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AU2003261317A1 - Scatterometry alignment for imprint lithography - Google Patents

Scatterometry alignment for imprint lithography

Info

Publication number
AU2003261317A1
AU2003261317A1 AU2003261317A AU2003261317A AU2003261317A1 AU 2003261317 A1 AU2003261317 A1 AU 2003261317A1 AU 2003261317 A AU2003261317 A AU 2003261317A AU 2003261317 A AU2003261317 A AU 2003261317A AU 2003261317 A1 AU2003261317 A1 AU 2003261317A1
Authority
AU
Australia
Prior art keywords
scatterometry
alignment
imprint lithography
imprint
lithography
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003261317A
Other versions
AU2003261317A8 (en
Inventor
Byung-Jin Choi
Ian Mcmackin
Norman E. Schumaker
Sidlgata V. Sreenivasan
Ronald D. Voisin
Michael P.C. Watts
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Nanotechnologies Inc
Original Assignee
Molecular Imprints Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/210,894 external-priority patent/US7070405B2/en
Priority claimed from US10/210,780 external-priority patent/US6916584B2/en
Priority claimed from US10/210,785 external-priority patent/US7027156B2/en
Application filed by Molecular Imprints Inc filed Critical Molecular Imprints Inc
Publication of AU2003261317A8 publication Critical patent/AU2003261317A8/en
Publication of AU2003261317A1 publication Critical patent/AU2003261317A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
AU2003261317A 2002-08-01 2003-07-31 Scatterometry alignment for imprint lithography Abandoned AU2003261317A1 (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US10/210,894 US7070405B2 (en) 2002-08-01 2002-08-01 Alignment systems for imprint lithography
US10/210,780 US6916584B2 (en) 2002-08-01 2002-08-01 Alignment methods for imprint lithography
US10/210,785 2002-08-01
US10/210,894 2002-08-01
US10/210,785 US7027156B2 (en) 2002-08-01 2002-08-01 Scatterometry alignment for imprint lithography
US10/210,780 2002-08-01
PCT/US2003/023948 WO2004013693A2 (en) 2002-08-01 2003-07-31 Scatterometry alignment for imprint lithography

Publications (2)

Publication Number Publication Date
AU2003261317A8 AU2003261317A8 (en) 2004-02-23
AU2003261317A1 true AU2003261317A1 (en) 2004-02-23

Family

ID=31499238

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003261317A Abandoned AU2003261317A1 (en) 2002-08-01 2003-07-31 Scatterometry alignment for imprint lithography

Country Status (6)

Country Link
EP (1) EP1573395A4 (en)
JP (2) JP2006516065A (en)
KR (1) KR20050026088A (en)
AU (1) AU2003261317A1 (en)
TW (1) TWI266970B (en)
WO (1) WO2004013693A2 (en)

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US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US6954275B2 (en) 2000-08-01 2005-10-11 Boards Of Regents, The University Of Texas System Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
US6964793B2 (en) 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
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Also Published As

Publication number Publication date
JP2011101016A (en) 2011-05-19
WO2004013693A2 (en) 2004-02-12
EP1573395A2 (en) 2005-09-14
TWI266970B (en) 2006-11-21
JP2006516065A (en) 2006-06-15
KR20050026088A (en) 2005-03-14
AU2003261317A8 (en) 2004-02-23
TW200406651A (en) 2004-05-01
JP5421221B2 (en) 2014-02-19
WO2004013693A3 (en) 2006-01-19
EP1573395A4 (en) 2010-09-29

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