AU2003262016A1 - Semiconductor laser - Google Patents

Semiconductor laser

Info

Publication number: AU2003262016A1
Authority: AU; Australia
Prior art keywords: semiconductor laser; laser; semiconductor
Prior art date: 2002-09-20
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Abandoned

Application number

AU2003262016A

Inventor

Hideyoshi Horie

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Mitsubishi Chemical Corp

Original Assignee

Mitsubishi Chemical Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2002-09-20

Filing date

2003-09-09

Publication date

2004-04-08

2003-09-09 Application filed by Mitsubishi Chemical Corp filed Critical Mitsubishi Chemical Corp

2004-04-08 Publication of AU2003262016A1 publication Critical patent/AU2003262016A1/en

Status Abandoned legal-status Critical Current

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field

Landscapes

Physics & Mathematics (AREA)
Geometry (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Optics & Photonics (AREA)
Semiconductor Lasers (AREA)

AU2003262016A 2002-09-20 2003-09-09 Semiconductor laser Abandoned AU2003262016A1 (en)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
JP2002275917		2002-09-20
JP2002-275917		2002-09-20
PCT/JP2003/011488 WO2004027950A1 (en)	2002-09-20	2003-09-09	Semiconductor laser

Publications (1)

Publication Number	Publication Date
AU2003262016A1 true AU2003262016A1 (en)	2004-04-08

Family

ID=32025048

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
AU2003262016A Abandoned AU2003262016A1 (en)	2002-09-20	2003-09-09	Semiconductor laser

Country Status (4)

Country	Link
JP (1)	JP4345673B2 (en)
CN (1)	CN100359772C (en)
AU (1)	AU2003262016A1 (en)
WO (1)	WO2004027950A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JP2009182145A (en)	2008-01-30	2009-08-13	Sumitomo Electric Ind Ltd	Semiconductor optical device
JP2010021430A (en)	2008-07-11	2010-01-28	Sumitomo Electric Ind Ltd	Semiconductor photonic element
JP2011114214A (en) *	2009-11-27	2011-06-09	Mitsubishi Electric Corp	Semiconductor laser device
CN104515740B (en) *	2013-09-17	2017-07-07	中央研究院	Non-calibration type detection system and detection method thereof
JP6496906B2 (en) *	2013-10-10	2019-04-10	パナソニックＩｐマネジメント株式会社	Semiconductor light emitting device
CN109672088A (en) *	2018-12-29	2019-04-23	江西德瑞光电技术有限责任公司	A kind of semiconductor laser chip manufacturing method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH0680859B2 (en) *	1984-12-27	1994-10-12	ソニー株式会社	Semiconductor laser
JPS63208290A (en) *	1987-02-25	1988-08-29	Hitachi Ltd	semiconductor laser equipment
US5656832A (en) *	1994-03-09	1997-08-12	Kabushiki Kaisha Toshiba	Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
JP3325380B2 (en) *	1994-03-09	2002-09-17	株式会社東芝	Semiconductor light emitting device and method of manufacturing the same
JPH09232692A (en) *	1996-02-16	1997-09-05	Lucent Technol Inc	Semiconductor laser device
JP2001210910A (en) *	1999-11-17	2001-08-03	Mitsubishi Electric Corp	Semiconductor laser

2003
- 2003-09-09 CN CNB038253046A patent/CN100359772C/en not_active Expired - Fee Related
- 2003-09-09 JP JP2004537546A patent/JP4345673B2/en not_active Expired - Fee Related
- 2003-09-09 AU AU2003262016A patent/AU2003262016A1/en not_active Abandoned
- 2003-09-09 WO PCT/JP2003/011488 patent/WO2004027950A1/en not_active Ceased

Also Published As

Publication number	Publication date
CN100359772C (en)	2008-01-02
CN1701480A (en)	2005-11-23
JP4345673B2 (en)	2009-10-14
JPWO2004027950A1 (en)	2006-01-19
WO2004027950A1 (en)	2004-04-01

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Legal Events

Date	Code	Title	Description
2005-06-09	MK6	Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase