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AU2002337368A1 - Improvements in and relating to optoelectronic devices - Google Patents

Improvements in and relating to optoelectronic devices

Info

Publication number
AU2002337368A1
AU2002337368A1 AU2002337368A AU2002337368A AU2002337368A1 AU 2002337368 A1 AU2002337368 A1 AU 2002337368A1 AU 2002337368 A AU2002337368 A AU 2002337368A AU 2002337368 A AU2002337368 A AU 2002337368A AU 2002337368 A1 AU2002337368 A1 AU 2002337368A1
Authority
AU
Australia
Prior art keywords
relating
optoelectronic devices
optoelectronic
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002337368A
Inventor
Ann Catrina Bryce
Yvon Heymes
John Haig Marsh
Bocang Qui
Elchuri Rao
Bertrand Theys
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Orange SA
University of Glasgow
Original Assignee
Centre National de la Recherche Scientifique CNRS
France Telecom SA
University of Glasgow
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, France Telecom SA, University of Glasgow filed Critical Centre National de la Recherche Scientifique CNRS
Publication of AU2002337368A1 publication Critical patent/AU2002337368A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/13Integrated optical circuits characterised by the manufacturing method
    • G02B6/136Integrated optical circuits characterised by the manufacturing method by etching
    • H10P14/3824
    • H10P95/408
    • H10P95/904
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083Constructional arrangements
    • G02B2006/12097Ridge, rib or the like
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B2006/12083Constructional arrangements
    • G02B2006/12128Multiple Quantum Well [MQW]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/30Structure or shape of the active region; Materials used for the active region
    • H01S5/34Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H01S5/3414Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
AU2002337368A 2001-10-31 2002-10-31 Improvements in and relating to optoelectronic devices Abandoned AU2002337368A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB0126083.5A GB0126083D0 (en) 2001-10-31 2001-10-31 Improvements in and relating to optoelectronic devices
GB0126083.5 2001-10-31
PCT/GB2002/004993 WO2003038487A2 (en) 2001-10-31 2002-10-31 Improvements in and relating to optoelectronic devices

Publications (1)

Publication Number Publication Date
AU2002337368A1 true AU2002337368A1 (en) 2003-05-12

Family

ID=9924834

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002337368A Abandoned AU2002337368A1 (en) 2001-10-31 2002-10-31 Improvements in and relating to optoelectronic devices

Country Status (3)

Country Link
AU (1) AU2002337368A1 (en)
GB (2) GB0126083D0 (en)
WO (1) WO2003038487A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2405950B (en) * 2003-09-11 2007-05-09 Agilent Technologies Inc Integrated optical device
US7723139B2 (en) 2007-10-01 2010-05-25 Corning Incorporated Quantum well intermixing
CN105390936B (en) * 2015-11-26 2018-06-15 深圳瑞波光电子有限公司 A kind of epitaxial structure and its manufacturing method
EP3745471A1 (en) * 2019-05-31 2020-12-02 OSRAM Opto Semiconductors GmbH Method of laser treatment of a semiconductor wafer comprising algainp-leds to increase their light generating efficiency

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5546418A (en) * 1993-07-28 1996-08-13 Matsushita Electric Industrial Co., Ltd. Semiconductor laser having a flat groove for selected crystal planes

Also Published As

Publication number Publication date
GB0225367D0 (en) 2002-12-11
WO2003038487A2 (en) 2003-05-08
GB2385712A (en) 2003-08-27
WO2003038487A3 (en) 2003-09-04
GB0126083D0 (en) 2001-12-19

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase