legal Events

Date	Code	Title	Description
2004-11-18	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase