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AU2003296081A1 - Pattern forming method, electronic device manufacturing method, electronic device, and photomask - Google Patents

Pattern forming method, electronic device manufacturing method, electronic device, and photomask

Info

Publication number
AU2003296081A1
AU2003296081A1 AU2003296081A AU2003296081A AU2003296081A1 AU 2003296081 A1 AU2003296081 A1 AU 2003296081A1 AU 2003296081 A AU2003296081 A AU 2003296081A AU 2003296081 A AU2003296081 A AU 2003296081A AU 2003296081 A1 AU2003296081 A1 AU 2003296081A1
Authority
AU
Australia
Prior art keywords
electronic device
photomask
pattern forming
forming method
device manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003296081A
Inventor
Naomasa Shiraishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of AU2003296081A1 publication Critical patent/AU2003296081A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H10W20/089—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • H10P50/73—

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
AU2003296081A 2002-12-27 2003-12-24 Pattern forming method, electronic device manufacturing method, electronic device, and photomask Abandoned AU2003296081A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002-381798 2002-12-27
JP2002381798A JP2006156422A (en) 2002-12-27 2002-12-27 Pattern forming method, electronic device manufacturing method, and electronic device
PCT/JP2003/016545 WO2004061918A1 (en) 2002-12-27 2003-12-24 Pattern forming method, electronic device manufacturing method, electronic device, and photomask

Publications (1)

Publication Number Publication Date
AU2003296081A1 true AU2003296081A1 (en) 2004-07-29

Family

ID=32708514

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003296081A Abandoned AU2003296081A1 (en) 2002-12-27 2003-12-24 Pattern forming method, electronic device manufacturing method, electronic device, and photomask

Country Status (4)

Country Link
JP (1) JP2006156422A (en)
AU (1) AU2003296081A1 (en)
TW (1) TW200428132A (en)
WO (1) WO2004061918A1 (en)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4540327B2 (en) * 2003-11-06 2010-09-08 ルネサスエレクトロニクス株式会社 Photomask pattern forming method
JP5162254B2 (en) 2005-02-10 2013-03-13 エーエスエムエル ネザーランズ ビー．ブイ． Immersion lithography system and device manufacturing method
JP4938019B2 (en) * 2006-09-28 2012-05-23 パイオニア株式会社 Oxide material, patterning substrate, pattern formation method, imprint transfer mold manufacturing method, recording medium manufacturing method, imprint transfer mold and recording medium
JP4554665B2 (en) 2006-12-25 2010-09-29 富士フイルム株式会社 PATTERN FORMATION METHOD, POSITIVE RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED FOR THE PATTERN FORMATION METHOD, NEGATIVE DEVELOPMENT SOLUTION USED FOR THE PATTERN FORMATION METHOD, AND NEGATIVE DEVELOPMENT RINSE SOLUTION USED FOR THE PATTERN FORMATION METHOD
US8530148B2 (en) 2006-12-25 2013-09-10 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
US8637229B2 (en) 2006-12-25 2014-01-28 Fujifilm Corporation Pattern forming method, resist composition for multiple development used in the pattern forming method, developer for negative development used in the pattern forming method, and rinsing solution for negative development used in the pattern forming method
JP2008185970A (en) 2007-01-31 2008-08-14 Renesas Technology Corp Pattern forming method, manufacturing method of electronic device, and electronic device
EP1980911A3 (en) 2007-04-13 2009-06-24 FUJIFILM Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
EP2138898B1 (en) 2007-04-13 2014-05-21 FUJIFILM Corporation Method for pattern formation, and use of resist composition in said method
US8603733B2 (en) 2007-04-13 2013-12-10 Fujifilm Corporation Pattern forming method, and resist composition, developer and rinsing solution used in the pattern forming method
US8034547B2 (en) 2007-04-13 2011-10-11 Fujifilm Corporation Pattern forming method, resist composition to be used in the pattern forming method, negative developing solution to be used in the pattern forming method and rinsing solution for negative development to be used in the pattern forming method
US8476001B2 (en) 2007-05-15 2013-07-02 Fujifilm Corporation Pattern forming method
WO2008140119A1 (en) 2007-05-15 2008-11-20 Fujifilm Corporation Method for pattern formation
WO2008153109A1 (en) 2007-06-12 2008-12-18 Fujifilm Corporation Resist composition for negative development and method of forming pattern therewith
US8617794B2 (en) 2007-06-12 2013-12-31 Fujifilm Corporation Method of forming patterns
US8632942B2 (en) 2007-06-12 2014-01-21 Fujifilm Corporation Method of forming patterns
EP2157477B1 (en) 2007-06-12 2014-08-06 FUJIFILM Corporation Use of a resist composition for negative working-type development, and method for pattern formation using the resist composition
JP4617337B2 (en) 2007-06-12 2011-01-26 富士フイルム株式会社 Pattern formation method
JP4590431B2 (en) 2007-06-12 2010-12-01 富士フイルム株式会社 Pattern formation method
US8187978B2 (en) 2007-07-27 2012-05-29 Freescale Semiconductor, Inc. Method of forming openings in a semiconductor device and semiconductor device
JP5601884B2 (en) 2009-06-04 2014-10-08 富士フイルム株式会社 Pattern forming method and pattern using actinic ray or radiation sensitive resin composition
JP5634115B2 (en) 2009-06-17 2014-12-03 富士フイルム株式会社 Pattern forming method, chemically amplified resist composition, and resist film
JP5624906B2 (en) 2010-03-23 2014-11-12 富士フイルム株式会社 Pattern formation method, chemically amplified resist composition, and resist film
TWI638225B (en) * 2017-08-09 2018-10-11 華邦電子股份有限公司 Methods for forming a photo-mask and a semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06252031A (en) * 1993-02-28 1994-09-09 Sony Corp Aligner and exposure method
JPH11214280A (en) * 1998-01-20 1999-08-06 Nec Corp Pattern formation
JP2000315647A (en) * 1999-05-06 2000-11-14 Mitsubishi Electric Corp Method of forming resist pattern

Also Published As

Publication number Publication date
WO2004061918A1 (en) 2004-07-22
TW200428132A (en) 2004-12-16
JP2006156422A (en) 2006-06-15

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase