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AU2003292584A1 - Light-emitting device, method for manufacturing same, and led lamp - Google Patents

Light-emitting device, method for manufacturing same, and led lamp

Info

Publication number
AU2003292584A1
AU2003292584A1 AU2003292584A AU2003292584A AU2003292584A1 AU 2003292584 A1 AU2003292584 A1 AU 2003292584A1 AU 2003292584 A AU2003292584 A AU 2003292584A AU 2003292584 A AU2003292584 A AU 2003292584A AU 2003292584 A1 AU2003292584 A1 AU 2003292584A1
Authority
AU
Australia
Prior art keywords
light
emitting device
led lamp
manufacturing same
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003292584A
Inventor
Takaki Yasuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Publication of AU2003292584A1 publication Critical patent/AU2003292584A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H10P14/24—
    • H10P14/271—
    • H10P14/2901—
    • H10P14/2921—
    • H10P14/2925—
    • H10P14/3416—
AU2003292584A 2002-12-20 2003-12-19 Light-emitting device, method for manufacturing same, and led lamp Abandoned AU2003292584A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2002369092A JP4201079B2 (en) 2002-12-20 2002-12-20 LIGHT EMITTING ELEMENT, MANUFACTURING METHOD THEREOF, AND LED LAMP
JP2002-369092 2002-12-20
PCT/JP2003/016330 WO2004057682A1 (en) 2002-12-20 2003-12-19 Light-emitting device, method for manufacturing same, and led lamp

Publications (1)

Publication Number Publication Date
AU2003292584A1 true AU2003292584A1 (en) 2004-07-14

Family

ID=32677134

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003292584A Abandoned AU2003292584A1 (en) 2002-12-20 2003-12-19 Light-emitting device, method for manufacturing same, and led lamp

Country Status (7)

Country Link
JP (1) JP4201079B2 (en)
KR (1) KR100802452B1 (en)
CN (1) CN100361322C (en)
AU (1) AU2003292584A1 (en)
DE (1) DE10393949T5 (en)
TW (1) TWI241032B (en)
WO (1) WO2004057682A1 (en)

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KR100649494B1 (en) 2004-08-17 2006-11-24 삼성전기주식회사 LED manufacturing method for surface-treating light emitting diode substrate using laser and light emitting diode manufactured by this method
JP2006066442A (en) * 2004-08-24 2006-03-09 Kyocera Corp Single crystal sapphire substrate for semiconductor device, manufacturing method thereof, and semiconductor light emitting device
CN100461471C (en) * 2004-11-11 2009-02-11 晶元光电股份有限公司 High-brightness light-emitting element and manufacturing method thereof
US20070145386A1 (en) 2004-12-08 2007-06-28 Samsung Electro-Mechanics Co., Ltd. Semiconductor light emitting device and method of manufacturing the same
KR100624449B1 (en) 2004-12-08 2006-09-18 삼성전기주식회사 Light emitting device including an uneven structure and method of manufacturing the same
JP5082278B2 (en) 2005-05-16 2012-11-28 ソニー株式会社 Light emitting diode manufacturing method, integrated light emitting diode manufacturing method, and nitride III-V compound semiconductor growth method
KR20070081184A (en) 2006-02-10 2007-08-16 삼성전기주식회사 Nitride-based semiconductor light emitting device and its manufacturing method
KR20080104148A (en) * 2006-02-17 2008-12-01 더 리전츠 오브 더 유니버시티 오브 캘리포니아 Growth method of semipolar (Ａｌ, イ ｎ, Ｇａ, Ｂ) N optoelectronic devices
TWI288491B (en) * 2006-03-02 2007-10-11 Nat Univ Chung Hsing High extraction efficiency of solid-state light emitting device
KR100786777B1 (en) * 2006-03-28 2007-12-18 전북대학교산학협력단 Method of manufacturing a semiconductor structure
DE102007004302A1 (en) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Semiconductor chip for light emitting diode, has support with two support surfaces, and semiconductor layer sequence has active area for generation of radiation
KR20090082923A (en) * 2006-11-15 2009-07-31 더 리전츠 오브 더 유니버시티 오브 캘리포니아 High light extraction efficiency light emitting diode (led) through multiple extractors
CN100595936C (en) * 2007-01-31 2010-03-24 李崇华 Micro-optical substrate with layered micro-optical structure and light emitting diode
JP5176334B2 (en) * 2007-02-01 2013-04-03 日亜化学工業株式会社 Semiconductor light emitting device
KR101364168B1 (en) * 2007-03-20 2014-02-18 서울바이오시스 주식회사 Method of fabricating substrates for light emitting device
JP4804444B2 (en) * 2007-10-31 2011-11-02 泰谷光電科技股▲ふん▼有限公司 Structure of light emitting diode and manufacturing method thereof
CN101488545B (en) * 2008-01-18 2011-10-05 泰谷光电科技股份有限公司 Method for roughening the surface of light-emitting diode substrate
CN101533881B (en) * 2008-03-11 2012-05-02 广镓光电股份有限公司 Semiconductor light emitting component
CN101621097B (en) * 2008-07-04 2011-12-28 泰谷光电科技股份有限公司 Photoelectric device and manufacturing method thereof
CN101661981B (en) * 2008-08-29 2014-10-22 广镓光电股份有限公司 Base plate for making luminous element and luminous element made by same
CN102024885A (en) * 2009-09-10 2011-04-20 鸿富锦精密工业（深圳）有限公司 Nitride semiconductor light-emitting component
JP5603085B2 (en) * 2010-01-06 2014-10-08 株式会社ディスコ Manufacturing method of optical device wafer
JP2010135855A (en) * 2010-03-16 2010-06-17 Showa Denko Kk Method for manufacturing light-emitting element, and the light-emitting element
JP2010147505A (en) * 2010-03-16 2010-07-01 Showa Denko Kk Method of manufacturing light-emitting device, and light-emitting device
US8217488B2 (en) * 2010-07-19 2012-07-10 Walsin Lihwa Corporation GaN light emitting diode and method for increasing light extraction on GaN light emitting diode via sapphire shaping
CN101937967B (en) * 2010-09-14 2012-07-04 映瑞光电科技(上海)有限公司 Light-emitting diode, light-emitting device and manufacturing method thereof
CN102130271A (en) * 2010-09-28 2011-07-20 映瑞光电科技(上海)有限公司 LED (light-emitting diode) chip packaging structure and white light LED light-emitting device
CN102130249B (en) * 2010-09-28 2013-05-01 映瑞光电科技(上海)有限公司 Super-luminance light-emitting diode and manufacturing method thereof
JP5246235B2 (en) * 2010-09-30 2013-07-24 豊田合成株式会社 Group III nitride semiconductor light emitting device manufacturing method
JP5246236B2 (en) * 2010-09-30 2013-07-24 豊田合成株式会社 Group III nitride semiconductor light emitting device manufacturing method
CN103189548A (en) * 2010-10-29 2013-07-03 加利福尼亚大学董事会 Ammonothermal growth of group III nitride crystals on seed crystals having at least two surfaces forming acute, right or obtuse angles to each other
CN102324460A (en) * 2011-10-24 2012-01-18 佛山市国星光电股份有限公司 LED (Light Emitting Diode) packaging device based on graphical packaging substrate
JP5811009B2 (en) 2012-03-30 2015-11-11 豊田合成株式会社 Group III nitride semiconductor manufacturing method and group III nitride semiconductor
CN103545170A (en) * 2012-07-13 2014-01-29 华夏光股份有限公司 Semiconductor device and manufacturing method thereof
JP2014034481A (en) * 2012-08-07 2014-02-24 Hitachi Metals Ltd Sapphire substrate for growing gallium nitride crystal, manufacturing method of gallium nitride crystal, and gallium nitride crystal
EP3043392A1 (en) * 2012-10-12 2016-07-13 Asahi Kasei E-materials Corporation Optical substrate, semiconductor light emitting device and manufacturing method of the same
KR20140085918A (en) * 2012-12-28 2014-07-08 서울바이오시스 주식회사 Light emitting device and method of fabricating the same
JP6020357B2 (en) 2013-05-31 2016-11-02 豊田合成株式会社 Group III nitride semiconductor manufacturing method and group III nitride semiconductor
EP3026693B1 (en) * 2013-07-26 2021-06-09 Stanley Electric Co., Ltd. Pretreatment method for base substrate, and method for manufacturing laminate using pretreated base substrate
CN105280776B (en) * 2014-05-30 2019-01-01 日亚化学工业株式会社 Nitride semiconductor device and its manufacturing method
US20170186912A1 (en) * 2014-06-03 2017-06-29 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting element
CN104752586A (en) * 2015-03-27 2015-07-01 华南理工大学 LED graphic optimized packaging substrate, LED packaging member and manufacture method thereof
TWI778010B (en) * 2017-01-26 2022-09-21 晶元光電股份有限公司 Light-emitting device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3439063B2 (en) * 1997-03-24 2003-08-25 三洋電機株式会社 Semiconductor light emitting device and light emitting lamp
JP4032538B2 (en) * 1998-11-26 2008-01-16 ソニー株式会社 Semiconductor thin film and semiconductor device manufacturing method
JP3633447B2 (en) * 1999-09-29 2005-03-30 豊田合成株式会社 Group III nitride compound semiconductor device
JP3556916B2 (en) 2000-09-18 2004-08-25 三菱電線工業株式会社 Manufacturing method of semiconductor substrate
JP3595277B2 (en) * 2001-03-21 2004-12-02 三菱電線工業株式会社 GaN based semiconductor light emitting diode
JP3595276B2 (en) * 2001-03-21 2004-12-02 三菱電線工業株式会社 UV light emitting element
JP4055503B2 (en) * 2001-07-24 2008-03-05 日亜化学工業株式会社 Semiconductor light emitting device

Also Published As

Publication number Publication date
JP2004200523A (en) 2004-07-15
JP4201079B2 (en) 2008-12-24
CN1742381A (en) 2006-03-01
WO2004057682A1 (en) 2004-07-08
TWI241032B (en) 2005-10-01
KR100802452B1 (en) 2008-02-13
CN100361322C (en) 2008-01-09
DE10393949T5 (en) 2011-12-01
TW200418207A (en) 2004-09-16
KR20050091736A (en) 2005-09-15

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase