[go: up one dir, main page]

AU2003267995A1 - Atomic layer deposition of multi-metallic precursors - Google Patents

Atomic layer deposition of multi-metallic precursors

Info

Publication number
AU2003267995A1
AU2003267995A1 AU2003267995A AU2003267995A AU2003267995A1 AU 2003267995 A1 AU2003267995 A1 AU 2003267995A1 AU 2003267995 A AU2003267995 A AU 2003267995A AU 2003267995 A AU2003267995 A AU 2003267995A AU 2003267995 A1 AU2003267995 A1 AU 2003267995A1
Authority
AU
Australia
Prior art keywords
layer deposition
atomic layer
metallic precursors
precursors
metallic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003267995A
Other versions
AU2003267995A8 (en
Inventor
Sang-In Lee
Yoshihide Senzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aviza Technology Inc
Original Assignee
ASML US Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML US Inc filed Critical ASML US Inc
Publication of AU2003267995A8 publication Critical patent/AU2003267995A8/en
Publication of AU2003267995A1 publication Critical patent/AU2003267995A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H10P14/6339—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/308—Oxynitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • H10P14/432—
    • H10P14/668—
    • H10P14/6687—
    • H10P14/693—
    • H10P14/6932—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
AU2003267995A 2002-07-18 2003-07-16 Atomic layer deposition of multi-metallic precursors Abandoned AU2003267995A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US39702902P 2002-07-18 2002-07-18
US60/397,029 2002-07-18
PCT/US2003/022236 WO2004010469A2 (en) 2002-07-18 2003-07-16 Atomic layer deposition of multi-metallic precursors

Publications (2)

Publication Number Publication Date
AU2003267995A8 AU2003267995A8 (en) 2004-02-09
AU2003267995A1 true AU2003267995A1 (en) 2004-02-09

Family

ID=30770978

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003267995A Abandoned AU2003267995A1 (en) 2002-07-18 2003-07-16 Atomic layer deposition of multi-metallic precursors

Country Status (5)

Country Link
EP (1) EP1523763A4 (en)
JP (1) JP2005533390A (en)
AU (1) AU2003267995A1 (en)
TW (1) TW200402479A (en)
WO (1) WO2004010469A2 (en)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200408323A (en) * 2002-08-18 2004-05-16 Asml Us Inc Atomic layer deposition of high k metal oxides
CN100517608C (en) * 2004-02-28 2009-07-22 三星电子株式会社 Amorphous dielectric thin film and manufacturing method thereof
US7098150B2 (en) * 2004-03-05 2006-08-29 Air Liquide America L.P. Method for novel deposition of high-k MSiON dielectric films
JP4595702B2 (en) * 2004-07-15 2010-12-08 東京エレクトロン株式会社 Film forming method, film forming apparatus, and storage medium
TW200625431A (en) * 2004-08-16 2006-07-16 Aviza Tech Inc Direct liquid injection system and method for forming multi-component dielectric films
US7563727B2 (en) * 2004-11-08 2009-07-21 Intel Corporation Low-k dielectric layer formed from aluminosilicate precursors
WO2007000186A1 (en) * 2005-06-29 2007-01-04 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Deposition method of ternary films
JP2007113041A (en) * 2005-10-19 2007-05-10 Hitachi Kokusai Electric Inc Substrate processing equipment
WO2007140813A1 (en) 2006-06-02 2007-12-13 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method of forming high-k dielectric films based on novel titanium, zirconium, and hafnium precursors and their use for semiconductor manufacturing
US7795160B2 (en) 2006-07-21 2010-09-14 Asm America Inc. ALD of metal silicate films
US8017182B2 (en) * 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
WO2009106433A1 (en) 2008-02-27 2009-09-03 L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Method for forming a titanium-containing layer on a substrate using an atomic layer deposition (ald) process
TWI467045B (en) 2008-05-23 2015-01-01 Sigma Aldrich Co High-k dielectric films and methods of producing high-k dielectric films using cerium-based precursors
TW200949006A (en) * 2008-05-23 2009-12-01 Sigma Aldrich Co High-k dielectric films and methods of producing using titanium-based precursors
TW200949939A (en) * 2008-05-23 2009-12-01 Sigma Aldrich Co High-k dielectric films and methods of producing using titanium-based β -diketonate precursors
KR200457336Y1 (en) 2009-12-29 2011-12-15 주식회사 케이씨텍 Showerhead Unit for Atomic Layer Deposition Equipment
US8952355B2 (en) 2011-09-29 2015-02-10 Intel Corporation Electropositive metal containing layers for semiconductor applications
US9238865B2 (en) 2012-02-06 2016-01-19 Asm Ip Holding B.V. Multiple vapor sources for vapor deposition
WO2015147843A1 (en) * 2014-03-27 2015-10-01 Intel Corporation Precursor and process design for photo-assisted metal atomic layer deposition (ald) and chemical vapor deposition (cvd)
KR101541463B1 (en) 2014-08-22 2015-08-19 연세대학교 산학협력단 Metal sulfide alloy forming method and an electronic device comprising the metal sulfide alloy
US9663547B2 (en) 2014-12-23 2017-05-30 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Silicon- and Zirconium-containing compositions for vapor deposition of Zirconium-containing films
US9499571B2 (en) 2014-12-23 2016-11-22 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Germanium- and zirconium-containing compositions for vapor deposition of zirconium-containing films
US10106568B2 (en) 2016-10-28 2018-10-23 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Hafnium-containing film forming compositions for vapor deposition of hafnium-containing films
US11788190B2 (en) 2019-07-05 2023-10-17 Asm Ip Holding B.V. Liquid vaporizer
US12359309B2 (en) 2019-08-26 2025-07-15 Entegris, Inc. Group VI metal deposition process
US11946136B2 (en) 2019-09-20 2024-04-02 Asm Ip Holding B.V. Semiconductor processing device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6503561B1 (en) * 1999-07-08 2003-01-07 Air Products And Chemicals, Inc. Liquid precursor mixtures for deposition of multicomponent metal containing materials
US6203613B1 (en) * 1999-10-19 2001-03-20 International Business Machines Corporation Atomic layer deposition with nitrate containing precursors
US20020013487A1 (en) * 2000-04-03 2002-01-31 Norman John Anthony Thomas Volatile precursors for deposition of metals and metal-containing films
US6537613B1 (en) * 2000-04-10 2003-03-25 Air Products And Chemicals, Inc. Process for metal metalloid oxides and nitrides with compositional gradients
EP1256638B1 (en) * 2001-05-07 2008-03-26 Samsung Electronics Co., Ltd. Method of forming a multi-components thin film
JP2002343790A (en) * 2001-05-21 2002-11-29 Nec Corp Vapor deposition method of metal compound thin film and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
AU2003267995A8 (en) 2004-02-09
EP1523763A2 (en) 2005-04-20
JP2005533390A (en) 2005-11-04
TW200402479A (en) 2004-02-16
WO2004010469A2 (en) 2004-01-29
WO2004010469A3 (en) 2004-07-08
EP1523763A4 (en) 2008-12-24

Similar Documents

Publication Publication Date Title
AU2003267995A1 (en) Atomic layer deposition of multi-metallic precursors
AU2003282836A1 (en) Atomic layer deposition of noble metals
AU2003260042A1 (en) Atomic layer deposition of cmos gates
AU2003259879A1 (en) Atomic layer deposition of high k metal silicates
AU2003254047A1 (en) Atomic layer deposition of high k dielectric films
AU2003263872A8 (en) Atomic layer deposition of high k metal oxides
TWI319442B (en) Method of depositing thin layer using atomic layer deposition
GB0323295D0 (en) Deposition of thin films
AU2003267107A1 (en) Precursor material delivery system for atomic layer deposition
EP1595004A4 (en) Method of depositing dlc on substrate
AU2003255924A1 (en) Method of electrostatic deposition
AU2003287156A1 (en) Two-step atomic layer deposition of copper layers
AU2002326709A1 (en) Utilizing atomic layer deposition for programmable device
GB2429202B (en) Deposition of layers on substrates
EP1492159A4 (en) Method of depositing cvd thin film
GB2426808B (en) Diaphragm valve for atomic layer deposition
AU2003233581A8 (en) Method of depositing an oxide film by chemical vapor deposition
GB2415967B (en) Precursor material delivery system for atomic layer deposition
AU2003255391A1 (en) Mechanical deposition process
GB0306027D0 (en) Precursors for chemical vapour deposition
AU2003238061A1 (en) Method of forming a thin film using atomic layer deposition(ald)
AU2003219146A1 (en) Zinc-nickel coating layer
AU2003236803A1 (en) Conversion layer for bases made of zinc or zinc alloys
AU2002365100A1 (en) Lacquer layer deposition
AU2001247709A1 (en) Electroless deposition of cu-in-ga-se film

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase