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AU2003292427A1 - Annealing method and device - Google Patents

Annealing method and device

Info

Publication number
AU2003292427A1
AU2003292427A1 AU2003292427A AU2003292427A AU2003292427A1 AU 2003292427 A1 AU2003292427 A1 AU 2003292427A1 AU 2003292427 A AU2003292427 A AU 2003292427A AU 2003292427 A AU2003292427 A AU 2003292427A AU 2003292427 A1 AU2003292427 A1 AU 2003292427A1
Authority
AU
Australia
Prior art keywords
annealing method
annealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003292427A
Inventor
Carl John Anthony
Paul Peter Donohue
Michael Andrew Todd
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qinetiq Ltd
Original Assignee
Qinetiq Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qinetiq Ltd filed Critical Qinetiq Ltd
Publication of AU2003292427A1 publication Critical patent/AU2003292427A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H10P14/6542
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/128Annealing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H10P14/6544
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product
AU2003292427A 2002-12-18 2003-12-16 Annealing method and device Abandoned AU2003292427A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0229427.0 2002-12-18
GB0229427A GB2396481A (en) 2002-12-18 2002-12-18 Laser annealing method and device
PCT/GB2003/005499 WO2004055880A1 (en) 2002-12-18 2003-12-16 Annealing method and device

Publications (1)

Publication Number Publication Date
AU2003292427A1 true AU2003292427A1 (en) 2004-07-09

Family

ID=9949871

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003292427A Abandoned AU2003292427A1 (en) 2002-12-18 2003-12-16 Annealing method and device

Country Status (3)

Country Link
AU (1) AU2003292427A1 (en)
GB (1) GB2396481A (en)
WO (1) WO2004055880A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7622374B2 (en) 2005-12-29 2009-11-24 Infineon Technologies Ag Method of fabricating an integrated circuit
CN108559954B (en) * 2018-03-30 2020-01-21 湖北大学 Preparation method of negative thermal expansion lead zirconate titanate film
US20240074207A1 (en) * 2022-08-25 2024-02-29 International Business Machines Corporation Localized anneal of ferroelectric dielectric
CN116261337B (en) * 2023-05-15 2023-12-22 宁德时代新能源科技股份有限公司 Perovskite battery, photovoltaic module, photovoltaic power generation system and electric equipment

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5310990A (en) * 1991-06-03 1994-05-10 The United Stated Of America As Represented By The Secretary Of The Navy Method of laser processing ferroelectric materials
GB2347788A (en) * 1999-03-06 2000-09-13 Secr Defence Forming devices such as ferroelectric infra-red sensors by annealing
US6887716B2 (en) * 2000-12-20 2005-05-03 Fujitsu Limited Process for producing high quality PZT films for ferroelectric memory integrated circuits
JP4135857B2 (en) * 2001-03-27 2008-08-20 独立行政法人産業技術総合研究所 Infrared sensor manufacturing method
US20020140012A1 (en) * 2001-03-30 2002-10-03 Motorola, Inc. Semiconductor structures and devices for detecting far-infrared light and methods for fabricating same

Also Published As

Publication number Publication date
GB2396481A (en) 2004-06-23
WO2004055880A1 (en) 2004-07-01
GB0229427D0 (en) 2003-01-22

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase